CN116941016A - 半导体基板和其制造方法以及制造装置、模板基板 - Google Patents

半导体基板和其制造方法以及制造装置、模板基板 Download PDF

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Publication number
CN116941016A
CN116941016A CN202280016192.8A CN202280016192A CN116941016A CN 116941016 A CN116941016 A CN 116941016A CN 202280016192 A CN202280016192 A CN 202280016192A CN 116941016 A CN116941016 A CN 116941016A
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semiconductor
support substrate
mask
semiconductor substrate
substrate
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Chinese (zh)
Inventor
正木克明
神川刚
小林敏洋
林雄一郎
青木优太
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Kyocera Corp
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Kyocera Corp
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    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
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    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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  • Chemical & Material Sciences (AREA)
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  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN202280016192.8A 2021-02-26 2022-02-24 半导体基板和其制造方法以及制造装置、模板基板 Pending CN116941016A (zh)

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JP2021-031036 2021-02-26
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PCT/JP2022/007587 WO2022181686A1 (ja) 2021-02-26 2022-02-24 半導体基板並びにその製造方法および製造装置、テンプレート基板

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US (1) US20240234141A9 (https=)
EP (1) EP4300605A4 (https=)
JP (1) JP7646806B2 (https=)
KR (2) KR102869418B1 (https=)
CN (1) CN116941016A (https=)
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US12463033B2 (en) 2022-10-19 2025-11-04 Kyocera Corporation Semiconductor substrate, and manufacturing method and manufacturing apparatus of semiconductor substrate
WO2024084634A1 (ja) * 2022-10-19 2024-04-25 京セラ株式会社 半導体基板、半導体基板の製造方法および製造装置
WO2024084664A1 (ja) * 2022-10-20 2024-04-25 京セラ株式会社 半導体基板、テンプレート基板、並びにテンプレート基板の製造方法および製造装置
WO2024201629A1 (ja) * 2023-03-27 2024-10-03 京セラ株式会社 半導体成長用テンプレート基板、半導体基板、半導体成長用テンプレート基板の製造方法および製造装置、並びに半導体基板の製造方法および製造装置
TW202528574A (zh) * 2023-09-22 2025-07-16 日商京瓷股份有限公司 模片基板及其製造方法、半導體基板及其製造方法、模片基板之製造裝置以及半導體裝置之製造方法
WO2025115743A1 (ja) * 2023-11-30 2025-06-05 京セラ株式会社 半導体基板並びにその製造方法および製造装置、半導体デバイス
WO2025115999A1 (ja) * 2023-12-01 2025-06-05 京セラ株式会社 半導体基板およびその製造方法、半導体基板の製造装置、並びに半導体デバイス
TW202537182A (zh) * 2023-12-11 2025-09-16 日商京瓷股份有限公司 半導體基板以及其製造方法及製造裝置、半導體器件

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