CN116847981A - 层叠体及半导体装置的制造方法 - Google Patents

层叠体及半导体装置的制造方法 Download PDF

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Publication number
CN116847981A
CN116847981A CN202280012984.8A CN202280012984A CN116847981A CN 116847981 A CN116847981 A CN 116847981A CN 202280012984 A CN202280012984 A CN 202280012984A CN 116847981 A CN116847981 A CN 116847981A
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resin film
substrate
laminate
resin
semiconductor element
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Chinese (zh)
Inventor
中嶋里沙乃
有本由香里
越野美加
荒木斉
富川真佐夫
藤原健典
青岛健太
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Toray Industries Inc
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Toray Industries Inc
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    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
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CN202280012984.8A 2021-04-01 2022-03-23 层叠体及半导体装置的制造方法 Pending CN116847981A (zh)

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JP2021062609 2021-04-01
JP2021-062609 2021-04-01
PCT/JP2022/013453 WO2022210154A1 (ja) 2021-04-01 2022-03-23 積層体および半導体装置の製造方法

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US (1) US12534399B2 (https=)
EP (1) EP4316815A4 (https=)
JP (1) JP7790341B2 (https=)
KR (1) KR20230167344A (https=)
CN (1) CN116847981A (https=)
TW (1) TW202306779A (https=)
WO (1) WO2022210154A1 (https=)

Families Citing this family (5)

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JPWO2023032888A1 (https=) * 2021-09-01 2023-03-09
CN118511275A (zh) 2022-12-16 2024-08-16 厦门市芯颖显示科技有限公司 转移载板、转移组件及微器件转移方法
WO2024124535A1 (zh) 2022-12-16 2024-06-20 厦门市芯颖显示科技有限公司 转移载板、转移组件及微器件转移方法
CN121079761A (zh) * 2023-04-26 2025-12-05 东丽株式会社 层叠体、层叠体的制造方法、半导体装置的制造方法
JP7617347B1 (ja) * 2023-06-26 2025-01-17 積水化学工業株式会社 樹脂組成物及び接続構造体の製造方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3120476B2 (ja) 1991-02-26 2000-12-25 東レ株式会社 カラーフィルタ用着色ペースト
JP5444798B2 (ja) 2009-04-10 2014-03-19 ソニー株式会社 素子の移載方法
WO2012133367A1 (ja) * 2011-03-28 2012-10-04 東レ株式会社 導電積層体およびタッチパネル
WO2012142177A2 (en) * 2011-04-11 2012-10-18 Ndsu Research Foundation Selective laser-assisted transfer of discrete components
JP6261508B2 (ja) * 2012-09-28 2018-01-17 東京応化工業株式会社 積層体、積層体の分離方法、および分離層の評価方法
US9650723B1 (en) * 2013-04-11 2017-05-16 Soraa, Inc. Large area seed crystal for ammonothermal crystal growth and method of making
US20160093600A1 (en) 2014-09-25 2016-03-31 X-Celeprint Limited Compound micro-assembly strategies and devices
CN107405907B (zh) * 2015-03-26 2019-06-18 东丽株式会社 树脂层叠膜及含有其的层叠体、tft基板、有机el元件滤色片,以及它们的制造方法
JP5896067B1 (ja) 2015-04-06 2016-03-30 Jfeスチール株式会社 連続鋳造機を用いた鋳片の製造方法
KR102103157B1 (ko) * 2015-04-17 2020-04-22 아사히 가세이 가부시키가이샤 수지 조성물, 폴리이미드 수지막, 및 그 제조 방법
SG11201808291YA (en) * 2016-03-30 2018-10-30 Lintec Corp Semiconductor processing sheet
JP6939556B2 (ja) * 2016-06-24 2021-09-22 東レ株式会社 積層フィルム
KR102008766B1 (ko) * 2017-01-31 2019-08-09 주식회사 엘지화학 가요성 기판 제조용 적층체 및 이를 이용한 가요성 기판의 제조방법
WO2019022121A1 (ja) * 2017-07-26 2019-01-31 富士フイルム株式会社 積層体、積層体の製造方法および画像表示装置
WO2019207920A1 (ja) * 2018-04-26 2019-10-31 Jsr株式会社 半導体素子の実装方法および実装装置
WO2020054529A1 (ja) * 2018-09-12 2020-03-19 東レ株式会社 積層フィルム
JPWO2020080276A1 (https=) * 2018-10-16 2020-04-23
WO2020154225A1 (en) * 2019-01-22 2020-07-30 Brewer Science, Inc. Laser-releasable bonding materials for 3-d ic applications
JP7145096B2 (ja) 2019-02-12 2022-09-30 信越化学工業株式会社 微小構造体移載装置、スタンプヘッドユニット、微小構造体移載用スタンプ部品及び微小構造体集積部品の移載方法
JP7287797B2 (ja) * 2019-03-11 2023-06-06 日東電工株式会社 接着フィルム付きダイシングテープ
WO2020189273A1 (ja) * 2019-03-15 2020-09-24 東レ株式会社 フィルムおよびそれを用いた回収フィルムの製造方法
US11374149B2 (en) * 2019-05-09 2022-06-28 Samsung Electronics Co., Ltd. Method of manufacturing display device and source substrate structure
JP7321760B2 (ja) 2019-05-09 2023-08-07 三星電子株式会社 ディスプレイ装置の製造方法、およびソース基板構造体

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