AU748084B2 - Solid-state material - Google Patents

Solid-state material Download PDF

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Publication number
AU748084B2
AU748084B2 AU38551/99A AU3855199A AU748084B2 AU 748084 B2 AU748084 B2 AU 748084B2 AU 38551/99 A AU38551/99 A AU 38551/99A AU 3855199 A AU3855199 A AU 3855199A AU 748084 B2 AU748084 B2 AU 748084B2
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AU
Australia
Prior art keywords
pores
filling
accordance
filaments
treated
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Ceased
Application number
AU38551/99A
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AU3855199A (en
Inventor
Vladimir Stepanovich Dubinin
Dmitry Vladimirovich Frolov
Elena Igorevna Krutova
Jury Leonidovich Spirin
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Oxis Energy Ltd
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Oxis Energy Ltd
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Publication date
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Publication of AU3855199A publication Critical patent/AU3855199A/en
Application granted granted Critical
Publication of AU748084B2 publication Critical patent/AU748084B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/4596—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with fibrous materials or whiskers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/88—Metals
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/09—Forming piezoelectric or electrostrictive materials
    • H10N30/092—Forming composite materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Inorganic Chemistry (AREA)
  • Catalysts (AREA)
  • Porous Artificial Stone Or Porous Ceramic Products (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Powder Metallurgy (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Micromachines (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Inorganic Fibers (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Description

SOLID STATE MATERIAL Technology field The invention relates to processes for the treatment of solid state materials, including steels, structural alloys, semiconductor materials, dielectrics, ferrites, piezo-ceramic materials etc., with the aim of imparting improved characteristics to them. It can also be used for the treatment of components (articles).
Prior art One of the known directions in the treatment of solid state materials with the aim of improving their characteristics is to provide for the presence in the surface layer of the material of certain additives to improve specific characteristics of the material, in particular, its strength.
There is a known solid state material (USSR Authorship Certificate No. 1220104), the layer of which close to the surface contains an admixture of gold as an additive.
The problem with this material is insufficient strength, due to the absence of regular ordering of the crystalline lattice in the regions close to the surface.
There is a known solid state material Parashchenko, M.M. Rakhmankulov and A.P. Tsisin, "Technology of casting under pressure", Moscow: Metallurgiya, 1996, p.
187), the layer of which close to the surface contains an admixture of boron, carbon, sulfur, chromium or aluminium as an additive.
The problem with this material is also the absence of regular ordering of the crystalline lattice in the regions close to the surface.
There is a known piezo-ceramic material (USSR Authorship Certificate No. 1172906) on the basis of a solid solution of oxides of zirconium, lead and barium, the layer of which close to the surface contains an enhanced concentration of lead (by 0.5-0.8% overall), which leads to the formation of additional surface centres of crystallisation.
However, this material too has insufficient strength, due to the absence of regular ordering of the crystalline lattice of the monocrystalline grains in the surface layers.
1' .r; 3 Substance of the Invention According to a first aspect, the present invention consists in a treatment process for solid state materials, wherein it includes the following operations: the provision of a blank of solid state material; the formation of pores at least in the surface layer of the blank material, said pores having a diameter of up to 200nm; the filling of the said pores with filaments made from a different material or from the same material as that of the blank.
According to a second aspect, the present invention consists in a process for treating components, comprising: the formation of pores at least in the surface layer of the material form which the component being treated is made, said pores having a size of up to 200nm; filling the said pores with filaments made from a different material or from the same material as that of the component.
s15 According to a third aspect, the present invention consists in a solid state material, wherein pores with a diameter of 10 to 200nm are formed at least in a surface layer of the material, and filaments of a different material are placed in the pores.
According to a fourth aspect, the present invention consists in a solid state material, wherein pores with a diameter of 10 to 200nm are formed at least in a surface layer of the material, and filaments of the same material are placed in the pores.
One of the aims of the invention is to raise the strength of the material by the threedimensional ordering of the initial crystalline structure of the material in its layers close to the surface.
Another aim solved by this invention is to improve a specific characteristic of the material, namely the magnitude of acoustic losses, which is fundamentally significant for 0 piezo-ceramic materials.
These problems are solved by the creation of a structure in the layer close to the surface of the solid state material which is new in principle.
The structure consists of pores of nanometric cross section formed in the surface layer of the material, with diameter up to 200 nm, and filaments of nanometric cross section (up to 200 nm) located in the pores, made of another material or of the same material.
[R:\LIBFF] 1O246spcci.doc:njc 3a For the initial material for producing the material with this surface layer structure, any solid state crystalline ceramic material (including solid composite mixtures) can be used. The initial material may be a conductor copper, nickel, titanium, steel) or a semiconductor silicon, gallium arsenide).
The formation of a "nanofilament laid in nanopore" structure facilitates a significant reduction in the level of acoustic losses of the solid state material and an increase in its strength due to the three-dimensional ordering of the crystalline structure along the boundaries of the "nanofilament laid in nanopore" structures. For piezo-active materials, this effect leads to an increase in the quantity of domains, the polarisation vector of which is aligned normally to the surface of the "nanofilament laied in nanopore" structure.
Such metals as silver, gold, platinum or copper should be used as the material for the filaments for piezo-ceramics.
Another object of the invention is a process for the treatment of solid state material consisting of forming the said "nanofilament laid in nanopore" structure in its surface 15 layer. In this, the formation of the nanopores can be achieved by the electrical erosion treatment of the surface of the blank of the material, and the filling of them with nanofilaments by local ion precipitation of the filament material.
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[R:\LBFF]I 0246speci.doc:njc A further object of the invention is a process for the treatment of finished components (articles) of solid state materials by forming the said "nanofilament laid in nanopore" structure in the surface layer.
Examples of the implementation of the invention.
Example 1. Piezo-ceramic with metal filaments laid in pores.
Nanopores are formed on one of the endfaces of a piezo-ceramic blank produced by standard technology (pressed piezo-ceramic charge with binder is fired at temperature 1450°C and gradually cooled) by the electrical erosion method using a first probe of point diameter 20 nm, made of antimony sulfoiodide (SSbI), by supplying pulses of negative polarity (pitch of treatment 600 nm, modifying voltage 4 V; treatment time for each pore 400 nsec). A second probe, made of silver (point diameter 10 nm) is then used, with pulses of positive polarity supplied, to form nanofilaments of Ag in the formed nanopores by the method of local ion precipitation (pitch of treatment 600 nm; modifying voltage 2 V; treatment time for each pore 600 nsec). The positioning of the first and second probes is carried out with the aid of a scanning tunnel microscope. The concentration of pores averaged 3 pores per tm 2 A piezo-ceramic plate treated by the described method was subjected to study for strength (breaking strain). This was 3100 n/mm 2 whereas the strength of an analogous plate which had not been subjected to this treatment was 2200 n/mm 2 The electromechanical coupling coefficient, which is inversely proportional to the value of the acoustic losses in the material, increased from 0.71 to 0.85.
Example 2. Metal with semiconductor filaments laid in the pores.
The initial material is tungsten. Pores of cross section 10-200 nm are formed in the surface of the tungsten to a depth of 100-1000 nm. The pores are filled with filaments of length 100-1000 nm, cross section 10-200 nm. The concentration of pores averages 3 pores per tm 2 The filament material is silicon.
The strength of studied tungsten wire without the use of the "nanofilament laid in nanopore" structure was 3600 n/mm 2 With the use of the "nanofilament laid in nanopore" structure, the strength after treatment was 4400 n/mm 2 The coefficient of acoustic losses in the material was thereby reduced on average by tple 3. Metal with dielectric filaments laid in the pores.
The initial material is tungsten. Pores of cross section 10-200 nm are formed in the surface of the tungsten to a depth of 100-1000 nm. The pores are filled with filaments of length 100-1000 nm and cross section 10-200 nm. The concentration of pores averages 3 pores per m 2 The filament material is sulfur.
The strength of studied tungsten wire without the use of the "nanofilament laid in nanopore" structure was 3600 n/mm 2 With the use of the "nanofilament laid in nanopore" structure, after treatment, the strength was 4100 n/mm 2 The coefficient of acoustic losses in the material was thereby reduced on average by

Claims (25)

