JP7442750B1 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP7442750B1
JP7442750B1 JP2023563899A JP2023563899A JP7442750B1 JP 7442750 B1 JP7442750 B1 JP 7442750B1 JP 2023563899 A JP2023563899 A JP 2023563899A JP 2023563899 A JP2023563899 A JP 2023563899A JP 7442750 B1 JP7442750 B1 JP 7442750B1
Authority
JP
Japan
Prior art keywords
region
gate
semiconductor layer
mos transistor
view
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023563899A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024018715A1 (https=
JPWO2024018715A5 (https=
Inventor
雅弘 林
翼 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuvoton Technology Corp Japan
Original Assignee
Nuvoton Technology Corp Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuvoton Technology Corp Japan filed Critical Nuvoton Technology Corp Japan
Priority claimed from PCT/JP2023/016405 external-priority patent/WO2024018715A1/ja
Publication of JPWO2024018715A1 publication Critical patent/JPWO2024018715A1/ja
Priority to JP2024023534A priority Critical patent/JP7503220B2/ja
Application granted granted Critical
Publication of JP7442750B1 publication Critical patent/JP7442750B1/ja
Publication of JPWO2024018715A5 publication Critical patent/JPWO2024018715A5/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2023563899A 2022-07-22 2023-04-26 半導体装置 Active JP7442750B1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024023534A JP7503220B2 (ja) 2022-07-22 2024-02-20 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202263391463P 2022-07-22 2022-07-22
US63/391,463 2022-07-22
PCT/JP2023/016405 WO2024018715A1 (ja) 2022-07-22 2023-04-26 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024023534A Division JP7503220B2 (ja) 2022-07-22 2024-02-20 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2024018715A1 JPWO2024018715A1 (https=) 2024-01-25
JP7442750B1 true JP7442750B1 (ja) 2024-03-04
JPWO2024018715A5 JPWO2024018715A5 (https=) 2024-06-25

Family

ID=89491233

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2023563899A Active JP7442750B1 (ja) 2022-07-22 2023-04-26 半導体装置
JP2024023534A Active JP7503220B2 (ja) 2022-07-22 2024-02-20 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024023534A Active JP7503220B2 (ja) 2022-07-22 2024-02-20 半導体装置

Country Status (2)

Country Link
JP (2) JP7442750B1 (https=)
CN (2) CN119208328B (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005011986A (ja) * 2003-06-19 2005-01-13 Sanyo Electric Co Ltd 半導体装置
JP2005302952A (ja) * 2004-04-09 2005-10-27 Toshiba Corp 半導体装置
US20110233605A1 (en) * 2010-03-26 2011-09-29 Force Mos Technology Co. Ltd. Semiconductor power device layout for stress reduction
JP2019161168A (ja) * 2018-03-16 2019-09-19 富士電機株式会社 半導体装置
JP2022026643A (ja) * 2020-07-31 2022-02-10 ローム株式会社 半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007129250A (ja) * 2006-12-20 2007-05-24 Fujitsu Ltd 半導体装置
US7960788B2 (en) * 2007-01-25 2011-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Replacing symmetric transistors with asymmetric transistors
TWI761740B (zh) * 2018-12-19 2022-04-21 日商新唐科技日本股份有限公司 半導體裝置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005011986A (ja) * 2003-06-19 2005-01-13 Sanyo Electric Co Ltd 半導体装置
JP2005302952A (ja) * 2004-04-09 2005-10-27 Toshiba Corp 半導体装置
US20110233605A1 (en) * 2010-03-26 2011-09-29 Force Mos Technology Co. Ltd. Semiconductor power device layout for stress reduction
JP2019161168A (ja) * 2018-03-16 2019-09-19 富士電機株式会社 半導体装置
JP2022026643A (ja) * 2020-07-31 2022-02-10 ローム株式会社 半導体装置

Also Published As

Publication number Publication date
CN117413361B (zh) 2024-08-27
JP7503220B2 (ja) 2024-06-19
JPWO2024018715A1 (https=) 2024-01-25
CN119208328A (zh) 2024-12-27
JP2024046689A (ja) 2024-04-03
CN119208328B (zh) 2025-08-29
CN117413361A (zh) 2024-01-16

Similar Documents

Publication Publication Date Title
US11908868B2 (en) Semiconductor device
US10566448B2 (en) Insulated gate bipolar transistor
JP6941502B2 (ja) 半導体装置および半導体パッケージ
US12199057B2 (en) Semiconductor device
JP7442750B1 (ja) 半導体装置
WO2024018715A1 (ja) 半導体装置
CN223943088U (zh) 半导体装置
JP7599061B1 (ja) 半導体装置
TWI856843B (zh) 半導體裝置
US12426337B1 (en) Semiconductor device
WO2025046975A1 (ja) 半導体装置
JP2025132913A (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20231017

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20231017

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20231017

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240130

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240220

R150 Certificate of patent or registration of utility model

Ref document number: 7442750

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150