CN1167116C - 引线接合法、声表面波设备和声表面波设备的制造方法 - Google Patents
引线接合法、声表面波设备和声表面波设备的制造方法 Download PDFInfo
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- CN1167116C CN1167116C CNB011117508A CN01111750A CN1167116C CN 1167116 C CN1167116 C CN 1167116C CN B011117508 A CNB011117508 A CN B011117508A CN 01111750 A CN01111750 A CN 01111750A CN 1167116 C CN1167116 C CN 1167116C
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- Prior art keywords
- wire
- lead
- acoustic wave
- surface acoustic
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- 238000000034 method Methods 0.000 title claims abstract description 36
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 22
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000010897 surface acoustic wave method Methods 0.000 claims description 39
- 239000008393 encapsulating agent Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000009434 installation Methods 0.000 claims description 9
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910000838 Al alloy Inorganic materials 0.000 claims description 5
- 229910018125 Al-Si Inorganic materials 0.000 claims description 4
- 229910018520 Al—Si Inorganic materials 0.000 claims description 4
- 238000005304 joining Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Classifications
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/12—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding
- B23K20/129—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding specially adapted for particular articles or workpieces
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- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
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Abstract
一种将两个连接电极与一引线超声波接合的引线接合方法。该方法用钽形成至少一个连接电极;并用断裂负荷至少为21g的金属引线和断裂应力至少为290N/mm2的金属引线中的一种金属引线来形成所述引线。还提供了声表面波设备及其制造方法。所述设备包含:封装物,它具有元件安装表面、设置在内的电极垫片,以及设置在外并电气连接到电极垫片的外部连接电极;声表面波元件,它固定在元件安装表面上并且包括压电基片、设置在所述压电基片上并由钽制成的叉指式换能器,以及电气连接到叉指式换能器并由钽制成的接合电极;和接合线,它连接在电极垫片和接合电极之间,接合线具有至少290N/mm2断裂应力和至少21g断裂负荷中的一项性能。
Description
技术领域
本发明涉及一种用于将两个电极与引线连接在一起的引线接合法、一种声表面波设备和一种声表面波设备的制造方法。
背景技术
引线接合法已经广泛应用于电气连接相互分离的电极。由于接合电极的表面涂有氧化薄膜,故而为了将接合线装到上面,必须去掉氧化薄膜。在超声波引线接合法中,将超声波振荡施加给接合线,从而通过滑动接合线消除其表面上的氧化薄膜,由此现出活性金属表面。然后,由于摩擦热和塑性流引起局部熔化、扩散等,使温度增加,从而通过金属接合实现了接合。
