TW374806B - Method for crucible attachment to support base of single crystal pulling apparatus and support base assembly apparatus and support base employed therein - Google Patents
Method for crucible attachment to support base of single crystal pulling apparatus and support base assembly apparatus and support base employed thereinInfo
- Publication number
- TW374806B TW374806B TW086104392A TW86104392A TW374806B TW 374806 B TW374806 B TW 374806B TW 086104392 A TW086104392 A TW 086104392A TW 86104392 A TW86104392 A TW 86104392A TW 374806 B TW374806 B TW 374806B
- Authority
- TW
- Taiwan
- Prior art keywords
- support base
- single crystal
- crystal pulling
- crucible
- employed
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title abstract 2
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12503196A JP3555326B2 (ja) | 1996-05-20 | 1996-05-20 | 単結晶引上装置の保持台へのルツボの組み付け方法と、その方法に用いられる保持台組み立て装置、および保持台 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW374806B true TW374806B (en) | 1999-11-21 |
Family
ID=14900141
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086104392A TW374806B (en) | 1996-05-20 | 1997-04-08 | Method for crucible attachment to support base of single crystal pulling apparatus and support base assembly apparatus and support base employed therein |
Country Status (6)
Country | Link |
---|---|
US (1) | US5897706A (zh) |
JP (1) | JP3555326B2 (zh) |
KR (1) | KR100487450B1 (zh) |
CN (1) | CN1083077C (zh) |
DE (1) | DE19717380B4 (zh) |
TW (1) | TW374806B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1308500C (zh) * | 2002-02-25 | 2007-04-04 | 中国科学院福建物质结构研究所 | 一种提拉法晶体生长的坩埚安置法 |
JP2006308267A (ja) * | 2005-05-02 | 2006-11-09 | Iis Materials:Kk | るつぼ装置及びそれを用いた溶融材料の凝固方法 |
KR101392939B1 (ko) | 2012-09-03 | 2014-05-08 | 디케이아즈텍 주식회사 | 사파이어 결정성장기 |
DE102012109248A1 (de) * | 2012-09-28 | 2014-04-03 | Fluxana GmbH & Co. KG | Herstellung von Analyseproben |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN87203863U (zh) * | 1987-03-23 | 1988-05-18 | 宁夏有色金属冶炼厂 | 氧化物粉末焙烧装置 |
JPH03228892A (ja) * | 1990-01-31 | 1991-10-09 | Japan Silicon Co Ltd | 半導体製造装置 |
CN2100572U (zh) * | 1991-05-14 | 1992-04-01 | 荣成市机械一厂 | 可坐火锅和饭锅的电炊具 |
DE9111315U1 (de) * | 1991-09-12 | 1991-11-07 | SGL CARBON AG, 65203 Wiesbaden | Mehrteiliger Stütztiegel |
JPH0572971U (ja) * | 1992-03-11 | 1993-10-05 | コマツ電子金属株式会社 | 石英るつぼ組み込み装置 |
-
1996
- 1996-05-20 JP JP12503196A patent/JP3555326B2/ja not_active Expired - Fee Related
-
1997
- 1997-04-08 TW TW086104392A patent/TW374806B/zh not_active IP Right Cessation
- 1997-04-15 US US08/834,293 patent/US5897706A/en not_active Expired - Lifetime
- 1997-04-24 DE DE19717380A patent/DE19717380B4/de not_active Expired - Fee Related
- 1997-05-19 KR KR1019970019284A patent/KR100487450B1/ko not_active IP Right Cessation
- 1997-05-20 CN CN97111421A patent/CN1083077C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100487450B1 (ko) | 2005-08-05 |
DE19717380A1 (de) | 1997-11-27 |
CN1174956A (zh) | 1998-03-04 |
KR970074986A (ko) | 1997-12-10 |
DE19717380B4 (de) | 2008-06-26 |
US5897706A (en) | 1999-04-27 |
CN1083077C (zh) | 2002-04-17 |
JP3555326B2 (ja) | 2004-08-18 |
JPH09309788A (ja) | 1997-12-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |