CN118974940A - 半导体装置 - Google Patents

半导体装置 Download PDF

Info

Publication number
CN118974940A
CN118974940A CN202280094655.2A CN202280094655A CN118974940A CN 118974940 A CN118974940 A CN 118974940A CN 202280094655 A CN202280094655 A CN 202280094655A CN 118974940 A CN118974940 A CN 118974940A
Authority
CN
China
Prior art keywords
switch element
switching element
gate terminal
voltage
sensing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280094655.2A
Other languages
English (en)
Chinese (zh)
Inventor
井芹果奈
阿多保夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN118974940A publication Critical patent/CN118974940A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/18—Modifications for indicating state of switch
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H03K17/122—Modifications for increasing the maximum permissible switched current in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0027—Measuring means of, e.g. currents through or voltages across the switch
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

Landscapes

  • Power Conversion In General (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN202280094655.2A 2022-04-14 2022-04-14 半导体装置 Pending CN118974940A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/017811 WO2023199472A1 (ja) 2022-04-14 2022-04-14 半導体装置

Publications (1)

Publication Number Publication Date
CN118974940A true CN118974940A (zh) 2024-11-15

Family

ID=88329393

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280094655.2A Pending CN118974940A (zh) 2022-04-14 2022-04-14 半导体装置

Country Status (5)

Country Link
US (1) US20250158383A1 (https=)
JP (1) JP7720993B2 (https=)
CN (1) CN118974940A (https=)
DE (1) DE112022007061T5 (https=)
WO (1) WO2023199472A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240072639A1 (en) * 2022-08-25 2024-02-29 Lear Corporation Junction Box Having Parallel Switch Failure Detection

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5289580B2 (ja) * 2009-10-20 2013-09-11 三菱電機株式会社 半導体装置
JP5361788B2 (ja) * 2010-04-20 2013-12-04 三菱電機株式会社 パワーモジュール
DE112011102926B4 (de) * 2010-09-03 2018-10-11 Mitsubishi Electric Corp. Halbleiterbauteil
JPWO2014097739A1 (ja) * 2012-12-17 2017-01-12 富士電機株式会社 半導体装置
JP2015122442A (ja) * 2013-12-24 2015-07-02 本田技研工業株式会社 半導体装置
JP6439460B2 (ja) * 2015-01-23 2018-12-19 株式会社デンソー 駆動装置
WO2017199949A1 (ja) * 2016-05-20 2017-11-23 株式会社デンソー スイッチング素子の駆動制御装置
JP6673186B2 (ja) * 2016-12-26 2020-03-25 株式会社デンソー 電力変換器制御装置
JP6451890B1 (ja) * 2018-07-25 2019-01-16 富士電機株式会社 駆動装置およびスイッチング装置
EP3736864B1 (en) * 2019-05-06 2023-04-19 Infineon Technologies Austria AG Semiconductor device
US20230139229A1 (en) * 2020-05-29 2023-05-04 Mitsubishi Electric Corporation Semiconductor device and power converter
US20240421689A1 (en) * 2023-06-14 2024-12-19 Amber Semiconductor, Inc. Ac-to-dc power conversion with ground reference to common node of solid-state ac switch

Also Published As

Publication number Publication date
WO2023199472A1 (ja) 2023-10-19
JP7720993B2 (ja) 2025-08-08
US20250158383A1 (en) 2025-05-15
JPWO2023199472A1 (https=) 2023-10-19
DE112022007061T5 (de) 2025-01-23

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