当将这种引线接合法应用于这样一种声表面波元件,它包含由诸如钽等比重大于压电基片比重的材料制成的电极,以激励剪切水平(″SH-型″)声表面波(拉夫波等)时,如在第5,953,433号美国专利,和第5,847,486号美国专利中所揭示的,产生了接合线未坚固地连接到声表面波元件的电极的问题。
发明内容
为了克服上述问题,本发明的较佳实施例提供了一种引线接合法,通过这种方法可将接合线坚固地连接到声表面波元件的钽电极,本发明的较佳实施例还提供了一种使用上述引线接合法形成,以具有高接合强度和高电气可靠性的声表面波设备,以及一种制造声表面波设备的方法。
依照本发明的一个方面,提供了一种将两个连接电极与一引线超声波接合的引线接合方法。所述引线接合方法包含以下步骤:由钽形成至少一个连接电极;和用断裂负荷至少为21g的金属引线和断裂应力至少为290N/mm2的金属引线中的一种金属引线来形成所述引线。
根据本发明的较佳实施例,通过使用强度大(断裂应力大)的引线,使塑性变形最小化,并将超声波能量有效施加到接合表面的钽层。因此,得到由接合线与钽层之间的金属接合引起的强接合,从而可将接合线直接可靠接合到钽层。
另外,不必形成由诸如Au或Al等材料制成的额外的电极,从而大大减少了制造步骤的数量,导致成本减少。
对于断裂负荷,接合线最好使用铝合金引线,特别是使用Al-Si引线。
最好将根据本发明的较佳实施例的引线接合法应用于声表面波设备。因此,依照本发明的另一方面,提供了一种声表面波设备。它包含:封装物,它具有元件安装表面、设置在所述封装物内的电极垫片,以及设置在所述封装物外并电气连接到所述电极垫片的外部连接电极;声表面波元件,它固定在所述元件安装表面上,所述声表面波元件包括压电基片、设置在所述压电基片上并由钽制成的叉指式换能器,以及电气连接到所述叉指式换能器并由钽制成的接合电极;和接合线,它连接在所述电极垫片和所述接合电极之间,所述接合线具有至少290N/mm2断裂应力和至少21g断裂负荷中的一项性能。因此,可在接合线和由钽层形成的接合电极之间得到大的接合强度,从而即使将当衰落的冲击施加到那里时,仍可防止接合线从接合电极去掉。
依照本发明的再一方面,还提供了一种声表面波设备的制造方法。所述方法包含以下步骤:将一声表面波元件固定在一封装物的元件安装表面上,所述封装物具有设置在内部的电极垫片,以及设置在外部并电气连接到电极垫片的外部连接电极,所述声表面波元件包括压电基片、设置在所述压电基片上并由钽制成的叉指式换能器,以及电气连接到所述叉指式换能器并由钽制成的接合电极;和在所述电极垫片和所述接合电极之间设置一接合线,通过所述接合线使所述电极垫片和所述接合电极的电气连接,所述接合线具有至少290N/mm2断裂应力以及至少21g断裂负荷中的一项性能。
为了说明本发明,附图中示出几个目前较好的形式,但是应当知道,本发明不限于示出的精细安排和手段。
从下面参照附图对较佳实施例的详细的描述,本发明的其它特点、元素、特征和优点将更加明显。
附图说明
图1是通过使用本发明的较佳实施例的引线接合法制造的声表面波设备的一个例子的截面图;
图2是示出对相对于引线断裂负荷,断裂模式中的抗拉强度和脱落率之间的关系。
具体实施方式
下面,参照附图详细解释本发明的较佳实施例。
图1示出使用根据本发明的较佳实施例的引线接合法得到的声表面波设备的一个例子。
声表面波设备最好包含封装物1,它具有元件安装表面2a和固定在封装物1的元件安装表面2a上的声表面波元件10。封装物1最好具有通过搭建底板2和侧壁4、5和6(最好由陶瓷或其它适当材料制成)而形成的腔体的形状,并形成用于外部连接的电极7和8,以便从内部延伸到外部。在该较佳实施例中,用于外部连接的电极7和8最好由Au,Cu,Al或其它适当材料制成,并在侧壁4的上表面上形成电气连接到电极7和8的电极垫片7a和8a。在侧壁6的上表面上,通过粘着、缝焊、铜焊或其它适当方法固定陶瓷或金属盖板9,以便密封在其内侧。
封装物1不限于腔体形状。可以通过将声表面波元件10固定到平面基片上,并将一盖子接合到该基片以覆盖该元件,使其内部密封而形成封装物1。
将声表面波元件10固定到封装物1的元件安装表面2a上,故在它们之间插入粘剂3。声表面波元件10最好产生SH-型声表面波,并包括由诸如钽酸锂、铌酸锂和晶体等压电材料制成的压电基片11,以及接合电极13和14。电极12、13和14最好由钽制层制成,并形成在压电基片11的表面上。通过超声波引线接合法,由接合线20和21使封装物1的接合电极13和14与电极垫片7a和8a接合在一起。接合线20和21最好由断裂负荷大约是21g或更大的金属引线制成,而在本较佳实施例中,最好使用由直径大约30um的Al-Si合金制成的引线。
当接合线的直径和断裂负荷分别是大约30um和大约21g时,其断裂应力如下所述。
直径大约30um的引线的截面积S是:S=π×(0.03)2/4mm2;因此,断裂应力=21/s
290N/mm2。
相应地,通过断裂应力大约290N/mm2的金属材料,即使当使用直径小于大约30um的引线时仍然适合执行引线接合。
