CN116825872A - HJT solar cell structure with double-layer TCO conductive film - Google Patents

HJT solar cell structure with double-layer TCO conductive film Download PDF

Info

Publication number
CN116825872A
CN116825872A CN202311043013.2A CN202311043013A CN116825872A CN 116825872 A CN116825872 A CN 116825872A CN 202311043013 A CN202311043013 A CN 202311043013A CN 116825872 A CN116825872 A CN 116825872A
Authority
CN
China
Prior art keywords
tco
double
film
conductive film
amorphous silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202311043013.2A
Other languages
Chinese (zh)
Inventor
郭文丰
刘俊
张勤辉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nantong Leneng Electric Power Co ltd
Original Assignee
Nantong Leneng Electric Power Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nantong Leneng Electric Power Co ltd filed Critical Nantong Leneng Electric Power Co ltd
Priority to CN202311043013.2A priority Critical patent/CN116825872A/en
Publication of CN116825872A publication Critical patent/CN116825872A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Sustainable Development (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The application relates to the field of HJT solar cells, in particular to a HJT solar cell structure with a double-layer TCO conductive film, which comprises a substrate, and amorphous silicon films, TCO films and electrodes which are sequentially laminated on two sides of the substrate, wherein the substrate is made of n-type silicon substrate materials, and the amorphous silicon films on the front side and the back side of the substrate are made of P-type oxidized amorphous silicon; the TCO film is respectively positioned at the outer side of the amorphous silicon film and comprises a first TCO conductive film and a second TCO conductive film, wherein the TCO film adopts a double-layer structure, and a plurality of electrodes are arranged at the outer side of the TCO film. The application adopts double-layer TCO conductive film to reduce transverse transmission resistance and contact resistance, and has the advantages of high mobility, high transmittance and low contact.

Description

HJT solar cell structure with double-layer TCO conductive film
Technical Field
The application relates to the field of HJT solar cells, in particular to a HJT solar cell structure with a double-layer TCO conductive film.
Background
The conversion efficiency of crystalline silicon solar cells is improved year by year with the development of technology. Currently, in the photovoltaic industry, the conversion efficiency of monocrystalline silicon solar cells is over 20%, and the conversion efficiency of polycrystalline silicon solar cells is over 18.5%. However, mass-produced silicon-based solar cells with conversion efficiency up to 22% or more are only back contact solar cells (IBC) of SunPower company in the united states and amorphous silicon/crystalline silicon heterojunction solar cells (HJT) with intrinsic thin layers of pine company in japan. Compared with the IBC solar cell, the HJT cell has the advantages of low energy consumption, simple process flow, small temperature coefficient and the like, and the advantages are also the reason that the HJT solar cell can stand out from a plurality of high-efficiency silicon-based solar cell schemes.
Due to the defect of the existing solar cell technology equipment, the efficiency of photoelectric conversion in the existing solar cell is low, the energy loss in the existing solar cell is easy to cause, and the stability of the service performance of the solar cell panel is not guaranteed.
Disclosure of Invention
In order to overcome the problems in the prior art, the application provides a HJT solar cell structure with a double-layer TCO conductive film.
The HJT solar cell structure with the double-layer TCO conductive film provided by the application adopts the following technical scheme:
a HJT solar cell structure with double-layer TCO conductive films comprises a substrate, and amorphous silicon films, TCO films and electrodes which are sequentially laminated on two sides of the substrate, wherein the substrate is made of n-type silicon substrate materials, and the amorphous silicon films on the front side and the back side of the substrate are made of P-type amorphous silicon oxide; the TCO film is respectively positioned at the outer side of the amorphous silicon film and comprises a first TCO conductive film and a second TCO conductive film, wherein the TCO film adopts a double-layer structure, and a plurality of electrodes are arranged at the outer side of the TCO film.
By adopting the technical scheme, the efficiency of the battery can be improved by adopting the n-type silicon substrate material as the substrate. Compared with the traditional crystalline silicon material, the amorphous silicon thin film battery has the advantages of low energy consumption, low price, flexible use and suitability for industrial production. HJT the first and second TCO conductive films each adopt a double-layer TCO conductive film for reducing lateral transmission resistance and contact resistance and realizing high mobility, transmittance and low contact.
Preferably, the thickness of the inner layer in the TCO film bilayer structure is greater than the thickness of the outer layer.
Through adopting above-mentioned technical scheme, the thickness of inboard TCO conductive film is greater than the thickness of outside TCO conductive film, and the one side that is close to the substrate is ground doping concentration, and thickness is thicker for guarantee high mobility and transmissivity, and one side that is close to the conducting electrode is high doping concentration, and thickness is thinner, is used for reducing horizontal transmission resistance and contact resistance, realizes high mobility transmissivity and low contact, improves HJT solar cell's photoelectric conversion efficiency.
Preferably, the electrode adopts HJT conductive silver paste composition, which comprises doped dendritic silver powder, flake silver powder, resin, curing agent and auxiliary agent, and diluent is added into the resin.
Preferably, xylene is used as the diluent.
By adopting the technical scheme, a small amount of dimethylbenzene is used as a diluent to control the viscosity of the polymer and improve the dispersibility of particles in the resin
Preferably, the dendritic silver powder accounts for 15-35wt%, the flaky silver powder accounts for 30-50wt%, the resin accounts for 1-10wt%, the curing agent accounts for 1-5wt%, and the auxiliary accounts for 1-5wt%.
By adopting the technical scheme, the flake silver powder is easier to contact with the resin and is soaked by the resin, so that the continuity of the resin matrix is not damaged. Therefore, the conductive silver gel filled flake silver powder has good mechanical properties. If the shearing force of the conductive silver paste filled with the flake silver powder is highest, the conductive silver paste filled with the flake doped dendritic silver powder and the conductive silver paste filled with the dendritic silver powder are next. The dendritic silver powder is easy to agglomerate to form clusters. According to van der Waals forces, interactions within clusters are too weak, resulting in poor mechanical properties of the conductive silver paste. Thus, the filled dendritic silver powder had the lowest shear force.
Preferably, the auxiliary agent comprises one or more of dispersing agent, leveling agent and adhesion promoter, wherein the dispersing agent is a compound with terminal hydroxyl; the leveling agent is an organosilicon leveling agent or an acrylic leveling agent; the adhesion promoter is a hydroxyl functional copolymer solution containing acidic groups.
Preferably, the outer side surface of the TCO film is annularly provided with etching grooves, and annular insulating glue is filled in the etching grooves.
Through adopting above-mentioned technical scheme, increase the factor of insulating glue around the negative pole point, cover isolating ring and surrounding TCO, can realize that isolating ring internal diameter is minimum, reduce the PN junction area of failing that the back arouses because of keeping apart, increase the PN junction effective utilization area at battery back, improve battery efficiency and power. The use of the insulating adhesive can also improve the insulation effect inside and outside the TCO isolating ring of the negative electrode, reduce the leakage failure proportion and improve the yield.
Preferably, an amorphous silicon doped layer is arranged between the amorphous silicon film layer and the TCO film layer, and the thickness of the amorphous silicon doped layer is 4-8nm.
Preferably, the amorphous silicon film is doped with boron, and the doping concentration of the boron is 0.7-0.8%.
By adopting the technical scheme, trace boron is doped, si-Si bonds can be broken to form more stable Si-B bonds, the defect of amorphous silicon oxide is further reduced, the quality of the film is improved, and the light transmittance of a film sample is increased. However, when a large amount of boron is doped, the formation of a complex with Si-H bonds and unfilled silicon atom dangling bonds is increased, the quality of the amorphous silicon film is reduced, and the light transmittance of the film sample is reduced.
Preferably, the thickness of the amorphous silicon film and the TCO film is 10-15nm.
In summary, the present application includes at least one of the following beneficial technical effects:
the photoelectric conversion efficiency of the HJT solar cell is improved, wherein the first TCO conductive film and the second TCO conductive film are double-layer TCO conductive films, so that the transverse transmission resistance and the contact resistance are reduced, and high mobility, transmittance and low contact are realized;
2. the dendritic silver powder and the flake silver powder are easier to contact with resin and are soaked by the resin, so that the continuity of a resin matrix is not damaged, and the conductive silver paste filled with the dendritic silver powder and the flake silver powder has good mechanical properties;
3. the trace boron can break the Si-Si bond to form a more stable Si-B bond, further reduce the defect of oxidized amorphous silicon, improve the quality of the film and increase the light transmittance of the film sample.
Drawings
FIG. 1 is a schematic diagram of the overall structure of a HJT solar cell with a double-layer TCO conductive film;
fig. 2 is a graph of transmitted light spread as a function of wavelength in amorphous silicon thin films at different boron doping concentrations in a HJT solar cell structure with a double TCO conductive film.
Fig. 3 is a graph showing the variation of optical band gap in amorphous silicon films at different boron doping concentrations in a HJT solar cell structure with a double TCO conductive film.
Reference numerals illustrate: 1. a substrate; 2. an amorphous silicon thin film; 3. a TCO film; 31. a first TCO conductive film; 32. a second TCO conductive film; 33. etching the groove; 34. annular insulating glue; 4. an electrode; 5. an amorphous silicon doped layer.
Detailed Description
The application is described in further detail below with reference to fig. 1-3.
The embodiment of the application discloses a HJT solar cell structure with a double-layer TCO conductive film.
Referring to fig. 1, a HJT solar cell structure with a double-layer TCO conductive film includes a substrate 1, and an amorphous silicon film 2, a TCO film 3 and an electrode 4 sequentially laminated on both sides of the substrate 1, wherein the substrate 1 is made of an n-type silicon substrate 1 material, and the amorphous silicon films 2 on the front and back sides of the substrate 1 are made of P-type amorphous silicon oxide; the TCO film 3 is located outside the amorphous silicon film 2, and includes a first TCO conductive film 31 and a second TCO conductive film 32, where the TCO film 3 adopts a double-layer structure, and a plurality of electrodes 4 are disposed outside the TCO film 3. The use of n-type silicon substrate 1 material for substrate 1 can improve the efficiency of the cell. Compared with the traditional crystalline silicon material, the amorphous silicon film 2 battery has the advantages of low energy consumption, low price, flexible use and suitability for industrial production. HJT the first and second TCO conductive films 31 and 32 each adopt a double-layer TCO conductive film for reducing lateral transmission resistance and contact resistance and realizing high mobility, transmittance and low contact.
Referring to fig. 1, the thickness of the inner layer is greater than that of the outer layer in the double-layered structure of the tco film 3. The thickness of the TCO conductive film on the inner side is larger than that of the TCO conductive film on the outer side, the ground doping concentration is arranged on the side close to the substrate 1, the thickness is thicker, the high mobility and the transmittance are guaranteed, the high doping concentration is arranged on the side close to the conductive electrode 4, the thickness is thinner, the transverse transmission resistance and the contact resistance are reduced, the high mobility transmittance and the low contact are achieved, and the photoelectric conversion efficiency of the HJT solar cell is improved.
Referring to fig. 1, the electrode 4 adopts HJT conductive silver paste composition, which comprises doped dendritic silver powder, flaky silver powder, resin, curing agent and auxiliary agent, wherein a diluent is added into the resin. The diluent adopts dimethylbenzene. The use of a small amount of xylene as a diluent controls the viscosity of the polymer and improves the dispersibility of the particles in the resin.
Referring to fig. 1, the dendritic silver powder content was 35wt%, the plate-like silver powder content was 50wt%, the resin content was 10wt%, the curing agent content was 5wt%, and the auxiliary content was 5wt%. By adopting the technical scheme, the flake silver powder is easier to contact with the resin and is soaked by the resin, so that the continuity of the resin matrix is not damaged. Therefore, the conductive silver gel filled flake silver powder has good mechanical properties. If the shearing force of the conductive silver paste filled with the flake silver powder is highest, the conductive silver paste filled with the flake doped dendritic silver powder and the conductive silver paste filled with the dendritic silver powder are next. The dendritic silver powder is easy to agglomerate to form clusters. According to van der Waals forces, interactions within clusters are too weak, resulting in poor mechanical properties of the conductive silver paste. Thus, the filled dendritic silver powder had the lowest shear force.
Referring to fig. 1, the adjuvant includes a dispersant, which is a compound having a terminal hydroxyl group; the adhesion promoter is a hydroxyl functional copolymer solution containing acidic groups. An etching groove 33 is annularly distributed on the outer side surface of the TCO film 3, and annular insulating glue 34 is filled in the etching groove 33. The factor of the insulating glue is increased around the negative electrode point, the isolating ring and the surrounding TCO are covered, the minimization of the inner diameter of the isolating ring can be realized, the PN junction failure area of the back surface caused by isolation is reduced, the PN junction effective utilization area of the back surface of the battery is increased, and the battery efficiency and power are improved. The use of the insulating adhesive can also improve the insulation effect inside and outside the TCO isolating ring of the negative electrode 4, reduce the leakage failure proportion and improve the yield.
Referring to fig. 1, 2 and 3, an amorphous silicon doped layer 5 is provided between the amorphous silicon thin film 2 layer and the TCO thin film 3 layer, and the thickness of the amorphous silicon doped layer 5 is 8nm. The amorphous silicon thin film 2 is doped with boron, and the doping concentration of boron is 0.75%. The trace boron can break the Si-Si bond to form a more stable Si-B bond, further reduce the defect of oxidized amorphous silicon, improve the quality of the film and increase the light transmittance of the film sample. However, when a large amount of boron is doped, the formation of a complex with Si-H bonds and unfilled dangling bonds of silicon atoms increases, the quality of the amorphous silicon thin film 2 decreases, and the light transmittance of the thin film sample decreases.
Referring to fig. 1, the thickness of both the amorphous silicon thin film 2 and the TCO thin film 3 is 15nm.
The above embodiments are not intended to limit the scope of the present application, so: all equivalent changes in structure, shape and principle of the application should be covered in the scope of protection of the application.

Claims (10)

1.HJT solar cell structure with double-deck TCO conducting film, including substrate (1) and range upon range of amorphous silicon film (2), TCO film (3) and electrode (4) in proper order in substrate (1) both sides, its characterized in that:
the substrate (1) is made of an n-type silicon substrate (1), wherein amorphous silicon films (2) on the front side and the back side of the substrate (1) are made of P-type amorphous silicon oxide; the TCO film (3) is respectively positioned at the outer sides of the amorphous silicon films (2) and comprises a first TCO conductive film (31) and a second TCO conductive film (32), wherein the TCO film (3) adopts a double-layer structure, and a plurality of electrodes (4) are arranged at the outer sides of the TCO film (3).
2. A HJT solar cell structure with a double TCO conductive film according to claim 1 characterized in that: the thickness of the inner layer in the double-layer structure of the TCO film (3) is larger than that of the outer layer.
3. A HJT solar cell structure with a double TCO conductive film according to claim 1 characterized in that: the electrode (4) adopts a HJT conductive silver paste composition, and comprises doped dendritic silver powder, flake silver powder, resin, a curing agent and an auxiliary agent, wherein a diluent is also added into the resin.
4. A HJT solar cell structure with a double TCO conductive film according to claim 3 characterised in that: the diluent adopts dimethylbenzene.
5. A HJT solar cell structure with a double TCO conductive film according to claim 3 characterised in that: the dendritic silver powder comprises 15-35wt% of flake silver powder, 30-50wt% of flake silver powder, 1-10wt% of resin, 1-5wt% of curing agent and 1-5wt% of auxiliary agent.
6. A HJT solar cell structure with a double TCO conductive film according to claim 5 characterized in that: the auxiliary agent comprises one or more of a dispersing agent, a leveling agent and an adhesion promoter, wherein the dispersing agent is a compound with a terminal hydroxyl group; the leveling agent is an organosilicon leveling agent or an acrylic leveling agent; the adhesion promotion is a hydroxyl functional copolymer solution containing acidic groups.
7. A HJT solar cell structure with a double TCO conductive film according to claim 1 characterized in that: an etching groove (33) is annularly distributed on the outer side surface of the TCO film (3), and annular insulating glue (34) is filled in the etching groove (33).
8. A HJT solar cell structure with a double TCO conductive film according to claim 1 characterized in that: an amorphous silicon doping layer (5) is arranged between the amorphous silicon film (2) layer and the TCO film (3) layer, and the thickness of the amorphous silicon doping layer (5) is 4-8nm.
9. A HJT solar cell structure with a double TCO conductive film according to claim 1 characterized in that: the amorphous silicon film (2) is doped with boron, and the doping concentration of the boron is 0.7-0.8%.
10. A HJT solar cell structure with a double TCO conductive film according to claim 1 characterized in that: the thickness of the amorphous silicon film (2) and the thickness of the TCO film (3) are 10-15nm.
CN202311043013.2A 2023-08-18 2023-08-18 HJT solar cell structure with double-layer TCO conductive film Pending CN116825872A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202311043013.2A CN116825872A (en) 2023-08-18 2023-08-18 HJT solar cell structure with double-layer TCO conductive film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202311043013.2A CN116825872A (en) 2023-08-18 2023-08-18 HJT solar cell structure with double-layer TCO conductive film

Publications (1)

Publication Number Publication Date
CN116825872A true CN116825872A (en) 2023-09-29

Family

ID=88122341

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202311043013.2A Pending CN116825872A (en) 2023-08-18 2023-08-18 HJT solar cell structure with double-layer TCO conductive film

Country Status (1)

Country Link
CN (1) CN116825872A (en)

Similar Documents

Publication Publication Date Title
CN104465892A (en) Method for manufacturing photovoltaic modules interconnected on same sides of adjacent solar cells in solar cell string
CN102683468A (en) Emitter structure of crystal silicon heterojunction solar battery
CN203423207U (en) Solar cell module
CN104966743A (en) Anti-PID (potential Induced Degradation) photovoltaic module
CN102244111A (en) Thin film solar cell
CN108615774A (en) A kind of anti-PID components and preparation method thereof
CN108615775B (en) Interdigital back contact heterojunction monocrystalline silicon battery
US20110259415A1 (en) Backsheet for a photovoltaic module
CN116825872A (en) HJT solar cell structure with double-layer TCO conductive film
CN208507687U (en) Interdigital back contact heterojunction monocrystalline silicon battery
CN206460967U (en) A kind of cadmium telluride diaphragm solar battery
CN216084899U (en) Solar cell applying phase change heat storage to new energy
CN112216747B (en) Heterojunction solar cell and preparation method and application thereof
CN101719521A (en) Solar cell of sandwich structure consisting of Si/FeSi2/Si and manufacturing method thereof
CN102263156A (en) Technology for improving conversion efficiency of solar photovoltaic battery
CN104659117A (en) Solar photovoltaic module
CN103066153A (en) Silicon-based thin-film lamination solar cell and manufacturing method thereof
CN203351632U (en) Thin film silicon and crystalline silicon heterojunction bifacial solar cell
CN203553178U (en) TCO glass capable of increasing transmission and reducing PID phenomenon
CN102254976A (en) Double-sided solar cell component
CN102751373B (en) Cadmium telluride silica-base film composite solar battery
CN206878022U (en) A kind of multi-crystal silicon film solar battery
CN113964228B (en) Heterojunction solar cell and preparation method and application thereof
CN220332184U (en) Fluorine-free high-water-resistance backboard for TOPCon/HJT battery
CN217280791U (en) HJT solar cell structure with double-layer TCO conductive film

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination