CN217280791U

CN217280791U - HJT solar cell structure with double-layer TCO conductive film

Info

Publication number: CN217280791U
Application number: CN202122776189.1U
Authority: CN
Inventors: 柏爱玉; 郭万东; 王可胜; 何伟; 董培才; 李寅
Original assignee: Chinaland Solar Energy Co Ltd
Current assignee: Chinaland Solar Energy Co Ltd
Priority date: 2021-11-15
Filing date: 2021-11-15
Publication date: 2022-08-23
Anticipated expiration: 2031-11-15

Abstract

The utility model belongs to the field of HJT solar cells, in particular to a HJT solar cell structure with double-layer TCO conductive films, which comprises a silicon substrate, a P-N junction, a purification layer, a hole extraction transmission layer, a first TCO conductive film, a second TCO conductive film and an antireflection layer are sequentially arranged on one side of an illuminated surface of the silicon substrate from inside to outside, a conductive electrode is arranged on the antireflection layer, and one end of the conductive electrode penetrates through the antireflection layer, the second TCO conductive film and the first TCO conductive film and is contacted with the hole extraction transmission layer; the utility model provides high HJT solar cell's photoelectric conversion efficiency adopts double-deck TCO conductive film for reduce lateral transfer resistance and contact resistance, realize high mobility transmissivity and low contact, adopt the hole to draw the transmission layer simultaneously, improve the inside voltage of HJT solar cell and electric current, and cooperation antireflection layer countervail PID effect and show, guarantee HJT solar cell's battery stable performance, reduce energy loss.

Description

HJT solar cell structure with double-layer TCO conductive film

Technical Field

The utility model relates to a HJT solar cell field especially relates to a HJT solar cell structure with double-deck TCO conductive film.

Background

With the rapid development of the technology, the conversion efficiency of the crystalline silicon solar cell is improved year by year. In the current photovoltaic industry, the conversion efficiency of monocrystalline silicon solar cells has reached more than 20%, and the conversion efficiency of polycrystalline silicon solar cells has reached more than 18.5%. However, the silicon-based solar cells produced in large scale with conversion efficiency of 22% or more are only the back contact solar cells (IBC) of SunPower corporation in usa and the amorphous silicon/crystalline silicon Heterojunction solar cells (HJT) with Intrinsic thin layers of japan. Compared with the IBC solar cell, the HJT cell has the advantages of less energy consumption, simple process flow, small temperature coefficient and the like, and the advantages are also the reasons that the HJT solar cell can be distinguished from a plurality of high-efficiency silicon-based solar cell schemes.

Due to the fact that existing solar cell technical equipment is imperfect, photoelectric conversion efficiency in existing solar cells is low, energy loss inside the existing solar cells is prone to being caused, and stability of service performance of a solar cell panel is not guaranteed.

In order to solve the above problems, the present application provides an HJT solar cell structure with a double-layer TCO conductive film.

Disclosure of Invention

Objects of the invention

For solving the technical problem who exists among the background art, the utility model provides a HJT solar cell structure with double-deck TCO conductive film, the photoelectric conversion efficiency that has improved HJT solar cell has, adopt double-deck TCO conductive film, be used for reducing horizontal transmission resistance and contact resistance, realize high mobility transmissivity and low contact, adopt the hole to draw the transmission layer simultaneously, improve inside voltage and the electric current of HJT solar cell, and cooperation antireflection layer countermeasures the PID effect and is showing, guarantee HJT solar cell's battery stable performance, reduce energy loss's characteristics.

(II) technical scheme

In order to solve the problem, the utility model provides a HJT solar cell structure with double-deck TCO conductive film, including the silicon substrate, the sensitive surface one side of silicon substrate has set gradually P-N knot, purification layer, hole and has drawed transmission layer, first TCO conductive film, second TCO conductive film and antireflection layer from inside to outside, be equipped with conductive electrode on the antireflection layer, second TCO conductive film and first TCO conductive film are passed to conductive electrode's one end to draw the transmission layer with the hole and contact, the back of the body plain noodles one side of silicon substrate has set gradually ultra-thin tunneling SiO2, phosphorus doping N type thin layer and metal electrode from inside to outside.

Further, the thickness of the first TCO conductive film is larger than that of the second TCO conductive film.

Further, the hole extraction transport layer is a transition metal oxide material layer including a material layer in which one or more materials of molybdenum oxide, tungsten oxide, vanadium oxide, and rhenium oxide are mixed.

Furthermore, the material of the antireflection layer is SINX.

Further, the silicon substrate is an n-type silicon wafer.

The above technical scheme of the utility model following profitable technological effect has: the utility model provides high HJT solar cell's photoelectric conversion efficiency adopts double-deck TCO conductive film for reduce lateral transfer resistance and contact resistance, realize high mobility transmissivity and low contact, adopt the hole to draw the transport layer simultaneously, improve the inside voltage and the electric current of HJT solar cell, and cooperation antireflection layer countermeasures the PID effect and is showing, guarantees HJT solar cell's battery stable performance, reduces energy loss.

Drawings

Fig. 1 is a schematic structural diagram of the present invention.

