CN117917209A - 用于图案化有机器件的三层光致抗蚀剂系统和方法 - Google Patents

用于图案化有机器件的三层光致抗蚀剂系统和方法 Download PDF

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Publication number
CN117917209A
CN117917209A CN202280047383.0A CN202280047383A CN117917209A CN 117917209 A CN117917209 A CN 117917209A CN 202280047383 A CN202280047383 A CN 202280047383A CN 117917209 A CN117917209 A CN 117917209A
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CN
China
Prior art keywords
layer
organic
etching
substrate
positive photoresist
Prior art date
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Pending
Application number
CN202280047383.0A
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English (en)
Chinese (zh)
Inventor
D·巴赫曼
Q·S·王
M·马迪
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Avalon Hologram Technology Co ltd
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Avalon Hologram Technology Co ltd
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Publication of CN117917209A publication Critical patent/CN117917209A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN202280047383.0A 2021-07-02 2022-06-30 用于图案化有机器件的三层光致抗蚀剂系统和方法 Pending CN117917209A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163217776P 2021-07-02 2021-07-02
US63/217,776 2021-07-02
PCT/CA2022/051053 WO2023272400A1 (en) 2021-07-02 2022-06-30 Trilayer photoresist system and method for patterning organic devices

Publications (1)

Publication Number Publication Date
CN117917209A true CN117917209A (zh) 2024-04-19

Family

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Family Applications (1)

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CN202280047383.0A Pending CN117917209A (zh) 2021-07-02 2022-06-30 用于图案化有机器件的三层光致抗蚀剂系统和方法

Country Status (6)

Country Link
US (1) US12310165B2 (enExample)
JP (1) JP7790752B2 (enExample)
KR (1) KR102962880B1 (enExample)
CN (1) CN117917209A (enExample)
CA (1) CA3222923A1 (enExample)
WO (1) WO2023272400A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026072534A1 (en) * 2024-09-24 2026-04-02 Nani Lithography Inc. Lithography mask methods and composition

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4732841A (en) 1986-03-24 1988-03-22 Fairchild Semiconductor Corporation Tri-level resist process for fine resolution photolithography
TW439118B (en) 2000-02-10 2001-06-07 Winbond Electronics Corp Multilayer thin photoresist process
US7435671B2 (en) 2006-08-18 2008-10-14 International Business Machines Corporation Trilayer resist scheme for gate etching applications
JP5477547B2 (ja) 2009-06-22 2014-04-23 ソニー株式会社 薄膜トランジスタの製造方法
US9899636B2 (en) 2014-08-01 2018-02-20 Orthogonal, Inc. Photolithographic patterning of organic electronic devices
JP6712188B2 (ja) 2015-07-13 2020-06-17 信越化学工業株式会社 レジスト下層膜形成用組成物及びこれを用いたパターン形成方法
US10243175B2 (en) 2016-02-02 2019-03-26 Samsung Display Co., Ltd. Organic light-emitting apparatus fabricated using a fluoropolymer and method of manufacturing the same
KR102490889B1 (ko) 2016-02-29 2023-01-25 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
KR102602193B1 (ko) 2016-08-12 2023-11-15 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
KR102775869B1 (ko) * 2017-01-03 2025-03-05 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
US10049876B1 (en) 2017-02-13 2018-08-14 International Business Machines Corporation Removal of trilayer resist without damage to underlying structure
KR102278608B1 (ko) * 2017-03-10 2021-07-19 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
CN107863451B (zh) 2017-10-30 2019-06-25 武汉华星光电技术有限公司 一种oled阳极的制备方法及oled显示装置的制备方法
KR102421575B1 (ko) 2017-12-01 2022-07-18 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
KR102614588B1 (ko) * 2018-08-20 2023-12-18 삼성디스플레이 주식회사 표시 장치의 제조 방법
US20200243791A1 (en) 2019-01-24 2020-07-30 Avalon Holographics Inc. Capping layer process with low temperature photoresist patterning

Also Published As

Publication number Publication date
US12310165B2 (en) 2025-05-20
US20230006165A1 (en) 2023-01-05
JP2024527246A (ja) 2024-07-24
KR20240027834A (ko) 2024-03-04
WO2023272400A1 (en) 2023-01-05
KR102962880B1 (ko) 2026-05-08
JP7790752B2 (ja) 2025-12-23
CA3222923A1 (en) 2023-01-05

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