CN116618883A - 一种能显著减低电子器件软错误的低α锡膏及其制备方法 - Google Patents
一种能显著减低电子器件软错误的低α锡膏及其制备方法 Download PDFInfo
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title claims description 7
- 239000000843 powder Substances 0.000 claims abstract description 47
- 229910001128 Sn alloy Inorganic materials 0.000 claims abstract description 31
- 229910000679 solder Inorganic materials 0.000 claims abstract description 29
- 229910052718 tin Inorganic materials 0.000 claims abstract description 24
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 claims abstract description 20
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000005476 soldering Methods 0.000 claims abstract description 15
- QWVCIORZLNBIIC-UHFFFAOYSA-N 2,3-dibromopropan-1-ol Chemical compound OCC(Br)CBr QWVCIORZLNBIIC-UHFFFAOYSA-N 0.000 claims abstract description 10
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims abstract description 10
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims abstract description 10
- 230000005260 alpha ray Effects 0.000 claims abstract description 10
- 239000005011 phenolic resin Substances 0.000 claims abstract description 10
- 229920001568 phenolic resin Polymers 0.000 claims abstract description 10
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 claims abstract description 6
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 claims abstract description 6
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910001316 Ag alloy Inorganic materials 0.000 claims abstract description 4
- 229910001245 Sb alloy Inorganic materials 0.000 claims abstract description 4
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000002140 antimony alloy Substances 0.000 claims abstract description 4
- GVFOJDIFWSDNOY-UHFFFAOYSA-N antimony tin Chemical compound [Sn].[Sb] GVFOJDIFWSDNOY-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000002156 mixing Methods 0.000 claims abstract description 4
- 239000000203 mixture Substances 0.000 claims abstract description 4
- 229910000597 tin-copper alloy Inorganic materials 0.000 claims abstract description 4
- 229910001174 tin-lead alloy Inorganic materials 0.000 claims abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000003756 stirring Methods 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 230000004907 flux Effects 0.000 claims description 15
- 239000000126 substance Substances 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 9
- 239000011135 tin Substances 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052787 antimony Inorganic materials 0.000 claims description 8
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052797 bismuth Inorganic materials 0.000 claims description 6
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- 238000005303 weighing Methods 0.000 claims description 6
- 235000018783 Dacrycarpus dacrydioides Nutrition 0.000 claims description 3
- 240000007320 Pinus strobus Species 0.000 claims description 3
- 235000008578 Pinus strobus Nutrition 0.000 claims description 3
- 238000003723 Smelting Methods 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 238000000889 atomisation Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000005868 electrolysis reaction Methods 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 3
- 238000005070 sampling Methods 0.000 claims description 3
- 238000012216 screening Methods 0.000 claims description 3
- 230000002194 synthesizing effect Effects 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 240000000793 Pinus armandii Species 0.000 description 1
- 235000011612 Pinus armandii Nutrition 0.000 description 1
- LBDSXVIYZYSRII-IGMARMGPSA-N alpha-particle Chemical compound [4He+2] LBDSXVIYZYSRII-IGMARMGPSA-N 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/268—Pb as the principal constituent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3006—Ag as the principal constituent
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/302—Cu as the principal constituent
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
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- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
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Abstract
本发明公开了一种能显著减低电子器件软错误的低α锡膏,一方面提出的一种能显著减低电子器件软错误的低α锡膏,由低α射线锡合金粉末和助焊膏混合而成。其中,低α射线锡合金粉末为低α锡银合金粉末、低α锡锑合金粉末、低α锡铜合金粉末和低α锡铅合金粉末的一种或者任意两种的混合物;助焊膏包括水白松香、酚醛树脂、苯胺、三乙醇胺、二溴丙醇和异丙醇。本发明的低α锡膏,有效降低软错误,采用低阿尔法焊料,经济有效,降低软错误的发生率。
Description
技术领域
本发明涉及焊锡膏技术领域,特别涉及一种能显著减低电子器件软错误的低α锡膏及其制备方法。
背景技术
在半导体器件封装中,通常是用焊料将集成电路(IC)芯片连接到基板上,如果连接IC电路的焊料中含有α-粒子放射源会导致封装半导体器件受到损害。目前,IC电路正向着小型化高密度化及高容量化不断发展,受到来自半导体芯片附近材料的α射线的影响而导致软件错误发生的情况越来越多。因此,对焊料及锡的高纯度化和低α剂量提出了很高的要求。
