CN116959979B - 耐高温的gpp芯片的生产工艺 - Google Patents
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Abstract
本发明涉及二极管芯片制造技术领域，尤其是涉及一种耐高温GPP芯片的生产工艺，步骤包括一次光刻：腐蚀开槽：SIPOS：二次光刻：电泳钝化：LTO；三次光刻以及表面金属化，划片切割。本发明的工序结合了光阻法和电泳法的优势，相比现有技术的全部钝化然后再根据需要裁切，本发明的工艺中玻璃层是根据需要人为排序然后进行生长钝化的，一方面钝化过程中没有其他杂质，玻璃内部不会产气泡和黑渣点，另一方面玻璃粉融化固化后是致密的，硬特性和耐高温特性都大大提高，有效保证GPP芯片的可靠性。
Description
技术领域
本发明涉及二极管芯片制造技术领域，尤其是涉及一种耐高温的GPP芯片的生产工艺。
背景技术
GPP(玻璃钝化)芯片是目前高新技术的主流。GPP工艺分为三种工艺实现方法：①刀刮法②光阻法③电泳法，然而这三种方法均有优缺点，其中现有技术中最常用的光阻法是将玻璃粉和光刻胶搅拌后填充在槽里，在钝化炉里钝化时，燃烧掉光刻胶，留下玻璃粉融化成玻璃。但实际生产中烧胶升华时，光刻胶燃烧的不明气体和渣会遗留在玻璃内部，可视物为气泡和黑渣点，会影响产品的硬特性和高温可靠性。
发明内容
针对上述问题，本发明的目的是提供一种体积小生产成本低的。
为了解决上述技术问题，本发明采用的技术方案如下：一种耐高温GPP芯片的生产工艺，步骤如下：
S1：一次光刻：在晶圆基片需要开窗口的P面匀上光刻负胶，用光刻机按需要的图形尺寸进行光刻曝光，最后把光刻后需要开槽的部位显影去除掉光刻负胶；
S2：腐蚀开槽：用混合强酸把上工序的基片，需要开槽的部位腐蚀到目标深度120mm～160mm，即超过硼结深30～40mm；
S3：SIPOS：在基片的开窗口面进行沉积，生长一层含氧多晶硅半绝缘多晶硅氧化层；
S4：二次光刻：在SIPOS整个面上匀好光刻负胶，光刻时利用光刻板图形，把台面边缘需要包角部位、沟槽里的侧面部位及沟槽底角PN结附近部位的光刻胶刻完显影掉；
S5：电泳钝化：在S4中开槽面去除光刻胶的部位利用电泳电场自动生长一层厚度为20mm～30mm的受控的玻璃层，且有光刻胶的部位不会生长玻璃层；然后用扩散炉高温处理，玻璃层融化致密，其余光刻胶层在高温下分解；
S6：LTO:利用特殊气体，在低温状态下使硅片表面生长一层二氧化硅薄膜，特殊气体为硅烷和氧气的混合气体；
S7：三次光刻：把无玻璃区域的SIPOS层，LTO层等去除掉，便于后续表面金属化和划片；
S8：表面金属化，划片切割。
在上述技术方案中，S2中的混合强酸的主要成分为氢氟酸硝酸、冰乙酸、硫酸，配比为9：9：12：5。
在上述技术方案中，S6中的特殊气体中硅烷和氧气的比例为50SCCM：90SCCM。
在上述技术方案中，S5中扩散炉钝化玻璃层的最佳温度为817℃。
在上述技术方案中，S6中的硅片表面生长二氧化硅薄膜的最佳温度为420℃。
综上所述，采用本发明的技术方案相较于传统技术手段具有的有益效果是：本发明的工序结合了光阻法和电泳法的优势，相比现有技术的全部钝化然后再根据需要裁切，本发明的工艺中玻璃层是根据需要人为排序然后进行生长钝化的，一方面钝化过程中没有其他杂质，玻璃内部不会产气泡和黑渣点，另一方面玻璃粉融化固化后是致密的，硬特性和耐高温特性都大大提高，有效保证GPP芯片的可靠性。
附图说明
通过下面结合附图的详细描述，本发明前述的和其他的目的、特征和优点将变得显而易见。
图1为本发明的流程图；
图2为待加工产品的示意图；
图3为S1一次光刻并腐蚀开槽后产品的示意图；
图4为S3中产品生长一层半绝缘多晶硅氧化层示意图；
图5为S4中特殊位置处光刻胶刻完显影后的示意图；
图6为S5中去除光刻胶的部位生长玻璃的示意图；
图7为S6中产品表面生长一层二样化硅薄膜的示意图；
图8为S7中去除掉无玻璃区域SIPOS层，LTO层的示意图；
图9为本发明生产出的GPP芯片的测试数据表。
具体实施方式
以下依据本发明的理想实施例为启示，通过以下的说明内容，相关工作人员完全可以在不偏离本项发明技术思想的范围内，进行多样的变更以及修改。本项发明的技术性范围并不局限于说明书上的内容，必须要根据权利要求范围来确定其技术性范围。
参考下列附图，对本发明进行进一步地说明：
如图1～9所示，一种耐高温GPP芯片的生产工艺，步骤如下：
S1：一次光刻：在晶圆基片需要开窗口的P面匀上光刻负胶，用光刻机按需要的图形尺寸进行光刻曝光，最后把光刻后需要开槽的部位显影去除掉光刻负胶；这样便于S2工序中腐蚀，不需要开窗腐蚀的部位用光刻胶挡住，需要开窗腐蚀的部位无光刻胶可自由腐蚀。
S2：腐蚀开槽：用混合强酸把上工序的基片，需要开槽的部位腐蚀到目标深度120mm～160mm，即超过硼结深30～40mm；硼面腐蚀的腐蚀深度控制在超过硼结深30-40微米，为后工序的产品电性体现提供保障。
