JPWO2024019123A1 - - Google Patents
Info
- Publication number
- JPWO2024019123A1 JPWO2024019123A1 JP2024535136A JP2024535136A JPWO2024019123A1 JP WO2024019123 A1 JPWO2024019123 A1 JP WO2024019123A1 JP 2024535136 A JP2024535136 A JP 2024535136A JP 2024535136 A JP2024535136 A JP 2024535136A JP WO2024019123 A1 JPWO2024019123 A1 JP WO2024019123A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022117495 | 2022-07-22 | ||
| PCT/JP2023/026645 WO2024019123A1 (ja) | 2022-07-22 | 2023-07-20 | 炭素原子含有膜のドライエッチング方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2024019123A1 true JPWO2024019123A1 (https=) | 2024-01-25 |
Family
ID=89617904
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024535136A Pending JPWO2024019123A1 (https=) | 2022-07-22 | 2023-07-20 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPWO2024019123A1 (https=) |
| CN (1) | CN119137715A (https=) |
| TW (1) | TW202414578A (https=) |
| WO (1) | WO2024019123A1 (https=) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7115525B2 (en) * | 2004-09-02 | 2006-10-03 | Micron Technology, Inc. | Method for integrated circuit fabrication using pitch multiplication |
| JP5642001B2 (ja) * | 2011-03-25 | 2014-12-17 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
| US9824896B2 (en) * | 2015-11-04 | 2017-11-21 | Lam Research Corporation | Methods and systems for advanced ion control for etching processes |
| JP2018200925A (ja) * | 2017-05-25 | 2018-12-20 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
| US11195723B1 (en) * | 2020-12-11 | 2021-12-07 | Tokyo Electron Limited | Non-atomic layer deposition (ALD) method of forming sidewall passivation layer during high aspect ratio carbon layer etch |
-
2023
- 2023-07-20 JP JP2024535136A patent/JPWO2024019123A1/ja active Pending
- 2023-07-20 TW TW112127217A patent/TW202414578A/zh unknown
- 2023-07-20 WO PCT/JP2023/026645 patent/WO2024019123A1/ja not_active Ceased
- 2023-07-20 CN CN202380037841.7A patent/CN119137715A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN119137715A (zh) | 2024-12-13 |
| TW202414578A (zh) | 2024-04-01 |
| WO2024019123A1 (ja) | 2024-01-25 |