CN116497434A - 一种降氧导流筒、单晶炉及降氧工艺方法 - Google Patents
一种降氧导流筒、单晶炉及降氧工艺方法 Download PDFInfo
- Publication number
- CN116497434A CN116497434A CN202310729184.4A CN202310729184A CN116497434A CN 116497434 A CN116497434 A CN 116497434A CN 202310729184 A CN202310729184 A CN 202310729184A CN 116497434 A CN116497434 A CN 116497434A
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- Prior art keywords
- oxygen reduction
- crucible
- liquid level
- guide cylinder
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- Prior art date
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Links
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 69
- 239000001301 oxygen Substances 0.000 title claims abstract description 69
- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 69
- 239000013078 crystal Substances 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000011946 reduction process Methods 0.000 title claims abstract description 15
- 239000007788 liquid Substances 0.000 claims abstract description 64
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 62
- 239000007789 gas Substances 0.000 claims abstract description 36
- 229910052786 argon Inorganic materials 0.000 claims abstract description 31
- 235000017166 Bambusa arundinacea Nutrition 0.000 claims abstract description 3
- 235000017491 Bambusa tulda Nutrition 0.000 claims abstract description 3
- 241001330002 Bambuseae Species 0.000 claims abstract description 3
- 235000015334 Phyllostachys viridis Nutrition 0.000 claims abstract description 3
- 239000011425 bamboo Substances 0.000 claims abstract description 3
- 230000007423 decrease Effects 0.000 claims description 6
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 238000009825 accumulation Methods 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 10
- 239000012535 impurity Substances 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 8
- 238000001816 cooling Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 230000002035 prolonged effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
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CN202310729184.4A CN116497434B (zh) | 2023-06-20 | 2023-06-20 | 一种降氧导流筒、单晶炉及降氧工艺方法 |
Applications Claiming Priority (1)
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CN202310729184.4A CN116497434B (zh) | 2023-06-20 | 2023-06-20 | 一种降氧导流筒、单晶炉及降氧工艺方法 |
Publications (2)
Publication Number | Publication Date |
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CN116497434A true CN116497434A (zh) | 2023-07-28 |
CN116497434B CN116497434B (zh) | 2023-09-05 |
Family
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CN202310729184.4A Active CN116497434B (zh) | 2023-06-20 | 2023-06-20 | 一种降氧导流筒、单晶炉及降氧工艺方法 |
Country Status (1)
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CN (1) | CN116497434B (zh) |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160014910A (ko) * | 2014-07-30 | 2016-02-12 | 주식회사 엘지실트론 | 단결정 성장 장치 |
CN105332046A (zh) * | 2015-10-27 | 2016-02-17 | 天津全达科技有限公司 | 一种新型单晶炉导流筒 |
CN110484967A (zh) * | 2019-09-30 | 2019-11-22 | 内蒙古中环光伏材料有限公司 | 一种直拉硅单晶炉平底导流筒 |
CN110904498A (zh) * | 2019-12-18 | 2020-03-24 | 西安奕斯伟硅片技术有限公司 | 用于拉晶炉的导流筒及拉晶炉 |
CN210636090U (zh) * | 2019-09-30 | 2020-05-29 | 内蒙古中环光伏材料有限公司 | 一种直拉硅单晶炉平底导流筒 |
CN212451737U (zh) * | 2020-07-31 | 2021-02-02 | 隆基绿能科技股份有限公司 | 一种单晶炉用换热系统及单晶炉 |
CN113638038A (zh) * | 2021-09-02 | 2021-11-12 | 华东交通大学 | 一种低氧杂质含量的单晶炉 |
CN215856442U (zh) * | 2021-03-10 | 2022-02-18 | 上海骐杰碳素材料有限公司 | 可变底孔直径的导流筒 |
US20220064815A1 (en) * | 2020-08-28 | 2022-03-03 | Jinko Green Energy (Shanghai) Management Co., LTD | Apparatus and method for continuous crystal pulling |
CN216074096U (zh) * | 2021-08-09 | 2022-03-18 | 湖南金创新材料有限公司 | 一种单晶炉用组合式外导流筒 |
CN216156011U (zh) * | 2021-09-03 | 2022-04-01 | 青海高景太阳能科技有限公司 | 一种用于单晶炉拉制硅单晶的导流筒 |
CN216585312U (zh) * | 2021-07-30 | 2022-05-24 | 内蒙古中环协鑫光伏材料有限公司 | 一种降低直拉单晶硅氧含量的导流筒 |
-
2023
- 2023-06-20 CN CN202310729184.4A patent/CN116497434B/zh active Active
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160014910A (ko) * | 2014-07-30 | 2016-02-12 | 주식회사 엘지실트론 | 단결정 성장 장치 |
CN105332046A (zh) * | 2015-10-27 | 2016-02-17 | 天津全达科技有限公司 | 一种新型单晶炉导流筒 |
CN110484967A (zh) * | 2019-09-30 | 2019-11-22 | 内蒙古中环光伏材料有限公司 | 一种直拉硅单晶炉平底导流筒 |
CN210636090U (zh) * | 2019-09-30 | 2020-05-29 | 内蒙古中环光伏材料有限公司 | 一种直拉硅单晶炉平底导流筒 |
CN110904498A (zh) * | 2019-12-18 | 2020-03-24 | 西安奕斯伟硅片技术有限公司 | 用于拉晶炉的导流筒及拉晶炉 |
CN212451737U (zh) * | 2020-07-31 | 2021-02-02 | 隆基绿能科技股份有限公司 | 一种单晶炉用换热系统及单晶炉 |
US20220064815A1 (en) * | 2020-08-28 | 2022-03-03 | Jinko Green Energy (Shanghai) Management Co., LTD | Apparatus and method for continuous crystal pulling |
CN215856442U (zh) * | 2021-03-10 | 2022-02-18 | 上海骐杰碳素材料有限公司 | 可变底孔直径的导流筒 |
CN216585312U (zh) * | 2021-07-30 | 2022-05-24 | 内蒙古中环协鑫光伏材料有限公司 | 一种降低直拉单晶硅氧含量的导流筒 |
CN216074096U (zh) * | 2021-08-09 | 2022-03-18 | 湖南金创新材料有限公司 | 一种单晶炉用组合式外导流筒 |
CN113638038A (zh) * | 2021-09-02 | 2021-11-12 | 华东交通大学 | 一种低氧杂质含量的单晶炉 |
CN216156011U (zh) * | 2021-09-03 | 2022-04-01 | 青海高景太阳能科技有限公司 | 一种用于单晶炉拉制硅单晶的导流筒 |
Also Published As
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CN116497434B (zh) | 2023-09-05 |
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Effective date of registration: 20231222 Address after: 663000 Xiban area of the Industrial Demonstration Park in Guangnan County, Wenshan Zhuang and Miao Autonomous Prefecture, Yunnan Province Patentee after: Yuze Semiconductor (Wenshan) Co.,Ltd. Address before: G3-2401, No. 88, Jinjihu Avenue, Suzhou Industrial Park, Suzhou Pilot Free Trade Zone, China (Jiangsu) 215000 Patentee before: Suzhou Chenhui Intelligent Equipment Co.,Ltd. |
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Address after: 663300 Xiban area of the Industrial Demonstration Park in Guangnan County, Wenshan Zhuang and Miao Autonomous Prefecture, Yunnan Province Patentee after: Yuze New Energy (Wenshan) Co.,Ltd. Country or region after: China Address before: 663000 Xiban area of the Industrial Demonstration Park in Guangnan County, Wenshan Zhuang and Miao Autonomous Prefecture, Yunnan Province Patentee before: Yuze Semiconductor (Wenshan) Co.,Ltd. Country or region before: China |