根据发明人对引线接合法的研究,当由钽层构成接合电极时,难以产生塑性流,而由于接合线更软,故而大部分超声波能量传送到接合线以产生塑性流,从而能量不传送到接合表面。
相应地,虽然接合线变形大,结合到接合电极是不够的,导致引线接合失败或引线抗拉强度减小的问题。
相反,根据本发明的较佳实施例,使用断裂负荷为大约21g或更大的高强度接合线20和21,从而使接合线20和21的塑性变形最小化,因此超声波能量对接合线20和21与接合电极13和14之间的接合表面有非常有益的效果。相应地,在接合线20和21与接合电极13和14之间产生由超声波振荡引起的滑动,从而由于通过滑动产生了摩擦热,而产生局部熔化和扩散等,因此产生由金属接合达到的坚固接合。
可以将接合线20和21首先连接到电极垫片7a和8a或接合电极13和14。在上述较佳实施例中,在声表面波元件10的接合电极13和14上进行初级接合,而在封装物1的电极垫片7a和8a上进行二次接合。但是,可以在电极垫片7a和8a上进行初级接合,而在接合电极13和14上进行二次接合。
图2示出当接合线的硬度变化时对接合强度的估算。在该估算中,使用Al-1%Si,直径大约30um的引线,和具有内线凹槽形达到接合工具。为接合强度采用引线拉伸测试,测量接合强度和引线断裂模式。可见断裂模式(接合电极和接合线之间的界面中的破裂)中脱落率越高,则接合状态越差。
如从图2知道的,当引线断裂负荷大约是21g或更大时,断裂模式中不产生脱落,并且抗拉强度也非常大。由此事实,可以知道令人满意的接合状态。
在上述较佳实施例中,根据本发明的引线接合法应用于声表面波设备。但是,只要电子元件具有由钽制层制成的连接电极,本发明的接合方法也可应用于电子元件。由钽层制成的连接电极不必限于电子元件侧,它可以设置在封装物侧上。
可将由钽层制成的连接电极设置在初级和二次侧之一上。但是,最好将根据本较佳实施例的接合方法应用于初级侧上,因为超声波能量充分施加到那里。
虽然已经揭示了本发明,但是各种实施这里所揭示的原理的模式都在下面的权利要求的范围内。因此应该知道,本发明的范围仅由所附的权利要求限定。
Claims (14)
1.一种将两个连接电极与一引线超声波接合的引线接合方法,其特征在于,所述引线接合方法包含以下步骤:
由钽形成至少一个连接电极;和
用断裂负荷至少为21g的金属引线和断裂应力至少为290N/mm2的金属引线中的一种金属引线来形成所述引线。
2.如权利要求1所述的方法,其特征在于,所述引线是断裂负荷至少为21g的铝合金引线。
3.如权利要求1所述的方法,其特征在于,所述引线是Al-Si引线。
4.如权利要求1所述的方法,其特征在于,所述引线是断裂应力至少为290N/mm2的铝合金引线。
5.一种声表面波设备,其特征在于,包含:
封装物,它具有元件安装表面、设置在所述封装物内的电极垫片,以及设置在所述封装物外并电气连接到所述电极垫片的外部连接电极;
声表面波元件,它固定在所述元件安装表面上,所述声表面波元件包括压电基片、设置在所述压电基片上并由钽制成的叉指式换能器,以及电气连接到所述叉指式换能器并由钽制成的接合电极;和
接合线,它连接在所述电极垫片和所述接合电极之间,所述接合线具有至少290N/mm2断裂应力和至少21g断裂负荷中的一项性能。
6.如权利要求5所述的声表面波设备,其特征在于,所述接合线是铝合金引线。
7.如权利要求5所述的声表面波设备,其特征在于,所述接合线是Al-Si引线。
8.如权利要求5所述的声表面波设备,其特征在于,所述接合线的断裂负荷至少为21g,并且断裂应力为290N/mm2。
9.如权利要求5所述的声表面波设备,其特征在于,所述声表面波元件在所述压电基片上产生剪切水平型表面波。
10.一种声表面波设备的制造方法,其特征在于,所述方法包含以下步骤:
将一声表面波元件固定在一封装物的元件安装表面上,所述封装物具有设置在内部的电极垫片,以及设置在外部并电气连接到电极垫片的外部连接电极,所述声表面波元件包括压电基片、设置在所述压电基片上并由钽制成的叉指式换能器,以及电气连接到所述叉指式换能器并由钽制成的接合电极;和
在所述电极垫片和所述接合电极之间设置一接合线,通过所述接合线使所述电极垫片和所述接合电极的电气连接,所述接合线具有至少290N/mm2断裂应力以及至少21g断裂负荷中的一项性能。
11.如权利要求10所述的方法,其特征在于,所述接合线是铝合金引线。
12.如权利要求10所述的方法,其特征在于,所述接合线是Al-Si引线。
13.如权利要求10所述的方法,其特征在于,所述接合线的断裂负荷至少为21g,并且断裂应力为290N/mm2。
14.如权利要求10所述的方法,其特征在于,所述声表面波元件在所述压电基片上产生剪切水平型表面波。
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US3507033A (en) * | 1965-01-06 | 1970-04-21 | Western Electric Co | Ultrasonic bonding method |
