CN102751373B - Cadmium telluride silica-base film composite solar battery - Google Patents
Cadmium telluride silica-base film composite solar battery Download PDFInfo
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- CN102751373B CN102751373B CN201210165802.9A CN201210165802A CN102751373B CN 102751373 B CN102751373 B CN 102751373B CN 201210165802 A CN201210165802 A CN 201210165802A CN 102751373 B CN102751373 B CN 102751373B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
A kind of cadmium telluride silica-base film composite solar battery, including being arranged on upper surface of substrate back electrode, it is arranged on the bottom battery knot of back electrode upper surface, it is arranged on the preceding electrode that bottom battery ties surface, it, which also includes being arranged on bottom battery, ties battery knot in 0~5 knot on surface, middle battery ties surface and sets the top battery knot connected with bottom battery knot and middle battery knot, preceding electrode is arranged on the upper surface of top battery knot, in addition to is arranged between bottom battery knot and middle battery knot or is arranged on middle battery knot and push up the conductive semi reflective layer in centre between battery knot.The present invention has the advantages that solar energy high conversion efficiency, the thermal efficiency are high, production cost is low, is easy to carry, and can be used as solar cell.
Description
Technical field
The invention belongs to technical field of solar batteries, and in particular to cadmium telluride solar cell.
Background technology
The research report of the UN organizations shows that energy consumption index is to weigh social development and a flourishing horizontal weight
Want index.For quality of further making the life better, the existence life in particularly poor area, electricity consumption is needed in present water
More than ten times are further added by flat.The mankind mainly have thermal power generation, water generating, nuclear power technology at present.Used by thermal power generation
Fossil fuel energy, while people's civilization is brought with progress, the environmental pollution of getting worse is also brought, fossil fuel is
It is fewer and fewer, face the edge being exhausted.The utilization of water generating has reached peak, it is impossible to takes shape again.Nuclear power skill
Art is always a national defence and strategic sensitive technology, and nuke rubbish not to the utmost is difficult processing, in April, 2011 Fukushima, Japan nuclear power station by
Seismic sea wave leaks a large amount of nuclear radiation after destroying, the safety of nuclear power station is even more to be bound to arouse fear.
Solar energy is the inexhaustible energy, and the utilization of solar energy will not cause environmental pollution, therefore, too
The utilization of positive energy, is paid attention to by countries in the world, and solar product has solar water heater, solar energy collection using wider at present
Hot device, solar cell etc..Solar cell has silicon thin-film battery, list（It is more）Crystal silicon battery, silicon thin-film battery, cadmium telluride electricity
Pond, copper indium gallium selenide cell, crystal silicon technology is first generation conventional art, with low content of technology, with a long history, and starting investment is relatively
It is low, occupy most markets at present.But because use many crystal silicon materials costly；Silicon thin-film battery manufacturing process consumes
Can be more, energy reciprocation cycle is oversize；Cadmium telluride cells manufacturing process produces too many pollution, and the current cost of cadmium telluride product is relatively low,
It is world solar energy industry leader；The advantages of CIGS is that laboratory start efficiency is high, although only a small amount of market product,
Service efficiency all well below its Laboratory efficiencies, its fatal defects be poor repeatability, manufacture difficulty it is big, to trace amounts of water vapor pole
It is sensitive, and key element CdTe earth contents are low, toxicity is high.
Solar cell power generation cost is still far above traditional thermal power generation, hydroelectric generation etc. at present.
The cadmium sulfide of First Solar companies of the U.S./cadmium telluride product throughout world various regions, have built up more at present
Individual large-sized solar cell power plant.End in November, 2011, the accumulative total of generating electricity is up to 5000 megawatts (5GW).
Cadmium sulfide is beige material, absorbs blue wave band, unstable under strong ultraviolet light.
It is Patent No. 201010274863.X, entitled《A kind of CdTe battery transition layer and preparation method thereof and
CdTe》Apply for a patent, its primary structure be by stack gradually glass substrate, transparency conducting layer, CdS layer, CdTe layer, transition
Layer and back electrode are formed.Transition zone is the sandwich construction that ZnTe and Cu layers are alternately accumulated.This solar cell, it is mainly lacked
Point is complicated, thermal efficiency bottom.
In technical field of solar, currently need to urgently solve a technical problem is to provide a kind of solar energy conversion efficiency
Solar cell high, product cost is low.
The content of the invention
A kind of the shortcomings that technical problems to be solved by the invention are to overcome above-mentioned solar cell, there is provided conversion efficiency
Cadmium telluride-silica-base film composite solar battery high, product cost is low.
Technical scheme is used by solving above-mentioned technical problem：It includes being arranged on the back electrode of upper surface of substrate, if
The bottom battery knot in back electrode upper surface is put, is arranged on the preceding electrode that bottom battery ties surface；It also includes being arranged on bottom battery
Battery knot in 0~5 knot on surface is tied, middle battery ties surface and sets the top battery connected with bottom battery knot and middle battery knot
Knot, preceding electrode are arranged on the upper surface of top battery knot.
The bottom battery knot of the present invention is thin by p-type Cadimium telluride thin film, n-type cadmium sulphide membrane or cadmium sulfide-vulcanization kirsite
Film is formed, and p-type Cadimium telluride thin film is arranged on back electrode upper surface, n-type cadmium sulphide membrane or cadmium sulfide-zinc sulphide alloy firm
It is arranged on p-type Cadimium telluride thin film upper surface, the material group that cadmium sulfide-zinc sulphide alloy firm is represented with formula CdxZn1-xS
Into 0≤x in formula<1.
The middle battery of the present invention becomes battery knot or Nano thin film battery knot or amorphous silicon germanium thin film in amorphous silicon membrane
Battery knot or nanometer germanium-silicon film battery knot.
Battery knot or Nano thin film battery knot or amorphous silicon germanium thin film battery knot or received in the amorphous silicon membrane of the present invention
Rice germanium-silicon film battery knot includes p-, i-, n- layer, and p- layers are p-type semiconductive thin films, and i- layers are Intrinsical semiconductive thin films,
N- layers are n-type semiconductive thin films, and p- layers are arranged on bottom battery and tie surface, and i- layers are arranged on p- layers upper surface, and n- layers are arranged on
I- layers upper surface.
The top battery of the present invention becomes silicon thin film top battery knot.
The silicon thin film top battery of the present invention becomes amorphous silicon membrane top battery knot.
The amorphous silicon membrane top battery knot of the present invention includes p-, i-, n-layer, and p layers are p-type semiconductive thin films, and i- layers are these
Sign type semiconductive thin film, n- layers are n-type semiconductive thin films, and p- layers are arranged on bottom battery knot or middle battery ties surface, and i- layers are set
Put in p- layers upper surface, n- layers are arranged on i- layers upper surface.
The substrate of the present invention is that the surface of stainless steel thin slice of the thickness no more than 0.15mm or thickness no more than 2mm is coated with gold
Belong to the high polymer material substrate of film；Described high polymer material is polyimides, polyvinyl fluoride, density ＞ 1.55g/c m3's
Any one in polyvinyl chloride.
The present invention it also include be arranged between bottom battery knot and middle battery knot and/or be arranged on middle battery knot with top battery
The conductive semi reflective layer in centre between knot.
The thickness of the bottom battery knot of the present invention is at least 1000nm.The thickness of the middle battery knot of the present invention for 250~
2000nm, the thickness of top battery knot of the invention are at least 200nm.
The present invention combines the conversion efficiency for improving solar energy using non-crystalline silicon transformation of blue band of light and cadmium telluride,
Reduce the cost of solar cell；Using bottom battery and middle battery, top battery multijunction cell in series, bottom battery uses tellurium
Cadmium, cadmium sulfide or cadmium sulfide-vulcanization zn alloy coating, the transparency of solar cell is improved, add stability and steady
Determine efficiency, improve the conversion ratio and the thermal efficiency of cadmium telluride solar cell；Substrate is no more than 0.15mm stainless steels using thickness
The surface of thin slice or thickness no more than 2mm is coated with the high polymer material substrate of metallic film, and substrate has flexibility, light weight, list
Position weight generating efficiency is high, and prepared solar cell can be crimped, can carried with.The present invention has solar energy conversion effect
Rate is high, the thermal efficiency is high, production cost is low, the advantages that being easy to carry, and can be used as solar cell.
Fig. 1 is the structural representation of the embodiment of the present invention 1.
Embodiment
The present invention is described in more detail with each embodiment below in conjunction with the accompanying drawings, but the invention is not restricted to these implementations
Example.
Embodiment 1
In Fig. 1, the cadmium telluride of the present embodiment-silica-base film composite solar battery by preceding electrode 1, top battery knot 2, in
Battery knot 3, middle conductive semi reflective layer 4, bottom battery knot 5, back electrode 6, the connection of substrate 7 are formed.
