JPWO2023062745A1 - - Google Patents

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Publication number
JPWO2023062745A1
JPWO2023062745A1 JP2023553818A JP2023553818A JPWO2023062745A1 JP WO2023062745 A1 JPWO2023062745 A1 JP WO2023062745A1 JP 2023553818 A JP2023553818 A JP 2023553818A JP 2023553818 A JP2023553818 A JP 2023553818A JP WO2023062745 A1 JPWO2023062745 A1 JP WO2023062745A1
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2023553818A
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Japanese (ja)
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JPWO2023062745A5 (https=
JP7595785B2 (ja
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Publication of JPWO2023062745A1 publication Critical patent/JPWO2023062745A1/ja
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Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
JP2023553818A 2021-10-13 2021-10-13 電力用半導体素子の駆動回路、電力用半導体モジュール、および電力変換装置 Active JP7595785B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/037882 WO2023062745A1 (ja) 2021-10-13 2021-10-13 電力用半導体素子の駆動回路、電力用半導体モジュール、および電力変換装置

Publications (3)

Publication Number Publication Date
JPWO2023062745A1 true JPWO2023062745A1 (https=) 2023-04-20
JPWO2023062745A5 JPWO2023062745A5 (https=) 2024-06-05
JP7595785B2 JP7595785B2 (ja) 2024-12-06

Family

ID=85987338

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023553818A Active JP7595785B2 (ja) 2021-10-13 2021-10-13 電力用半導体素子の駆動回路、電力用半導体モジュール、および電力変換装置

Country Status (5)

Country Link
US (1) US12407342B2 (https=)
JP (1) JP7595785B2 (https=)
CN (1) CN118077128A (https=)
DE (1) DE112021008351T5 (https=)
WO (1) WO2023062745A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102023203928A1 (de) 2023-04-27 2024-10-31 Vitesco Technologies Germany Gmbh Ansteuerung von Leistungstransistoren mit erhöhtem negativem Ansteuersignalpegel
CN118117857B (zh) * 2024-04-30 2024-08-09 华羿微电子股份有限公司 一种mos和igbt栅极米勒电容效应抑制电路及芯片

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000333441A (ja) * 1999-05-24 2000-11-30 Toshiba Corp 絶縁ゲート型半導体素子のゲート制御回路
JP2013078258A (ja) * 2012-11-26 2013-04-25 Fuji Electric Co Ltd 半導体素子のゲート駆動方法
JP2017005698A (ja) * 2015-06-04 2017-01-05 エルエス産電株式会社Lsis Co., Ltd. Igbt駆動装置
JP2017123709A (ja) * 2016-01-05 2017-07-13 富士電機株式会社 半導体素子の駆動装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5475329A (en) * 1994-01-04 1995-12-12 Texas Instruments Incorporated Turn-off circuit to provide a discharge path from a first node to a second node
JP3193827B2 (ja) * 1994-04-28 2001-07-30 三菱電機株式会社 半導体パワーモジュールおよび電力変換装置
US5550701A (en) * 1994-08-30 1996-08-27 International Rectifier Corporation Power MOSFET with overcurrent and over-temperature protection and control circuit decoupled from body diode
US6169439B1 (en) * 1997-01-02 2001-01-02 Texas Instruments Incorporated Current limited power MOSFET device with improved safe operating area
JP3752943B2 (ja) 2000-01-31 2006-03-08 株式会社日立製作所 半導体素子の駆動装置及びその制御方法
JP5927739B2 (ja) 2011-12-14 2016-06-01 富士電機株式会社 半導体装置
JP6362996B2 (ja) 2014-10-24 2018-07-25 株式会社日立製作所 半導体駆動装置ならびにそれを用いた電力変換装置
JP6625215B2 (ja) 2016-07-04 2019-12-25 三菱電機株式会社 駆動回路およびそれを用いたパワーモジュール

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000333441A (ja) * 1999-05-24 2000-11-30 Toshiba Corp 絶縁ゲート型半導体素子のゲート制御回路
JP2013078258A (ja) * 2012-11-26 2013-04-25 Fuji Electric Co Ltd 半導体素子のゲート駆動方法
JP2017005698A (ja) * 2015-06-04 2017-01-05 エルエス産電株式会社Lsis Co., Ltd. Igbt駆動装置
JP2017123709A (ja) * 2016-01-05 2017-07-13 富士電機株式会社 半導体素子の駆動装置

Also Published As

Publication number Publication date
CN118077128A (zh) 2024-05-24
WO2023062745A1 (ja) 2023-04-20
US12407342B2 (en) 2025-09-02
DE112021008351T5 (de) 2024-07-25
US20250007507A1 (en) 2025-01-02
JP7595785B2 (ja) 2024-12-06

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