CN1177754C - 固态材料 - Google Patents
固态材料 Download PDFInfo
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- CN1177754C CN1177754C CNB988143801A CN98814380A CN1177754C CN 1177754 C CN1177754 C CN 1177754C CN B988143801 A CNB988143801 A CN B988143801A CN 98814380 A CN98814380 A CN 98814380A CN 1177754 C CN1177754 C CN 1177754C
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- 239000000463 material Substances 0.000 title claims abstract description 112
- 210000003632 microfilament Anatomy 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 28
- 238000012545 processing Methods 0.000 claims abstract description 15
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 7
- 102000002151 Microfilament Proteins Human genes 0.000 claims description 40
- 108010040897 Microfilament Proteins Proteins 0.000 claims description 40
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000002070 nanowire Substances 0.000 claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910010293 ceramic material Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
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- 238000011160 research Methods 0.000 description 3
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 239000005864 Sulphur Substances 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
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- 229940007424 antimony trisulfide Drugs 0.000 description 1
- NVWBARWTDVQPJD-UHFFFAOYSA-N antimony(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[Sb+3].[Sb+3] NVWBARWTDVQPJD-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- RBFDCQDDCJFGIK-UHFFFAOYSA-N arsenic germanium Chemical compound [Ge].[As] RBFDCQDDCJFGIK-UHFFFAOYSA-N 0.000 description 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
- CSSYLTMKCUORDA-UHFFFAOYSA-N barium(2+);oxygen(2-) Chemical compound [O-2].[Ba+2] CSSYLTMKCUORDA-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
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- 229910000464 lead oxide Inorganic materials 0.000 description 1
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- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
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- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
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- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
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Abstract
一种处理固态材料的处理方法，其中：在材料的表面层中形成微孔，所述微孔有达200纳米的直径。用与坯件不同或相同的材料制造的微丝填充所述微孔。这产生了材料的数个特性的改进，包括强度和声损耗。本发明可以相当成功地用于压电陶瓷的制造。
Description
技术领域
本发明涉及固态材料的处理方法，所述固态材料包括钢、结构合金、半导体材料、介电质、铁氧体、压电陶瓷材料等等，旨在改进其特性。它还可以用于处理部件(物品)。
背景技术
旨在改进其特性的固体材料处理工艺公知的方向之一是在所述材料的表面提供某种添加剂以改进该材料的特定特性，尤其是其强度。
有一种公知的固体材料(苏联发明人证书No.1220104)，其接近于表面的层含有一种金的掺合物作为添加剂。
此种材料的问题是由于接近表面的区域中缺乏晶格的规则排列而强度不足。
有一种公知的固态材料(V.M.Paraschenko，M.M.Rakhmankulovand A.P Tsisin，“Technology of casting under pressure”.Moscow：Metallurgiya，1996，p.187)，其接近表面的层含有一种硼、碳、硫、铬或者铝的掺合物作为添加剂。
这种材料的问题也是由于接近表面的区域中缺乏晶格的规则排列。
有一种公知的压电陶瓷材料(苏联发明人证书No.1172906)，其基于氧化锆、氧化铅和氧化钡固溶物，接近表面的层含有高浓度的铅(占全部的0.5-0.8％)，这导致形成晶体附加的表面中心。
但是这种材料同样由于表面层中缺乏单晶粒晶格的规则排列而强度不足。
发明内容
本发明的目的之一是通过在其接近表面的层中三维地排列材料的初始晶状结构而提高材料的强度。
本发明的另一个目的是提高材料某一特定特性，即声损耗量，声损耗量对于压电陶瓷材料是特别重要的。
上述问题通过在接近固体材料表面的层中产生一个结构解决，这在原理上是新颖的。
这个结构是在材料的表面层中形成直径达200纳米的纳米截面的微孔，和位于所述微孔中的由其它材料或者同一材料制造的纳米截面微丝。
用于生产带有这种表面层结构的材料的初始材料，可以使用任何固态陶瓷材料(包括固态复合混合物)。初始材料可以是导体(例如铜、镍、钨、钢)或者半导体(例如硅、锗砷化物等)。
形成“放在纳米孔中的纳米丝”结构便于显著降低固态材料的声损耗量及由于沿“放在纳米孔中的纳米丝”结构边界的三维晶状结构排列而增加其强度。对于压电活性材料，这种效果导致畴的数量增加，其极化向量垂直地对齐“放在纳米孔中的纳米丝”结构的表面。
诸如银、金、铂或者铜应当用作压电陶瓷用的微丝的材料。
本发明的又一个目的是提供一种方法用于处理固态材料，包含：在其表面形成所述的“放在纳米孔中的纳米丝”结构。其中，微孔的形成可以通过电蚀处理材料坯件的表面达到，而把微孔填充以纳米丝可以通过丝材料的局部离子沉淀达到。
本发明的再一个目的是提供一种通过在表面层中形成所述的“放在纳米孔中的纳米丝”结构处理固态材料制造的成品部件(物品)的方法。
实施例
举例1.具有放在纳米孔中的金属丝的压电陶瓷。
在通过标准技术(把用接合机压制的压电陶瓷材料在1450℃温度下退火然后缓慢冷却)制造的压电陶瓷坯件的端面之一上用硫化锑(SSbI)制造的尖端直径20纳米的第一探头，通过加负极性脉冲(处理间距600纳米，调节电压4伏特；处理时间为每孔400毫微秒)由电蚀法形成纳米微孔。然后使用银制(尖端直径10纳米)的第二探头，施加正极性脉冲，通过局部离子沉积(处理间距600纳米，调节电压2伏特；处理时间为每孔600毫微秒)在形成的纳米孔中形成纳米丝。第一和第二探头的定位借助于扫描遂道显微镜进行。微孔的密度是每平方微米平均有3个微孔。
对用上述方法处理的一个压电陶瓷坯件进行了强度(断裂应力)研究。这是3100牛/平方毫米，而没有受过此种处理的类似坯件的强度是2200牛/平方毫米。
在所述材料中的与声损耗量成反比的电机械耦合系数从0.71增加到0.85。
举例2.微孔中放有半导体丝的金属
初始材料是钨。在钨的表面上形成深度是100-1000纳米的截面为10-200纳米的微孔。这些微孔填充以长100-1000纳米而截面为10-200纳米的丝。微孔的密度是每平方微米平均有3个微孔。微丝的材料是硅。
研究的没有使用“放在纳米孔中的纳米丝”结构的钨线强度是3600牛/平方毫米。用“放在纳米孔中的纳米丝”结构，处理后强度是4400牛/平方毫米。从而材料中的声损耗系数平均下降20％。
举例3.微孔中放有介电丝的金属
初始材料是钨。在钨的表面上形成深度是100-1000纳米的截面为10-200纳米的微孔。这些微孔填充以长100-1000纳米而截面为10-200纳米的丝。微孔的密度是每平方微米平均有3个微孔。微丝的材料是硫。
研究的没有使用“放在纳米孔中的纳米丝”结构的钨线的强度是3600牛/平方毫米。用“放在纳米孔中的纳米丝”结构，处理后强度是4100牛/平方毫米。
从而材料中的声损耗系数平均下降20％。
Claims (41)
1.一种用于处理固态材料的方法，其特征在于以下步骤：
提供一个固态材料的坯件；
至少在坯件材料的表面层中形成微孔，所述微孔有达200纳米的直径；及
用与所述微孔中的坯件不同或相同的材料形成微丝。
2.权利要求1所述的方法，其特征在于，在每个微孔中形成有几个纳米丝。
3.权利要求1或2所述的方法，其特征在于，通过电蚀处理在所述材料中形成微孔，并且用微丝材料的局部离子沉积形成微丝。
4.权利要求1或2所述的方法，其特征在于，受处理的材料是陶瓷材料，而微丝材料是金属。
5.权利要求1或2所述的方法，其特征在于，受处理的材料是压电陶瓷材料。
6.权利要求1或2所述的方法，其特征在于，微丝材料是银。
7.权利要求1或2所述的方法，其特征在于，微丝材料是金。
8.权利要求1或2所述的方法，其特征在于，微丝材料是铂。
9.权利要求1或2所述的方法，其特征在于，微丝材料是铜。
10.权利要求1或2所述的方法，其特征在于，受处理的材料是金属，而微丝材料是半导体材料。
11.权利要求1或2所述的方法，其特征在于，受处理的材料是金属，而微丝材料是介电材料。
12.一种用于处理部件的方法，包括以下步骤：
至少在制造受处理的部件的材料的表面层中形成微孔，所述微孔有达200纳米的直径；及
在所述微孔中用与该部件不同或相同的材料形成微丝。
13.权利要求12所述的方法，其特征在于，通过电蚀处理在部件的材料中形成微孔，并且用微丝材料的局部离子沉积形成微丝。
14.权利要求12或13所述的方法，其特征在于，受处理的部件是用陶瓷材料制造的，而微丝材料是金属。
15.权利要求12或13所述的方法，其特征在于，受处理的部件是用压电陶瓷材料制造的。
16.权利要求12至15中任一项所述的方法，其特征在于，微丝材料是银。
17.权利要求12或13所述的方法，其特征在于，微丝孔材料是金。
18.权利要求12或13所述的方法，其特征在于，微丝材料是铂。
19.权利要求12或13所述的方法，其特征在于，微丝材料是铜。
20.权利要求12或13所述的方法，其特征在于，受处理的部件是用金属制造的，而微丝材料是半导体材料。
21.权利要求12或13所述的方法，其特征在于，受处理的部件是用金属制造的，而微丝材料是介电材料。
22.一种固态材料，其特征在于，至少在材料的表面层中形成微孔，所述微孔有10至200纳米的直径，所述微孔中形成有不同材料的微丝。
23.权利要求22所述的材料，其特征在于，微孔的深度是100至1000纳米。
24.权利要求22或23所述的材料，其特征在于，所述的材料是陶瓷材料，而微丝由金属形成。
25.权利要求22或23所述的材料，其特征在于，所述的材料是压电陶瓷材料。
26.权利要求22或23所述的材料，其特征在于，微丝材料是银。
27.权利要求22或23所述的材料，其特征在于，微丝材料是金。
28.权利要求22或23所述的材料，其特征在于，微丝材料是铂。