1. A treatment process for solid state materials, wherein it includes the following operations: the provision of a blank of solid state material; the formation of pores at least in the surface layer of the blank material, said pores having a diameter of up to 200nm; the filling of the said pores with filaments made from a different material or from the same material as that of the blank.
2. A process in accordance with claim 1, wherein several nanofilaments are placed in each pore.
3. A process in accordance with claim 1 or 2, wherein the pores are formed in the material by electrical erosion treatment, and the filling of the pores is carried out by local ion precipitation of the filament material.
4. A process in accordance with any one of claims 1 to 3, wherein the material :.i being treated is a ceramic material, and the material for filling the pores is metal. A process in accordance with any one of the preceding claims, wherein the material being treated is piezo-ceramic. o
6. A process in accordance with any one of claims 1 to 5, wherein the material for filling the pores is silver. °oo 20 7. A process in accordance with any one of claims 1 to 5, wherein the material :.00 •for filling the pores is gold. a S.0 8. A process in accordance with any one of claims 1 to 5, wherein the material e. for filling the pores is platinum. 0• 9. A process in accordance with any one of claims 1 to 5, wherein the material 99960 :•0oo 25 for filling the pores is copper. S0:
10. A process in accordance with any one of claims 1 to 3, wherein the material being treated is metal, and the material for filling the pores is a semiconductor material.
11. A process in accordance with any one of claims 1 to 3, wherein the material being treated is metal, and the material for filling the pores is a dielectric material.
12. A process for treating components, comprising: the formation of pores at least in the surface layer of the material from which the component being treated is made, said pores having a size of up to 200nm; filling the said pores with filaments made from a different material or from the same material as that of the component. [R:\LIBFF]I O246speci.doc: njc tia 7
13. A process in accordance with claim 12, wherein the pores are formed in the material of the component by electrical erosion treatment, and the filling of them is carried out by local ion precipitation of the filament material.
14. A process in accordance with claim 12 or 13, wherein the component being treated is made of a ceramic material, and the pore-filling material is metal. A process in accordance with any one of claims 12 to 14, wherein the component being treated is made of a piezo-ceramic material.
16. A process in accordance with any one of claims 12 to 15, wherein the material for filling the pores is silver.
17. A process in accordance with any one of claims 12 to 15, wherein the material for filling the pores is gold.
18. A process in accordance with any one of claims 12 to 15, wherein the material for filling the pores is platinum.
19. A process in accordance with any one of claims 12 to 15, wherein the material ¢oooo is for filling the pores is copper. A process in accordance with claim 12 or 13, wherein the component being treated is made of metal, and the material for filling the pores is a semiconductor material. *r 0
21. A process in accordance with claim 12 or 13, wherein the component being treated is made of metal, and the material for filling the pores is a dielectric material. 20 22. A solid state material, wherein pores with a diameter of 10 to 200nm are formed at least in a surface layer of the material, and filaments of a different material are *woo placed in the pores.
23. A solid state material, wherein pores with a diameter of 10 to 200nm are 2 formed at least in a surface layer of the material, and filaments of the same material are 25 placed in the pores.
24. A material as claimed in claim 22 or 23, wherein the pores have a depth from 100 to 1000nm. A material as claimed in any one of claims 22 to 24, wherein it is a ceramic material, and the filaments filling the pores are made of metal.
26. A material as claimed in any one of claims 22 to 25, wherein it is piezo- ceramic.
27. A material as claimed in any one of claims 22 to 26, wherein the filaments filling the pores are made of silver. 3 28. A material as claimed in any one of claims 22 to 26, wherein the filaments 3 filling the pores are made of gold. [R:\LIBFF]1IO246speci.doc:njc 8
29. A material in accordance with any one of claims 22 to 26, wherein the filaments filling the pores are made of platinum. A material in accordance with any one of claims 22 to 26, wherein the filaments filling the pores are made of copper.
31. A material in accordance with any one of claim 22 to 24, wherein it is metal, and the filaments filling the pores are made of a semiconductor material.
32. A material in accordance with any one of claims 22 to 24, wherein it is metal, and the filaments filling the pores are made of a dielectric material.
33. A treatment process for solid state materials, said process being substantially o0 as hereinbefore described with reference to any one of the examples.
34. Solid state materials treated by the process of any one of claims 1 to 11 or 33. A process for treating components, said process being substantially as hereinbefore described with reference to any one of the examples.
36. Components treated by the process of any one of claims 12 to 21 or 15 37. A solid state material, substantially as hereinbefore described with reference to any one of the examples. Dated 15 February, 2002 Intellikraft Limited Patent Attorneys for the Applicant/Nominated Person 20 SPRUSON FERGUSON t o be 5 S [R:\LIBFF] I O246spcci.doc:njc
AU38551/99A 1998-12-30 1998-12-30 Solid-state material Ceased AU748084B2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/RU1998/000446 WO2000040506A1 (en) 1998-12-30 1998-12-30 Solid-state material

