JPWO2023199472A1 - - Google Patents
Info
- Publication number
- JPWO2023199472A1 JPWO2023199472A1 JP2024515270A JP2024515270A JPWO2023199472A1 JP WO2023199472 A1 JPWO2023199472 A1 JP WO2023199472A1 JP 2024515270 A JP2024515270 A JP 2024515270A JP 2024515270 A JP2024515270 A JP 2024515270A JP WO2023199472 A1 JPWO2023199472 A1 JP WO2023199472A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/18—Modifications for indicating state of switch
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/12—Modifications for increasing the maximum permissible switched current
- H03K17/122—Modifications for increasing the maximum permissible switched current in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0027—Measuring means of, e.g. currents through or voltages across the switch
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2022/017811 WO2023199472A1 (ja) | 2022-04-14 | 2022-04-14 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2023199472A1 true JPWO2023199472A1 (https=) | 2023-10-19 |
| JPWO2023199472A5 JPWO2023199472A5 (https=) | 2024-07-01 |
| JP7720993B2 JP7720993B2 (ja) | 2025-08-08 |
Family
ID=88329393
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024515270A Active JP7720993B2 (ja) | 2022-04-14 | 2022-04-14 | 半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250158383A1 (https=) |
| JP (1) | JP7720993B2 (https=) |
| CN (1) | CN118974940A (https=) |
| DE (1) | DE112022007061T5 (https=) |
| WO (1) | WO2023199472A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20240072639A1 (en) * | 2022-08-25 | 2024-02-29 | Lear Corporation | Junction Box Having Parallel Switch Failure Detection |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011048845A1 (ja) * | 2009-10-20 | 2011-04-28 | 三菱電機株式会社 | 半導体装置 |
| WO2014097739A1 (ja) * | 2012-12-17 | 2014-06-26 | 富士電機株式会社 | 半導体装置およびその半導体装置を用いた電流検出回路 |
| JP2019062737A (ja) * | 2015-01-23 | 2019-04-18 | 株式会社デンソー | 駆動装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5361788B2 (ja) * | 2010-04-20 | 2013-12-04 | 三菱電機株式会社 | パワーモジュール |
| DE112011102926B4 (de) * | 2010-09-03 | 2018-10-11 | Mitsubishi Electric Corp. | Halbleiterbauteil |
| JP2015122442A (ja) * | 2013-12-24 | 2015-07-02 | 本田技研工業株式会社 | 半導体装置 |
| WO2017199949A1 (ja) * | 2016-05-20 | 2017-11-23 | 株式会社デンソー | スイッチング素子の駆動制御装置 |
| JP6673186B2 (ja) * | 2016-12-26 | 2020-03-25 | 株式会社デンソー | 電力変換器制御装置 |
| JP6451890B1 (ja) * | 2018-07-25 | 2019-01-16 | 富士電機株式会社 | 駆動装置およびスイッチング装置 |
| EP3736864B1 (en) * | 2019-05-06 | 2023-04-19 | Infineon Technologies Austria AG | Semiconductor device |
| US20230139229A1 (en) * | 2020-05-29 | 2023-05-04 | Mitsubishi Electric Corporation | Semiconductor device and power converter |
| US20240421689A1 (en) * | 2023-06-14 | 2024-12-19 | Amber Semiconductor, Inc. | Ac-to-dc power conversion with ground reference to common node of solid-state ac switch |
-
2022
- 2022-04-14 CN CN202280094655.2A patent/CN118974940A/zh active Pending
- 2022-04-14 WO PCT/JP2022/017811 patent/WO2023199472A1/ja not_active Ceased
- 2022-04-14 JP JP2024515270A patent/JP7720993B2/ja active Active
- 2022-04-14 US US18/838,892 patent/US20250158383A1/en active Pending
- 2022-04-14 DE DE112022007061.7T patent/DE112022007061T5/de active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011048845A1 (ja) * | 2009-10-20 | 2011-04-28 | 三菱電機株式会社 | 半導体装置 |
| WO2014097739A1 (ja) * | 2012-12-17 | 2014-06-26 | 富士電機株式会社 | 半導体装置およびその半導体装置を用いた電流検出回路 |
| JP2019062737A (ja) * | 2015-01-23 | 2019-04-18 | 株式会社デンソー | 駆動装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023199472A1 (ja) | 2023-10-19 |
| CN118974940A (zh) | 2024-11-15 |
| JP7720993B2 (ja) | 2025-08-08 |
| US20250158383A1 (en) | 2025-05-15 |
| DE112022007061T5 (de) | 2025-01-23 |
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