CN116438062A - 层叠薄膜、第2层叠薄膜的制造方法和应变传感器的制造方法 - Google Patents

层叠薄膜、第2层叠薄膜的制造方法和应变传感器的制造方法 Download PDF

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Publication number
CN116438062A
CN116438062A CN202180072118.3A CN202180072118A CN116438062A CN 116438062 A CN116438062 A CN 116438062A CN 202180072118 A CN202180072118 A CN 202180072118A CN 116438062 A CN116438062 A CN 116438062A
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CN
China
Prior art keywords
laminated film
resistance
heating
strain sensor
temperature coefficient
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180072118.3A
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English (en)
Chinese (zh)
Inventor
西森才将
中岛一裕
梨木智刚
丹羽英二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitto Denko Corp
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Nitto Denko Corp
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Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Publication of CN116438062A publication Critical patent/CN116438062A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
    • G01B7/18—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge using change in resistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5873—Removal of material

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Laminated Bodies (AREA)
CN202180072118.3A 2020-10-30 2021-10-28 层叠薄膜、第2层叠薄膜的制造方法和应变传感器的制造方法 Pending CN116438062A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-182131 2020-10-30
JP2020182131A JP7736429B2 (ja) 2020-10-30 2020-10-30 積層フィルム、第２積層フィルムの製造方法およびひずみセンサの製造方法
PCT/JP2021/039823 WO2022092202A1 (ja) 2020-10-30 2021-10-28 積層フィルム、第２積層フィルムの製造方法およびひずみセンサの製造方法

Publications (1)

Publication Number Publication Date
CN116438062A true CN116438062A (zh) 2023-07-14

Family

ID=81383386

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180072118.3A Pending CN116438062A (zh) 2020-10-30 2021-10-28 层叠薄膜、第2层叠薄膜的制造方法和应变传感器的制造方法

Country Status (5)

Country Link
US (1) US20230408244A1 (https=)
JP (2) JP7736429B2 (https=)
CN (1) CN116438062A (https=)
TW (1) TW202225651A (https=)
WO (1) WO2022092202A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022150486A (ja) * 2021-03-26 2022-10-07 Tdk株式会社 歪抵抗膜、圧力センサおよび積層体

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6442101A (en) * 1987-08-08 1989-02-14 Toyota Central Res & Dev Thin-film resistor for strain gauge
JPH10270201A (ja) * 1997-03-21 1998-10-09 Res Inst Electric Magnetic Alloys Ｃｒ−Ｎ基歪抵抗膜およびその製造法ならびに歪センサ
CN107331487A (zh) * 2017-06-20 2017-11-07 华南理工大学 一种用于高温环境的TaN薄膜电阻及其制备方法
CN111417831A (zh) * 2017-09-29 2020-07-14 美蓓亚三美株式会社 应变片
CN111742189A (zh) * 2017-12-22 2020-10-02 美蓓亚三美株式会社 应变片及传感器模块
US20200343027A1 (en) * 2017-10-31 2020-10-29 Minebea Mitsumi Inc. Strain gauge

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2391164A1 (en) * 1999-04-29 2002-05-02 The Board Of Governors For Higher Education, State Of Rhode Island And P Rovidence Plantations Self-compensated ceramic strain gage for use at high temperatures
JP6022881B2 (ja) * 2012-10-04 2016-11-09 公益財団法人電磁材料研究所 歪ゲージ
JP2018151204A (ja) * 2017-03-10 2018-09-27 公益財団法人電磁材料研究所 水素ガス環境用歪センサ
JP2019066312A (ja) * 2017-09-29 2019-04-25 ミネベアミツミ株式会社 ひずみゲージ
JP6793103B2 (ja) * 2017-09-29 2020-12-02 ミネベアミツミ株式会社 ひずみゲージ
JP2019066454A (ja) * 2017-09-29 2019-04-25 ミネベアミツミ株式会社 ひずみゲージ、センサモジュール
JP2019066453A (ja) * 2017-09-29 2019-04-25 ミネベアミツミ株式会社 ひずみゲージ
JP2019090724A (ja) * 2017-11-15 2019-06-13 ミネベアミツミ株式会社 ひずみゲージ
JP2019090723A (ja) * 2017-11-15 2019-06-13 ミネベアミツミ株式会社 ひずみゲージ
JP2019132790A (ja) * 2018-02-02 2019-08-08 ミネベアミツミ株式会社 ひずみゲージ
JP2019184344A (ja) * 2018-04-05 2019-10-24 ミネベアミツミ株式会社 ひずみゲージ及びその製造方法
JP2020053433A (ja) * 2018-09-21 2020-04-02 Koa株式会社 歪センサ抵抗器
WO2020085247A1 (ja) * 2018-10-23 2020-04-30 ミネベアミツミ株式会社 アクセルペダル、ステアリング、６軸センサ、エンジン、バンパー等
JP2020129013A (ja) * 2020-06-05 2020-08-27 ミネベアミツミ株式会社 ひずみゲージ
JP7698949B2 (ja) * 2020-10-30 2025-06-26 日東電工株式会社 積層フィルム、その製造方法およびひずみセンサ
JP7659380B2 (ja) * 2020-10-30 2025-04-09 日東電工株式会社 積層フィルムおよび歪みセンサの製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6442101A (en) * 1987-08-08 1989-02-14 Toyota Central Res & Dev Thin-film resistor for strain gauge
JPH10270201A (ja) * 1997-03-21 1998-10-09 Res Inst Electric Magnetic Alloys Ｃｒ−Ｎ基歪抵抗膜およびその製造法ならびに歪センサ
CN107331487A (zh) * 2017-06-20 2017-11-07 华南理工大学 一种用于高温环境的TaN薄膜电阻及其制备方法
CN111417831A (zh) * 2017-09-29 2020-07-14 美蓓亚三美株式会社 应变片
US20200343027A1 (en) * 2017-10-31 2020-10-29 Minebea Mitsumi Inc. Strain gauge
CN111742189A (zh) * 2017-12-22 2020-10-02 美蓓亚三美株式会社 应变片及传感器模块

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Publication number Publication date
TW202225651A (zh) 2022-07-01
WO2022092202A1 (ja) 2022-05-05
JP7736429B2 (ja) 2025-09-09
JP2025116237A (ja) 2025-08-07
JP2022072602A (ja) 2022-05-17
US20230408244A1 (en) 2023-12-21

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