CN119137715A - 含碳原子膜的干式蚀刻方法 - Google Patents

含碳原子膜的干式蚀刻方法 Download PDF

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Publication number
CN119137715A
CN119137715A CN202380037841.7A CN202380037841A CN119137715A CN 119137715 A CN119137715 A CN 119137715A CN 202380037841 A CN202380037841 A CN 202380037841A CN 119137715 A CN119137715 A CN 119137715A
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CN
China
Prior art keywords
carbon atom
containing film
etching
mask
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380037841.7A
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English (en)
Chinese (zh)
Inventor
堀胜
石川健治
阮氏翠儿
青木优太
津野修司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Seika Chemicals Co Ltd
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Sumitomo Seika Chemicals Co Ltd
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Publication date
Application filed by Sumitomo Seika Chemicals Co Ltd filed Critical Sumitomo Seika Chemicals Co Ltd
Publication of CN119137715A publication Critical patent/CN119137715A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

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  • Drying Of Semiconductors (AREA)
CN202380037841.7A 2022-07-22 2023-07-20 含碳原子膜的干式蚀刻方法 Pending CN119137715A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022117495 2022-07-22
JP2022-117495 2022-07-22
PCT/JP2023/026645 WO2024019123A1 (ja) 2022-07-22 2023-07-20 炭素原子含有膜のドライエッチング方法

Publications (1)

Publication Number Publication Date
CN119137715A true CN119137715A (zh) 2024-12-13

Family

ID=89617904

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380037841.7A Pending CN119137715A (zh) 2022-07-22 2023-07-20 含碳原子膜的干式蚀刻方法

Country Status (4)

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JP (1) JPWO2024019123A1 (https=)
CN (1) CN119137715A (https=)
TW (1) TW202414578A (https=)
WO (1) WO2024019123A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7115525B2 (en) * 2004-09-02 2006-10-03 Micron Technology, Inc. Method for integrated circuit fabrication using pitch multiplication
JP5642001B2 (ja) * 2011-03-25 2014-12-17 東京エレクトロン株式会社 プラズマエッチング方法
US9824896B2 (en) * 2015-11-04 2017-11-21 Lam Research Corporation Methods and systems for advanced ion control for etching processes
JP2018200925A (ja) * 2017-05-25 2018-12-20 東京エレクトロン株式会社 エッチング方法およびエッチング装置
US11195723B1 (en) * 2020-12-11 2021-12-07 Tokyo Electron Limited Non-atomic layer deposition (ALD) method of forming sidewall passivation layer during high aspect ratio carbon layer etch

Also Published As

Publication number Publication date
JPWO2024019123A1 (https=) 2024-01-25
TW202414578A (zh) 2024-04-01
WO2024019123A1 (ja) 2024-01-25

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