JPS6442101A - Thin-film resistor for strain gauge - Google Patents
Thin-film resistor for strain gaugeInfo
- Publication number
- JPS6442101A JPS6442101A JP19889687A JP19889687A JPS6442101A JP S6442101 A JPS6442101 A JP S6442101A JP 19889687 A JP19889687 A JP 19889687A JP 19889687 A JP19889687 A JP 19889687A JP S6442101 A JPS6442101 A JP S6442101A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- thin
- film resistor
- metal oxide
- centered cubic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Pressure Sensors (AREA)
- Adjustable Resistors (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Transmission And Conversion Of Sensor Element Output (AREA)
Abstract
PURPOSE:To obtain a resistor exceillng in a strain resistance characteristic and a resistance temperature characteristic by a method wherein one part of a crystal structure is constituted by chromium having an A-15 type face-centered cubic structure and by a metal oxide. CONSTITUTION:One part of a crystal structure is constituted by Cr having an A-15 type face-centered cubic structure and by a metal oxide. Because the Cr constituting this thin-film resistor for strain gauge use contains an A-15 type structure of the face-centered cubic structure, Poisson's ratio of this resistor is large and a gauge factor of this resistor is high. In addition, the linearity of a starin resistance characteristic is excellent. If a mixture ratio of the Cr and the metal oxide for this thin-film resistor is controlled properly, a mean free path of conduction electrons of the Cr can be controlled and a resistance temperature coefficient can be reduced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62198896A JP2562610B2 (en) | 1987-08-08 | 1987-08-08 | Thin film resistor for strain gauge |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62198896A JP2562610B2 (en) | 1987-08-08 | 1987-08-08 | Thin film resistor for strain gauge |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6442101A true JPS6442101A (en) | 1989-02-14 |
JP2562610B2 JP2562610B2 (en) | 1996-12-11 |
Family
ID=16398741
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62198896A Expired - Lifetime JP2562610B2 (en) | 1987-08-08 | 1987-08-08 | Thin film resistor for strain gauge |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2562610B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10270201A (en) * | 1997-03-21 | 1998-10-09 | Res Inst Electric Magnetic Alloys | Cr-n-based strained resistance film, manufacture therefor and strain sensor |
JP2014183248A (en) * | 2013-03-21 | 2014-09-29 | Toshiba Corp | Semiconductor device and strain monitoring device |
-
1987
- 1987-08-08 JP JP62198896A patent/JP2562610B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10270201A (en) * | 1997-03-21 | 1998-10-09 | Res Inst Electric Magnetic Alloys | Cr-n-based strained resistance film, manufacture therefor and strain sensor |
JP2014183248A (en) * | 2013-03-21 | 2014-09-29 | Toshiba Corp | Semiconductor device and strain monitoring device |
Also Published As
Publication number | Publication date |
---|---|
JP2562610B2 (en) | 1996-12-11 |
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