29.权利要求22或23所述的材料，其特征在于，微丝材料是铜。
30.权利要求22或23所述的材料，其特征在于，所述的材料是金属，而微丝由半导体材料形成。
31.权利要求22或23所述的材料，其特征在于，所述的材料是金属，而微丝由介电材料形成。
32.一种固态材料，其特征在于，至少在材料的表面层中形成微孔，所述微孔有10至200纳米的直径，所述微孔中形成有相同材料的微丝。
33.权利要求32所述的材料，其特征在于，微孔的深度是100至1000纳米。
34.权利要求32或33所述的材料，其特征在于，所述的材料是陶瓷材料，而微丝由金属形成。
35.权利要求32或33所述的材料，其特征在于，所述的材料是压电陶瓷材料。
36.权利要求32或33所述的材料，其特征在于，微丝材料是银。
37.权利要求32或33所述的材料，其特征在于，微丝材料是金。
38.权利要求32或33所述的材料，其特征在于，微丝材料是铂。
39.权利要求32或33所述的材料，其特征在于，微丝材料是铜。
40.权利要求32或33所述的材料，其特征在于，所述的材料是金属，而微丝由半导体材料形成。
41.权利要求32或33所述的材料，其特征在于，所述的材料是金属，而微丝由介电材料形成。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/RU1998/000446 WO2000040506A1 (fr) | 1998-12-30 | 1998-12-30 | Materiau monolithique |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1336901A CN1336901A (zh) | 2002-02-20 |
| CN1177754C true CN1177754C (zh) | 2004-12-01 |
Family
ID=20130316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB988143801A Expired - Fee Related CN1177754C (zh) | 1998-12-30 | 1998-12-30 | 固态材料 |
Country Status (19)
| Country | Link |
|---|---|
| EP (1) | EP1156011A4 (zh) |
| JP (1) | JP2002534784A (zh) |
| KR (1) | KR20010108054A (zh) |
| CN (1) | CN1177754C (zh) |
| AU (1) | AU748084B2 (zh) |
| BR (1) | BR9816131A (zh) |
| CA (1) | CA2357039A1 (zh) |
| CZ (1) | CZ20012400A3 (zh) |
| EA (1) | EA002900B1 (zh) |
| EE (1) | EE200100352A (zh) |
| GB (1) | GB2365875B (zh) |
| HK (1) | HK1040975B (zh) |
| HU (1) | HUP0104899A3 (zh) |
| MX (1) | MXPA01006754A (zh) |
| NO (1) | NO20013232L (zh) |
| SK (1) | SK9302001A3 (zh) |
| TR (1) | TR200101912T2 (zh) |
| UA (1) | UA60396C2 (zh) |
| WO (1) | WO2000040506A1 (zh) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6943526B2 (en) | 2000-10-28 | 2005-09-13 | Intellikraft Limited | Rechargeable battery |
| GB2368465B (en) * | 2000-10-28 | 2003-01-22 | Intellikraft Ltd | Rechargeable battery |
| CN1502142A (zh) * | 2000-10-28 | 2004-06-02 | 可再充电的电池 | |
| GB2371327B (en) * | 2000-12-12 | 2002-11-13 | Intellikraft Ltd | Reinforced material |
| CN103341630B (zh) * | 2013-06-27 | 2015-05-13 | 广州市日森机械有限公司 | 一种微通道芯体制造工艺 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1248305B (de) * | 1964-10-02 | 1967-08-24 | Glyco Metall Werke | Gleit- oder Reibwerkstoff auf Al-, Mg- oder Ti-Basis mit oxydischer Fuellmasse |
| DE3050427A1 (en) * | 1980-06-09 | 1982-08-26 | E Filimonov | Method of making antifrictional materials |
| SU1172906A1 (ru) * | 1983-02-07 | 1985-08-15 | Московский Институт Радиотехники,Электроники И Автоматики | Способ изготовлени пьезоэлектрического керамического материала |
| US4683161A (en) * | 1985-02-28 | 1987-07-28 | Piezo Electric Products, Inc. | Ceramic body with ordered pores |
| DE3924268A1 (de) * | 1989-07-22 | 1991-01-31 | Vaw Ver Aluminium Werke Ag | Keramik-metall-verbundwerkstoff |
| DE4031623C1 (zh) * | 1990-10-05 | 1992-03-12 | Siemens Ag, 8000 Muenchen, De | |
| WO1992018213A1 (en) * | 1991-04-12 | 1992-10-29 | E.I. Du Pont De Nemours And Company | High dielectric constant flexible ceramic composite |
| RU2072280C1 (ru) * | 1993-12-10 | 1997-01-27 | Индивидуальное частное предприятие "Оптимум" | Способ обработки диэлектрических материалов |
| US5503213A (en) * | 1994-03-16 | 1996-04-02 | The Dow Chemical Company | Shaped ceramic-metal composites |
-
1998
- 1998-10-30 GB GB0019426A patent/GB2365875B/en not_active Expired - Fee Related
- 1998-12-30 EE EEP200100352A patent/EE200100352A/xx unknown
- 1998-12-30 CN CNB988143801A patent/CN1177754C/zh not_active Expired - Fee Related
- 1998-12-30 WO PCT/RU1998/000446 patent/WO2000040506A1/ru not_active Application Discontinuation
- 1998-12-30 KR KR1020017008258A patent/KR20010108054A/ko not_active Application Discontinuation
- 1998-12-30 TR TR2001/01912T patent/TR200101912T2/xx unknown
- 1998-12-30 UA UA2001075407A patent/UA60396C2/uk unknown
- 1998-12-30 AU AU38551/99A patent/AU748084B2/en not_active Ceased
- 1998-12-30 HU HU0104899A patent/HUP0104899A3/hu unknown
- 1998-12-30 CZ CZ20012400A patent/CZ20012400A3/cs unknown
- 1998-12-30 JP JP2000592222A patent/JP2002534784A/ja active Pending
- 1998-12-30 BR BR9816131-8A patent/BR9816131A/pt not_active IP Right Cessation
- 1998-12-30 MX MXPA01006754A patent/MXPA01006754A/es unknown
- 1998-12-30 SK SK930-2001A patent/SK9302001A3/sk unknown
- 1998-12-30 EA EA200100604A patent/EA002900B1/ru not_active IP Right Cessation
- 1998-12-30 EP EP98967054A patent/EP1156011A4/en not_active Withdrawn
- 1998-12-30 CA CA002357039A patent/CA2357039A1/en not_active Abandoned
-
2001
- 2001-06-27 NO NO20013232A patent/NO20013232L/no not_active Application Discontinuation
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2002
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Also Published As
| Publication number | Publication date |
|---|---|
| EP1156011A4 (en) | 2006-08-09 |
| NO20013232L (no) | 2001-08-07 |
| EA200100604A1 (ru) | 2001-12-24 |
| WO2000040506A1 (fr) | 2000-07-13 |
| HUP0104899A3 (en) | 2002-04-29 |
| EE200100352A (et) | 2002-10-15 |
| CA2357039A1 (en) | 2000-07-13 |
| AU748084B2 (en) | 2002-05-30 |
| BR9816131A (pt) | 2001-10-09 |
| SK9302001A3 (en) | 2002-01-07 |
| GB2365875A9 (en) | 2002-11-20 |
| CZ20012400A3 (cs) | 2002-03-13 |
| HUP0104899A2 (hu) | 2002-03-28 |
| EA002900B1 (ru) | 2002-10-31 |
| CN1336901A (zh) | 2002-02-20 |
| MXPA01006754A (es) | 2003-06-24 |
| UA60396C2 (uk) | 2003-10-15 |
| AU3855199A (en) | 2000-07-24 |
| NO20013232D0 (no) | 2001-06-27 |
| TR200101912T2 (tr) | 2002-09-23 |
| HK1040975B (zh) | 2003-08-01 |
| GB2365875B (en) | 2003-03-26 |
| JP2002534784A (ja) | 2002-10-15 |
| WO2000040506A8 (fr) | 2001-05-25 |
| KR20010108054A (ko) | 2001-12-07 |
| GB0019426D0 (en) | 2000-09-27 |
| EP1156011A1 (en) | 2001-11-21 |
| HK1040975A1 (en) | 2002-06-28 |
| GB2365875A (en) | 2002-02-27 |
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