CN116802804A - 半导体装置 - Google Patents

半导体装置 Download PDF

Info

Publication number
CN116802804A
CN116802804A CN202180092343.3A CN202180092343A CN116802804A CN 116802804 A CN116802804 A CN 116802804A CN 202180092343 A CN202180092343 A CN 202180092343A CN 116802804 A CN116802804 A CN 116802804A
Authority
CN
China
Prior art keywords
gate
electrode
transistor
trench
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180092343.3A
Other languages
English (en)
Chinese (zh)
Inventor
佐田诚
宅间彻
高桥俊太郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of CN116802804A publication Critical patent/CN116802804A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08142—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H03K17/122—Modifications for increasing the maximum permissible switched current in field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/148—VDMOS having built-in components the built-in components being breakdown diodes, e.g. Zener diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN202180092343.3A 2021-02-01 2021-11-29 半导体装置 Pending CN116802804A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021014497 2021-02-01
JP2021-014497 2021-02-01
PCT/JP2021/043544 WO2022163113A1 (ja) 2021-02-01 2021-11-29 半導体装置

Publications (1)

Publication Number Publication Date
CN116802804A true CN116802804A (zh) 2023-09-22

Family

ID=82654351

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180092343.3A Pending CN116802804A (zh) 2021-02-01 2021-11-29 半导体装置

Country Status (5)

Country Link
US (1) US12381548B2 (https=)
JP (1) JPWO2022163113A1 (https=)
CN (1) CN116802804A (https=)
DE (1) DE112021006324T5 (https=)
WO (1) WO2022163113A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024041277A (ja) * 2022-09-14 2024-03-27 ローム株式会社 半導体装置、電子機器、及び車両
EP4415263A1 (en) * 2023-02-07 2024-08-14 Infineon Technologies Austria AG Power switch assembly with co-packaged protection function
WO2025089229A1 (ja) * 2023-10-25 2025-05-01 ローム株式会社 アクティブクランプ回路、半導体装置、電子機器及び車両

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4398719B2 (ja) * 2003-12-25 2010-01-13 株式会社東芝 半導体装置
DE102005038231B3 (de) * 2005-08-12 2007-04-12 Infineon Technologies Ag Verfahren und Vorrichtung zum Einschalten einer Spannungsversorgung einer Halbleiterschaltung und entsprechende Halbleiterschaltung
JP2007202317A (ja) * 2006-01-27 2007-08-09 Rohm Co Ltd チャージポンプ回路及びこれを備えた電気機器
JP6237183B2 (ja) * 2013-12-09 2017-11-29 セイコーエプソン株式会社 静電気保護回路及び半導体集積回路装置
CN110768205B (zh) 2016-04-28 2022-02-25 罗姆股份有限公司 过电流保护电路
US9887011B1 (en) * 2017-02-06 2018-02-06 Macronix International Co., Ltd. Memory with controlled bit line charging
WO2020130141A1 (ja) * 2018-12-21 2020-06-25 ローム株式会社 半導体装置
US11764758B2 (en) * 2019-06-06 2023-09-19 Rohm Co., Ltd. Semiconductor device
WO2021024813A1 (ja) 2019-08-02 2021-02-11 ローム株式会社 半導体装置
DE102019128072B4 (de) * 2019-10-17 2021-11-18 Infineon Technologies Ag Transistorbauelement mit einem variierenden flächenbezogenen spezifischen gaterunnerwiderstand
US11509230B2 (en) * 2019-11-07 2022-11-22 Texas Instruments Incorporated Power stage controller for switching converter with clamp
JP7676739B2 (ja) * 2020-07-30 2025-05-15 富士電機株式会社 集積回路及び電源回路

Also Published As

Publication number Publication date
JPWO2022163113A1 (https=) 2022-08-04
WO2022163113A1 (ja) 2022-08-04
US20240088886A1 (en) 2024-03-14
US12381548B2 (en) 2025-08-05
DE112021006324T5 (de) 2023-10-12

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