JPWO2022163113A1 - - Google Patents
Info
- Publication number
- JPWO2022163113A1 JPWO2022163113A1 JP2022578082A JP2022578082A JPWO2022163113A1 JP WO2022163113 A1 JPWO2022163113 A1 JP WO2022163113A1 JP 2022578082 A JP2022578082 A JP 2022578082A JP 2022578082 A JP2022578082 A JP 2022578082A JP WO2022163113 A1 JPWO2022163113 A1 JP WO2022163113A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
- H03K17/08142—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/12—Modifications for increasing the maximum permissible switched current
- H03K17/122—Modifications for increasing the maximum permissible switched current in field-effect transistor switches
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
- H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/393—Body regions of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
- H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/141—VDMOS having built-in components
- H10D84/148—VDMOS having built-in components the built-in components being breakdown diodes, e.g. Zener diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021014497 | 2021-02-01 | ||
| PCT/JP2021/043544 WO2022163113A1 (ja) | 2021-02-01 | 2021-11-29 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022163113A1 true JPWO2022163113A1 (https=) | 2022-08-04 |
| JPWO2022163113A5 JPWO2022163113A5 (https=) | 2023-10-26 |
Family
ID=82654351
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022578082A Pending JPWO2022163113A1 (https=) | 2021-02-01 | 2021-11-29 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12381548B2 (https=) |
| JP (1) | JPWO2022163113A1 (https=) |
| CN (1) | CN116802804A (https=) |
| DE (1) | DE112021006324T5 (https=) |
| WO (1) | WO2022163113A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2024041277A (ja) * | 2022-09-14 | 2024-03-27 | ローム株式会社 | 半導体装置、電子機器、及び車両 |
| EP4415263A1 (en) * | 2023-02-07 | 2024-08-14 | Infineon Technologies Austria AG | Power switch assembly with co-packaged protection function |
| WO2025089229A1 (ja) * | 2023-10-25 | 2025-05-01 | ローム株式会社 | アクティブクランプ回路、半導体装置、電子機器及び車両 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005191221A (ja) * | 2003-12-25 | 2005-07-14 | Toshiba Corp | 半導体装置 |
| JP2007202317A (ja) * | 2006-01-27 | 2007-08-09 | Rohm Co Ltd | チャージポンプ回路及びこれを備えた電気機器 |
| WO2020130141A1 (ja) * | 2018-12-21 | 2020-06-25 | ローム株式会社 | 半導体装置 |
| WO2020246537A1 (ja) * | 2019-06-06 | 2020-12-10 | ローム株式会社 | 半導体装置 |
| WO2021024813A1 (ja) * | 2019-08-02 | 2021-02-11 | ローム株式会社 | 半導体装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005038231B3 (de) * | 2005-08-12 | 2007-04-12 | Infineon Technologies Ag | Verfahren und Vorrichtung zum Einschalten einer Spannungsversorgung einer Halbleiterschaltung und entsprechende Halbleiterschaltung |
| JP6237183B2 (ja) * | 2013-12-09 | 2017-11-29 | セイコーエプソン株式会社 | 静電気保護回路及び半導体集積回路装置 |
| CN110768205B (zh) | 2016-04-28 | 2022-02-25 | 罗姆股份有限公司 | 过电流保护电路 |
| US9887011B1 (en) * | 2017-02-06 | 2018-02-06 | Macronix International Co., Ltd. | Memory with controlled bit line charging |
| DE102019128072B4 (de) * | 2019-10-17 | 2021-11-18 | Infineon Technologies Ag | Transistorbauelement mit einem variierenden flächenbezogenen spezifischen gaterunnerwiderstand |
| US11509230B2 (en) * | 2019-11-07 | 2022-11-22 | Texas Instruments Incorporated | Power stage controller for switching converter with clamp |
| JP7676739B2 (ja) * | 2020-07-30 | 2025-05-15 | 富士電機株式会社 | 集積回路及び電源回路 |
-
2021
- 2021-11-29 CN CN202180092343.3A patent/CN116802804A/zh active Pending
- 2021-11-29 US US18/263,404 patent/US12381548B2/en active Active
- 2021-11-29 JP JP2022578082A patent/JPWO2022163113A1/ja active Pending
- 2021-11-29 WO PCT/JP2021/043544 patent/WO2022163113A1/ja not_active Ceased
- 2021-11-29 DE DE112021006324.3T patent/DE112021006324T5/de active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005191221A (ja) * | 2003-12-25 | 2005-07-14 | Toshiba Corp | 半導体装置 |
| JP2007202317A (ja) * | 2006-01-27 | 2007-08-09 | Rohm Co Ltd | チャージポンプ回路及びこれを備えた電気機器 |
| WO2020130141A1 (ja) * | 2018-12-21 | 2020-06-25 | ローム株式会社 | 半導体装置 |
| WO2020246537A1 (ja) * | 2019-06-06 | 2020-12-10 | ローム株式会社 | 半導体装置 |
| WO2021024813A1 (ja) * | 2019-08-02 | 2021-02-11 | ローム株式会社 | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022163113A1 (ja) | 2022-08-04 |
| US20240088886A1 (en) | 2024-03-14 |
| US12381548B2 (en) | 2025-08-05 |
| CN116802804A (zh) | 2023-09-22 |
| DE112021006324T5 (de) | 2023-10-12 |
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