S3：SIPOS：在基片的开窗口面进行沉积，生长一层含氧多晶硅半绝缘多晶硅氧化层；SIPOS作为一种钝化工艺，沉积层有很好的保护PN结的作用，对高温度，高湿度，强电场的稳定性和可靠性有很好的保护作用；但是此沉积层厚度薄，厚度小于1mm，承受物理摩擦能力较差，所以需要后续其他钝化工艺来保护。
S4：二次光刻：在SIPOS整个面上匀好光刻负胶，光刻时利用光刻板图形，把台面边缘需要包角部位、沟槽里的侧面部位及沟槽底角PN结附近部位的光刻胶刻完显影掉；上述部位直接影响产品的电性，后续需要在这些部位上通过电泳填充玻璃；沟槽底部部位遗留下最后是划片切割的留槽部位，台面部位也不用玻璃保护，是需要去除SIPOS，然后进行金属化便于焊接；
S5：电泳钝化：在S4中开槽面去除光刻胶的部位利用电泳电场自动生长一层厚度为20mm～30mm的受控的玻璃层，且有光刻胶的部位不会生长玻璃层；然后用扩散炉高温处理，玻璃层融化致密，其余光刻胶层在高温下分解 ，在台面边缘需要包角部位、沟槽内侧面部位及沟槽底角PN结附近部位生长玻璃钝化保护好硅片及SIPOS层；
S6：LTO:利用特殊气体，在低温状态下使硅片表面生长一层二氧化硅薄膜，特殊气体为硅烷和氧气的混合气体。
S7：三次光刻：把无玻璃区域的SIPOS层，LTO层等去除掉，便于后续表面金属化和划片；
S8：表面金属化，划片切割。
S2中的混合强酸的主要成分为氢氟酸硝酸、冰乙酸、硫酸，配比为9：9：12：5。
S6中的特殊气体中硅烷和氧气的比例为50SCCM：90SCCM。
S5中扩散炉钝化玻璃层的最佳温度为817℃。
S6中的硅片表面生长二氧化硅薄膜的最佳温度为420℃。
以上所述仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
Claims (5)
1.一种耐高温GPP芯片的生产工艺，其特征在于：步骤如下：
S1：一次光刻：在晶圆基片需要开窗口的P面匀上光刻负胶，用光刻机按需要的图形尺寸进行光刻曝光，最后把光刻后需要开槽的部位显影去除掉光刻负胶；
S2：腐蚀开槽：用混合强酸把上工序的基片，需要开槽的部位腐蚀到目标深度120mm～160mm，即超过硼结深30～40mm；
S3：SIPOS：在基片的开窗口面进行沉积，生长一层含氧多晶硅半绝缘多晶硅氧化层；
S4：二次光刻：在SIPOS整个面上匀好光刻负胶，光刻时利用光刻板图形，把台面边缘需要包角部位、沟槽里的侧面部位及沟槽底角PN结附近部位的光刻胶刻完显影掉；
S5：电泳钝化：在S4中开槽面去除光刻胶的部位利用电泳电场自动生长一层厚度为20mm～30mm的受控的玻璃层，且有光刻胶的部位不会生长玻璃层，然后用扩散炉高温处理，玻璃层融化致密，其余光刻胶层在高温下分解；
S6：LTO:利用特殊气体，在低温状态下使硅片表面生长一层二氧化硅薄膜，特殊气体为硅烷和氧气的混合气体；
S7：三次光刻：把无玻璃区域的SIPOS层，LTO层去除掉，便于后续表面金属化和划片；
S8：表面金属化，划片切割。
2.根据权利要求1所述的耐高温GPP芯片的生产工艺，其特征在于：S2中的混合强酸的主要成分为氢氟酸、硝酸、冰乙酸、硫酸，配比为9：9：12：5。
3.根据权利要求1所述的耐高温GPP芯片的生产工艺，其特征在于：S6中的特殊气体中硅烷和氧气比例为50SCCM：90SCCM。
4.根据权利要求1所述的耐高温GPP芯片的生产工艺，其特征在于：S5中扩散炉钝化玻璃层的最佳温度为817℃。
5.根据权利要求1所述的耐高温GPP芯片的生产工艺，其特征在于：S6中的硅片表面生长二氧化硅薄膜的最佳温度为420℃。
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Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102082093A (zh) * | 2010-12-10 | 2011-06-01 | 天津中环半导体股份有限公司 | 一种双向稳压二极管db3芯片及其生产工艺 |
| CN102496619A (zh) * | 2011-12-26 | 2012-06-13 | 天津环联电子科技有限公司 | 一种发光二极管的保护器件芯片及生产工艺 |
| CN103858213A (zh) * | 2012-05-08 | 2014-06-11 | 新电元工业株式会社 | 半导体接合保护用玻璃复合物、半导体装置的制造方法以及半导体装置 |
| CN107316812A (zh) * | 2017-06-09 | 2017-11-03 | 安徽钜芯半导体科技有限公司 | 一种高温特性的半导体芯片加工工艺 |
| CN109309001A (zh) * | 2017-07-26 | 2019-02-05 | 天津环鑫科技发展有限公司 | 一种采用印刷工艺制作gpp芯片的方法 |
| CN109755209A (zh) * | 2019-01-11 | 2019-05-14 | 常州星海电子股份有限公司 | 一种高可靠光阻玻璃钝化芯片及其加工方法 |