软错误--由单晶硅辐射而造成设备暂时性功能故障。其中一种辐射就是封装钎料中产生的高能α粒子,为了满足现在电子设备日益增加高密度(功能性)和低功耗的需求,现代电子设备的尺寸和操作电压正不断减小。这就对封装技术和材料带来了新的挑战,缩减尺寸比例意味着在逻辑程序中电路更加密集,硅片更薄,以及非永久性存储器的电容电压更低。这种趋势导致元器件设备对软错误更加敏感,随着倒装焊和3D封装技术的发展,焊接凸点更加接近活度硅元件,这里具有短程的低能α粒子都能够诱发软错误。封装中钎料是α粒子放射的主要来源之一,因此对低α活度焊料的需求日益增长。
因此,有必要开发一种低α锡膏,以降低多级封装贴片元件焊接中软错误的发生。
发明内容
本发明的主要目的是提供一种能显著减低电子器件软错误的低α锡膏及其制备方法,以解决上述背景技术中提出的问题。
为实现上述目的,本发明一方面提出的一种能显著减低电子器件软错误的低α锡膏,由低α射线锡合金粉末和助焊膏混合而成,其中,
低α射线锡合金粉末为低α锡银合金粉末、低α锡锑合金粉末、低α锡铜合金粉末和低α锡铅合金粉末的一种或者任意两种的混合物。
优选地,助焊膏包括以下按重量百分比的组分:水白松香10%~50%、酚醛树脂10%~30%、苯胺0.01%~5%、三乙醇胺0.01%~5%和二溴丙醇0.01%~5%,其余为异丙醇。
优选地,低α射线锡合金粉末中,按质量百分比,锡1%~98%、铅0%~95%、银0.5%~5%、铜0.01%~1%、锑5%~30%。
本发明另一方面提出的一种能显著减低电子器件软错误的低α锡膏的制备方法,包括以下步骤:
步骤一,制备低α锡合金粉末
1、备纯度为99.9%及以上的金属单质,包括但不限于锡,银,铜,锑,铋,铅;
2、使用电解的方式去除金属单质中的杂质,获得纯度99.999%及以上的金属;
3、采用激光同位素方法去除金属中的释放α射线的铅和铋,利用UltraLo-1800超低本底α计数器检测α个数,得到要求的低α或超低α金属单质;
4、使用已经提纯好的低α或超低α的金属单质按照所需要求重熔炼制成不同比例的金属合金,利用UltraLo-1800超低本底α计数器检测α个数,获得低α或超低α锡合金;
5、通过超声雾化法制备锡及锡合金粉末,利用不同孔径的网晒筛选出不同粒径范围的低α或超低α锡粉或锡合金粉;
步骤二,制备助焊膏
1、将20%~50%的水白松香加入反应釜中80℃~140℃搅拌熔化;
2、加入10%~30%的酚醛树脂均匀搅拌;
3、待冷却至80℃~110℃后加入0.01%~5%苯胺,0.01%~5%的三乙醇胺及0.01%~5%的二溴丙醇均匀搅拌;
4、待冷却至40~50℃后加入异丙醇均匀搅拌并冷却至室温后;
5、使用研磨机研磨到足够细腻程度的助焊膏备用;
步骤三,合成焊锡膏,其中低α或超低α锡粉或合金粉重量占比85%-92%,助焊膏重量占比8%-15%;
1、称取重量占比8%-15%的助焊膏于锡膏罐中,利用搅拌机充分搅拌均匀;
2、称取1/2重量的锡粉或锡合金粉加入到锡膏罐中,利用搅拌机充分搅拌均匀后,加入另外1/2重量的锡粉或锡合金粉搅拌均匀;
3、手动翻底搅拌均匀;
4、搅拌机中抽真空搅拌5-15分钟;
5、抽样检测锡膏各项数据,数据OK,即可得到低α焊锡膏。
本发明的一种能显著减低电子器件软错误的低α锡膏,有效降低软错误,采用低阿尔法焊料,经济有效,降低软错误的发生率。
具体实施方式
下面将结合本发明实施例,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明的一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
需要说明,本发明实施例中所有方向性指示(诸如上、下、左、右、前、后……)仅用于解释在某一特定姿态下各部件之间的相对位置关系、运动情况等,如果该特定姿态发生改变时,则该方向性指示也相应地随之改变。
另外,在本发明中涉及“第一”、“第二”等的描述仅用于描述目的,而不能理解为指示或暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。另外,各个实施例之间的技术方案可以相互结合,但是必须是以本领域普通技术人员能够实现为基础,当技术方案的结合出现相互矛盾或无法实现时应当认为这种技术方案的结合不存在,也不在本发明要求的保护范围之内。
在本发明实施例中本发明一方面提出的一种能显著减低电子器件软错误的低α锡膏,由低α射线锡合金粉末和助焊膏混合而成。其中,低α射线锡合金粉末为低α锡银合金粉末、低α锡锑合金粉末、低α锡铜合金粉末和低α锡铅合金粉末的一种或者任意两种的混合物;
在本实施例中,低阿尔法焊料等级可以为低α级(<0.01cph/cm2)或者极低α级(<0.002cph/cm2),也可以是超极低α级(<0.001cph/cm2),此三种等级都可以制得。
助焊膏包括水白松香、酚醛树脂、苯胺、三乙醇胺、二溴丙醇和异丙醇。
实施例1:
一种能显著减低电子器件软错误的低α锡膏,包括以下按重量百分比的组分:
锡30%
铅30%
银2%
铜0.5%
锑5%
水白松香20%
酚醛树脂10%
苯胺0.5%
三乙醇胺0.5%
二溴丙醇0.5%
异丙醇1%。
实施例2:
