JPWO2024018715A1 - - Google Patents
Info
- Publication number
- JPWO2024018715A1 JPWO2024018715A1 JP2023563899A JP2023563899A JPWO2024018715A1 JP WO2024018715 A1 JPWO2024018715 A1 JP WO2024018715A1 JP 2023563899 A JP2023563899 A JP 2023563899A JP 2023563899 A JP2023563899 A JP 2023563899A JP WO2024018715 A1 JPWO2024018715 A1 JP WO2024018715A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6728—Vertical TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/512—Disposition of the gate electrodes, e.g. buried gates
- H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
- H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024023534A JP7503220B2 (ja) | 2022-07-22 | 2024-02-20 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202263391463P | 2022-07-22 | 2022-07-22 | |
| US63/391,463 | 2022-07-22 | ||
| PCT/JP2023/016405 WO2024018715A1 (ja) | 2022-07-22 | 2023-04-26 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024023534A Division JP7503220B2 (ja) | 2022-07-22 | 2024-02-20 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2024018715A1 true JPWO2024018715A1 (https=) | 2024-01-25 |
| JP7442750B1 JP7442750B1 (ja) | 2024-03-04 |
| JPWO2024018715A5 JPWO2024018715A5 (https=) | 2024-06-25 |
Family
ID=89491233
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023563899A Active JP7442750B1 (ja) | 2022-07-22 | 2023-04-26 | 半導体装置 |
| JP2024023534A Active JP7503220B2 (ja) | 2022-07-22 | 2024-02-20 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024023534A Active JP7503220B2 (ja) | 2022-07-22 | 2024-02-20 | 半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (2) | JP7442750B1 (https=) |
| CN (2) | CN119208328B (https=) |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005011986A (ja) * | 2003-06-19 | 2005-01-13 | Sanyo Electric Co Ltd | 半導体装置 |
| JP3917144B2 (ja) * | 2004-04-09 | 2007-05-23 | 株式会社東芝 | 半導体装置 |
| JP2007129250A (ja) * | 2006-12-20 | 2007-05-24 | Fujitsu Ltd | 半導体装置 |
| US7960788B2 (en) * | 2007-01-25 | 2011-06-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Replacing symmetric transistors with asymmetric transistors |
| US20110233605A1 (en) * | 2010-03-26 | 2011-09-29 | Force Mos Technology Co. Ltd. | Semiconductor power device layout for stress reduction |
| JP7131003B2 (ja) * | 2018-03-16 | 2022-09-06 | 富士電機株式会社 | 半導体装置 |
| TWI761740B (zh) * | 2018-12-19 | 2022-04-21 | 日商新唐科技日本股份有限公司 | 半導體裝置 |
| JP7539269B2 (ja) * | 2020-07-31 | 2024-08-23 | ローム株式会社 | 半導体装置 |
-
2023
- 2023-04-26 CN CN202411290829.XA patent/CN119208328B/zh active Active
- 2023-04-26 CN CN202380011458.4A patent/CN117413361B/zh active Active
- 2023-04-26 JP JP2023563899A patent/JP7442750B1/ja active Active
-
2024
- 2024-02-20 JP JP2024023534A patent/JP7503220B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN117413361B (zh) | 2024-08-27 |
| JP7503220B2 (ja) | 2024-06-19 |
| CN119208328A (zh) | 2024-12-27 |
| JP2024046689A (ja) | 2024-04-03 |
| CN119208328B (zh) | 2025-08-29 |
| JP7442750B1 (ja) | 2024-03-04 |
| CN117413361A (zh) | 2024-01-16 |
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