In the figure: 1. a silicon substrate; 2. a P-N junction; 3. a purification layer; 4. a hole extraction transport layer; 5. a first TCO conductive film; 6. a second TCO conductive film; 7. an antireflection layer; 8. a conductive electrode; 9. ultrathin tunneling SiO 2; 10. doping the n-type thin layer with phosphorus; 11. and a metal electrode.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings in combination with the following embodiments. It should be understood that the description is intended to be illustrative only and is not intended to limit the scope of the present invention. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.

As shown in fig. 1, the utility model provides a HJT solar cell structure with double-layer TCO conductive film, including silicon substrate 1, silicon substrate 1 is N type silicon chip, P-N junction 2, purification layer 3, hole extraction transmission layer 4, first TCO conductive film 5, second TCO conductive film 6 and antireflection layer 7 have been set gradually to sensitive surface one side of silicon substrate 1 from inside to outside, be equipped with conducting electrode 8 on antireflection layer 7, one end of conducting electrode 8 passes antireflection layer 7, second TCO conductive film 6 and first TCO conductive film 5 to with hole extraction transmission layer 4 contact, ultra-thin tunneling SiO29, phosphorus-doped N type thin layer 10 and metal electrode 11 have been set gradually from inside to outside on the shady surface one side of silicon substrate 1;

the material of the antireflection layer 7 is SINX, when the refractive index is less than 2.05, the anti-PID effect of the battery piece is poor, and when the refractive index is more than 2.16, the anti-PID effect is obvious; namely, the process of the antireflection layer 7 is to achieve higher photoelectric conversion efficiency and meet the effect of PID resistance, and the refractive index of the SiNx film battery piece is controlled to be 2.16 +/-0.02; namely, the preferred flow ratio NH3/SiH4 of the deposition 1 is 4.83, the preferred flow ratio NH3/SiH4 of the deposition 2 is 13.33, the appearance of the battery piece is normal under the mixture ratio, the electrical property stability is good, and meanwhile, the attenuation of the component after 300 hours of anti-PID test is less than 5 percent;

it should be noted that, the thickness of the first TCO conductive film 5 is greater than that of the second TCO conductive film 6, in one embodiment, the doping concentration of the first TCO conductive film 5 is 1.5e20cm-3, the thickness is 80nm, the doping concentration of the second TCO conductive film 6 is 3e20cm-3, the thickness is 20nm, the side close to the silicon substrate 1 has a low doping concentration, and the thickness is thicker, so as to ensure high mobility and transmittance, the side close to the conductive electrode 8 has a high doping concentration, and the thickness is thinner, so as to reduce lateral transmission resistance and contact resistance, achieve high mobility transmittance and low contact, and improve the photoelectric conversion efficiency of the HJT solar cell;

it should be further noted that the hole extraction transport layer 4 is a transition metal oxide material layer, the transition metal oxide material layer includes a material layer formed by mixing one or more of molybdenum oxide, tungsten oxide, vanadium oxide, and rhenium oxide, and by providing the hole extraction transport layer 4, the conductive electrode 8 is in contact with the hole extraction transport layer 4, so as to improve the voltage and current inside the HJT solar cell, and further improve the photoelectric conversion efficiency of the HJT solar cell.

The foregoing shows and describes the general principles, essential features, and advantages of the invention. It should be understood by those skilled in the art that the present invention is not limited by the above embodiments, and the description in the above embodiments and the description is only preferred examples of the present invention, and is not intended to limit the present invention, and that the present invention can have various changes and modifications without departing from the spirit and scope of the present invention, and these changes and modifications all fall into the scope of the claimed invention. The scope of the invention is defined by the appended claims and equivalents thereof.

Claims

1. The HJT solar cell structure with the double-layer TCO conductive film comprises a silicon substrate (1) and is characterized in that a P-N junction (2), a purification layer (3), a hole extraction and transmission layer (4), a first TCO conductive film (5), a second TCO conductive film (6) and an antireflection layer (7) are sequentially arranged on one side of a light receiving surface of the silicon substrate (1) from inside to outside, a conductive electrode (8) is arranged on the antireflection layer (7), one end of the conductive electrode (8) penetrates through the antireflection layer (7), the second TCO conductive film (6) and the first TCO conductive film (5) and is in contact with the hole extraction and transmission layer (4), and an ultrathin tunneling SiO2 (9), a phosphorus-doped N-type thin layer (10) and a metal electrode (11) are sequentially arranged on one side of a backlight surface of the silicon substrate (1) from inside to outside.

2. The HJT solar cell structure with dual TCO conductive film according to claim 1, wherein the thickness of the first TCO conductive film (5) is greater than the thickness of the second TCO conductive film (6).

3. The HJT solar cell structure with a double TCO conductive film according to claim 1, wherein the hole extraction transport layer (4) is a transition metal oxide material layer.

4. The HJT solar cell structure with a double TCO conductive film according to claim 1, wherein the material of the anti-reflective layer (7) is SINX.

5. The HJT solar cell structure with a double TCO conductive film according to claim 1, wherein the silicon substrate (1) is an n-type silicon wafer.