KR20250044879A - 플라즈마 처리 장치 및 전원 시스템 - Google Patents

플라즈마 처리 장치 및 전원 시스템 Download PDF

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Publication number
KR20250044879A
KR20250044879A KR1020257005155A KR20257005155A KR20250044879A KR 20250044879 A KR20250044879 A KR 20250044879A KR 1020257005155 A KR1020257005155 A KR 1020257005155A KR 20257005155 A KR20257005155 A KR 20257005155A KR 20250044879 A KR20250044879 A KR 20250044879A
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KR
South Korea
Prior art keywords
state
signal
voltage level
repetition period
period
Prior art date
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Pending
Application number
KR1020257005155A
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English (en)
Korean (ko)
Inventor
고타 시홈마츠
리푸 리
히로시 츠지모토
다이치 미즈카미
준 아베
히데오 가토
Original Assignee
도쿄엘렉트론가부시키가이샤
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Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20250044879A publication Critical patent/KR20250044879A/ko
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32128—Radio frequency generated discharge using particular waveforms, e.g. polarised waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020257005155A 2022-07-28 2023-07-19 플라즈마 처리 장치 및 전원 시스템 Pending KR20250044879A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2022-120800 2022-07-28
JP2022120800 2022-07-28
PCT/JP2023/026442 WO2024024594A1 (ja) 2022-07-28 2023-07-19 プラズマ処理装置及び電源システム

Publications (1)

Publication Number Publication Date
KR20250044879A true KR20250044879A (ko) 2025-04-01

Family

ID=89706292

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257005155A Pending KR20250044879A (ko) 2022-07-28 2023-07-19 플라즈마 처리 장치 및 전원 시스템

Country Status (6)

Country Link
US (1) US20250174434A1 (https=)
JP (1) JPWO2024024594A1 (https=)
KR (1) KR20250044879A (https=)
CN (1) CN119585855A (https=)
TW (1) TW202422629A (https=)
WO (1) WO2024024594A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025203685A1 (ja) * 2024-03-29 2025-10-02 株式会社ダイヘン 高周波電力供給システム
WO2025203684A1 (ja) * 2024-03-29 2025-10-02 株式会社ダイヘン 高周波電源装置
WO2026034233A1 (ja) * 2024-08-08 2026-02-12 東京エレクトロン株式会社 プラズマ処理装置及び電源システム

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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US8070972B2 (en) * 2006-03-30 2011-12-06 Tokyo Electron Limited Etching method and etching apparatus
JP6027490B2 (ja) * 2013-05-13 2016-11-16 東京エレクトロン株式会社 ガスを供給する方法、及びプラズマ処理装置
JP6030994B2 (ja) * 2013-05-15 2016-11-24 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマエッチング方法
JP6158111B2 (ja) * 2014-02-12 2017-07-05 東京エレクトロン株式会社 ガス供給方法及び半導体製造装置
JP6284786B2 (ja) * 2014-02-27 2018-02-28 東京エレクトロン株式会社 プラズマ処理装置のクリーニング方法
JP6541596B2 (ja) * 2016-03-22 2019-07-10 東京エレクトロン株式会社 プラズマ処理方法
JP6670791B2 (ja) * 2017-03-30 2020-03-25 東京エレクトロン株式会社 流量制御器を検査する方法及び被処理体を処理する方法
JP2019129123A (ja) * 2018-01-26 2019-08-01 東京エレクトロン株式会社 直流電圧を印加する方法及びプラズマ処理装置
JP7250449B2 (ja) * 2018-07-04 2023-04-03 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
CN112534544B (zh) * 2018-08-30 2025-02-11 东京毅力科创株式会社 控制等离子体加工的系统和方法
US11605527B2 (en) * 2020-01-20 2023-03-14 COMET Technologies USA, Inc. Pulsing control match network
JP7442365B2 (ja) * 2020-03-27 2024-03-04 東京エレクトロン株式会社 基板処理装置、基板処理システム、基板処理装置の制御方法および基板処理システムの制御方法
JP7433271B2 (ja) * 2020-04-27 2024-02-19 東京エレクトロン株式会社 基板処理装置および基板処理装置の制御方法
JP7575353B2 (ja) * 2020-08-31 2024-10-29 東京エレクトロン株式会社 プラズマ処理装置
JP7504004B2 (ja) * 2020-11-13 2024-06-21 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP7560215B2 (ja) * 2021-03-17 2024-10-02 東京エレクトロン株式会社 プラズマ処理装置
JP7544450B2 (ja) * 2021-03-17 2024-09-03 東京エレクトロン株式会社 プラズマ処理装置
JP7648307B2 (ja) * 2021-06-22 2025-03-18 東京エレクトロン株式会社 シャワーヘッド及びプラズマ処理装置
JP7761537B2 (ja) * 2022-07-20 2025-10-28 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
WO2024038774A1 (ja) * 2022-08-16 2024-02-22 東京エレクトロン株式会社 プラズマ処理装置及び静電チャック
WO2024043065A1 (ja) * 2022-08-22 2024-02-29 東京エレクトロン株式会社 プラズマ処理装置、ｒｆシステム、およびｒｆ制御方法
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Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
JP2013535074A (ja) 2010-06-11 2013-09-09 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド 基板プラズマ処理技術

Also Published As

Publication number Publication date
TW202422629A (zh) 2024-06-01
US20250174434A1 (en) 2025-05-29
JPWO2024024594A1 (https=) 2024-02-01
CN119585855A (zh) 2025-03-07
WO2024024594A1 (ja) 2024-02-01

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Date Code Title Description
PA0105 International application

Patent event date: 20250217

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application