TW374806B - Method for crucible attachment to support base of single crystal pulling apparatus and support base assembly apparatus and support base employed therein - Google Patents

Method for crucible attachment to support base of single crystal pulling apparatus and support base assembly apparatus and support base employed therein

Info

Publication number
TW374806B
TW374806B TW086104392A TW86104392A TW374806B TW 374806 B TW374806 B TW 374806B TW 086104392 A TW086104392 A TW 086104392A TW 86104392 A TW86104392 A TW 86104392A TW 374806 B TW374806 B TW 374806B
Authority
TW
Taiwan
Prior art keywords
support base
single crystal
crystal pulling
crucible
employed
Prior art date
Application number
TW086104392A
Other languages
English (en)
Inventor
Masakazu Yamazaki
Michio Yanaba
Hiroaki Taguchi
Takasi Atami
Hisashi Furuya
Original Assignee
Mitsubishi Material Silicon
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Material Silicon, Mitsubishi Materials Corp filed Critical Mitsubishi Material Silicon
Application granted granted Critical
Publication of TW374806B publication Critical patent/TW374806B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
TW086104392A 1996-05-20 1997-04-08 Method for crucible attachment to support base of single crystal pulling apparatus and support base assembly apparatus and support base employed therein TW374806B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12503196A JP3555326B2 (ja) 1996-05-20 1996-05-20 単結晶引上装置の保持台へのルツボの組み付け方法と、その方法に用いられる保持台組み立て装置、および保持台

Publications (1)

Publication Number Publication Date
TW374806B true TW374806B (en) 1999-11-21

Family

ID=14900141

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086104392A TW374806B (en) 1996-05-20 1997-04-08 Method for crucible attachment to support base of single crystal pulling apparatus and support base assembly apparatus and support base employed therein

Country Status (6)

Country Link
US (1) US5897706A (zh)
JP (1) JP3555326B2 (zh)
KR (1) KR100487450B1 (zh)
CN (1) CN1083077C (zh)
DE (1) DE19717380B4 (zh)
TW (1) TW374806B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1308500C (zh) * 2002-02-25 2007-04-04 中国科学院福建物质结构研究所 一种提拉法晶体生长的坩埚安置法
JP2006308267A (ja) * 2005-05-02 2006-11-09 Iis Materials:Kk るつぼ装置及びそれを用いた溶融材料の凝固方法
KR101392939B1 (ko) 2012-09-03 2014-05-08 디케이아즈텍 주식회사 사파이어 결정성장기
DE102012109248A1 (de) * 2012-09-28 2014-04-03 Fluxana GmbH & Co. KG Herstellung von Analyseproben

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN87203863U (zh) * 1987-03-23 1988-05-18 宁夏有色金属冶炼厂 氧化物粉末焙烧装置
JPH03228892A (ja) * 1990-01-31 1991-10-09 Japan Silicon Co Ltd 半導体製造装置
CN2100572U (zh) * 1991-05-14 1992-04-01 荣成市机械一厂 可坐火锅和饭锅的电炊具
DE9111315U1 (de) * 1991-09-12 1991-11-07 SGL CARBON AG, 65203 Wiesbaden Mehrteiliger Stütztiegel
JPH0572971U (ja) * 1992-03-11 1993-10-05 コマツ電子金属株式会社 石英るつぼ組み込み装置

Also Published As

Publication number Publication date
KR100487450B1 (ko) 2005-08-05
DE19717380A1 (de) 1997-11-27
CN1174956A (zh) 1998-03-04
KR970074986A (ko) 1997-12-10
DE19717380B4 (de) 2008-06-26
US5897706A (en) 1999-04-27
CN1083077C (zh) 2002-04-17
JP3555326B2 (ja) 2004-08-18
JPH09309788A (ja) 1997-12-02

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees