CN116564906A - 电子装置 - Google Patents
电子装置 Download PDFInfo
- Publication number
- CN116564906A CN116564906A CN202210103751.0A CN202210103751A CN116564906A CN 116564906 A CN116564906 A CN 116564906A CN 202210103751 A CN202210103751 A CN 202210103751A CN 116564906 A CN116564906 A CN 116564906A
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- Prior art keywords
- circuit layer
- electronic device
- electronic
- electrically connected
- electronic component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 229910000679 solder Inorganic materials 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
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- 239000011810 insulating material Substances 0.000 description 1
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- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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Abstract
本发明公开了一种电子装置,电子装置包括电路层、电子元件以及导热元件。电子元件设置在该电路层上且与电路层电性连接。导热元件设置在电路层与电子元件之间。其中,导热元件用以与电子元件进行热交换。
Description
技术领域
本发明涉及一种电子装置,特别是涉及一种改善电子元件散热的电子装置。
背景技术
近年来,电子装置中的电子元件逐渐趋向小型化与高密集化,为此发展出多样化的电子元件封装技术。在现有的封装技术中,是将电子元件经由凸块或触点电连接于金属层,以实现电路的电性连接,同时达到散热的功能。然而,依上述设计所具有的散热面积较小,造成散热效率不佳。
发明内容
本发明的目的之一在于提供一种电子装置,以解决现有电子装置所遭遇的问题,进而改善电子装置的热传效率或散热效率。
本发明的一实施例提供一种电子装置,电子装置包括电路层、电子元件以及导热元件。电子元件设置在该电路层上且与电路层电性连接。导热元件设置在电路层与电子元件之间。其中,导热元件用以与电子元件进行热交换。
本发明的一实施例提供一种电子装置,电子装置包括电路层、接垫以及电子元件。接垫设置在电路层上。电子元件设置在电路层上且与电路层电性连接。电子元件包括多个接合块,且多个接合块与接垫电性连接。
本发明的一实施例提供一种电子装置,电子装置包括电路层、电子元件、第一流道结构以及流体材料。电子元件设置在电路层上且与电路层电性连接。第一流道结构包括第一流道,其中电子元件设置在第一流道结构中。流体材料设置在第一流道中。其中,流体材料用以与电子元件进行热交换。
附图说明
图1为本发明第一实施例的电子装置的局部剖面示意图。
图2A为本发明第一实施例的电子装置的俯视透视示意图。
图2B为本发明第一实施例的电子装置的仰视示意图。
图3为本发明第二实施例的电子装置的局部剖面示意图。
图4为本发明第二实施例的电子装置的俯视透视示意图。
图5为本发明第三实施例的电子装置的局部剖面示意图。
图6为本发明第三实施例的电子装置的俯视透视示意图。
图7为本发明第四实施例的电子装置的局部剖面示意图。
图8为本发明第五实施例的电子装置的局部剖面示意图。
图9为本发明第六实施例的电子装置的局部剖面示意图。
附图标记说明:100、200、300、400、500、600-电子装置;110-电路层;110I、160I-输入孔;110T、160T-输出孔;112、112a、112b、112c-导电层;114、114a、114b-绝缘层;116-连接孔;118-凹槽;120-电子元件;120a-上表面;120S、130S-边缘;122、1221、1222-接合块;124、150、1501、1502-导电元件;130-导热元件;130T-上底;132-导热部分;134-开口;140-接垫;160-第一流道结构;162、192-基板;164、194-支撑件;170-流体材料;180-电路板;190-第二流道结构;210-保护层;G1-第一群组;G2-第二群组;g1、g2-间隙;P1-第一流道;P2-第二流道;PU-封装单元;W1、W2、W3、W4-宽度;X、Y-方向。
具体实施方式
下文结合具体实施例和附图对本发明的内容进行详细描述,须注意的是,为了使读者能容易了解及图式的简洁,本发明中的多张图式只绘出装置的一部分,且图式中的特定元件并非依照实际比例绘图。此外,图中各元件的数量及尺寸仅作为示意,并非用来限制本发明的范围。
本发明通篇说明书与权利要求中会使用某些词汇来指称特定元件。本领域技术人员应理解,电子设备制造商可能会以不同的名称来指称相同的元件。本文并不意在区分那些功能相同但名称不同的元件。在下文说明书与权利要求书中,“含有”与“包括”等词为开放式词语,因此其应被解释为“含有但不限定为…”之意。当在本说明书中使用术语“包含”、“包括”和/或“具有”时,其指定了所述特征、区域、步骤、操作和/或元件的存在,但并不排除一个或多个其他特征、区域、步骤、操作、元件和/或其组合的存在或增加。
当元件或膜层被称为在另一个元件或膜层“上”或“连接到”另一个元件或膜层时,它可以直接在此另一元件或膜层上或直接连接到此另一元件或膜层,或者两者之间存在有插入的元件或膜层。相反地,当元件被称为“直接”在另一个元件或膜层“上”或“直接连接到”另一个元件或膜层时,两者之间不存在有插入的元件或膜层。
本文中所提到的方向用语,例如:“上”、“下”、“前”、“后”、“左”、“右”等,仅是参考附图的方向。因此,使用的方向用语是用来说明,而并非用来限制本发明。在附图中,各图式绘示的是特定实施例中所使用的结构及/或材料的通常性特征。然而,这些图式不应被解释为界定或限制由这些实施例所涵盖的范围或性质。举例来说,为了清楚起见,各膜层、区域及/或结构的相对尺寸、厚度及位置可能缩小或放大。
术语“大约”、“等于”、“相等”或“相同”、“实质上”或“大致上”一般解释为在所给定的值或范围的20%以内,或解释为在所给定的值或范围的10%、5%、3%、2%、1%或0.5%以内。
说明书与权利要求书中所使用的序数例如“第一”、“第二”等的用词用以修饰元件,其本身并不意含及代表该(或该些)元件有任何之前的序数,也不代表某一元件与另一元件的顺序、或是制造方法上的顺序,该些序数的使用仅用来使具有某命名的元件得以和另一具有相同命名的元件能作出清楚区分。权利要求书与说明书中可不使用相同用词,据此,说明书中的第一构件在权利要求中可能为第二构件。
本发明所述的电子装置可包括显示装置、背光装置、天线装置、感测装置或拼接装置,但不以此为限。电子装置可为可弯折或可挠式电子装置。显示装置可为非自发光型显示装置或自发光型显示装置。天线装置可为液晶型态的天线装置或非液晶型态的天线装置,感测装置可为感测电容、光线、热能或超声波的感测装置,但不以此为限。拼接装置可例如是显示器拼接装置或天线拼接装置,但不以此为限。需注意的是,电子装置可为前述的任意排列组合,但不以此为限。
须知悉的是,在不脱离本发明的精神下,可将数个不同实施例中的特征进行替换、重组、混合以完成其他实施例。
请参考图1与图2A。图1为本发明第一实施例的电子装置的局部剖面示意图。图2A为本发明第一实施例的电子装置的俯视透视示意图,即沿着方向Y俯视的透视示意图,其中图1为沿着图2A的切线A-A’的局部剖面示意图。如图1与图2A所示,本发明第一实施例的电子装置100可包括电路层110、电子元件120以及导热元件130。电路层110可包括在方向Y上堆叠设置的多层导电层112及多层绝缘层114,例如包括导电层112a、导电层112b与导电层112c以及绝缘层114a与绝缘层114b,但不限于此。在本实施例中,电路层110可为重分布层(redistribution layer,RDL),以使线路重布,例如可通过金属布线制程及接垫制程改变线路接点位置,但不以此为限。在本发明中,方向Y可为电子装置的俯视方向,方向X可实质上平行于水平方向,亦即平行于电子元件120的一表面,而方向Y可实质上垂直于方向X。电子元件120设置在电路层110上,且与电路层110电性连接。电子元件120可例如为晶粒(die)、芯片(chip)、集成电路(IC)、发光单元或其他合适的主/被动元件,但不限于此。
导热元件130设置在电路层110与电子元件120之间,其中导热元件130用以与电子元件120进行热交换,以改善电子装置100的热传效率或散热效率。本发明中所指“热交换”可表示存在能量的传递,例如电子元件120的热能可通过导热元件130传递到电路层120,亦可为电路层120的热能通过导热元件130传递到电子元件120,但不以此为限。在一些实施例中,导热元件130可包括导热材料,本发明所指“导热材料”可例如为导热系数大于0.4瓦/(公尺*克耳文)(W/(m*K))的材料,导热材料例如包括灌封胶、硅胶膏、胶硅脂、导热泥、硅胶片、导热硅布、散热油、导热涂料、塑料、导热膜、绝缘材料、界面材料、双面胶、导热散热基板、相变材料、散热膜、云母片、垫片、胶带、液态金属导热片、金属材料、导电材料、其他合适的材料或上述材料的组合,但不以此为限。
在一些实施例中,如图1与图2A所示,本发明电子装置100还可包括接垫140,设置在电路层110上,且接垫140与电路层110电性连接。并且,电子元件120可包括多个接合块122,且多个接合块122与接垫140电性连接。在一些实施例中,可例如通过薄塑封四角扁平封装技术(thin quad flat package)将电子元件120固定在电路层110上的接垫140,但不以此为限。详细而言,电路层110可包括导电层112a、导电层112b及导电层112c,导电层112b设置在导电层112a上,导电层112c设置在导电层112b上,绝缘层114中可包括一或多个连接孔116,导电层112a、导电层112b及导电层112c可通过连接孔116而电连接。部分导电层112c的表面可选择性的形成凹槽118,而多个接垫140分别对应设置在其中一个凹槽118中并与导电层112c电性连接,例如在方向Y上各接垫140可至少部分重叠于各凹槽118,但不以此为限。此外,电子元件120的各接合块122可分别通过导电元件124与其中一个接垫140电性连接,其中导电元件124可例如为焊球(solder ball),导电元件124可包括铜、锡、镍、金、铅、其他适合的导电材料或上述材料的组合,但不限于此。在一些实施例中,导热元件130可包括多个导热部分132,多个导热部分132可间隔设置在电路层110与电子元件120之间。如图2A所示的俯视图,导热部分132可例如在方向X上设置在相邻的接垫140之间或接垫140与电子元件120的边缘120S之间,但不以此为限。导热部分132的尺寸可依据接垫140的尺寸及/或密度进行调整,图1中是以在方向X上导热部分132的上底130T的宽度近似于接垫140的宽度为例,图2A中是以导热部分132的顶部面积近似于接垫140的面积为例,但本发明导热部分132的尺寸并不以此为限。
在一些实施例中,如图1与图2A所示,电子元件120包括多个接合块122,且多个接合块122中的其中一个接合块1221的尺寸可不同于另一个接合块1222的尺寸。举例而言,如图1所示,在方向X上接合块1221的宽度W1大于接合块1222的宽度W2,或者如图2A的俯视图所示,接合块1221的面积大于接合块1222的面积,但不限于此。在一些实施例中,各接合块122具有相同或不同的尺寸,其中尺寸较大的接合块122(例如接合块1221)可具有较高的输出瓦数或传输速度,尺寸较小的接合块122(例如接合块1222)可具有较低的输出瓦数或传输速度,但不以此为限。在一些实施例中,如图2A所示,电子元件120的多个接合块122中的一部分可输出同一信号,且多个接合块122中的另一部分可输出另一信号,例如第一行(row)的接合块122可输出第一信号,在图2A中以第一群组G1表示,第二行的接合块122可输出第二信号,在图2A中以第二群组G2表示,且第一信号不同于第二信号,也就是说,第二群组G2中的接合块1222输出的第一信号可不同于第一群组G1中的接合块1221输出的第二信号,但不以此为限,各接合块122输出的信号可依据电子元件120的实际设计进行调整,在其他实施例中各接合块122输出的信号可为彼此独立的不同信号。
在一些变化实施例中,多个接垫140的尺寸可不相同,或者接垫140的尺寸可对应接合块122的尺寸,例如对应接合块1221设置的接垫140的尺寸可大于对应接合块1222设置的接垫140的尺寸,以提升热传效率或散热效率,但不以此为限,各接垫140的尺寸可依据电路层110的实际设计进行调整,例如在其他实施例中各接垫140的尺寸可相同。
请参考图1、图2A与图2B。图2B为本发明第一实施例的电子装置的仰视示意图,即沿着相反于方向Y的方向的仰视示意图。在一些实施例中,如图1、图2A与图2B所示,本发明电子装置100还可包括多个导电元件150,设置在电路层110相反于电子元件120的一侧,多个导电元件150可与电路层110电性连接,且导电元件150中的一部分可通过电路层110电连接于电子元件120,其中导电元件150可例如为焊球,导电元件150可包括铜、锡、镍、金、铅或其他适合的导电材料,但不限于此。举例而言,如图1所示,多个导电元件150可与电路层110中位于最下层的导电层112a电性连接,且导电元件150中的一部分可经由导电层112a、导电层112b、导电层112c及接垫140电连接于电子元件120的接合块122。在一些实施例中,多个导电元件150中的其中一个导电元件1501的尺寸可不同于另一个导电元件1502的尺寸。举例而言,如图1所示,在方向X上导电元件1501的宽度W3可大于导电元件1502的宽度W4,或者如图2B的仰视图所示,导电元件1501的面积可大于导电元件1502的面积,但不限于此。在一些实施例中,多个导电元件150的尺寸可不相同,或者导电元件150的尺寸可对应接合块122的尺寸,例如对应接合块1221设置的导电元件150的尺寸可大于对应接合块1222设置的导电元件150的尺寸,以提升热传效率或散热效率,但不以此为限。
在一些实施例中,通过金属布线制程及接垫制程改变线路接点位置,可使得设置在电路层110的一侧上的接垫140的数量相同或不同于设置在电路层110的另一侧上的导电元件150的数量。举例而言,接垫140的数量可小于导电元件150的数量,如图2A的俯视图所示,接垫140的数量可为6个,而如图2B的仰视图所示,导电元件150的数量可为25个,但接垫140与导电元件150的数量并不以此为限,可依据装置的实际结构设计进行调整。在另一些实施例中,接垫140的数量可相同于导电元件150的数量,且在方向Y上各接垫140不重叠于各导电元件150。在其他一些实施例中,接垫140的数量可大于导电元件150的数量,但不限于此。
下文将继续详述本发明的其它实施例,为了简化说明,下文中使用相同标号标注相同元件,以下主要针对不同实施例间的差异详加叙述,且本发明的各实施例与实施例可以互相组合与变化。
请参考图3与图4。图3为本发明第二实施例的电子装置的局部剖面示意图。图4为本发明第二实施例的电子装置的俯视透视示意图,即沿着方向Y俯视的透视示意图,其中图3为沿着图4的切线A-A’的局部剖面示意图。如图3与图4所示,本发明第二实施例的电子装置200可包括电路层110、电子元件120以及导热元件130。电路层110可包括在方向Y上堆叠设置的多层导电层112及多层绝缘层114,且电路层110可为重分布层(redistributionlayer,RDL),以使线路重布,例如可通过金属布线制程及接垫制程改变线路接点位置,但不以此为限。电子元件120设置在电路层110上且与电路层110电性连接,且电子元件120包括多个接合块122。导热元件130设置在电路层110与电子元件120之间,导热元件130具有多个开口134,且电子元件120的多个接合块122对应于导热元件130的多个开口134,例如在方向Y上各接合块122可至少部分重叠于各开口134,但不以此为限。其中,导热元件130用以与电子元件120进行热交换,以改善电子装置100的散热效率。
导热元件130的设置范围可超出电子元件120的外围边缘120S,即导热元件130的边缘130S相对于电子元件120的边缘120S可更为突出,在图4的俯视图中可以看出电子元件120的边缘120S位于导热元件130的边缘130S所构成区域,上述设计可以增加热传面积。举例而言,可例如通过涂布、曝光及/或显影等制程将导热元件130形成在电路层110上且形成多个开口134,以预留空间提供后续电子元件120的多个接合块122设置以电连接于电路层110,其中导热元件130的表面可呈弧形或其他不规则外型,但不限于此。
在一些实施例中,如图3与图4所示,本发明电子装置200还可包括多个接垫140,设置在电路层110上,多个接垫140与电路层110中位于最上层的导电层112电性连接且可分别对应于导热元件130的一个开口134。接垫140与导热元件130之间可存在间隙g1,即导热元件130不与接垫140直接接触,但不以此为限。并且,电子元件120的各接合块122可分别通过导电元件124与其中一个接垫140电性连接。在一些实施例中,本发明电子装置200还可包括多个导电元件150,设置在电路层110相反于电子元件120的一侧,多个导电元件150可与电路层110中位于最下层的导电层112电性连接,但并不以此为限。
请参考图5与图6。图5为本发明第三实施例的电子装置的局部剖面示意图。图6为本发明第三实施例的电子装置的俯视透视示意图,即沿着方向Y俯视的透视示意图,其中图5为沿着图6的切线A-A’的局部剖面示意图。如图5与图6所示,本发明第二实施例的电子装置300可包括电路层110、接垫140以及电子元件120。电路层110可包括在方向Y上堆叠设置的多层导电层112及多层绝缘层114。接垫140设置在电路层110上,且电子元件120设置在电路层110上且与电路层110电性连接。电子元件120包括多个接合块122,且多个接合块120与接垫140电性连接,其中多个接合块122可对应于同一个接垫140,以增加热传面积,进而改善热传效率。例如,在方向Y上多个接合块122可重叠或部分重叠于同一个接垫140,图6中是以四个接合块122对应于一个接垫140为例,但对应于一个接垫140的接合块122的数量并不以此为限,可依据装置的实际结构设计进行调整。
在一些实施例中,如图5与图6所示,本发明电子装置300还可包括导热元件130设置在电路层110上,且在方向Y上导热元件130与电子元件120之间可存在间隙g2,即导热元件130不与电子元件120直接接触,其中导热元件130可呈弧形或其他不规则外型,但不以此为限。此外,导热元件130的设置范围可不超出电子元件120的外围边缘120S,即在俯视图中导热元件130的边缘130S位于电子元件120的边缘120S的范围之内。导热元件130可与接垫140直接接触,即接垫140与导热元件130之间可不具有间隙,以改善热传效率,但不以此为限。在图5所示实施例中,接垫140可位于导热元件130的开口134中,或是说接垫140可对应于导热元件130的开口134设置。
请参考图7。图7为本发明第四实施例的电子装置的局部剖面示意图。如图7所示,本发明第四实施例的电子装置400可包括电路层110、电子元件120、第一流道结构160以及流体材料170。电子元件120设置在电路层110上且与电路层110电性连接。第一流道结构160包括第一流道P1,其中电子元件120设置在第一流道结构160中。流体材料170设置在第一流道P1中,且流体材料170用以与电子元件120进行热交换,以改善电子装置400的散热效率。第一流道P1可为由第一流道结构160所围绕出的空间。流体材料170可包括液态或气态的导热材料,例如包括去离子水、导热硅脂、冷媒、丙酮、异丙醇、氮气、惰性气体、其他合适的材料或上述材料的组合,但不以此为限。
具体而言,在一些实施例中,第一流道结构160可包括基板162及支撑件164。基板162对应于电子元件120设置,且电子元件120设置在基板162与电路层110之间,其中基板162在方向Y上可至少部分重叠于电子元件120。支撑件164在方向X上可设置在电子元件120的相对两侧。在一些实施例中,支撑件164可设置在电子元件120的外围,例如支撑件164可位于电子元件120的外侧且环状包围电子元件120,但不以此为限。第一流道结构160可包围电子元件120,例如支撑件164连接于基板162与电路层110,因此基板162与支撑件164在电路层110之上可包围电子元件120。通过上述第一流道结构160的设计,可在基板162、支撑件164与电子元件120之间形成第一流道P1,并在第一流道P1中设置流体材料170以与电子元件120进行热交换。在一些实施例中,基板162及/或支撑件164可包括导热材料,基板162可例如包括金属、石墨烯、陶瓷、导热硅胶、其他合适的材料或上述材料的组合,支撑件164可例如包括密封胶(sealant),但不限于此。在一些实施例中,第一流道结构160可为一体成型的结构,用以包围电子元件120并与电子元件120之间形成第一流道P1,例如基板162与支撑件164具有相同材料且可一起形成,但不以此为限。
在一些实施例中,如图7所示,电路层110可包括在方向Y上堆叠设置的多层导电层112及多层绝缘层114。电子元件120的接合块122可通过接垫140与电路层110中位于最上层的导电层112电性连接。此外,电子装置400还可包括多个导电元件150,设置在电路层110相反于电子元件120的一侧,多个导电元件150可与电路层110电性连接,但不以此为限。
请参考图8。图8为本发明第五实施例的电子装置的局部剖面示意图。如图8所示,本发明第五实施例的电子装置500可包括电路层110、电子元件120、第一流道结构160以及流体材料170,其中电路层110、电子元件120、及第一流道结构160可构成封装单元PU,且一个电子装置500可包括多个封装单元PU,但不限于此。电子元件120设置在电路层110上且与电路层110电性连接。第一流道结构160包括第一流道P1,其中电子元件120设置在第一流道结构160中。并且,电路层110包括输入孔110I及输出孔110T,流体材料170可由输入孔110I进入第一流道P1且由输出孔110T离开第一流道P1,使得流体材料170可设置在第一流道P1中并通过对流方式与电子元件120进行热交换,以改善电子装置500的散热效率。具体而言,电路层110的输入孔110I及输出孔110T可贯穿电路层110,且在方向Y上俯视时,输入孔110I及输出孔110T可分别邻近电子元件120的相对两侧,使得第一流道P1中的流体材料170可形成如图8中虚线箭头所示的对流,以与电子元件120进行热交换。在一些实施例中,第一流道结构160可包括基板162及支撑件164,其细部结构与材料可参考前述实施例的说明,于此将不再赘述。