The substrate 7 of the present embodiment is not surpassed using soft stainless steel thin slice, thickness 0.1mm, the thickness of stainless steel thin slice
0.15mm is crossed, the substrate 7 of this structure, flexible, light weight, unit mass generating efficiency is high, prepared solar cell
It can crimp, can carry with.The substrate 7 of the present embodiment can also use substrate of glass.Back electrode 6, the back of the body are plated in the upper surface of substrate 7
Electrode 6 uses metal molybdenum film.Plate p-type Cadimium telluride thin film, p-type Cadimium telluride thin film upper surface plating n-type in the upper surface of back electrode 6
Cadmium sulphide membrane, p-type Cadimium telluride thin film and n-type cadmium sulphide membrane form the bottom battery knot 5 of the present embodiment, bottom battery knot 5
Thickness is 1000nm, also greater than 1000nm, conductive semi reflective layer 4 among the upper surface plating of bottom battery knot 5, and middle conduction half is anti-
Battery knot 3 in 1 knot is plated in the upper surface of photosphere 4, and middle conductive semi reflective layer 4 has good translucency in long wavelength's section, short
Ripple wave band has preferable reflective, unabsorbed some light is reflected back into middle battery knot 3 again, battery knot 3 in can reducing
Thickness, increase the conversion efficiency of stable solar cell.
The middle battery knot 3 of the present embodiment is battery knot in amorphous silicon membrane, in amorphous silicon membrane battery knot include p-, i-,
N- layers, p- layers are p-type semiconductive thin films, and i- layers are intrinsic type amorphous silicon semiconductor films, and n- layers are n-type semiconductive thin films,
P- layers are plated in the upper surface of bottom battery knot 6, and i- layers are plated in p- layers upper surface, and n- layers are plated in i- layers upper surface.The middle electricity of the present embodiment
The thickness of pond knot 3 is 300nm, and the thickness of middle battery knot 3 is alternatively 250nm, and the thickness of middle battery knot 3 can also be 350nm.
Arbitrarily chosen in 250~350 nanometer ranges, the battery knot 2 on the upper surface of middle battery knot 3 plating top.
The top battery knot 2 of the present embodiment is amorphous silicon membrane top battery knot, and amorphous silicon membrane top battery becomes silicon thin film top
One embodiment of battery knot, amorphous silicon membrane top battery knot include p-, i-, n- layer, and p- layers are p-type semiconductive thin films, i- layers
It is intrinsic type amorphous silicon semiconductor film, n- layers are n-type semiconductive thin films, and p- layers are plated in the middle upper surface of battery knot 3, the plating of i- layers
In p- layers upper surface, n- layers are plated in i- layers upper surface.The thickness of top battery knot 2 is 200nm, also greater than 200nm, pushes up battery knot
2 connect with middle battery knot 3, bottom battery knot 5, electrode 1 before being coated with the upper surface of top battery knot 2.
Embodiment 2
The cadmium telluride of the present embodiment-silica-base film composite solar battery by preceding electrode 1, top battery knot 2, middle battery knot 3,
Middle conductive semi reflective layer 4, bottom battery knot 5, back electrode 6, the connection of substrate 7 are formed.
The substrate 7 of the present embodiment, back electrode 6, bottom battery knot 5, the structure of middle conductive semi reflective layer 4 and structure sheaf it
Between connecting relation it is same as Example 1.Battery knot 3 in being coated with the upper surface of bottom battery knot 5.The middle battery knot 3 of the present embodiment
For battery knot in amorphous silicon membrane, battery knot includes p-, i-, n- layer in amorphous silicon membrane, and p- layers are p-type semiconductive thin films, i-
Layer is intrinsic type amorphous silicon semiconductor film, and n- layers are n-type semiconductive thin films, and p- layers are plated in the upper surface of bottom battery knot 6, i- layers
P- layers upper surface is plated in, n- layers are plated in i- layers upper surface.The thickness of the middle battery knot 3 of the present embodiment is 300nm, middle battery knot 3
Thickness be alternatively 250nm, the thickness of middle battery knot 3 can also be 350nm, arbitrarily be chosen in 250~350 nanometer ranges.
The battery knot 2 on the upper surface of middle battery knot 3 plating top, the structure of top battery knot 2 is same as Example 1, top battery knot 2 and middle battery
Knot 3, bottom battery knot 5 are connected.Connecting relation between other structures layer and structure sheaf and structure sheaf is same as Example 1.
