CN1547260A - A thin-film solar cell and method for preparing same - Google Patents

Abstract

The invention discloses a kind of film solar energy battery and the manufacturing method. The battery is made up of a substrate, polar, a p-type copper indium selenium layer, an n-type cadmium sulfide layer, a p-type multi-crystal silicon layer, an n-type multi-crystal silicon layer and the polar stack. The manufacturing method of the invention is carried on with following steps: 1. uses magnetic control splattering and vacuum selenide quenching method to produce p-type copper indium selenium (GIS) film; 2. n-type cadmium sulfide (CdS) is generated on the p-type copper indium selenium (CIS) with vacuum evaporating method and forms the copper indium selenium/ cadmium sulfide (CIS/CdS) compound structure; 3. The p-type multi-crystal silicon layer and the n-type multi-crystal silicon layer are formed on the compound structure with PCVD process and metal leading solid phase crystallization method; 4. The film solar energy battery of multi-crystal silicon-copper indium selenium compound structure is formed.

Description

A kind of thin-film solar cells and preparation method thereof

Technical field

The present invention relates to a kind of thin-film solar cells and preparation method thereof.

Background technology

Solar cell can directly be transformed into electric energy with solar energy.Large-scale solar power generation can solve the demand of special occasions such as the particularly energy problem of remote mountain areas and outdoor sports of areas without electricity, field work in the recent period.In the long term,, not only can reach the purpose of environmental protection, and can progressively change traditional energy resource structure if solar cell can large-scale popularization be used, to alleviate energy shortage in the daily life, improving the ecological environment is significant.

Prevailing solar cell is a silica-based solar cell on present technical maturation, the market, and wherein crystal silicon solar energy battery is because its expensive production cost and complicated preparation technology are the major failures of wideling popularize; Though amorphous silicon thin-film solar cell has superiority than the former on cost and technology, because the intrinsic metastable state of material and the characteristic of many defectives cause the stability of battery lower, the large tracts of land photoelectric conversion efficiency is difficult to further raising.

Summary of the invention

The objective of the invention is to overcome the shortcoming of silica-based solar cell and amorphous silicon thin-film solar cell, provide that a kind of cost is low, the preparation method is simple, good stability, to high thin-film solar cells of the absorption rate of solar spectrum and photoelectric conversion efficiency and preparation method thereof.

Thin-film solar cells of the present invention is made of substrate, electrode, p type copper indium selenium layer, n type cadmium sulfide layer, p type polysilicon layer, n type polysilicon layer and polar stack successively.

Above-mentioned copper indium selenium layer can be abbreviated as the CIS layer, and cadmium sulfide layer can be abbreviated as the CdS layer.

The preparation method of thin-film solar cells of the present invention carries out according to the following step:

(1) adopts magnetron sputtering to add vacuum selenizing method for annealing and on substrate, prepare p type copper indium diselenide (CIS) film;

(2) form copper indium diselenide/cadmium sulfide (CIS/CdS) composite construction with vacuum evaporation method growing n-type cadmium sulfide (CdS) layer on p type copper indium diselenide (CIS) film;

(3) on copper indium diselenide/cadmium sulfide (CIS/CdS) composite construction, adopt PCVD technology and metal inducement solid phase crystallization method to prepare p type polysilicon layer, n type polysilicon layer;

(4) thin-film solar cells of formation polysilicon one copper indium diselenide lamination composite construction.

In order to resolve the problem that combines of cadmium sulfide (CdS) layer and polysilicon layer, between above-mentioned steps (2) and (3), on cadmium sulfide (CdS) layer, plate the aluminium of one deck nanometer bed thickness earlier with the vacuum thermal evaporation method, solved cadmium sulfide (CdS) layer so on the one hand and combined problem with the boundary face of polysilicon layer, the while aluminium lamination is again as the metal of inducing of polysilicon metal inducement solid phase crystallization.

