CN119208328B - 半导体装置 - Google Patents

半导体装置

Info

Publication number
CN119208328B
CN119208328B CN202411290829.XA CN202411290829A CN119208328B CN 119208328 B CN119208328 B CN 119208328B CN 202411290829 A CN202411290829 A CN 202411290829A CN 119208328 B CN119208328 B CN 119208328B
Authority
CN
China
Prior art keywords
region
gate
view
plan
mos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202411290829.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN119208328A (zh
Inventor
林雅弘
井上翼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuvoton Technology Corp Japan
Original Assignee
Nuvoton Technology Corp Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuvoton Technology Corp Japan filed Critical Nuvoton Technology Corp Japan
Priority claimed from PCT/JP2023/016405 external-priority patent/WO2024018715A1/ja
Publication of CN119208328A publication Critical patent/CN119208328A/zh
Application granted granted Critical
Publication of CN119208328B publication Critical patent/CN119208328B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN202411290829.XA 2022-07-22 2023-04-26 半导体装置 Active CN119208328B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202263391463P 2022-07-22 2022-07-22
US63/391,463 2022-07-22
PCT/JP2023/016405 WO2024018715A1 (ja) 2022-07-22 2023-04-26 半導体装置
CN202380011458.4A CN117413361B (zh) 2022-07-22 2023-04-26 半导体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN202380011458.4A Division CN117413361B (zh) 2022-07-22 2023-04-26 半导体装置

Publications (2)

Publication Number Publication Date
CN119208328A CN119208328A (zh) 2024-12-27
CN119208328B true CN119208328B (zh) 2025-08-29

Family

ID=89491233

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202411290829.XA Active CN119208328B (zh) 2022-07-22 2023-04-26 半导体装置
CN202380011458.4A Active CN117413361B (zh) 2022-07-22 2023-04-26 半导体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202380011458.4A Active CN117413361B (zh) 2022-07-22 2023-04-26 半导体装置

Country Status (2)

Country Link
JP (2) JP7442750B1 (https=)
CN (2) CN119208328B (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113314527A (zh) * 2018-12-19 2021-08-27 新唐科技日本株式会社 半导体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005011986A (ja) * 2003-06-19 2005-01-13 Sanyo Electric Co Ltd 半導体装置
JP3917144B2 (ja) * 2004-04-09 2007-05-23 株式会社東芝 半導体装置
JP2007129250A (ja) * 2006-12-20 2007-05-24 Fujitsu Ltd 半導体装置
US7960788B2 (en) * 2007-01-25 2011-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Replacing symmetric transistors with asymmetric transistors
US20110233605A1 (en) * 2010-03-26 2011-09-29 Force Mos Technology Co. Ltd. Semiconductor power device layout for stress reduction
JP7131003B2 (ja) * 2018-03-16 2022-09-06 富士電機株式会社 半導体装置
JP7539269B2 (ja) * 2020-07-31 2024-08-23 ローム株式会社 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113314527A (zh) * 2018-12-19 2021-08-27 新唐科技日本株式会社 半导体装置

Also Published As

Publication number Publication date
CN117413361B (zh) 2024-08-27
JP7503220B2 (ja) 2024-06-19
JPWO2024018715A1 (https=) 2024-01-25
CN119208328A (zh) 2024-12-27
JP2024046689A (ja) 2024-04-03
JP7442750B1 (ja) 2024-03-04
CN117413361A (zh) 2024-01-16

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