CN1172382C - 磁电转换元件及其制造方法 - Google Patents
磁电转换元件及其制造方法 Download PDFInfo
- Publication number
- CN1172382C CN1172382C CNB018008410A CN01800841A CN1172382C CN 1172382 C CN1172382 C CN 1172382C CN B018008410 A CNB018008410 A CN B018008410A CN 01800841 A CN01800841 A CN 01800841A CN 1172382 C CN1172382 C CN 1172382C
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- aforementioned
- conductive layer
- magnetoelectric conversion
- conversion element
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
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- 238000003475 lamination Methods 0.000 description 3
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
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- 229910052787 antimony Inorganic materials 0.000 description 2
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- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
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- 239000004332 silver Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
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- 239000004952 Polyamide Substances 0.000 description 1
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
Claims (25)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP105450/00 | 2000-04-06 | ||
JP105450/2000 | 2000-04-06 | ||
JP2000105450 | 2000-04-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1366716A CN1366716A (zh) | 2002-08-28 |
CN1172382C true CN1172382C (zh) | 2004-10-20 |
Family
ID=18618797
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB018008410A Expired - Fee Related CN1172382C (zh) | 2000-04-06 | 2001-04-05 | 磁电转换元件及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6724059B2 (zh) |
JP (1) | JP4846955B2 (zh) |
KR (1) | KR100459361B1 (zh) |
CN (1) | CN1172382C (zh) |
WO (1) | WO2001078161A1 (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4685356B2 (ja) * | 2002-04-19 | 2011-05-18 | 旭化成エレクトロニクス株式会社 | 磁電変換素子及びその製造方法 |
EP1598876A4 (en) * | 2003-02-26 | 2008-04-30 | Asahi Kasei Denshi Kk | SEMICONDUCTOR DETECTOR AND METHOD FOR PRODUCING SAME |
JP2007506274A (ja) * | 2003-09-16 | 2007-03-15 | コニンクリユケ フィリップス エレクトロニクス エヌ.ブイ. | 電子デバイスを製造する方法および電子デバイス |
JP2014192241A (ja) * | 2013-03-26 | 2014-10-06 | Asahi Kasei Electronics Co Ltd | 磁気センサ及びその製造方法 |
JP6774899B2 (ja) * | 2017-03-23 | 2020-10-28 | 旭化成エレクトロニクス株式会社 | ホール素子及びホール素子の製造方法 |
JP7136137B2 (ja) * | 2020-01-29 | 2022-09-13 | Tdk株式会社 | 磁気センサ、磁気検出装置及び磁気検出システム |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4978938A (en) * | 1988-12-23 | 1990-12-18 | General Motors Corporation | Magnetoresistor |
JPH0435076A (ja) * | 1990-05-31 | 1992-02-05 | F M C:Kk | 磁気抵抗素子及びその製造方法 |
JPH0521860A (ja) * | 1991-07-15 | 1993-01-29 | Sankyo Seiki Mfg Co Ltd | 磁気センサ |
JPH05304325A (ja) * | 1992-04-27 | 1993-11-16 | Matsushita Electric Ind Co Ltd | 半導体薄膜磁気抵抗素子およびその製造方法 |
JPH08274385A (ja) * | 1995-03-30 | 1996-10-18 | Showa Denko Kk | 磁電変換素子 |
JP3411143B2 (ja) * | 1995-12-28 | 2003-05-26 | 京セラ株式会社 | メタライズ組成物及びそれを用いた配線基板 |
JP3684658B2 (ja) * | 1996-03-25 | 2005-08-17 | 松下電器産業株式会社 | 磁気抵抗素子およびその製造方法 |
JPH10227845A (ja) * | 1997-02-14 | 1998-08-25 | Matsushita Electric Ind Co Ltd | チップ形磁気センサ素子及びその製造方法 |
JP2000012919A (ja) * | 1998-06-24 | 2000-01-14 | Asahi Kasei Denshi Kk | 磁電変換素子とその製造方法 |
JP4542215B2 (ja) * | 1998-08-31 | 2010-09-08 | 旭化成エレクトロニクス株式会社 | ホール素子の製造方法 |
JP4573368B2 (ja) * | 1998-09-25 | 2010-11-04 | 旭化成エレクトロニクス株式会社 | フェースダウン接続用小型磁電変換素子の製造方法 |
-
2001
- 2001-04-05 KR KR10-2001-7015657A patent/KR100459361B1/ko not_active IP Right Cessation
- 2001-04-05 CN CNB018008410A patent/CN1172382C/zh not_active Expired - Fee Related
- 2001-04-05 WO PCT/JP2001/002962 patent/WO2001078161A1/ja active IP Right Grant
- 2001-04-05 JP JP2001574916A patent/JP4846955B2/ja not_active Expired - Fee Related
- 2001-04-05 US US09/980,873 patent/US6724059B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
WO2001078161A1 (fr) | 2001-10-18 |
KR20020026871A (ko) | 2002-04-12 |
US20020160548A1 (en) | 2002-10-31 |
JP4846955B2 (ja) | 2011-12-28 |
KR100459361B1 (ko) | 2004-12-04 |
CN1366716A (zh) | 2002-08-28 |
US6724059B2 (en) | 2004-04-20 |
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Legal Events
Date | Code | Title | Description |
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C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: ASAHI KASEI EMD CORP. Free format text: FORMER OWNER: ASAHI KASEI ELECTRONICS CO. LTD. Effective date: 20071130 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20071130 Address after: Tokyo, Japan, Japan Patentee after: Asahi Chemical Ind Address before: Tokyo, Japan Patentee before: Asahi Kasei Electronics Co., Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20041020 Termination date: 20180405 |