| CN111370301A (zh) * | 2020-03-19 | 2020-07-03 | 常州星海电子股份有限公司 | 超大功率光阻玻璃芯片生产工艺 |
| CN111584363A (zh) * | 2020-05-28 | 2020-08-25 | 山东芯诺电子科技股份有限公司 | 用于旋转整流的圆形玻璃钝化二极管整流芯片及生产工艺 |
| CN212209498U (zh) * | 2020-06-30 | 2020-12-22 | 上海瞬雷科技有限公司 | Gpp单向瞬间电压抑制二极管芯片 |
| CN113611607A (zh) * | 2021-08-26 | 2021-11-05 | 山东晶导微电子股份有限公司 | 半导体分立器件快恢复芯片的电泳工艺制造方法 |
| CN113745173A (zh) * | 2021-09-14 | 2021-12-03 | 济南市半导体元件实验所 | 复合钝化膜结构的光阻gpp芯片、制备方法及电子器件 |
| CN115241060A (zh) * | 2022-06-30 | 2022-10-25 | 常州银河电器有限公司 | 一种新型高压玻璃保护芯片制程工艺 |
| CN115881532A (zh) * | 2022-11-28 | 2023-03-31 | 常州银河世纪微电子股份有限公司 | 一种平面芯片的钝化方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10186425B2 (en) * | 2014-10-31 | 2019-01-22 | Shindengen Electric Manufacturing Co., Ltd. | Method of manufacturing semiconductor device and resist glass |
-
2023
- 2023-07-14 CN CN202310866902.2A patent/CN116959979B/zh active Active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102082093A (zh) * | 2010-12-10 | 2011-06-01 | 天津中环半导体股份有限公司 | 一种双向稳压二极管db3芯片及其生产工艺 |
| CN102496619A (zh) * | 2011-12-26 | 2012-06-13 | 天津环联电子科技有限公司 | 一种发光二极管的保护器件芯片及生产工艺 |
| CN103858213A (zh) * | 2012-05-08 | 2014-06-11 | 新电元工业株式会社 | 半导体接合保护用玻璃复合物、半导体装置的制造方法以及半导体装置 |
| CN107316812A (zh) * | 2017-06-09 | 2017-11-03 | 安徽钜芯半导体科技有限公司 | 一种高温特性的半导体芯片加工工艺 |
| CN109309001A (zh) * | 2017-07-26 | 2019-02-05 | 天津环鑫科技发展有限公司 | 一种采用印刷工艺制作gpp芯片的方法 |
| CN109755209A (zh) * | 2019-01-11 | 2019-05-14 | 常州星海电子股份有限公司 | 一种高可靠光阻玻璃钝化芯片及其加工方法 |
| CN111370301A (zh) * | 2020-03-19 | 2020-07-03 | 常州星海电子股份有限公司 | 超大功率光阻玻璃芯片生产工艺 |
| CN111584363A (zh) * | 2020-05-28 | 2020-08-25 | 山东芯诺电子科技股份有限公司 | 用于旋转整流的圆形玻璃钝化二极管整流芯片及生产工艺 |
| CN212209498U (zh) * | 2020-06-30 | 2020-12-22 | 上海瞬雷科技有限公司 | Gpp单向瞬间电压抑制二极管芯片 |
| CN113611607A (zh) * | 2021-08-26 | 2021-11-05 | 山东晶导微电子股份有限公司 | 半导体分立器件快恢复芯片的电泳工艺制造方法 |
| CN113745173A (zh) * | 2021-09-14 | 2021-12-03 | 济南市半导体元件实验所 | 复合钝化膜结构的光阻gpp芯片、制备方法及电子器件 |
| CN115241060A (zh) * | 2022-06-30 | 2022-10-25 | 常州银河电器有限公司 | 一种新型高压玻璃保护芯片制程工艺 |
| CN115881532A (zh) * | 2022-11-28 | 2023-03-31 | 常州银河世纪微电子股份有限公司 | 一种平面芯片的钝化方法 |
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