US3959747A (en) * | 1975-04-30 | 1976-05-25 | Rca Corporation | Metallized lithium niobate and method of making |
JPS6159760A (ja) | 1984-08-30 | 1986-03-27 | Mitsubishi Metal Corp | 半導体装置の結線用Al合金極細線 |
GB2177639B (en) * | 1985-07-08 | 1988-12-29 | Philips Electronic Associated | Ultrasonic wire bonder and method of manufacturing a semiconductor device therewith |
US5221449A (en) * | 1990-10-26 | 1993-06-22 | International Business Machines Corporation | Method of making Alpha-Ta thin films |
FR2714200B1 (fr) * | 1993-11-25 | 1996-12-27 | Fujitsu Ltd | Dispositif à onde acoustique de surface et son procédé de fabrication. |
US5492263A (en) * | 1994-05-26 | 1996-02-20 | Delco Electronics Corp. | Method for wire bonding an aluminum wire to a lead of an electronics package |
JP3173300B2 (ja) * | 1994-10-19 | 2001-06-04 | 株式会社村田製作所 | ラブ波デバイス |
JPH08124973A (ja) | 1994-10-26 | 1996-05-17 | Fuji Electric Co Ltd | 超音波ワイヤボンディング方法 |
JP3301262B2 (ja) * | 1995-03-28 | 2002-07-15 | 松下電器産業株式会社 | 弾性表面波装置 |
JP3308759B2 (ja) * | 1995-04-10 | 2002-07-29 | 日本電気株式会社 | 弾性表面波装置 |
JPH09298442A (ja) * | 1996-03-08 | 1997-11-18 | Tdk Corp | 弾性表面波装置及びその製造方法 |
DE69718693T2 (de) * | 1996-03-08 | 2003-11-27 | Matsushita Electric Industrial Co., Ltd. | Elektronisches Bauteil und Herstellungsverfahren |
JP3464106B2 (ja) | 1996-11-28 | 2003-11-05 | 京セラ株式会社 | 弾性表面波装置 |
JP3339350B2 (ja) * | 1997-02-20 | 2002-10-28 | 株式会社村田製作所 | 弾性表面波装置 |
CA2299449C (en) * | 1997-02-23 | 2006-09-19 | Hoogovens Aluminium Walzprodukte Gmbh | High strength al-mg-zn-si alloy for welded structures and brazing application |
JPH1168504A (ja) * | 1997-08-11 | 1999-03-09 | Murata Mfg Co Ltd | 表面波装置 |
JP2001267355A (ja) * | 2000-03-17 | 2001-09-28 | Murata Mfg Co Ltd | ワイヤボンディング方法およびこのワイヤボンディング方法を用いた弾性表面波装置 |
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FR2808233B1 (fr) | 2006-05-19 |
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US6757946B2 (en) | 2004-07-06 |
GB0105752D0 (en) | 2001-04-25 |
TW503616B (en) | 2002-09-21 |
GB2361888A (en) | 2001-11-07 |
FR2808233A1 (fr) | 2001-11-02 |
US20010022484A1 (en) | 2001-09-20 |
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GB2361888B (en) | 2002-04-24 |
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