CN113529164B - 温区控制系统和晶体生长设备 - Google Patents
温区控制系统和晶体生长设备 Download PDFInfo
- Publication number
- CN113529164B CN113529164B CN202110613325.7A CN202110613325A CN113529164B CN 113529164 B CN113529164 B CN 113529164B CN 202110613325 A CN202110613325 A CN 202110613325A CN 113529164 B CN113529164 B CN 113529164B
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- Prior art keywords
- crystal
- guide
- flow
- control system
- crystal growth
- Prior art date
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- 239000013078 crystal Substances 0.000 title claims abstract description 209
- 238000001816 cooling Methods 0.000 claims abstract description 108
- 239000007788 liquid Substances 0.000 claims abstract description 57
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 65
- 230000002093 peripheral effect Effects 0.000 claims description 14
- 238000004321 preservation Methods 0.000 claims description 13
- 230000007547 defect Effects 0.000 abstract description 47
- 230000000694 effects Effects 0.000 abstract description 18
- 239000012535 impurity Substances 0.000 abstract description 16
- 239000007789 gas Substances 0.000 description 29
- 238000009826 distribution Methods 0.000 description 28
- 235000012431 wafers Nutrition 0.000 description 21
- 239000000112 cooling gas Substances 0.000 description 20
- 238000000034 method Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000009413 insulation Methods 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000000498 cooling water Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000004323 axial length Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000008400 supply water Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (11)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110613325.7A CN113529164B (zh) | 2021-06-02 | 2021-06-02 | 温区控制系统和晶体生长设备 |
PCT/CN2022/096314 WO2022253233A1 (zh) | 2021-06-02 | 2022-05-31 | 温区控制系统和晶体生长设备 |
TW111120644A TWI838758B (zh) | 2021-06-02 | 2022-06-02 | 溫區控制系統和晶體生長設備 |
Applications Claiming Priority (1)
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---|---|---|---|
CN202110613325.7A CN113529164B (zh) | 2021-06-02 | 2021-06-02 | 温区控制系统和晶体生长设备 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN113529164A CN113529164A (zh) | 2021-10-22 |
CN113529164B true CN113529164B (zh) | 2023-03-14 |
Family
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Family Applications (1)
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CN202110613325.7A Active CN113529164B (zh) | 2021-06-02 | 2021-06-02 | 温区控制系统和晶体生长设备 |
Country Status (3)
Country | Link |
---|---|
CN (1) | CN113529164B (zh) |
TW (1) | TWI838758B (zh) |
WO (1) | WO2022253233A1 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113529164B (zh) * | 2021-06-02 | 2023-03-14 | 徐州鑫晶半导体科技有限公司 | 温区控制系统和晶体生长设备 |
CN114150371B (zh) * | 2021-12-06 | 2023-05-12 | 中环领先(徐州)半导体材料有限公司 | 冷却组件及其控制方法、晶体生长装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN205062228U (zh) * | 2015-09-22 | 2016-03-02 | 晶科能源有限公司 | 一种直拉单晶导流筒 |
CN105442037A (zh) * | 2015-12-08 | 2016-03-30 | 西安交通大学 | 一种高速单晶生长装置 |
CN111663178A (zh) * | 2019-03-08 | 2020-09-15 | 宁夏隆基硅材料有限公司 | 直拉单晶用热屏装置及单晶硅生产设备 |
CN112281210A (zh) * | 2020-10-10 | 2021-01-29 | 徐州鑫晶半导体科技有限公司 | 晶体的生长装置及生长方法 |
CN112301416A (zh) * | 2020-10-27 | 2021-02-02 | 青海大学 | 一种单晶炉热屏导流筒 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11313049B2 (en) * | 2015-10-19 | 2022-04-26 | Globalwafers Co., Ltd. | Crystal pulling systems and methods for producing monocrystalline ingots with reduced edge band defects |
CN113529164B (zh) * | 2021-06-02 | 2023-03-14 | 徐州鑫晶半导体科技有限公司 | 温区控制系统和晶体生长设备 |
-
2021
- 2021-06-02 CN CN202110613325.7A patent/CN113529164B/zh active Active
-
2022
- 2022-05-31 WO PCT/CN2022/096314 patent/WO2022253233A1/zh active Application Filing
- 2022-06-02 TW TW111120644A patent/TWI838758B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN205062228U (zh) * | 2015-09-22 | 2016-03-02 | 晶科能源有限公司 | 一种直拉单晶导流筒 |
CN105442037A (zh) * | 2015-12-08 | 2016-03-30 | 西安交通大学 | 一种高速单晶生长装置 |
CN111663178A (zh) * | 2019-03-08 | 2020-09-15 | 宁夏隆基硅材料有限公司 | 直拉单晶用热屏装置及单晶硅生产设备 |
CN112281210A (zh) * | 2020-10-10 | 2021-01-29 | 徐州鑫晶半导体科技有限公司 | 晶体的生长装置及生长方法 |
CN112301416A (zh) * | 2020-10-27 | 2021-02-02 | 青海大学 | 一种单晶炉热屏导流筒 |
Also Published As
Publication number | Publication date |
---|---|
TW202246592A (zh) | 2022-12-01 |
WO2022253233A1 (zh) | 2022-12-08 |
CN113529164A (zh) | 2021-10-22 |
TWI838758B (zh) | 2024-04-11 |
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Address after: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Patentee after: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Address before: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Patentee before: XUZHOU XINJING SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20230522 Address after: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Patentee after: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Patentee before: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. |
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Address after: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Patentee after: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Country or region after: China Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Address before: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Patentee before: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Country or region before: China Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. |
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