CN112281210A - 晶体的生长装置及生长方法 - Google Patents
晶体的生长装置及生长方法 Download PDFInfo
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- CN112281210A CN112281210A CN202011079436.6A CN202011079436A CN112281210A CN 112281210 A CN112281210 A CN 112281210A CN 202011079436 A CN202011079436 A CN 202011079436A CN 112281210 A CN112281210 A CN 112281210A
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (13)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011079436.6A CN112281210B (zh) | 2020-10-10 | 2020-10-10 | 晶体的生长装置及生长方法 |
US18/031,003 US20230357949A1 (en) | 2020-10-10 | 2021-10-11 | Ingot Growth Device and Growth Method |
EP21877041.0A EP4227445A4 (en) | 2020-10-10 | 2021-10-11 | DEVICE AND METHOD FOR CRYSTAL GROWTH |
PCT/CN2021/123121 WO2022073524A1 (zh) | 2020-10-10 | 2021-10-11 | 晶体的生长装置及生长方法 |
TW110137765A TW202225502A (zh) | 2020-10-10 | 2021-10-12 | 晶體的生長裝置及生長方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011079436.6A CN112281210B (zh) | 2020-10-10 | 2020-10-10 | 晶体的生长装置及生长方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN112281210A true CN112281210A (zh) | 2021-01-29 |
CN112281210B CN112281210B (zh) | 2022-05-17 |
Family
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CN202011079436.6A Active CN112281210B (zh) | 2020-10-10 | 2020-10-10 | 晶体的生长装置及生长方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20230357949A1 (zh) |
EP (1) | EP4227445A4 (zh) |
CN (1) | CN112281210B (zh) |
TW (1) | TW202225502A (zh) |
WO (1) | WO2022073524A1 (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113106546A (zh) * | 2021-03-25 | 2021-07-13 | 徐州鑫晶半导体科技有限公司 | 用于单晶炉的导流筒、单晶炉及导流筒的加工方法 |
CN113529164A (zh) * | 2021-06-02 | 2021-10-22 | 徐州鑫晶半导体科技有限公司 | 温区控制系统和晶体生长设备 |
CN113549997A (zh) * | 2021-06-25 | 2021-10-26 | 徐州鑫晶半导体科技有限公司 | 单晶生长的方法、装置及单晶体 |
CN114150371A (zh) * | 2021-12-06 | 2022-03-08 | 徐州鑫晶半导体科技有限公司 | 冷却组件及其控制方法、晶体生长装置 |
CN114250508A (zh) * | 2021-12-02 | 2022-03-29 | 山东有研艾斯半导体材料有限公司 | 一种快速控制直拉单晶硅直径的方法 |
WO2022073524A1 (zh) * | 2020-10-10 | 2022-04-14 | 徐州鑫晶半导体科技有限公司 | 晶体的生长装置及生长方法 |
WO2023231259A1 (zh) * | 2022-05-31 | 2023-12-07 | 西安奕斯伟材料科技有限公司 | 一种用于拉晶炉的热场控制装置及拉晶炉 |
TWI829486B (zh) * | 2021-12-27 | 2024-01-11 | 大陸商中環領先半導體材料有限公司 | 單晶體的製備方法及矽晶體 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116516477B (zh) * | 2023-06-09 | 2023-12-05 | 中电科先进材料技术创新有限公司 | 单晶炉导流筒及单晶炉 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2900558Y (zh) * | 2006-03-31 | 2007-05-16 | 浙江大学 | 基于温度预测补偿的直拉式晶体生长炉 |
CN105603520A (zh) * | 2016-01-20 | 2016-05-25 | 西安交通大学 | 一种高速单晶生长装置及方法 |
CN205295534U (zh) * | 2015-12-08 | 2016-06-08 | 西安交通大学 | 一种高速单晶生长装置 |
US10227710B2 (en) * | 2015-07-31 | 2019-03-12 | Sumco Techxiv Corporation | Manufacturing method of silicon monocrystal |
CN111020691A (zh) * | 2019-12-03 | 2020-04-17 | 徐州鑫晶半导体科技有限公司 | 拉制晶棒的系统和控制方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4414014B2 (ja) * | 1999-04-01 | 2010-02-10 | Sumco Techxiv株式会社 | 単結晶インゴット製造装置 |
JP2009242237A (ja) * | 1999-05-11 | 2009-10-22 | Sumco Techxiv株式会社 | 単結晶インゴット製造装置及び方法 |
JP2007261846A (ja) * | 2006-03-28 | 2007-10-11 | Sumco Techxiv株式会社 | 無欠陥のシリコン単結晶を製造する方法 |
CN105442037A (zh) * | 2015-12-08 | 2016-03-30 | 西安交通大学 | 一种高速单晶生长装置 |
CN112281210B (zh) * | 2020-10-10 | 2022-05-17 | 徐州鑫晶半导体科技有限公司 | 晶体的生长装置及生长方法 |
