CN117524963A - Wafer edge inspection device based on laser and control method thereof - Google Patents
Wafer edge inspection device based on laser and control method thereof Download PDFInfo
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- CN117524963A CN117524963A CN202410019678.8A CN202410019678A CN117524963A CN 117524963 A CN117524963 A CN 117524963A CN 202410019678 A CN202410019678 A CN 202410019678A CN 117524963 A CN117524963 A CN 117524963A
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- 238000007689 inspection Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 28
- 230000007246 mechanism Effects 0.000 claims abstract description 44
- 238000001514 detection method Methods 0.000 claims abstract description 19
- 238000005259 measurement Methods 0.000 claims abstract description 5
- 235000012431 wafers Nutrition 0.000 claims description 195
- 230000008859 change Effects 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 10
- 230000001276 controlling effect Effects 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 238000007665 sagging Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 4
- 238000005096 rolling process Methods 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Abstract
The invention relates to a wafer edge inspection device based on laser and a control method thereof, comprising the following steps: a work table; the rotating mechanism comprises a negative pressure sucker; the centrifugal force detection mechanism comprises a negative pressure sucker cover body, a rotating bearing, a bearing mounting seat and a pressure sensor, wherein the negative pressure sucker cover body is covered on the negative pressure sucker, and the detection end of the pressure sensor is abutted to the outer ring of the rotating bearing; the laser projector can be arranged in a swinging way; and the control system is used for controlling the projection angle of the laser projector according to the data of the pressure sensor so as to prolong or shorten the shadow which is presented by the laser receiver after the projection laser emitted by the laser projector is shielded by the wafer, thereby correcting the edge measurement data of the laser receiver on the wafer.
Description
Technical Field
The invention relates to the field of edge inspection devices, in particular to a wafer edge inspection device based on laser and a control method thereof.
Background
Wafers are thin sheets of semiconductor, such as crystalline silicon (c-Si), used to fabricate integrated circuits. The existing wafer is generally cut into a thickness of 0.3-0.75 mm and a size of 3-17 inches, and the corresponding patterns of the chips are etched on one surface of the wafer through processes such as etching.
The wafer is circular structure, and the wafer is cut after accomplishing, generally places on the wafer rack body, because the structure of wafer is more fragile, and the wafer requirement can not have the mar etc. therefore the wafer rack body is generally reserved has sufficient space, prevents that the wafer from being bumped or scratched at the in-process of getting and placing. The wafer needs to be pre-positioned, i.e. the center of the wafer is found, before subsequent processing. In the prior art, the wafer is generally positioned in advance through a wafer edge inspection device, the wafer is rotated for a plurality of circles through the wafer edge inspection device, and the circle center of the wafer is calculated through the edge data of the wafer. In order to reduce scratches caused by touching the wafer, the wafer edge inspection device is generally provided with a rotating disk only at the center of the wafer edge inspection device, and the wafer is driven to rotate by the rotating disk. Because the wafer is very thin and has a large diameter, when the wafer is supported only at its center, the wafer will sag under the action of gravity at its middle high edge, as shown in fig. 1. Because the positions of the wafers on the rotating disc are random, the circle centers of the wafers deviate from the rotation centers of the rotating disc, so that after the wafers are placed on the rotating disc, one end of each wafer, which deviates from the circle centers, is lower in sagging, as shown in fig. 2.
The existing wafer edge inspection device scans the edge of a wafer through a vertical downward laser displacement sensor, and the circle center obtained through calculation can also deviate due to the fact that the height difference of the edge of the wafer is generated by deviation between the rotation center of the wafer and the circle center, the circle scanned by the vertical downward laser displacement sensor is shortened, and the circle center obtained through calculation is also deviated.
The invention aims at solving the problems in the prior art and designs a wafer edge inspection device based on laser and a control method thereof.
Disclosure of Invention
The invention aims to solve the problems in the prior art, and provides a wafer edge inspection device based on laser and a control method thereof, which can effectively solve at least one problem in the prior art.