Polysilicon membrane is made of many little crystal grain that differ in size, have different high preferred orientations.Many performance parameters of high-quality semiconductor polycrystal silicon thin film are the advantages that integrates crystalline silicon material and hydrogen amorphous silicon alloy film material.It has better photosensitivity, visible luminous energy is effectively absorbed in long-wave band, has the light durability the same with crystalline silicon again, is considered to a kind of desirable solar cell material of efficient, low consumption.On the other hand, the polysilicon membrane of big crystal grain has the high mobility comparable with crystalline silicon.Theoretical Calculation shows that a-Si/Poly-Si stacked solar cell, cascade solar cell efficient can reach 28%.At present, the STAR structure polycrystalline silicon solar cell of Kaneka company design, efficient has reached 10.7%, and do not have amorphous silicon intrinsic photo attenuation phenomenon.And the polycrystalline silicon solar cell of another kind of soi structure has obtained the efficient up to 14.22%.H.Morikawa has made efficient especially up to 16% polycrystalline silicon solar cell sample in the laboratory.

Copper indium diselenide (CIS) is an a kind of I-III-VI family ternary semiconductor material on the other hand, the hetero-junction thin-film solar cell that it and cadmium sulfide (CdS) constitute is the polycrystal film battery that grows up from early 1980s, have cheapness, efficient, the stability and the stronger space radiation resistance that are bordering on single crystal silicon solar cell, from efficient, reached 18.8% to the efficient of battery in 2000.

The present invention compares with existing solar cell, because it combines the advantage of polycrystal silicon cell and copper indium diselenide battery, therefore has following advantage:

1, raising is to the absorption rate of solar spectrum;

2, adopt laminated construction, improve photoelectric conversion efficiency;

3, employing inexpensive substrate material and thin-film material cheaply, the cost of reduction solar cell, easy to utilize.

Description of drawings

Fig. 1 is the disconnected structural representation of thin-film solar cells layer of the present invention.

Embodiment

Thin-film solar cells of the present invention is made of substrate 1, electrode 201, p type copper indium diselenide (CIS) layer 3, n type cadmium sulfide (CdS) layer 4, p type polysilicon layer 6, n type polysilicon layer 7 and electrode 202 laminations successively.

The preparation method of thin-film solar cells of the present invention carries out according to the following step:

(1) adopts magnetron sputtering to add vacuum selenizing method for annealing and on substrate, prepare p type copper indium diselenide (CIS) film;

(2) form copper indium diselenide/cadmium sulfide (CIS/CdS) composite construction with vacuum evaporation method growing n-type cadmium sulfide (CdS) layer on p type copper indium diselenide (CIS) film;

(3) on copper indium diselenide/cadmium sulfide (CIS/CdS) composite construction, adopt PCVD technology and metal inducement solid phase crystallization method to prepare p type polysilicon layer, n type polysilicon layer;

(4) form polysilicon--the thin-film solar cells of copper indium diselenide lamination composite construction.

In order to resolve the problem that combines of cadmium sulfide (CdS) layer and polysilicon layer, between above-mentioned steps (2) and (3), on cadmium sulfide (CdS) layer, plate the aluminium 5 of one deck nanometer bed thickness earlier with the vacuum thermal evaporation method, solved cadmium sulfide (CdS) layer so on the one hand and combined problem with the boundary face of polysilicon layer, the while aluminium lamination is again as the metal of inducing of polysilicon metal inducement solid phase crystallization.

Claims (3)

1. a thin-film solar cells is characterized in that it is made of substrate (1), electrode (201), p type copper indium selenium layer (3), n type cadmium sulfide layer (4), p type polysilicon layer (6), n type polysilicon layer (7) and electrode (202) lamination successively.

2. the preparation method of claim 1 thin-film solar cells is characterized in that carrying out according to the following step:

(1) adopts magnetron sputtering to add vacuum selenizing method for annealing and on substrate, prepare p type copper indium diselenide film;

(2) form copper indium diselenide/cadmium sulfide composite construction with vacuum evaporation method growing n-type cadmium sulfide layer on p type copper indium diselenide film;

(3) on copper indium diselenide/cadmium sulfide composite construction, adopt PCVD technology and metal inducement solid phase crystallization method to prepare p type polysilicon layer, n type polysilicon layer;

(4) form polysilicon--the thin-film solar cells of copper indium diselenide lamination composite construction.

3. the preparation method of thin-film solar cells according to claim 2 is characterized in that between step (2) and (3), plates the aluminium (5) of one deck nanometer bed thickness on cadmium sulfide (CdS) layer earlier with the vacuum thermal evaporation method.