CN214060710U (zh) * | 2020-10-10 | 2021-08-27 | 徐州鑫晶半导体科技有限公司 | 晶体生长装置的控制系统和晶体生长装置 |
-
2020
- 2020-10-10 CN CN202011079436.6A patent/CN112281210B/zh active Active
-
2021
- 2021-10-11 EP EP21877041.0A patent/EP4227445A4/en active Pending
- 2021-10-11 US US18/031,003 patent/US20230357949A1/en active Pending
- 2021-10-11 WO PCT/CN2021/123121 patent/WO2022073524A1/zh unknown
- 2021-10-12 TW TW110137765A patent/TW202225502A/zh unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2900558Y (zh) * | 2006-03-31 | 2007-05-16 | 浙江大学 | 基于温度预测补偿的直拉式晶体生长炉 |
US10227710B2 (en) * | 2015-07-31 | 2019-03-12 | Sumco Techxiv Corporation | Manufacturing method of silicon monocrystal |
CN205295534U (zh) * | 2015-12-08 | 2016-06-08 | 西安交通大学 | 一种高速单晶生长装置 |
CN105603520A (zh) * | 2016-01-20 | 2016-05-25 | 西安交通大学 | 一种高速单晶生长装置及方法 |
CN111020691A (zh) * | 2019-12-03 | 2020-04-17 | 徐州鑫晶半导体科技有限公司 | 拉制晶棒的系统和控制方法 |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022073524A1 (zh) * | 2020-10-10 | 2022-04-14 | 徐州鑫晶半导体科技有限公司 | 晶体的生长装置及生长方法 |
CN113106546A (zh) * | 2021-03-25 | 2021-07-13 | 徐州鑫晶半导体科技有限公司 | 用于单晶炉的导流筒、单晶炉及导流筒的加工方法 |
CN113529164B (zh) * | 2021-06-02 | 2023-03-14 | 徐州鑫晶半导体科技有限公司 | 温区控制系统和晶体生长设备 |
WO2022253233A1 (zh) * | 2021-06-02 | 2022-12-08 | 徐州鑫晶半导体科技有限公司 | 温区控制系统和晶体生长设备 |
CN113529164A (zh) * | 2021-06-02 | 2021-10-22 | 徐州鑫晶半导体科技有限公司 | 温区控制系统和晶体生长设备 |
TWI838758B (zh) * | 2021-06-02 | 2024-04-11 | 大陸商中環領先半導體科技股份有限公司 | 溫區控制系統和晶體生長設備 |
CN113549997A (zh) * | 2021-06-25 | 2021-10-26 | 徐州鑫晶半导体科技有限公司 | 单晶生长的方法、装置及单晶体 |
WO2022268099A1 (zh) * | 2021-06-25 | 2022-12-29 | 徐州鑫晶半导体科技有限公司 | 单晶生长的方法、装置及单晶体 |
CN113549997B (zh) * | 2021-06-25 | 2023-01-24 | 徐州鑫晶半导体科技有限公司 | 单晶生长的方法、装置及单晶体 |
TWI830263B (zh) * | 2021-06-25 | 2024-01-21 | 大陸商中環領先半導體材料有限公司 | 單晶生長的方法、裝置及單晶體 |
CN114250508A (zh) * | 2021-12-02 | 2022-03-29 | 山东有研艾斯半导体材料有限公司 | 一种快速控制直拉单晶硅直径的方法 |
CN114150371A (zh) * | 2021-12-06 | 2022-03-08 | 徐州鑫晶半导体科技有限公司 | 冷却组件及其控制方法、晶体生长装置 |
TWI829486B (zh) * | 2021-12-27 | 2024-01-11 | 大陸商中環領先半導體材料有限公司 | 單晶體的製備方法及矽晶體 |
WO2023231259A1 (zh) * | 2022-05-31 | 2023-12-07 | 西安奕斯伟材料科技有限公司 | 一种用于拉晶炉的热场控制装置及拉晶炉 |
Also Published As
Publication number | Publication date |
---|---|
TW202225502A (zh) | 2022-07-01 |
EP4227445A1 (en) | 2023-08-16 |
EP4227445A4 (en) | 2024-04-17 |
US20230357949A1 (en) | 2023-11-09 |
CN112281210B (zh) | 2022-05-17 |
WO2022073524A1 (zh) | 2022-04-14 |
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Address after: 221000 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Patentee after: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Address before: 221000 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Patentee before: XUZHOU XINJING SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |
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Address after: 221000 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Patentee after: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Country or region after: China Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Address before: 221000 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Patentee before: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Country or region before: China Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. |