The technical scheme of the invention is as follows:
a laser-based wafer edge inspection device, comprising:
a work table;
the rotating mechanism comprises a negative pressure sucker and a rotating motor, the negative pressure sucker is arranged on the upper end face of the workbench in a protruding mode, the negative pressure sucker is driven by the rotating motor to rotate above the workbench, and the negative pressure sucker is connected to an external negative pressure source through the rotating motor;
the centrifugal force detection mechanism comprises a negative pressure sucker cover body, a rotating bearing, a bearing mounting seat and a pressure sensor, wherein the negative pressure sucker cover body is covered on the negative pressure sucker, the negative pressure sucker cover body can horizontally move on the upper end face of the negative pressure sucker, the inner ring of the rotating bearing is fixedly connected to the periphery of the negative pressure sucker cover body, the rotating bearing mounting seat is fixedly connected to the outer ring of the rotating bearing, the rotating bearing mounting seat is provided with a through groove, the pressure sensor is fixedly arranged in the through groove, and the detection end of the pressure sensor is abutted to the outer ring of the rotating bearing;
the laser projector is arranged above the circumference of the wafer on the workbench, the laser receiver is arranged below the laser projector, and the laser projector can swing;
and the control system is used for controlling the projection angle of the laser projector according to the data of the pressure sensor so as to prolong or shorten the shadow which is presented by the laser receiver after the projection laser emitted by the laser projector is shielded by the wafer, thereby correcting the edge measurement data of the laser receiver on the wafer.
Further, the upper surface of the negative pressure sucker cover body is provided with a plurality of vent holes communicated to the negative pressure sucker.
Further, the negative pressure sucker is higher than the outer ring of the rotating bearing.
Further, a group of sliding rails and a rotating mechanism driving device are arranged in the workbench along the front-back direction, the rotating mechanism is connected between a group of sliding rails, a movable groove is formed in the upper end face of the workbench, and the rotating mechanism driving device drives the negative pressure sucker to move back and forth in the movable groove;
the workbench is provided with a plurality of threaded holes which are arranged side by side, and the rotary bearing mounting seat is locked and arranged on the workbench through the cooperation of a plurality of threaded holes and bolts.
Further, the workbench is provided with a laser projector connecting plate at the upper end of the workbench, the middle position of the laser projector is hinged to the laser projector connecting plate, the bottom end of the laser projector is connected to the laser projector connecting plate through an elastic piece, and the top end of the laser projector is driven by a laser projector driving device, so that the laser projector swings around the middle position of the laser projector.
Further, the top of laser projector towards the fixed connecting block that is provided with of one side of laser projector connecting plate, laser projector drive arrangement including set up in the servo electronic jar on the top of laser projector connecting plate, servo electronic jar drive has the drive block, the drive block with the connecting block inclined plane is connected, servo motor passes through the drive block with the cooperation of connecting block changes laser projector's angle.
Further, the through groove is formed in the direction that the rotating bearing mounting seat faces to the position between the laser projector and the laser receiver.
The control method of the wafer edge inspection device based on the laser further comprises the following steps:
the wafer is driven to rotate through the rotating mechanism;
and in the process that the rotating mechanism drives the wafer to rotate, the centrifugal force generated by the wafer to the pressure sensor is detected through the centrifugal force detection mechanism, and the projection angle of the laser projector is adjusted according to the centrifugal force.
Further, before the wafer is driven to rotate by the rotating mechanism, the following steps are performed:
the circle centers of the wafers are placed at different positions on the negative pressure sucker cover body, the difference value between the actual positions and the theoretical positions of the circumferences of the wafers at the different positions is measured, and the compensation quantity of each point of the circumferences of the wafers at the different positions is obtained;
placing the circle centers of the wafers at different positions on the negative pressure sucker cover body, and measuring the centrifugal force of the wafers at different positions on the centrifugal force detection mechanism and the orientation of the wafers at a fixed rotating speed to obtain the relationship between the maximum centrifugal force and the placing position of the wafers and the relationship between the centrifugal force and the orientation of the wafers;
swinging the laser projector to obtain the change relation of the projection angle to the circumference of the wafer;
adjusting the projection angle of the laser projector according to the centrifugal force includes:
and in the process that the rotating mechanism drives the wafer to rotate, the placing position of the wafer is obtained according to the relation between the maximum centrifugal force and the placing position of the wafer, the compensation quantity required by each point of the circumference of the wafer is obtained according to the placing position of the wafer, the position of the laser projector irradiating the circumference of the wafer is calculated according to the relation between the centrifugal force and the direction of the wafer, and the projection angle of the laser projector is regulated according to the change relation of the projection angle to the circumference of the wafer and the required compensation quantity.
