CN1169268C - 光学半导体器件的制造方法 - Google Patents
光学半导体器件的制造方法 Download PDFInfo
- Publication number
- CN1169268C CN1169268C CNB981200516A CN98120051A CN1169268C CN 1169268 C CN1169268 C CN 1169268C CN B981200516 A CNB981200516 A CN B981200516A CN 98120051 A CN98120051 A CN 98120051A CN 1169268 C CN1169268 C CN 1169268C
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 230000003287 optical effect Effects 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000000927 vapour-phase epitaxy Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 24
- 238000013508 migration Methods 0.000 claims description 11
- 230000005012 migration Effects 0.000 claims description 11
- 239000000835 fiber Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 3
- 230000012010 growth Effects 0.000 description 67
- 230000003595 spectral effect Effects 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 3
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003698 anagen phase Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/04—MOCVD or MOVPE
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2272—Buried mesa structure ; Striped active layer grown by a mask induced selective growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
- H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9266645A JP3045115B2 (ja) | 1997-09-30 | 1997-09-30 | 光半導体装置の製造方法 |
JP266645/1997 | 1997-09-30 | ||
JP266645/97 | 1997-09-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1213197A CN1213197A (zh) | 1999-04-07 |
CN1169268C true CN1169268C (zh) | 2004-09-29 |
Family
ID=17433716
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB981200516A Expired - Fee Related CN1169268C (zh) | 1997-09-30 | 1998-09-28 | 光学半导体器件的制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6036771A (zh) |
EP (1) | EP0905798A3 (zh) |
JP (1) | JP3045115B2 (zh) |
KR (1) | KR100305301B1 (zh) |
CN (1) | CN1169268C (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6228670B1 (en) * | 1998-04-23 | 2001-05-08 | Nec Corporation | Method of manufacturing a semiconductor optical waveguide array and an array-structured semiconductor optical device |
JP3287311B2 (ja) * | 1998-08-05 | 2002-06-04 | 日本電気株式会社 | 半導体レーザ装置の製造方法 |
JP2000260714A (ja) * | 1999-03-08 | 2000-09-22 | Nec Corp | 有機金属気相成長による成膜方法及びこれを用いた半導体レーザの製造方法 |
JP3267582B2 (ja) | 1999-06-17 | 2002-03-18 | 日本電気株式会社 | 半導体レーザの製造方法 |
US6654533B1 (en) | 2000-06-16 | 2003-11-25 | Metrophotonics Inc. | Polarization independent waveguide structure |
KR100480803B1 (ko) * | 2000-12-21 | 2005-04-07 | 주식회사 하이닉스반도체 | 강유전체 커패시터의 제조방법 |
JP2003060306A (ja) * | 2001-08-13 | 2003-02-28 | Rohm Co Ltd | リッジ型半導体レーザ素子 |
JP2012248812A (ja) * | 2011-05-31 | 2012-12-13 | Sumitomo Electric Ind Ltd | 半導体光集積素子の製造方法 |
CN109524423A (zh) * | 2018-09-29 | 2019-03-26 | 中国科学院半导体研究所 | 可伪装可形变的智能可见光至近红外探测器及其制备方法 |
JP6707676B2 (ja) * | 2019-01-07 | 2020-06-10 | 東芝デバイス&ストレージ株式会社 | 半導体装置の製造方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0782991B2 (ja) * | 1984-07-26 | 1995-09-06 | 新技術事業団 | 化合物半導体単結晶薄膜の成長法 |
GB2162862B (en) * | 1984-07-26 | 1988-10-19 | Japan Res Dev Corp | A method of growing a thin film single crystalline semiconductor |
JPH0657636B2 (ja) * | 1985-05-29 | 1994-08-03 | 日本電信電話株式会社 | 化合物半導体薄膜形成法 |
JP2757407B2 (ja) * | 1988-12-20 | 1998-05-25 | 富士通株式会社 | 化合物半導体の結晶成長方法 |
JPH03218621A (ja) * | 1989-11-30 | 1991-09-26 | Toshiba Corp | 薄膜の選択成長方法及び薄膜の選択成長装置 |
JPH03201425A (ja) * | 1989-12-28 | 1991-09-03 | Fujitsu Ltd | 半導体装置 |
JP2815068B2 (ja) * | 1990-12-20 | 1998-10-27 | 富士通株式会社 | 気相成長方法及び装置 |