在一些实施例中,如图8所示,电子装置500还可包括电路板180及第二流道结构190。电路板180与电路层110电性连接,例如电路板180可通过多个导电元件150与电路层110电性连接,但不限于此。电路板180例如包括印刷电路板,但不以此为限。第二流道结构190设置在电路板180上且包括第二流道P2。流体材料170还可设置在第二流道P2中并包围覆盖封装单元PU,以与封装单元PU进行热交换,且流体材料170还可由输入孔110I进入第一流道P1且由输出孔110T离开第一流道P1,进而与电子元件120进行热交换。
在一些实施例中,第二流道结构190可包括基板192及支撑件194。基板192可对应于多个封装单元PU设置,且多个封装单元PU设置在基板192与电路板180之间,其中基板192在方向Y上可至少部分重叠于多个封装单元PU,或是说基板192在方向Y上可覆盖多个封装单元PU。支撑件194在方向X上可设置在多个封装单元PU的相对两侧。在一些实施例中,支撑件194可设置在所有封装单元PU的外侧,例如支撑件194可位于所有封装单元PU的外围且环状包围所有封装单元PU,但不以此为限。由于支撑件194连接于基板192与电路板180,因此基板192与支撑件194一同包围设在基板192与支撑件194之间的封装单元PU。通过上述第二流道结构190的设计,可在基板192、支撑件194与封装单元PU之间形成第二流道P2,并在第二流道P2中设置流体材料170以与封装单元PU及封装单元PU中的电子元件120进行热交换。在一些实施例中,基板192及/或支撑件194可包括导热材料,基板192可例如包括金属、石墨烯、陶瓷、导热硅胶、其他合适的材料或上述材料的组合,支撑件194可例如包括密封胶,但不限于此。在一些实施例中,第二流道结构190可为一体成型的结构,用以包围多个封装单元PU并与封装单元PU之间形成第二流道P2,例如基板192与支撑件194具有相同材料且可一起形成,但不以此为限。
在一些实施例中,如图8所示,电子装置500可选择性地包括保护层210,且保护层210覆盖电子元件120的多个接合块122,保护层210还可进一步覆盖接垫140及/或围绕电子元件120的外围,其中保护层210可例如包括环氧树脂、陶瓷、其他合适的材料或上述材料的组合,但不以此为限,在其他实施例中也可不设置保护层210。具体而言,电子装置500中的各封装单元PU可选择性地包括保护层210,保护层210可设置在电路层110上,且保护层210可覆盖一部分的电路层110表面、设置在电路层110上的接垫140、电子元件120的多个接合块122以及至少一部分的电子元件120表面,例如电子元件120的侧表面,但不以此为限。在一些实施例中,如图8所示,保护层210可暴露电子元件120的上表面120a,即电子元件120的上表面120a没有被保护层210所覆盖。在另外一些实施例中,保护层210可覆盖电子元件120的上表面120a,但不以此为限。
请参考图9。图9为本发明第六实施例的电子装置的局部剖面示意图。如图9所示,本发明第六实施例的电子装置600可包括电路层110、电子元件120、第一流道结构160以及流体材料170,其中电路层110、电子元件120及第一流道结构160可构成封装单元PU,且电子装置600可包括多个封装单元PU,但不限于此。电子元件120设置在电路层110上且与电路层110电性连接。第一流道结构160包括第一流道P1,其中电子元件120设置在第一流道结构160中。并且,第一流道结构160包括输入孔160I及输出孔160T,流体材料170可由输入孔160I进入第一流道P1且由输出孔160T离开第一流道P1,使得流体材料170可设置在第一流道P1中并通过对流方式与电子元件120进行热交换,以改善电子装置600的散热效率。
在一些实施例中,第一流道结构160可包括基板162,且基板162包括输入孔160I及输出孔160T。具体而言,基板162对应于电子元件120设置,且电子元件120设置在基板162与电路层110之间。基板162的输入孔160I及输出孔160T可贯穿基板162,且由方向Y俯视电子装置600时,输入孔160I及输出孔160T可分别邻近电子元件120的相对两侧,使得第一流道P1中的流体材料170可形成如图9中虚线箭头所示的对流,以与电子元件120进行热交换。在一些实施例中,第一流道结构160可包括基板162及支撑件164,且基板162包括输入孔160I及输出孔160T,其细部结构与材料可参考前述实施例的说明,于此将不再赘述。
在一些实施例中,如图9所示,电子装置600还可包括电路板180及第二流道结构190,第二流道结构190可包括基板192及支撑件194,另一方面,电子装置600可选择性地包括保护层210,上述元件的细部结构与材料可参考前述实施例的说明,于此将不再赘述。
综上所述,根据本发明实施例的电子装置,通过导热元件、接垫、接合块及/或导电元件的结构设计,或者通过流道结构及流体材料的结构设计,可改善电子装置的热传效率及散热效率。
以上所述仅为本发明的实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (11)
1.一种电子装置,其特征在于,包括:
一电路层;
一电子元件,设置在该电路层上且与该电路层电性连接;以及
一导热元件,设置在该电路层与该电子元件之间;
其中,该导热元件用以与该电子元件进行热交换。
2.根据权利要求1所述的电子装置,其特征在于,该电子元件包括多个接合块,该导热元件具有多个开口,且该多个接合块对应于该多个开口。
3.根据权利要求1所述的电子装置,其特征在于,还包括一接垫,设置在该电路层上且与该电路层电性连接,其中该电子元件包括多个接合块,且该多个接合块与该接垫电性连接。
4.根据权利要求1所述的电子装置,其特征在于,该电子元件包括多个接合块,该多个接合块中的一个的尺寸不同于该多个接合块中的另一个的尺寸。
5.一种电子装置,其特征在于,包括:
一电路层;
一接垫,设置在该电路层上;以及
一电子元件,设置在该电路层上且与该电路层电性连接;
其中,该电子元件包括多个接合块,且该多个接合块与该接垫电性连接。
6.一种电子装置,其特征在于,包括:
一电路层;
一电子元件,设置在该电路层上且与该电路层电性连接;
一第一流道结构,包括一第一流道,其中该电子元件设置在该第一流道结构中;以及
一流体材料,设置在该第一流道中;
其中,该流体材料用以与该电子元件进行热交换。
7.根据权利要求6所述的电子装置,其特征在于,该电路层包括一输入孔及一输出孔,该流体材料由该输入孔进入该第一流道且由该输出孔离开该第一流道。
8.根据权利要求6所述的电子装置,其特征在于,该第一流道结构包括一输入孔及一输出孔,该流体材料由该输入孔进入该第一流道且由该输出孔离开该第一流道。
9.根据权利要求8所述的电子装置,其特征在于,该第一流道结构包括一基板,且该基板包括该输入孔及该输出孔。
10.根据权利要求6所述的电子装置,其特征在于,还包括:
一电路板,与该电路层电性连接;以及
一第二流道结构,设置在该电路板上且包括一第二流道。
11.根据权利要求6所述的电子装置,其特征在于,还包括一保护层,其中该电子元件包括多个接合块,且该保护层覆盖该多个接合块。
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EP0926730A3 (en) * | 1997-12-19 | 2001-03-21 | Texas Instruments Incorporated | Ball grid array package and method of construction thereof |
TWI395317B (zh) * | 2009-05-15 | 2013-05-01 | Ind Tech Res Inst | 晶片堆疊封裝結構及其製作方法 |
US11495560B2 (en) * | 2015-08-10 | 2022-11-08 | X Display Company Technology Limited | Chiplets with connection posts |
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2022
- 2022-01-28 CN CN202210103751.0A patent/CN116564906A/zh active Pending
- 2022-08-29 US US17/898,410 patent/US20230245949A1/en active Pending
- 2022-12-21 EP EP22215289.4A patent/EP4231344A3/en active Pending
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2023
- 2023-01-02 KR KR1020230000104A patent/KR20230116677A/ko unknown
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US20230245949A1 (en) | 2023-08-03 |
KR20230116677A (ko) | 2023-08-04 |
EP4231344A2 (en) | 2023-08-23 |
EP4231344A3 (en) | 2023-11-01 |
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