Accordingly, the present invention provides the following effects and/or advantages:
according to the invention, through the structure that the laser projector can swing, the irradiation direction of the projection laser can be changed, and the shadow length cast by the wafer can be lengthened or reduced by matching with the shielding effect of the wafer, so that the circumferential diameters of the wafer under different conditions are compensated, and the accuracy of the circle center, the radius and the like calculated by the wafer edge inspection device is improved.
The invention drives the swing of the laser projector through the servo electric cylinder, and can precisely control the swing angle of the laser projector, thereby adapting to the rotation direction of the wafer and the shape change of the wafer.
According to the method for controlling the wafer edge inspection device, various relations can be obtained through calculation, and the swing angle of the laser projector is accurately controlled through combination of the various relations, so that the adaptability adjustment of different wafer positions and different rotation orientations is realized.
It is to be understood that both the foregoing general description and the following detailed description of the present invention are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.
Drawings
Fig. 1 is a schematic view showing a state where a wafer is theoretically horizontally developed (a dotted line portion) and actually circumferentially sagged (a solid line portion).
Fig. 2 is a schematic diagram showing a state where the center of the wafer overlaps with the center of the rotating disk (dotted line portion) and the center of the wafer is offset (solid line portion).
Fig. 3 is a schematic structural diagram of an embodiment of the present invention.
Fig. 4 is a schematic diagram of an internal structure of an embodiment of the present invention.
Fig. 5 is a schematic cross-sectional view of a structure according to an embodiment of the present invention.
Fig. 6 is a schematic exploded view of the centrifugal force detection mechanism.
Fig. 7 is a schematic exploded view of the negative pressure cup housing and the negative pressure cup.
Fig. 8 is a schematic view showing a state in which the laser projector irradiates vertically downward.
Fig. 9 is a schematic view of the state after the laser projector swings by an angle a.
Fig. 10 is an explanatory view of the wafer rotation direction.
FIG. 11 is a schematic diagram of a fitted curve before and after compensation.
Reference numerals illustrate: the device comprises a workbench 1, a sliding rail 101, a rotating mechanism driving device 102, a threaded hole 103, a movable groove 104, a rotating mechanism 2, a rotating motor 201, a negative pressure sucker 202, a centrifugal force detection mechanism 3, a negative pressure sucker cover 301, a rotating bearing 302, a bearing mounting seat 303, a pressure sensor 304, a laser projector 4, a connecting block 401, a driving block 402, a servo electric cylinder 403, an elastic piece 404, a laser light receiver 5 and a laser projector connecting plate 6.
Detailed Description
For the convenience of understanding by those skilled in the art, the structure of the present invention will now be described in further detail with reference to the accompanying drawings:
referring to fig. 3-7, a laser-based wafer edge inspection apparatus, comprising:
a work table 1;
the rotating mechanism 2 comprises a negative pressure sucker 202 and a rotating motor 201, wherein the negative pressure sucker 202 is convexly arranged on the upper end surface of the workbench 1, the negative pressure sucker 202 is driven by the rotating motor 201 to rotate above the workbench 1, the negative pressure sucker 202 is connected to an external negative pressure source through the rotating motor 201, and the rotating mechanism 2 is used for placing a wafer and driving the wafer to rotate;
the centrifugal force detection mechanism 3, the centrifugal force detection mechanism 3 includes a negative pressure suction cup cover 301, a rotating bearing 302, a bearing mounting seat 303, and a pressure sensor 304, the negative pressure suction cup cover 301 is covered on the negative pressure suction cup 202, the negative pressure suction cup cover 301 can move horizontally on the upper end surface of the negative pressure suction cup 202, the inner ring of the rotating bearing 302 is fixedly connected to the outer periphery of the negative pressure suction cup cover 301, the rotating bearing mounting seat 303 is fixedly connected to the outer ring of the rotating bearing 302, the rotating bearing mounting seat 303 is provided with a through groove, the pressure sensor 304 is fixedly arranged in the through groove, and the detection end of the pressure sensor 304 is abutted to the outer ring of the rotating bearing 302;
referring to fig. 11, the suction cup housing 301 is connected to the suction cup 202 by four springs arranged in a cross shape, thereby realizing a structure that can be horizontally moved on the upper end surface of the suction cup 202. In the process of rotation, due to the connection relationship of the negative pressure suction cup cover 301, the rotating bearing 302 and the bearing mounting seat 303, the negative pressure suction cup cover 301 does not move horizontally, but transmits the received centrifugal force to the pressure sensor 304 on the basis of a structure capable of moving horizontally.