Embodiment 3
The cadmium telluride of the present embodiment-silica-base film composite solar battery by preceding electrode 1, top battery knot 2, middle battery knot 3,
Middle conductive semi reflective layer 4, bottom battery knot 5, back electrode 6, the connection of substrate 7 are formed.
The substrate 7 of the present embodiment, back electrode 6, bottom battery knot 5, the structure of middle conductive semi reflective layer 4 and structure sheaf it
Between connecting relation it is same as Example 1.Battery knot 3 in being coated with the upper surface of bottom battery knot 5.The middle battery knot 3 of the present embodiment
For battery knot in amorphous silicon membrane, battery knot includes p-, i-, n- layer in amorphous silicon membrane, and p- layers are p-type semiconductive thin films, i-
Layer is intrinsic type amorphous silicon semiconductor film, and n- layers are n-type semiconductive thin films, and p- layers are plated in the upper surface of bottom battery knot 6, i- layers
P- layers upper surface is plated in, n- layers are plated in i- layers upper surface.The thickness of the middle battery knot 3 of the present embodiment is 300nm, middle battery knot 3
Thickness be alternatively 250nm, the thickness of middle battery knot 3 can also be 350nm, arbitrarily be chosen in 250~350 nanometer ranges.
The battery knot 2 on the upper surface of middle battery knot 3 plating top, the structure of top battery knot 2 is same as Example 1, top battery knot 2 and middle battery
Knot 3, bottom battery knot 5 are connected.Connecting relation between other structures layer and structure sheaf is same as Example 1.
Embodiment 4
In embodiment 1~3 more than, middle battery knot 3 is Nano thin film battery knot, and Nano thin film battery knot includes
P-, i-, n- layer, p- layers are p-type semiconductive thin films, and i- layers are Intrinsical nano-silicon semiconductive thin films, and n- layers are n-type semiconductors
Film, p- layers are plated in the upper surface of bottom battery knot 6, and i- layers are plated in p- layers upper surface, and n- layers are plated in i- layers upper surface.The present embodiment
The thickness of middle battery knot 3 is 1000nm, and the thickness of middle battery knot 3 is alternatively 1500nm, and the thickness of middle battery knot 3 can also be
2000nm, arbitrarily chosen in the range of 1000~2000nm, the thickness of middle battery knot 3 is identical with corresponding embodiment.Other knots
Connecting relation between structure layer and the thickness and structure sheaf of structure sheaf is identical with corresponding embodiment.
Embodiment 5
In embodiment 1~3 more than, middle battery knot 3 is amorphous silicon germanium thin film battery knot, amorphous silicon germanium thin film battery knot
Including p-, i-, n- layer, p- layers are p-type semiconductive thin films, and i- layers are intrinsic type amorphous silicon germanium semiconductor films, and n- layers are n-type
Semiconductive thin film, p- layers are plated in the upper surface of bottom battery knot 6, and i- layers are plated in p- layers upper surface, and n- layers are plated in i- layers upper surface.Middle electricity
The thickness of pond knot 3 is same as Example 1.Connecting relation and phase between other structures layer and the thickness and structure sheaf of structure sheaf
The embodiment answered is identical.
Embodiment 6
In embodiment 1~3 more than, middle battery knot 3 is nanometer germanium-silicon film battery knot, nanometer germanium-silicon film battery knot
Including p-, i-, n- layer, p- layers are p-type semiconductive thin films, and i- layers are Intrinsical nanometer silicon germanium semiconductor films, and n- layers are n-type
Semiconductive thin film, p- layers are plated in the upper surface of bottom battery knot 6, and i- layers are plated in p- layers upper surface, and n- layers are plated in i- layers upper surface, this reality
The thickness for applying the middle battery knot 3 of example is 1000nm, and the thickness of middle battery knot 3 is alternatively 1500nm, and the thickness of middle battery knot 3 may be used also
Think 2000nm, arbitrarily chosen in the range of 1000~2000nm.The thickness and structure sheaf of other structures layer and structure sheaf it
Between connecting relation it is identical with corresponding embodiment.
Embodiment 7
In embodiment 1~6 more than, the battery knot 3 in the plating of the upper surface of bottom battery knot 5, the plating membrane material of middle battery knot 3
Material and thickness are identical with corresponding embodiment, conductive semi reflective layer 4 among the upper surface plating of middle battery knot 3, and middle conductive half
Reflector layer 4 has good translucency in long wavelength's section, has preferable reflective, middle conductive semi reflective layer in short-wave band
4 upper surface plating top battery knot 2, connecting relation between other structures layer and the thickness and structure sheaf of structure sheaf with it is corresponding
Embodiment is identical.
