CN118077128A - 电力用半导体元件的驱动电路、电力用半导体模块以及电力变换装置 - Google Patents

电力用半导体元件的驱动电路、电力用半导体模块以及电力变换装置 Download PDF

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Publication number
CN118077128A
CN118077128A CN202180103108.1A CN202180103108A CN118077128A CN 118077128 A CN118077128 A CN 118077128A CN 202180103108 A CN202180103108 A CN 202180103108A CN 118077128 A CN118077128 A CN 118077128A
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CN
China
Prior art keywords
circuit
voltage
power semiconductor
signal
signal generator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180103108.1A
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English (en)
Chinese (zh)
Inventor
堀口刚司
益原贵志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN118077128A publication Critical patent/CN118077128A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
CN202180103108.1A 2021-10-13 2021-10-13 电力用半导体元件的驱动电路、电力用半导体模块以及电力变换装置 Pending CN118077128A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/037882 WO2023062745A1 (ja) 2021-10-13 2021-10-13 電力用半導体素子の駆動回路、電力用半導体モジュール、および電力変換装置

Publications (1)

Publication Number Publication Date
CN118077128A true CN118077128A (zh) 2024-05-24

Family

ID=85987338

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180103108.1A Pending CN118077128A (zh) 2021-10-13 2021-10-13 电力用半导体元件的驱动电路、电力用半导体模块以及电力变换装置

Country Status (5)

Country Link
US (1) US12407342B2 (https=)
JP (1) JP7595785B2 (https=)
CN (1) CN118077128A (https=)
DE (1) DE112021008351T5 (https=)
WO (1) WO2023062745A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102023203928A1 (de) 2023-04-27 2024-10-31 Vitesco Technologies Germany Gmbh Ansteuerung von Leistungstransistoren mit erhöhtem negativem Ansteuersignalpegel
CN118117857B (zh) * 2024-04-30 2024-08-09 华羿微电子股份有限公司 一种mos和igbt栅极米勒电容效应抑制电路及芯片

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5475329A (en) * 1994-01-04 1995-12-12 Texas Instruments Incorporated Turn-off circuit to provide a discharge path from a first node to a second node
JP3193827B2 (ja) * 1994-04-28 2001-07-30 三菱電機株式会社 半導体パワーモジュールおよび電力変換装置
US5550701A (en) * 1994-08-30 1996-08-27 International Rectifier Corporation Power MOSFET with overcurrent and over-temperature protection and control circuit decoupled from body diode
US6169439B1 (en) * 1997-01-02 2001-01-02 Texas Instruments Incorporated Current limited power MOSFET device with improved safe operating area
JP3568823B2 (ja) * 1999-05-24 2004-09-22 東芝三菱電機産業システム株式会社 絶縁ゲート型半導体素子のゲート制御回路
JP3752943B2 (ja) 2000-01-31 2006-03-08 株式会社日立製作所 半導体素子の駆動装置及びその制御方法
JP5927739B2 (ja) 2011-12-14 2016-06-01 富士電機株式会社 半導体装置
JP5516705B2 (ja) * 2012-11-26 2014-06-11 富士電機株式会社 半導体素子のゲート駆動方法
JP6362996B2 (ja) 2014-10-24 2018-07-25 株式会社日立製作所 半導体駆動装置ならびにそれを用いた電力変換装置
KR20160143909A (ko) * 2015-06-04 2016-12-15 엘에스산전 주식회사 Igbt 구동 장치
JP6613899B2 (ja) * 2016-01-05 2019-12-04 富士電機株式会社 半導体素子の駆動装置
JP6625215B2 (ja) 2016-07-04 2019-12-25 三菱電機株式会社 駆動回路およびそれを用いたパワーモジュール

Also Published As

Publication number Publication date
WO2023062745A1 (ja) 2023-04-20
US12407342B2 (en) 2025-09-02
DE112021008351T5 (de) 2024-07-25
US20250007507A1 (en) 2025-01-02
JPWO2023062745A1 (https=) 2023-04-20
JP7595785B2 (ja) 2024-12-06

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