JP2773849B2 (ja) * | 1992-02-12 | 1998-07-09 | シャープ株式会社 | 気相の成長方法及び光励起気相成長装置 |
JP3223575B2 (ja) * | 1992-06-02 | 2001-10-29 | 三菱化学株式会社 | 化合物半導体とその製造方法 |
DE69323127T2 (de) * | 1992-08-10 | 1999-07-22 | Canon Kk | Halbleitervorrichtung und Herstellungsverfahren |
JP2546135B2 (ja) * | 1993-05-31 | 1996-10-23 | 日本電気株式会社 | 半導体微細形状の形成方法、InP回折格子の製造方法および分布帰還型レーザの製造方法 |
JPH0714787A (ja) * | 1993-06-22 | 1995-01-17 | Mitsubishi Chem Corp | Ii−vi族化合物半導体の製造方法 |
DE4421539C2 (de) * | 1993-06-22 | 2001-03-22 | Mitsubishi Chem Corp | Verfahren zur Herstellung eines Halbleiters aus einer Verbindung der Gruppe II-VI |
US5737353A (en) * | 1993-11-26 | 1998-04-07 | Nec Corporation | Multiquantum-well semiconductor laser |
WO1995022070A1 (en) * | 1994-02-11 | 1995-08-17 | Philips Electronics N.V. | Optical device with phased array |
GB9425729D0 (en) * | 1994-09-14 | 1995-02-22 | British Telecomm | Otical device |
JPH08245291A (ja) * | 1995-03-10 | 1996-09-24 | Sumitomo Electric Ind Ltd | Iii−v族化合物半導体結晶の成長方法 |
JP2900824B2 (ja) * | 1995-03-31 | 1999-06-02 | 日本電気株式会社 | 光半導体装置の製造方法 |
US5847415A (en) * | 1995-03-31 | 1998-12-08 | Nec Corporation | Light emitting device having current blocking structure |
JP2870632B2 (ja) * | 1995-07-13 | 1999-03-17 | 日本電気株式会社 | 半導体光集積回路およびその製造方法 |
JP2982685B2 (ja) * | 1996-03-28 | 1999-11-29 | 日本電気株式会社 | 光半導体装置 |
-
1997
- 1997-09-30 JP JP9266645A patent/JP3045115B2/ja not_active Expired - Fee Related
-
1998
- 1998-09-25 EP EP98118177A patent/EP0905798A3/en not_active Withdrawn
- 1998-09-28 CN CNB981200516A patent/CN1169268C/zh not_active Expired - Fee Related
- 1998-09-29 US US09/161,521 patent/US6036771A/en not_active Expired - Lifetime
- 1998-09-30 KR KR1019980041264A patent/KR100305301B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH11112102A (ja) | 1999-04-23 |
EP0905798A3 (en) | 2000-03-29 |
KR19990030322A (ko) | 1999-04-26 |
EP0905798A2 (en) | 1999-03-31 |
KR100305301B1 (ko) | 2001-09-24 |
CN1213197A (zh) | 1999-04-07 |
US6036771A (en) | 2000-03-14 |
JP3045115B2 (ja) | 2000-05-29 |
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C06 | Publication | ||
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ASS | Succession or assignment of patent right |
Owner name: NEC COMPUND SEMICONDUCTOR DEVICES CO LTD Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD. Effective date: 20030221 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Effective date of registration: 20030221 Address after: Kanagawa, Japan Applicant after: NEC Compund semiconductor Devices Co., Ltd. Address before: Tokyo, Japan Applicant before: NEC Corp. |
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Owner name: NEC ELECTRONICS TAIWAN LTD. Free format text: FORMER OWNER: NEC COMPUND SEMICONDUCTOR DEVICES CO LTD Effective date: 20060526 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Effective date of registration: 20060526 Address after: Kanagawa, Japan Patentee after: NEC Corp. Address before: Kanagawa, Japan Patentee before: NEC Compund semiconductor Devices Co., Ltd. |
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Owner name: RENESAS ELECTRONICS CORPORATION Free format text: FORMER OWNER: NEC CORP. Effective date: 20101110 |
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Effective date of registration: 20101110 Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: NEC Corp. |
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Granted publication date: 20040929 Termination date: 20130928 |