Embodiment 8
In embodiment 1~6 more than, the conductive semi reflective layer 4 among the plating of the upper surface of bottom battery knot 5 is middle conductive
Battery knot 3 in the upper surface plating of semi reflective layer 4, the Coating Materials and thickness of middle battery knot 3 are identical with corresponding embodiment, in
The conductive semi reflective layer 4 in one layer of centre is plated in the upper surface of battery knot 3 again, and middle conductive semi reflective layer 4 has fine in long wavelength's section
Translucency, there is preferable reflective in short-wave band, the upper surface plating top battery knot 2 of middle conductive semi reflective layer 4 is other
Connecting relation between structure sheaf and the thickness and structure sheaf of structure sheaf is identical with corresponding embodiment.
Embodiment 9
In embodiment 1~8 more than, the upper surface plating top battery knot 2 of battery knot 5 bottom of at, the present embodiment is without middle battery
Knot, the structure of top battery knot 2 is same as Example 1, and top battery knot 2 is connected with bottom battery knot 5, substrate 7, back electrode 6, preceding electrode
1 is same as Example 1.
Embodiment 10
In embodiment 1~8 more than, the conductive semi reflective layer 4 among the plating of the upper surface of bottom battery knot 5 is middle conductive
Battery knot 3 in 3 knots is plated in the upper surface of semi reflective layer 4, the Coating Materials and thickness and corresponding embodiment of battery knot 3 in often tying
Identical, the upper surface plating top battery knot 2 of battery knot 3 in a most upper knot, the structure of top battery knot 2 is same as Example 1, pushes up battery
Knot 2 is connected with battery knot 3, bottom battery knot 5 in 3 knots, and substrate 7, back electrode 6, preceding electrode 1 are same as Example 1.
Embodiment 11
In embodiment 1~8 more than, the conductive semi reflective layer 4 among the plating of the upper surface of bottom battery knot 5 is middle conductive
Battery knot 3 in 5 knots is plated in the upper surface of semi reflective layer 4, the Coating Materials and thickness and corresponding embodiment of battery knot 3 in often tying
Identical, the upper surface plating top battery knot 2 of battery knot 3 in a most upper knot, the structure of top battery knot 2 is same as Example 1, pushes up battery
Knot 2 is connected with middle battery knot 3, bottom battery knot 5, and substrate 7, back electrode 6, preceding electrode 1 are same as Example 1.
Embodiment 12
In embodiment 1~11 more than, bottom battery knot 5, the bottom battery knot of the present embodiment are coated with the upper surface of back electrode 6
5 are made up of p-type Cadimium telluride thin film and cadmium sulfide-zinc sulphide alloy firm, and p-type Cadimium telluride thin film is plated in the upper surface of back electrode 6,
Upper surface plating cadmium sulfide-zinc sulphide alloy firm of p-type Cadimium telluride thin film, cadmium sulfide-zinc sulphide alloy firm formula
The material that CdxZn1-xS is represented forms, 0≤x in formula<1, the present embodiment x are 0.5, i.e. Cd0.5Zn0.5S, cadmium sulfide-zinc sulphide close
The thickness of gold thin film is 20nm, also greater than 20nm.Connection between other structures layer and the thickness and structure sheaf of structure sheaf
Relation is identical with corresponding embodiment.
Embodiment 13
In embodiment 1~11 more than, bottom battery knot 5, the bottom battery knot of the present embodiment are coated with the upper surface of back electrode 6
5 are made up of p-type Cadimium telluride thin film and cadmium sulfide-zinc sulphide alloy firm, and p-type Cadimium telluride thin film is plated in the upper surface of back electrode 6,
Upper surface plating cadmium sulfide-zinc sulphide alloy firm of p-type Cadimium telluride thin film, cadmium sulfide-zinc sulphide alloy firm formula
The material that CdxZn1-xS is represented forms, 0≤x in formula<1, the present embodiment x are 0, i.e. ZnS, cadmium sulfide-zinc sulphide alloy firm
Thickness is 20nm, also greater than 20nm.Connecting relation and phase between other structures layer and the thickness and structure sheaf of structure sheaf
The embodiment answered is identical.
Embodiment 14
In embodiment 1~11 more than, bottom battery knot 5, the bottom battery knot of the present embodiment are coated with the upper surface of back electrode 6
5 are made up of p-type Cadimium telluride thin film and cadmium sulfide-zinc sulphide alloy firm, and p-type Cadimium telluride thin film is plated in the upper surface of back electrode 6,
Upper surface plating cadmium sulfide-zinc sulphide alloy firm of p-type Cadimium telluride thin film, cadmium sulfide-zinc sulphide alloy firm formula
The material that CdxZn1-xS is represented forms, 0≤x in formula<1, x is 0.9 in formula, i.e. Cd0.9Zn0.1S, cadmium sulfide-vulcanization kirsite are thin
The thickness of film is 20nm, also greater than 20nm.Connecting relation between other structures layer and the thickness and structure sheaf of structure sheaf
It is identical with corresponding embodiment.To be cadmium sulphide film when x is 1, it is same as the prior art
Embodiment 15
In embodiment 1~14 more than, substrate 7 is that the surface that thickness is 1mm is coated with the polyimide-based of metallic film
Bottom, can also use thickness to be coated with the polyvinyl fluoride substrate of metallic film for 1mm surface, can also use surface of the thickness for 1mm
It is coated with metallic film density ＞ 1.55g/cm3Polyvinyl chloride substrate, the thickness of different materials substrate 7 is no more than 2mm, Qi Tajie
Connecting relation between structure layer and the thickness and structure sheaf of structure sheaf is identical with corresponding embodiment.The substrate 7 of this structure,
Flexible, light weight, unit mass generating efficiency is high, and prepared solar cell can be crimped, can carried with.
Claims (1)
1. a kind of cadmium telluride-silica-base film composite solar battery, it is made up of the connection of following parts：In substrate (7) upper surface
Be provided with back electrode (6), back electrode (6) upper surface is provided with bottom battery knot (5), bottom battery knot (5) by p-type Cadimium telluride thin film,
N-type cadmium sulfide-zinc sulphide alloy firm is formed, and its formula of is CdxZn1-xS, x is 0.5 in formula, and p-type Cadimium telluride thin film is set
Put in back electrode (6) upper surface, n-type cadmium sulfide-zinc sulphide alloy firm is arranged on p-type Cadimium telluride thin film upper surface, bottom electricity
Pond knot (5) upper surface is provided with battery knot (3) in 0~5 knot, and middle battery knot (3) upper surface is set and bottom battery knot (5) and middle electricity
The top battery knot (2) of pond knot (3) series connection, the upper surface of top battery knot (2) are provided with preceding electrode (1), in bottom battery knot (5) with
Middle conductive semi reflective layer (4) is provided between battery knot (3) and/or between middle battery knot (3) and top battery knot (2), its
It is characterised by：The surface that described substrate (7) is thickness no more than 2mm is coated with the high polymer material substrate of metallic film, high score
Sub- material is polyimides, polyvinyl fluoride, density ＞ 1.55g/cm3Polyvinyl chloride in any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210165802.9A CN102751373B (en) | 2012-05-25 | 2012-05-25 | Cadmium telluride silica-base film composite solar battery |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210165802.9A CN102751373B (en) | 2012-05-25 | 2012-05-25 | Cadmium telluride silica-base film composite solar battery |
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| CN102751373B true CN102751373B (en) | 2018-01-12 |
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| CN102983204B (en) * | 2012-12-18 | 2015-09-30 | 深圳市创益科技发展有限公司 | A kind of three knot overlapping thin film solar battery and manufacture methods thereof |
| CN106508501A (en) * | 2016-12-15 | 2017-03-22 | 深圳市和光立源新能源发展有限公司 | Plant factory with polycompound photovoltaic module |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4686323A (en) * | 1986-06-30 | 1987-08-11 | The Standard Oil Company | Multiple cell, two terminal photovoltaic device employing conductively adhered cells |
| CN1547260A (en) * | 2003-12-17 | 2004-11-17 | 华南理工大学 | A thin-film solar cell and method for preparing same |
| CN101772845A (en) * | 2007-09-25 | 2010-07-07 | 第一太阳能有限公司 | photovoltaic devices including heterojunctions |
-
2012
- 2012-05-25 CN CN201210165802.9A patent/CN102751373B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4686323A (en) * | 1986-06-30 | 1987-08-11 | The Standard Oil Company | Multiple cell, two terminal photovoltaic device employing conductively adhered cells |
| CN1547260A (en) * | 2003-12-17 | 2004-11-17 | 华南理工大学 | A thin-film solar cell and method for preparing same |
| CN101772845A (en) * | 2007-09-25 | 2010-07-07 | 第一太阳能有限公司 | photovoltaic devices including heterojunctions |
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