CN1174956A - 坩锅的固定方法及其采用的支承底座和支承底座组合设备 - Google Patents
坩锅的固定方法及其采用的支承底座和支承底座组合设备 Download PDFInfo
- Publication number
- CN1174956A CN1174956A CN97111421.8A CN97111421A CN1174956A CN 1174956 A CN1174956 A CN 1174956A CN 97111421 A CN97111421 A CN 97111421A CN 1174956 A CN1174956 A CN 1174956A
- Authority
- CN
- China
- Prior art keywords
- section
- support
- cydariform
- support plinth
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims description 10
- 230000008093 supporting effect Effects 0.000 claims description 5
- 239000013078 crystal Substances 0.000 abstract 1
- 238000009434 installation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
Claims (5)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12503196A JP3555326B2 (ja) | 1996-05-20 | 1996-05-20 | 単結晶引上装置の保持台へのルツボの組み付け方法と、その方法に用いられる保持台組み立て装置、および保持台 |
JP125031/96 | 1996-05-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1174956A true CN1174956A (zh) | 1998-03-04 |
CN1083077C CN1083077C (zh) | 2002-04-17 |
Family
ID=14900141
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN97111421A Expired - Fee Related CN1083077C (zh) | 1996-05-20 | 1997-05-20 | 坩锅的固定方法及其采用的支承底座和支承底座组装设备 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5897706A (zh) |
JP (1) | JP3555326B2 (zh) |
KR (1) | KR100487450B1 (zh) |
CN (1) | CN1083077C (zh) |
DE (1) | DE19717380B4 (zh) |
TW (1) | TW374806B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1308500C (zh) * | 2002-02-25 | 2007-04-04 | 中国科学院福建物质结构研究所 | 一种提拉法晶体生长的坩埚安置法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006308267A (ja) * | 2005-05-02 | 2006-11-09 | Iis Materials:Kk | るつぼ装置及びそれを用いた溶融材料の凝固方法 |
KR101392939B1 (ko) | 2012-09-03 | 2014-05-08 | 디케이아즈텍 주식회사 | 사파이어 결정성장기 |
DE102012109248A1 (de) * | 2012-09-28 | 2014-04-03 | Fluxana GmbH & Co. KG | Herstellung von Analyseproben |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN87203863U (zh) * | 1987-03-23 | 1988-05-18 | 宁夏有色金属冶炼厂 | 氧化物粉末焙烧装置 |
JPH03228892A (ja) * | 1990-01-31 | 1991-10-09 | Japan Silicon Co Ltd | 半導体製造装置 |
CN2100572U (zh) * | 1991-05-14 | 1992-04-01 | 荣成市机械一厂 | 可坐火锅和饭锅的电炊具 |
DE9111315U1 (de) * | 1991-09-12 | 1991-11-07 | SGL CARBON AG, 65203 Wiesbaden | Mehrteiliger Stütztiegel |
JPH0572971U (ja) * | 1992-03-11 | 1993-10-05 | コマツ電子金属株式会社 | 石英るつぼ組み込み装置 |
-
1996
- 1996-05-20 JP JP12503196A patent/JP3555326B2/ja not_active Expired - Fee Related
-
1997
- 1997-04-08 TW TW086104392A patent/TW374806B/zh not_active IP Right Cessation
- 1997-04-15 US US08/834,293 patent/US5897706A/en not_active Expired - Lifetime
- 1997-04-24 DE DE19717380A patent/DE19717380B4/de not_active Expired - Fee Related
- 1997-05-19 KR KR1019970019284A patent/KR100487450B1/ko not_active IP Right Cessation
- 1997-05-20 CN CN97111421A patent/CN1083077C/zh not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1308500C (zh) * | 2002-02-25 | 2007-04-04 | 中国科学院福建物质结构研究所 | 一种提拉法晶体生长的坩埚安置法 |
Also Published As
Publication number | Publication date |
---|---|
TW374806B (en) | 1999-11-21 |
JPH09309788A (ja) | 1997-12-02 |
DE19717380B4 (de) | 2008-06-26 |
JP3555326B2 (ja) | 2004-08-18 |
DE19717380A1 (de) | 1997-11-27 |
US5897706A (en) | 1999-04-27 |
KR970074986A (ko) | 1997-12-10 |
CN1083077C (zh) | 2002-04-17 |
KR100487450B1 (ko) | 2005-08-05 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Free format text: FORMER OWNER: MITSUBISHI MATERIALS CORP. |
|
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee |
Owner name: SUMCO CORP. Free format text: FORMER NAME: MITSUBISHI MATERIALS SILICON CORP. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Co-patentee after: Mitsubishi Materials Corp. Patentee after: SUMCO Corp. Address before: Tokyo, Japan Co-patentee before: Mitsubishi Materials Corp. Patentee before: SUMITOMO MITSUBISHI SILICON Corp. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20111031 Address after: Tokyo, Japan Patentee after: SUMCO Corp. Address before: Tokyo, Japan Co-patentee before: Mitsubishi Materials Corp. Patentee before: Sumco Corp. Effective date of registration: 20111031 Address after: Tokyo, Japan Co-patentee after: Mitsubishi Materials Corp. Patentee after: SUMITOMO MITSUBISHI SILICON Corp. Address before: Tokyo, Japan Co-patentee before: Mitsubishi Materials Corp. Patentee before: Sumitomo Mitsubishi Silicon Corp. |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20020417 Termination date: 20140520 |