The laser projector 4 and the laser light receiver 5 are arranged above the circumference of the wafer on the workbench 1, the laser light receiver 5 is arranged below the laser projector 4, and the laser projector 4 can swing;
and the control system (not shown) is used for controlling the light projection angle of the laser light projector 4 according to the data of the pressure sensor 304 so as to prolong or shorten the shadow which is presented on the laser light receiver 5 after the projection laser emitted by the laser light projector 4 is blocked by the wafer, thereby correcting the edge measurement data of the laser light receiver 5 on the wafer.
In the embodiment, the structure that the laser projector 4 of the wafer edge inspection device is fixedly arranged is changed, and the laser projector 4 is arranged to be in a swinging structure. When the wafer is in a theoretical planar structure, as shown in the shadow of fig. 8, the laser projector 4 projects at the laser light receiver 5, and when the periphery of the wafer sags, the periphery of the wafer is shortened compared with the periphery of the theoretical planar structure, as shown in fig. 9, at this time, the distance between the periphery of the wafer and the laser light receiver 5 is defined as L by the angle of the lower hem a of the laser projector 4, and at this time, the projection of the wafer on the laser light receiver 5 is prolonged after the lower hem of the laser projector 4Thereby compensating for the circumference shortening after sagging of the wafer.
Meanwhile, the centrifugal force detection mechanism 3 is further added, the centrifugal force detection mechanism can be on the structural basis that the upper end face of the negative pressure sucker 202 moves horizontally through the negative pressure sucker cover 301, the top face of the negative pressure sucker cover 301 is used for absorbing a wafer under negative pressure, and under the condition that the circle center of the wafer is not coincident with the rotation center of the negative pressure sucker cover 301, one side of the wafer, deviating from the center of the negative pressure sucker cover 301, is larger in pressure on the negative pressure sucker cover 301, and when the negative pressure sucker cover 301 drives the wafer to rotate, the wafer generates centrifugal force on the negative pressure sucker cover 301. Centrifugal force is transmitted to the pressure sensor 304 through the rotating bearing 302 and the bearing mounting 303, the centrifugal force generated by the eccentric wafer on the side deviating from the center of the negative pressure suction cup cover 301 is larger during rotation, the centrifugal force generated by the side of the wafer approaching the center of the negative pressure suction cup cover 301 is smaller during rotation, and the pressure corresponding to the centrifugal force of the wafer on the pressure sensor 304 is gradually increased during rotation of the wafer on the side deviating from the center of the negative pressure suction cup cover 301 to the side approaching the center of the negative pressure suction cup cover 301 (direction 2), and conversely, the pressure corresponding to the centrifugal force of the wafer on the pressure sensor 304 is gradually decreased during rotation of the wafer on the side approaching the center of the negative pressure suction cup cover 301 to the side departing from the center of the negative pressure suction cup cover 301 (direction 1), referring to fig. 10. Therefore, the orientation of the wafer when pressure is applied to the pressure sensor 304 at this time can be determined based on the data change of the pressure sensor 304.
