JP2020129013A - ひずみゲージ - Google Patents
ひずみゲージ Download PDFInfo
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- JP2020129013A JP2020129013A JP2020098850A JP2020098850A JP2020129013A JP 2020129013 A JP2020129013 A JP 2020129013A JP 2020098850 A JP2020098850 A JP 2020098850A JP 2020098850 A JP2020098850 A JP 2020098850A JP 2020129013 A JP2020129013 A JP 2020129013A
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- 239000000463 material Substances 0.000 claims abstract description 62
- 239000002346 layers by function Substances 0.000 claims abstract description 53
- 239000011651 chromium Substances 0.000 claims abstract description 50
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 23
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 9
- 239000000956 alloy Substances 0.000 claims abstract description 5
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 5
- 229920005989 resin Polymers 0.000 claims description 21
- 239000011347 resin Substances 0.000 claims description 21
- 239000010936 titanium Substances 0.000 claims description 20
- 239000010410 layer Substances 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 12
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 230000001737 promoting effect Effects 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 claims 1
- 150000002736 metal compounds Chemical class 0.000 abstract 1
- 239000010408 film Substances 0.000 description 39
- 238000000034 method Methods 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 8
- 238000001755 magnetron sputter deposition Methods 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 239000004696 Poly ether ether ketone Substances 0.000 description 3
- 239000004734 Polyphenylene sulfide Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 3
- 229920002530 polyetherether ketone Polymers 0.000 description 3
- -1 polyethylene naphthalate Polymers 0.000 description 3
- 239000011112 polyethylene naphthalate Substances 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 229920000069 polyphenylene sulfide Polymers 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920005672 polyolefin resin Polymers 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002555 FeNi Inorganic materials 0.000 description 1
- 229910000604 Ferrochrome Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910018054 Ni-Cu Inorganic materials 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 229910018481 Ni—Cu Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010038 TiAl Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000805 composite resin Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000013076 target substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000004876 x-ray fluorescence Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
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- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Abstract
Description
図1は、第1の実施の形態に係るひずみゲージを例示する平面図である。図2は、第1の実施の形態に係るひずみゲージを例示する断面図であり、図1のA−A線に沿う断面を示している。図1及び図2を参照するに、ひずみゲージ1は、基材10と、機能層20と、抵抗体30と、端子部41とを有している。
まず、事前実験として、厚さ25μmのポリイミド樹脂からなる基材10の上面10aに、コンベンショナルスパッタ法により機能層20としてTiを真空成膜した。この際、複数の膜厚を狙ってTiを成膜した5個のサンプルを作製した。
Claims (9)
- 可撓性を有する基材と、
前記基材の一方の面に、金属、合金、又は、金属の化合物から形成された機能層と、
前記機能層の一方の面に、クロムとニッケルの少なくとも一方を含む材料から形成された抵抗体と、を有するひずみゲージ。 - 前記機能層は、前記抵抗体の結晶成長を促進する機能を有する請求項1に記載のひずみゲージ。
- 前記抵抗体は、アルファクロムを主成分とする請求項1又は2に記載のひずみゲージ。
- 前記抵抗体は、アルファクロムを80重量%以上含む請求項3に記載のひずみゲージ。
- 前記抵抗体は、窒化クロムを含む請求項3又は4に記載のひずみゲージ。
- 前記機能層は、チタンを含む請求項5に記載のひずみゲージ。
- 前記抵抗体は、チタンを含む請求項6に記載のひずみゲージ。
- 前記抵抗体は、窒化チタンを含む請求項6又は7に記載のひずみゲージ。
- 前記抵抗体を被覆する絶縁樹脂層を有する請求項1乃至8の何れか一項に記載のひずみゲージ。
Priority Applications (2)
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JP2020098850A JP2020129013A (ja) | 2020-06-05 | 2020-06-05 | ひずみゲージ |
JP2023090064A JP2023106586A (ja) | 2020-06-05 | 2023-05-31 | ひずみゲージ |
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JP2020098850A JP2020129013A (ja) | 2020-06-05 | 2020-06-05 | ひずみゲージ |
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JP2017191820A Division JP6793103B2 (ja) | 2017-09-29 | 2017-09-29 | ひずみゲージ |
Related Child Applications (1)
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JP2023090064A Division JP2023106586A (ja) | 2020-06-05 | 2023-05-31 | ひずみゲージ |
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JP2020129013A true JP2020129013A (ja) | 2020-08-27 |
JP2020129013A5 JP2020129013A5 (ja) | 2020-12-17 |
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JP2020098850A Pending JP2020129013A (ja) | 2020-06-05 | 2020-06-05 | ひずみゲージ |
JP2023090064A Pending JP2023106586A (ja) | 2020-06-05 | 2023-05-31 | ひずみゲージ |
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JP2023090064A Pending JP2023106586A (ja) | 2020-06-05 | 2023-05-31 | ひずみゲージ |
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JP (2) | JP2020129013A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022092207A1 (ja) * | 2020-10-30 | 2022-05-05 | 日東電工株式会社 | 積層フィルムおよび歪みセンサの製造方法 |
WO2022092202A1 (ja) * | 2020-10-30 | 2022-05-05 | 日東電工株式会社 | 積層フィルム、第2積層フィルムの製造方法およびひずみセンサの製造方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06300649A (ja) * | 1993-04-12 | 1994-10-28 | Sumitomo Electric Ind Ltd | 薄膜歪抵抗材料とその製造方法及び薄膜歪みセンサ |
JPH07306002A (ja) * | 1994-05-13 | 1995-11-21 | Nok Corp | 歪ゲ−ジ用薄膜およびその製造法 |
JPH08102163A (ja) * | 1994-09-30 | 1996-04-16 | Fujitsu Ltd | 磁気記録媒体及び磁気ディスク装置 |
JPH0916941A (ja) * | 1995-01-31 | 1997-01-17 | Hoya Corp | 磁気記録媒体及びその製造方法 |
JPH10270201A (ja) * | 1997-03-21 | 1998-10-09 | Res Inst Electric Magnetic Alloys | Cr−N基歪抵抗膜およびその製造法ならびに歪センサ |
JP2007173544A (ja) * | 2005-12-22 | 2007-07-05 | Toshiba Corp | X線検出器およびその製造方法 |
JP2016136605A (ja) * | 2015-01-23 | 2016-07-28 | 株式会社豊田中央研究所 | 永久磁石およびその製造方法 |
-
2020
- 2020-06-05 JP JP2020098850A patent/JP2020129013A/ja active Pending
-
2023
- 2023-05-31 JP JP2023090064A patent/JP2023106586A/ja active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06300649A (ja) * | 1993-04-12 | 1994-10-28 | Sumitomo Electric Ind Ltd | 薄膜歪抵抗材料とその製造方法及び薄膜歪みセンサ |
JPH07306002A (ja) * | 1994-05-13 | 1995-11-21 | Nok Corp | 歪ゲ−ジ用薄膜およびその製造法 |
JPH08102163A (ja) * | 1994-09-30 | 1996-04-16 | Fujitsu Ltd | 磁気記録媒体及び磁気ディスク装置 |
JPH0916941A (ja) * | 1995-01-31 | 1997-01-17 | Hoya Corp | 磁気記録媒体及びその製造方法 |
JPH10270201A (ja) * | 1997-03-21 | 1998-10-09 | Res Inst Electric Magnetic Alloys | Cr−N基歪抵抗膜およびその製造法ならびに歪センサ |
JP2007173544A (ja) * | 2005-12-22 | 2007-07-05 | Toshiba Corp | X線検出器およびその製造方法 |
JP2016136605A (ja) * | 2015-01-23 | 2016-07-28 | 株式会社豊田中央研究所 | 永久磁石およびその製造方法 |
Non-Patent Citations (3)
Title |
---|
C.REBHOLZ, ET AL.: "Structure,mechanical and tribological properties of nitrogen-containing chromium coatingsprepared by", SURFACE & COATINGS TECHNOLOGY, vol. 115, JPN6022037471, 1999, pages 222 - 229, ISSN: 0005000479 * |
小林 春洋, スパッタ薄膜, JPN6022037473, 25 February 1993 (1993-02-25), pages 102 - 107, ISSN: 0005000481 * |
結晶成長学辞典, JPN6022037469, 25 July 2001 (2001-07-25), pages 50 - 51, ISSN: 0005000480 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022092207A1 (ja) * | 2020-10-30 | 2022-05-05 | 日東電工株式会社 | 積層フィルムおよび歪みセンサの製造方法 |
WO2022092202A1 (ja) * | 2020-10-30 | 2022-05-05 | 日東電工株式会社 | 積層フィルム、第2積層フィルムの製造方法およびひずみセンサの製造方法 |
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