一种能显著减低电子器件软错误的低α锡膏,包括以下按重量百分比的组分:
锡20%
铅30%
银2%
铜0.5%
锑10%
水白松香10%
酚醛树脂15%
苯胺4.5%
三乙醇胺3%
二溴丙醇3%
异丙醇2%。
实施例3:
一种能显著减低电子器件软错误的低α锡膏,包括以下按重量百分比的组分:
锡25%
铅25%
银3.4%
铜0.6%
锑15%
水白松香10%
酚醛树脂10%
苯胺2%
三乙醇胺4%
二溴丙醇2%
异丙醇3%。
对上述实施例的低α锡膏样品(SAC305)进行测试,测试结果如下表所示:
在测试过程中,最短测试市场为6h,超低辐射率样品测试需要更长的测试时间。
结果表明,本实施例的低α锡膏,能显著减低电子器件软错误。适用于多级封装贴片元件焊接。
本发明实施例另一方面提出的一种能显著减低电子器件软错误的低α锡膏的制备方法,包括以下步骤:
步骤一,制备低α锡合金粉末
1、备纯度为99.9%及以上的金属单质,包括但不限于锡,银,铜,锑,铋,铅;
2、使用电解的方式去除金属单质中的杂质,获得纯度99.999%及以上的金属;
3、采用激光同位素方法去除金属中的释放α射线的铅和铋,利用UltraLo-1800超低本底α计数器检测α个数,得到要求的低α或超低α金属单质;
4、使用已经提纯好的低α或超低α的金属单质按照所需要求重熔炼制成不同比例的金属合金,利用UltraLo-1800超低本底α计数器检测α个数,获得低α或超低α锡合金;
5、通过超声雾化法制备锡及锡合金粉末,利用不同孔径的网晒筛选出不同粒径范围的低α或超低α锡粉或锡合金粉;
步骤二,制备助焊膏
1、将20%~50%的水白松香加入反应釜中80℃~140℃搅拌熔化;
2、加入10%~30%的酚醛树脂均匀搅拌;
3、待冷却至80℃~110℃后加入0.01%~5%苯胺,0.01%~5%的三乙醇胺及0.01%~5%的二溴丙醇均匀搅拌;
4、待冷却至40~50℃后加入异丙醇均匀搅拌并冷却至室温后;
5、使用研磨机研磨到足够细腻程度的助焊膏备用;
步骤三,合成焊锡膏,其中低α或超低α锡粉或合金粉重量占比85%-92%,助焊膏重量占比8%-15%;
1、称取重量占比8%-15%的助焊膏于锡膏罐中,利用搅拌机充分搅拌均匀;
2、称取1/2重量的锡粉或锡合金粉加入到锡膏罐中,利用搅拌机充分搅拌均匀后,加入另外1/2重量的锡粉或锡合金粉搅拌均匀;
3、手动翻底搅拌均匀;
4、搅拌机中抽真空搅拌5-15分钟;
5、抽样检测锡膏各项数据,数据OK,即可得到低α焊锡膏。
以上所述仅为本发明的优选实施例,并非因此限制本发明的专利范围,凡是在本发明的发明构思下,利用本发明说明书所作的等效结构变换,或直接/间接运用在其他相关的技术领域均包括在本发明的专利保护范围内。
Claims (4)
1.一种能显著减低电子器件软错误的低α锡膏,其特征在于,由低α射线锡合金粉末和助焊膏混合而成,其中,
低α射线锡合金粉末为低α锡银合金粉末、低α锡锑合金粉末、低α锡铜合金粉末和低α锡铅合金粉末的一种或者任意两种的混合物。
2.如权利要求1所述的一种能显著减低电子器件软错误的低α锡膏,其特征在于,助焊膏包括以下按重量百分比的组分:水白松香10%~50%、酚醛树脂10%~30%、苯胺0.01%~5%、三乙醇胺0.01%~5%和二溴丙醇0.01%~5%,其余为异丙醇。
3.如权利要求1所述的一种能显著减低电子器件软错误的低α锡膏,其特征在于,低α射线锡合金粉末中,按质量百分比,锡1%~98%、铅0%~95%、银0.5%~5%、铜0.01%~1%、锑5%~30%。
4.一种能显著减低电子器件软错误的低α锡膏的制备方法,其特征在于,包括以下步骤:
步骤一,制备低α锡合金粉末
a、备纯度为99.9%及以上的金属单质,包括但不限于锡,银,铜,锑,铋,铅;
b、使用电解的方式去除金属单质中的杂质,获得纯度99.999%及以上的金属;
c、采用激光同位素方法去除金属中的释放α射线的铅和铋,利用UltraLo-1800超低本底α计数器检测α个数,得到要求的低α或超低α金属单质;
d、使用已经提纯好的低α或超低α的金属单质按照所需要求重熔炼制成不同比例的金属合金,利用UltraLo-1800超低本底α计数器检测α个数,获得低α或超低α锡合金;
e、通过超声雾化法制备锡及锡合金粉末,利用不同孔径的网晒筛选出不同粒径范围的低α或超低α锡粉或锡合金粉;
步骤二,制备助焊膏
a、将20%~50%的水白松香加入反应釜中80℃~140℃搅拌熔化;
b、加入10%~30%的酚醛树脂均匀搅拌;
c、待冷却至80℃~110℃后加入0.01%~5%苯胺,0.01%~5%的三乙醇胺及0.01%~5%的二溴丙醇均匀搅拌;
d、待冷却至40~50℃后加入异丙醇均匀搅拌并冷却至室温后;
e、使用研磨机研磨到足够细腻程度的助焊膏备用;
步骤三,合成焊锡膏,其中低α或超低α锡粉或合金粉重量占比85%-92%,助焊膏重量占比8%-15%;
a、称取重量占比8%-15%的助焊膏于锡膏罐中,利用搅拌机充分搅拌均匀;
b、称取1/2重量的锡粉或锡合金粉加入到锡膏罐中,利用搅拌机充分搅拌均匀后,加入另外1/2重量的锡粉或锡合金粉搅拌均匀;
c、手动翻底搅拌均匀;
d、搅拌机中抽真空搅拌5-15分钟;
e、抽样检测锡膏各项数据,数据OK,即可得到低α焊锡膏。
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