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AU3855199A AU3855199A (en) 2000-07-24
AU748084B2 true AU748084B2 (en) 2002-05-30

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EP (1) EP1156011A4 (en)
JP (1) JP2002534784A (en)
KR (1) KR20010108054A (en)
CN (1) CN1177754C (en)
AU (1) AU748084B2 (en)
BR (1) BR9816131A (en)
CA (1) CA2357039A1 (en)
CZ (1) CZ20012400A3 (en)
EA (1) EA002900B1 (en)
EE (1) EE200100352A (en)
GB (1) GB2365875B (en)
HK (1) HK1040975B (en)
HU (1) HUP0104899A3 (en)
MX (1) MXPA01006754A (en)
NO (1) NO20013232L (en)
SK (1) SK9302001A3 (en)
TR (1) TR200101912T2 (en)
UA (1) UA60396C2 (en)
WO (1) WO2000040506A1 (en)

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Publication number Priority date Publication date Assignee Title
US6943526B2 (en) 2000-10-28 2005-09-13 Intellikraft Limited Rechargeable battery
GB2368465B (en) * 2000-10-28 2003-01-22 Intellikraft Ltd Rechargeable battery
CN1502142A (en) * 2000-10-28 2004-06-02 Rechargeable battery
GB2370587B (en) * 2000-12-12 2002-11-13 Intelikraft Ltd Reinforced material
CN103341630B (en) * 2013-06-27 2015-05-13 广州市日森机械有限公司 Micro-channel core manufacturing process

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1248305B (en) * 1964-10-02 1967-08-24 Glyco Metall Werke Sliding or friction material based on Al, Mg or Ti with oxidic filler
US4683161A (en) * 1985-02-28 1987-07-28 Piezo Electric Products, Inc. Ceramic body with ordered pores

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Publication number Priority date Publication date Assignee Title
US4420539A (en) * 1978-01-28 1983-12-13 Kostikov Valery I Process for producing antifriction materials
SU1172906A1 (en) * 1983-02-07 1985-08-15 Московский Институт Радиотехники,Электроники И Автоматики Process for manufacturing piezoelectric ceramic material
DE3924268A1 (en) * 1989-07-22 1991-01-31 Vaw Ver Aluminium Werke Ag CERAMIC METAL COMPOSITE
DE4031623C1 (en) * 1990-10-05 1992-03-12 Siemens Ag, 8000 Muenchen, De
WO1992018213A1 (en) * 1991-04-12 1992-10-29 E.I. Du Pont De Nemours And Company High dielectric constant flexible ceramic composite
RU2072280C1 (en) * 1993-12-10 1997-01-27 Индивидуальное частное предприятие "Оптимум" Dielectric material working method
US5503213A (en) * 1994-03-16 1996-04-02 The Dow Chemical Company Shaped ceramic-metal composites

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1248305B (en) * 1964-10-02 1967-08-24 Glyco Metall Werke Sliding or friction material based on Al, Mg or Ti with oxidic filler
US4683161A (en) * 1985-02-28 1987-07-28 Piezo Electric Products, Inc. Ceramic body with ordered pores

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MXPA01006754A (en) 2003-06-24
EE200100352A (en) 2002-10-15
NO20013232L (en) 2001-08-07
CN1177754C (en) 2004-12-01
UA60396C2 (en) 2003-10-15
AU3855199A (en) 2000-07-24
CA2357039A1 (en) 2000-07-13
HK1040975B (en) 2003-08-01
JP2002534784A (en) 2002-10-15
BR9816131A (en) 2001-10-09
GB2365875A (en) 2002-02-27
HK1040975A1 (en) 2002-06-28
CZ20012400A3 (en) 2002-03-13
HUP0104899A2 (en) 2002-03-28
EA002900B1 (en) 2002-10-31
EA200100604A1 (en) 2001-12-24
KR20010108054A (en) 2001-12-07
SK9302001A3 (en) 2002-01-07
HUP0104899A3 (en) 2002-04-29
GB0019426D0 (en) 2000-09-27
GB2365875A9 (en) 2002-11-20
EP1156011A4 (en) 2006-08-09
GB2365875B (en) 2003-03-26
WO2000040506A8 (en) 2001-05-25
EP1156011A1 (en) 2001-11-21
TR200101912T2 (en) 2002-09-23
NO20013232D0 (en) 2001-06-27
WO2000040506A1 (en) 2000-07-13
CN1336901A (en) 2002-02-20

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