The calculation principle is as follows: the wafer orientation may be obtained based on the change in pressure applied by the wafer to the pressure sensor 304. And sagging of the circumference of the wafer can be defined as a linearly varying function, for example, when the wafer is eccentrically placed, the maximum sagging amount is 5mm and the minimum sagging amount is 2mm, and the wafer can be considered to linearly vary by 3 mm/pi from the side far from the center of the suction cup housing 301 to the side near the center of the suction cup housing 301. In addition, the change of the centrifugal force in the rotation process of the wafer can be defined as a linear change function, for example, in the rotation process when the wafer is eccentrically placed, the maximum pressure of the pressure sensor 304 is 10N, and the minimum pressure is 0N, so that the wafer can be considered to be linearly changed by 10N/pi from one side far from the center of the negative pressure suction cup cover 301 to one side close to the center of the negative pressure suction cup cover 301, the position of the wafer at the moment when the circumference of the wafer falls on the laser projector 4 can be reversely deduced according to the data of the pressure sensor 304, the sagging amount of the circumference of the wafer at the moment is deduced, and the wafer is compensated by swinging the laser projector 4 by a certain angle.
The method for calculating the circle center can be a least square fitting circle, and the method is irrelevant to the actual improvement point of the application and can refer to the prior art.
Further, the upper surface of the suction cup cover 301 is provided with a plurality of ventilation holes communicated to the suction cup 202.
Further, the suction cup 202 is higher than the outer race of the rolling bearing 302.
Through this structure setting, can let the wafer place on negative pressure sucking disc 202 and negative pressure sucking disc cover body 301, the position of wafer is higher than the outer lane of rolling bearing 302, prevents that the in-process of wafer pivoted from scraping with the outer lane of rolling bearing 302 and rubbing and forming the mar.
Further, a set of sliding rails 101 along the front-back direction and a rotating mechanism driving device 102 are arranged in the workbench 1, the rotating mechanism 2 is connected between a set of sliding rails 101, a movable groove 104 is formed in the upper end surface of the workbench 1, and the rotating mechanism driving device 102 drives the negative pressure sucker 202 to move back and forth in the movable groove 104;
the workbench 1 is provided with a plurality of threaded holes 103 which are arranged side by side, and the rotary bearing mounting seat 303 is locked and arranged on the workbench 1 through the cooperation of a plurality of the threaded holes 103 and bolts.
According to the embodiment, through the cooperation of the movable groove 104 and the threaded hole 103, the rotating mechanism 2 can be driven and arranged at a certain position of the movable groove 104, and then the wafers with different sizes can be adapted through the locking function of the threaded hole 103 and the bolt for positioning.
Further, the workbench 1 is provided with a laser projector connecting plate 6 at the upper end thereof, the middle position of the laser projector 4 is hinged to the laser projector connecting plate 6, the bottom end of the laser projector 4 is connected to the laser projector connecting plate 6 through an elastic piece 404, and the top end of the laser projector 4 is driven by a laser projector driving device, so that the laser projector 4 swings around the middle position thereof.
Further, a connection block 401 is fixedly arranged on one surface of the top end of the laser projector 4, which faces the laser projector connection plate 6, the laser projector driving device comprises a servo electric cylinder 403 arranged on the top end of the laser projector connection plate 6, the servo electric cylinder 403 is driven with a driving block 402, the driving block 402 is connected with the inclined surface of the connection block 401, and the angle of the laser projector 4 is changed by the servo motor 403 through the cooperation of the driving block 402 and the connection block 401.
In this embodiment, the elastic member 404 is a spring, and the spring is in a compressed state, so that the bottom end of the laser projector 4 can have a movement tendency of swinging upward. Through the inclined plane connection, when the servo electric cylinder 403 stretches out, the connecting block 401 can be extruded through the driving block 402, the lower end of the laser projector 4 swings backwards, the stretching amount of the servo electric cylinder 403 can be controlled to control the angle A of the lower end of the laser projector 4 to swing backwards, and therefore shadows generated on the laser light receiver 5 after the wafer is irradiated by the laser projector 4 are prolonged, and the length of the circumference of the wafer perceived by the laser light receiver 5 is further increased.
Further, the through groove is provided in a direction in which the rotation bearing mount 303 faces between the laser projector 4 and the laser receiver 5.
By this position setting of the through groove, the pressure sensor 304 may be disposed in the direction in which the rotation bearing mount 303 faces between the laser projector 4 and the laser light receiver 5, that is, the pressure sensed by the pressure sensor 304 is a component of the centrifugal force in the direction between the laser projector 4 and the laser light receiver 5 when the wafer rotates, so that it is possible to directly determine the position of the portion where the wafer falls between the laser projector 4 and the laser light receiver 5 at this time.
The control method of the wafer edge inspection device based on the laser further comprises the following steps:
s1, driving a wafer to rotate through the rotating mechanism 2;
s2, in the process that the rotating mechanism 2 drives the wafer to rotate, the centrifugal force generated by the wafer to the pressure sensor 304 is detected by the centrifugal force detection mechanism 3, and the projection angle of the laser projector 4 is adjusted according to the centrifugal force.
The control method is described in the calculation principle.
Further, before the wafer is rotated by the rotation mechanism 2, the following steps are performed:
s0-1, placing the circle centers of the wafers at different positions on the negative pressure sucker cover 301, and measuring differences between actual positions and theoretical positions of the circumferences of the wafers at the different positions to obtain compensation amounts of all points of the circumferences of the wafers at the different positions;
for example, when a wafer is placed at the center of the negative pressure suction cup cover 301 at a position of 5mm, the edge of the wafer uniformly sags by 3mm, when the laser projector 4 irradiates vertically downwards, the diameter of the wafer perceived by the laser light receiver 5 is 60mm, and the actual diameter of the wafer is 62.5mm, and the compensation amount is 2.5mm/60mm.
S0-2, placing the circle centers of the wafers at different positions on the negative pressure sucker cover body 301, and measuring the centrifugal force of the wafers at different positions on the centrifugal force detection mechanism 3 and the orientation of the wafers at a fixed rotating speed to obtain the relationship between the maximum centrifugal force and the placing position of the wafers and the relationship between the centrifugal force and the orientation of the wafers;
for example, when a wafer is placed at the center of the negative pressure suction cup cover 301, the edge of the wafer uniformly sags by 3mm, when the wafer is placed at the negative pressure suction cup cover 301 deviated from the center by 5mm, the maximum sagging amount of the wafer is 5mm, and the minimum sagging amount is 2mm, then it can be considered that every time the wafer deviates from the center of the negative pressure suction cup cover 301 by 1mm, the maximum sagging increases (5 mm-3 mm)/5 mm, and the minimum sagging decreases (3 mm-2 mm)/5 mm.
Further, the centrifugal force at the time of wafer rotation is measured, for example, when a wafer is placed at the center of the negative pressure suction cup cover 301, the pressure of the wafer to the pressure sensor 304 is 0N, when the wafer is placed at the position of the negative pressure suction cup cover 301 deviated from the center of the circle by 5mm, the pressure of the wafer to the pressure sensor 304 is changed by 10N-0N, and it can be considered that each time the wafer deviates from the center of the negative pressure suction cup cover 301 by 1mm, the maximum pressure data of the pressure sensor 304 is increased by 10N/5mm, as the relationship between the maximum centrifugal force and the wafer placement position is obtained.
Meanwhile, it can be considered that the pressure of the pressure sensor 304 is uniformly changed along with the angle, that is, when the wafer is placed in the negative pressure suction cup cover 301 and deviates from the center of the circle by 5mm, the maximum pressure/pi of the wafer to the pressure sensor 304 is linearly changed, which is the relationship between the centrifugal force and the wafer orientation.
S0-3, swinging the laser projector 4 to obtain the change relation of the projection angle to the circumference of the wafer;
the change in the projection angle can be determined as follows: the projection angle B corresponding to the maximum compensation quantity has a change relation of B/pi linear change.
Adjusting the projection angle of the laser projector 4 according to the centrifugal force includes:
and in the process that the rotating mechanism 2 drives the wafer to rotate, the placing position of the wafer is obtained according to the relation between the maximum centrifugal force and the placing position of the wafer, the compensation quantity required by each point of the circumference of the wafer is obtained according to the placing position of the wafer, the position of the laser projector 4 irradiating the circumference of the wafer is calculated according to the relation between the centrifugal force and the direction of the wafer, and the projection angle of the laser projector is adjusted according to the change relation of the projection angle to the circumference of the wafer and the required compensation quantity.
According to the relationships, the required compensation quantity can be calculated, and then the projection angle of the laser projector is adjusted according to the compensation quantity.
Experimental data
Referring to fig. 11, after compensation, it can be seen that the compensated curve is wider at the shorter side and less in the longer side of the corresponding ellipse than the curve before compensation. The curve before compensation is fitted to a circle according to the least square method, the coordinate of the circle center is (0.452454, -2.43518), the radius is 62.18301mm, the curve after compensation is fitted to the circle according to the least square method, the coordinate of the circle center is (0.316208, -2.94095), and the radius is 62.51929mm. According to the circle center coordinates (0.32, -2.99) obtained by actual measurement, the radius is 62.53mm, and the compensated curve is more similar to the actual situation.
It should be noted that in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The invention may be implemented by means of hardware comprising several distinct elements, and by means of a suitably programmed computer. In the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware. The use of the words first, second, third, etc. do not denote any order. These words may be interpreted as names.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms should not be understood as necessarily being directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
Claims (9)
1. The utility model provides a wafer device of patrolling and tracing based on laser which characterized in that: comprising the following steps:
a work table;
the rotating mechanism comprises a negative pressure sucker and a rotating motor, the negative pressure sucker is arranged on the upper end face of the workbench in a protruding mode, the negative pressure sucker is driven by the rotating motor to rotate above the workbench, and the negative pressure sucker is connected to an external negative pressure source through the rotating motor;
the centrifugal force detection mechanism comprises a negative pressure sucker cover body, a rotating bearing, a bearing mounting seat and a pressure sensor, wherein the negative pressure sucker cover body is covered on the negative pressure sucker, the negative pressure sucker cover body can horizontally move on the upper end face of the negative pressure sucker, the inner ring of the rotating bearing is fixedly connected to the periphery of the negative pressure sucker cover body, the rotating bearing mounting seat is fixedly connected to the outer ring of the rotating bearing, the rotating bearing mounting seat is provided with a through groove, the pressure sensor is fixedly arranged in the through groove, and the detection end of the pressure sensor is abutted to the outer ring of the rotating bearing;
the laser projector is arranged above the circumference of the wafer on the workbench, the laser receiver is arranged below the laser projector, and the laser projector can swing;
and the control system is used for controlling the projection angle of the laser projector according to the data of the pressure sensor so as to prolong or shorten the shadow which is presented by the laser receiver after the projection laser emitted by the laser projector is shielded by the wafer, thereby correcting the edge measurement data of the laser receiver on the wafer.
2. The laser-based wafer edge inspection device of claim 1, wherein: the upper surface of the negative pressure sucker cover body is provided with a plurality of vent holes communicated to the negative pressure sucker.
3. The laser-based wafer edge inspection device of claim 1, wherein: the negative pressure sucker is higher than the outer ring of the rotating bearing.
4. The laser-based wafer edge inspection device of claim 1, wherein: the workbench is internally provided with a group of sliding rails along the front-back direction and a rotating mechanism driving device, the rotating mechanism is connected between the group of sliding rails, the upper end surface of the workbench is provided with a movable groove, and the rotating mechanism driving device drives the negative pressure sucker to move back and forth in the movable groove;
the workbench is provided with a plurality of threaded holes which are arranged side by side, and the rotary bearing mounting seat is locked and arranged on the workbench through the cooperation of a plurality of threaded holes and bolts.
5. The laser-based wafer edge inspection device of claim 1, wherein: the workbench is provided with a laser projector connecting plate at the upper end of the workbench, the middle position of the laser projector is hinged to the laser projector connecting plate, the bottom end of the laser projector is connected to the laser projector connecting plate through an elastic piece, and the top end of the laser projector is driven by a laser projector driving device, so that the laser projector swings around the middle position of the laser projector.
6. The laser-based wafer edge inspection apparatus of claim 5, wherein: the top orientation of laser light projector the one side of laser light projector connecting plate is fixed be provided with the connecting block, laser light projector drive arrangement including set up in the servo electronic jar on the top of laser light projector connecting plate, servo electronic jar drive has the drive piece, the drive piece with the connecting block inclined plane is connected, servo motor passes through the drive piece with the cooperation of connecting block changes laser light projector's angle.
7. The laser-based wafer edge inspection device of claim 1, wherein: the through groove is formed in the direction, facing the laser projector and the laser receiver, of the rotating bearing mounting seat.
8. A control method of a wafer edge inspection device based on laser is characterized by comprising the following steps: a laser-based wafer edge inspection apparatus according to any one of claims 1-7, comprising the steps of:
the wafer is driven to rotate through the rotating mechanism;
and in the process that the rotating mechanism drives the wafer to rotate, the centrifugal force generated by the wafer to the pressure sensor is detected through the centrifugal force detection mechanism, and the projection angle of the laser projector is adjusted according to the centrifugal force.
9. The method for controlling a laser-based wafer edge inspection device according to claim 8, wherein: before the wafer is driven to rotate by the rotating mechanism, the following steps are executed:
the circle centers of the wafers are placed at different positions on the negative pressure sucker cover body, the difference value between the actual positions and the theoretical positions of the circumferences of the wafers at the different positions is measured, and the compensation quantity of each point of the circumferences of the wafers at the different positions is obtained;
placing the circle centers of the wafers at different positions on the negative pressure sucker cover body, and measuring the centrifugal force of the wafers at different positions on the centrifugal force detection mechanism and the orientation of the wafers at a fixed rotating speed to obtain the relationship between the maximum centrifugal force and the placing position of the wafers and the relationship between the centrifugal force and the orientation of the wafers;
swinging the laser projector to obtain the change relation of the projection angle to the circumference of the wafer;
adjusting the projection angle of the laser projector according to the centrifugal force includes:
and in the process that the rotating mechanism drives the wafer to rotate, the placing position of the wafer is obtained according to the relation between the maximum centrifugal force and the placing position of the wafer, the compensation quantity required by each point of the circumference of the wafer is obtained according to the placing position of the wafer, the position of the laser projector irradiating the circumference of the wafer is calculated according to the relation between the centrifugal force and the direction of the wafer, and the projection angle of the laser projector is regulated according to the change relation of the projection angle to the circumference of the wafer and the required compensation quantity.
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| JPH04212436A (en) * | 1990-04-06 | 1992-08-04 | Nikon Corp | Position alignment equipment for circular substrate |
| CN204857695U (en) * | 2015-07-16 | 2015-12-09 | 上海微松工业自动化有限公司 | High -efficient wafer prealignment controlling means |
| CN213519910U (en) * | 2020-12-16 | 2021-06-22 | 福州大学 | Device for automatically positioning and calibrating wafer center |
| CN115692292A (en) * | 2022-11-18 | 2023-02-03 | 杭州富芯半导体有限公司 | Device and method for correcting wafer offset in wafer conveying process |
| CN220041825U (en) * | 2023-06-21 | 2023-11-17 | 泓浒(苏州)半导体科技有限公司 | Positioning and edge inspection device suitable for wafer |
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- 2024-01-05 CN CN202410019678.8A patent/CN117524963B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04212436A (en) * | 1990-04-06 | 1992-08-04 | Nikon Corp | Position alignment equipment for circular substrate |
| CN204857695U (en) * | 2015-07-16 | 2015-12-09 | 上海微松工业自动化有限公司 | High -efficient wafer prealignment controlling means |
| CN213519910U (en) * | 2020-12-16 | 2021-06-22 | 福州大学 | Device for automatically positioning and calibrating wafer center |
| CN115692292A (en) * | 2022-11-18 | 2023-02-03 | 杭州富芯半导体有限公司 | Device and method for correcting wafer offset in wafer conveying process |
| CN220041825U (en) * | 2023-06-21 | 2023-11-17 | 泓浒(苏州)半导体科技有限公司 | Positioning and edge inspection device suitable for wafer |
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