CN116314286A - 一种碳化硅单晶衬底 - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 71
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
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Abstract
本发明公开了一种碳化硅单晶衬底,涉及碳化硅单晶衬底技术领域,包括主体,所述主体的顶部设置有表面组件,所述表面组件包括衬底表面,所述衬底表面固定连接在主体的顶部,所述衬底表面的正面设置有钉扎区,相邻所述钉扎区之间一体成型有制件区,所述主体的内部设置有内部组件,所述内部组件包括本征点缺陷,所述本征点缺陷的底部固定连接有衬底表层,所述衬底表层的底部固定连接有单晶层。本发明通过人工设置钉扎区,并将钉扎区设置于制件区的周围,可以使制件区上的位错集中在制件区周围,能够降低制件区中心区域的位错密度,可以显著降低有效区域的位错密度,使得有效区域在受电压影响时失效概率降低,便于提高半导体器件的良品率。
Description
技术领域
本发明涉及碳化硅单晶衬底技术领域,具体涉及一种碳化硅单晶衬底。
背景技术
随着半导体技术的不断革新,第三代宽禁带材料中的碳化硅由于自身材料优良特性和碳化硅器件呈现出的巨大应用前景而得到飞速发展,碳化硅晶体的制备以及相关器件的研究一直是国内外的前沿研究热点。碳化硅单晶因具备禁带宽度大、击穿电场高、热导率大、电子饱和漂移速率快、化学稳定性高、抗辐射能力强等各种优越性能,成为耐高温、高频、抗辐射、大功率半导体器件材料的优先选择,但是近年来随着技术进步碳化硅单晶衬底的质量并没有得到有效提升,因此本发明提供碳化硅单晶衬底。针对现有技术存在以下问题:
1、现有的碳化硅单晶衬底,目前市面上以碳化硅单晶为基底的半导体器件,位错密度仍然较高,不能显著提高半导体器件的良品率;
2、现有的碳化硅单晶衬底,采用较大粒径磨料(50-70nm)提高精抛光过程中的机械作用,以此提高抛光速率,进而提高生产效率,但是容易产生抛光雾缺陷、表面划伤、残余颗粒吸附难于清洗及金属离子沾污。
发明内容
为解决上述技术问题,本发明所采用的技术方案是:
一种碳化硅单晶衬底,包括主体,所述主体的顶部设置有表面组件,所述表面组件包括衬底表面,所述衬底表面固定连接在主体的顶部,所述衬底表面的正面设置有钉扎区,相邻所述钉扎区之间一体成型有制件区,所述主体的内部设置有内部组件,所述内部组件包括本征点缺陷,所述本征点缺陷的底部固定连接有衬底表层,所述衬底表层的底部固定连接有单晶层。
一种碳化硅单晶衬底,包括以下内容,
S1、材料组成:化铌、碳化铼、碳化锇、碳化钽、碳化钼、碳化钨和碳化铱,碳化硅粉料置于石墨坩埚内,碳化硅粉料纯度应在99以上,其中所含的浅能级施主杂质如氮的浓度在1×1017cm-3以下,浅能级受主杂质如硼、铝等浓度之和应在1×1017cm-3以下;
S2、籽晶生长面加工:确定好所需碳化硅单晶衬底的钉扎区形状及分布,在籽晶的生长面上按照钉扎区的形状制作图形;
S3、碳化硅单晶加工:将退火处理后的籽晶装炉,并使用传统物理气相传输法进行碳化硅单晶的生长,将用于生长碳化硅单晶的籽晶置于石墨坩埚内部的碳化硅粉料上部后,将石墨坩埚密封;密封后的石墨坩埚放置于石墨保温毡内部后,整体移至单晶生长设备内后密封炉膛;
S4、抛光研磨:使用多线切割工艺将生长完成后的碳化硅单晶加工为所需厚度的晶片,对加工后的碳化硅单晶晶片进行研磨、抛光及清洗,即获得碳化硅单晶衬底。
本发明技术方案的进一步改进在于:S2退火:将加工后的籽晶在惰性气体的保护下进行第一预设温度下的退火处理,处理时间为第一预设时长,预设温度为850℃~900℃,预设时长为30mi n~50mi n。
本发明技术方案的进一步改进在于:S3将炉膛内的压力抽真空至10-5Pa并保持6-12h,以去除炉腔内的残余杂质后,逐步向炉腔内通入保护气氛,例如氩气或氦气。
本发明技术方案的进一步改进在于:单晶生长过程结束后,停止加热炉膛,使炉膛温度自然降低至室温后,打开炉膛取出石墨坩埚,即可得所述的高纯碳化硅单晶,继续进行切割和抛光过程即制得高纯碳化硅单晶片。
本发明技术方案的进一步改进在于:S4第一步使用粗抛液进行抛光,粒径为20-100nm、浓度为35-55%的SiO2磨料用去离子水稀释,使用,粗抛液在流量120-200ml/mi n,温度35-45℃,转速50-120rpm,压力0.10-0.20MPa的抛光工艺条件下,在抛光机上对硅单晶衬底材料进行抛光15-25mi n。
本发明技术方案的进一步改进在于:第二步使用精抛液进行抛光,选用粒径为20-35nm、浓度为35-55%的SiO2磨料用去离子水稀释,精抛液在流量850-1000ml/mi n,温度25-35℃,转速30-60rpm,压力0.05-0.10Mpa的抛光工艺条件下,在抛光机上对硅单晶衬底材料进行抛光6-8mi n。
由于采用了上述技术方案,本发明相对现有技术来说,取得的技术进步是:
1、本发明提供一种碳化硅单晶衬底,通过钉扎区和制件区的共同作用下,在碳化硅单晶衬底的表面上人工设置钉扎区和多个钉扎区制件区用于制作包含碳化硅单晶衬底的半导体器件,制件区周围设置有钉扎区,以使得制件区中心区域的位错密度小于边缘区域。通过人工设置钉扎区,并将钉扎区设置于制件区的周围,可以使制件区上的位错集中在制件区周围,能够降低制件区中心区域的位错密度,可以显著降低有效区域的位错密度,使得有效区域在受电压影响时失效概率降低,便于提高半导体器件的良品率。
2、本发明提供一种碳化硅单晶衬底,通过使用粗抛液进行抛光的作用下,使用,粗抛液在流量120-200ml/mi n,温度35-45℃,转速50-120rpm,压力0.10-0.20MPa的抛光工艺条件下,在抛光机上对硅单晶衬底材料进行抛光,实现高去除速率,当去除量接近所要求范围时;第二步在同一台抛光机上用精抛液在大流量、低温、低压力下,实现硅单晶衬底材料表面低粗糙度的控制。
3、本发明提供一种碳化硅单晶衬底,通过S iO2磨料的作用下,SiO2溶胶作为抛光液磨料,其粒径小均匀可控、浓度高、硬度小、分散度好,能够达到高速率、高平整度、低损伤、无污染,消除了现有Al2O3磨料硬度大、易划伤、易沉淀等诸多弊端,大大降低了表面张力、减小了损伤层、提高了硅片表面的均一性及交换速率,增强了输运过程,同时表面凹凸差大大降低,从而有效的提高表面的平整度及降低粗糙度。
附图说明
图1为本发明的一种碳化硅单晶衬底的整体结构示意图;
图2为本发明的表面组件的结构示意图;
图3为本发明的内部组件的结构示意图;
图4为本发明的材料组成加工的流程结构示意图;
图5为本发明的籽晶生长面加工的流程结构示意图;
图6为本发明的碳化硅单晶加工的流程结构示意图。
图中:1、主体;2、表面组件;21、衬底表面;22、钉扎区;23、制件区;3、内部组件;31、本征点缺陷;32、衬底表层;33、单晶层。
具体实施方式
下面结合实施例对本发明做进一步详细说明:
实施例1
如图1-6所示,本发明提供了一种碳化硅单晶衬底,包括主体1,主体1的顶部设置有表面组件2,表面组件2包括衬底表面21,衬底表面21固定连接在主体1的顶部,衬底表面21的正面设置有钉扎区22,相邻钉扎区22之间一体成型有制件区23,主体1的内部设置有内部组件3,内部组件3包括本征点缺陷31,本征点缺陷31的底部固定连接有衬底表层32,衬底表层32的底部固定连接有单晶层33。
在本实施案例中,制件区23周围设置有钉扎区22,以使得制件区23中心区域的位错密度小于边缘区域。通过人工设置钉扎区22,并将钉扎区22设置于制件区23的周围,可以使制件区23上的位错集中在制件区23周围,能够降低制件区23中心区域的位错密度,可以显著降低有效区域的位错密度,使得有效区域在受电压影响时失效概率降低,便于提高半导体器件的良品率。
实施例2
如图1-6所示,本发明提供了一种碳化硅单晶衬底,包括以下内容,
S1、材料组成:化铌、碳化铼、碳化锇、碳化钽、碳化钼、碳化钨和碳化铱,碳化硅粉料置于石墨坩埚内,碳化硅粉料纯度应在99以上,其中所含的浅能级施主杂质如氮的浓度在1×1017cm-3以下,浅能级受主杂质如硼、铝等浓度之和应在1×1017cm-3以下;
S2、籽晶生长面加工:确定好所需碳化硅单晶衬底的钉扎区形状及分布,在籽晶的生长面上按照钉扎区的形状制作图形;
S3、碳化硅单晶加工:将退火处理后的籽晶装炉,并使用传统物理气相传输法进行碳化硅单晶的生长,将用于生长碳化硅单晶的籽晶置于石墨坩埚内部的碳化硅粉料上部后,将石墨坩埚密封;密封后的石墨坩埚放置于石墨保温毡内部后,整体移至单晶生长设备内后密封炉膛;
S4、抛光研磨:使用多线切割工艺将生长完成后的碳化硅单晶加工为所需厚度的晶片,对加工后的碳化硅单晶晶片进行研磨、抛光及清洗,即获得碳化硅单晶衬底。
在本实施例中,在抛光机上对硅单晶衬底材料进行抛光,实现高去除速率,当去除量接近所要求范围时;第二步在同一台抛光机上用精抛液在大流量、低温、低压力下,实现硅单晶衬底材料表面低粗糙度的控制。
实施例3
如图1-6所示,在实施例2的基础上,本发明提供一种技术方案:优选的,S2退火:将加工后的籽晶在惰性气体的保护下进行第一预设温度下的退火处理,处理时间为第一预设时长,预设温度为850℃~900℃,预设时长为30mi n~50mi n,S3将炉膛内的压力抽真空至10-5Pa并保持6-12h,以去除炉腔内的残余杂质后,逐步向炉腔内通入保护气氛,例如氩气或氦气,单晶生长过程结束后,停止加热炉膛,使炉膛温度自然降低至室温后,打开炉膛取出石墨坩埚,即可得的高纯碳化硅单晶,继续进行切割和抛光过程即制得高纯碳化硅单晶片,S4第一步使用粗抛液进行抛光,粒径为20-100nm、浓度为35-55%的S iO2磨料用去离子水稀释,使用,粗抛液在流量120-200ml/mi n,温度35-45℃,转速50-120rpm,压力0.10-0.20MPa的抛光工艺条件下,在抛光机上对硅单晶衬底材料进行抛光15-25mi n,第二步使用精抛液进行抛光,选用粒径为20-35nm、浓度为35-55%的SiO2磨料用去离子水稀释,精抛液在流量850-1000ml/mi n,温度25-35℃,转速30-60rpm,压力0.05-0.10Mpa的抛光工艺条件下,在抛光机上对硅单晶衬底材料进行抛光6-8mi n。
在本实施例中,SiO2溶胶作为抛光液磨料,其粒径小均匀可控、浓度高、硬度小、分散度好,能够达到高速率、高平整度、低损伤、无污染,消除了现有Al2O3磨料硬度大、易划伤、易沉淀等诸多弊端,大大降低了表面张力、减小了损伤层、提高了硅片表面的均一性及交换速率,增强了输运过程,同时表面凹凸差大大降低,从而有效的提高表面的平整度及降低粗糙度。
下面具体说一下该一种碳化硅单晶衬底的工作原理。
如图1-6所示,通过人工设置钉扎区22,并将钉扎区22设置于制件区23的周围,可以使制件区23上的位错集中在制件区23周围,能够降低制件区23中心区域的位错密度,可以显著降低有效区域的位错密度,使得有效区域在受电压影响时失效概率降低,便于提高半导体器件的良品率,确定好所需碳化硅单晶衬底的钉扎区形状及分布,在籽晶的生长面上按照钉扎区的形状制作图形,将加工后的籽晶在惰性气体的保护下进行第一预设温度下的退火处理,处理时间为第一预设时长,预设温度为850℃~900℃,预设时长为30mi n~50mi n,将退火处理后的籽晶装炉,并使用传统物理气相传输法进行碳化硅单晶的生长,将用于生长碳化硅单晶的籽晶置于石墨坩埚内部的碳化硅粉料上部后,将石墨坩埚密封;密封后的石墨坩埚放置于石墨保温毡内部后,整体移至单晶生长设备内后密封炉膛,将炉膛内的压力抽真空至10-5Pa并保持6-12h,以去除炉腔内的残余杂质后,逐步向炉腔内通入保护气氛,例如氩气或氦气,单晶生长过程结束后,停止加热炉膛,使炉膛温度自然降低至室温后,打开炉膛取出石墨坩埚,即可得的高纯碳化硅单晶,继续进行切割和抛光过程即制得高纯碳化硅单晶片,使用多线切割工艺将生长完成后的碳化硅单晶加工为所需厚度的晶片,对加工后的碳化硅单晶晶片进行研磨、抛光及清洗,即获得碳化硅单晶衬底,第一步使用粗抛液进行抛光,粒径为20-100nm、浓度为35-55%的SiO2磨料用去离子水稀释,使用,粗抛液在流量120-200ml/mi n,温度35-45℃,转速50-120rpm,压力0.10-0.20MPa的抛光工艺条件下,在抛光机上对硅单晶衬底材料进行抛光15-25mi n,第二步使用精抛液进行抛光,选用粒径为20-35nm、浓度为35-55%的S iO2磨料用去离子水稀释,精抛液在流量850-1000ml/mi n,温度25-35℃,转速30-60rpm,压力0.05-0.10Mpa的抛光工艺条件下,在抛光机上对硅单晶衬底材料进行抛光6-8mi n,S iO2溶胶作为抛光液磨料,其粒径小均匀可控、浓度高、硬度小、分散度好,能够达到高速率、高平整度、低损伤、无污染,消除了现有Al2O3磨料硬度大、易划伤、易沉淀等诸多弊端,大大降低了表面张力。
上文一般性的对本发明做了详尽的描述,但在本发明基础上,可以对之做一些修改或改进,这对于技术领域的一般技术人员是显而易见的。因此,在不脱离本发明思想精神的修改或改进,均在本发明的保护范围之内。
Claims (7)
1.一种碳化硅单晶衬底,包括主体(1),其特征在于:所述主体(1)的顶部设置有表面组件(2),所述表面组件(2)包括衬底表面(21),所述衬底表面(21)固定连接在主体(1)的顶部,所述衬底表面(21)的正面设置有钉扎区(22),相邻所述钉扎区(22)之间一体成型有制件区(23),所述主体(1)的内部设置有内部组件(3),所述内部组件(3)包括本征点缺陷(31),所述本征点缺陷(31)的底部固定连接有衬底表层(32),所述衬底表层(32)的底部固定连接有单晶层(33)。
2.一种碳化硅单晶衬底,包括以下内容,其特征在于:
S1、材料组成:化铌、碳化铼、碳化锇、碳化钽、碳化钼、碳化钨和碳化铱,碳化硅粉料置于石墨坩埚内,碳化硅粉料纯度应在99以上,其中所含的浅能级施主杂质如氮的浓度在1×1017cm-3以下,浅能级受主杂质如硼、铝等浓度之和应在1×1017cm-3以下;
S2、籽晶生长面加工:确定好所需碳化硅单晶衬底的钉扎区形状及分布,在籽晶的生长面上按照钉扎区的形状制作图形;
S3、碳化硅单晶加工:将退火处理后的籽晶装炉,并使用传统物理气相传输法进行碳化硅单晶的生长,将用于生长碳化硅单晶的籽晶置于石墨坩埚内部的碳化硅粉料上部后,将石墨坩埚密封;密封后的石墨坩埚放置于石墨保温毡内部后,整体移至单晶生长设备内后密封炉膛;
S4、抛光研磨:使用多线切割工艺将生长完成后的碳化硅单晶加工为所需厚度的晶片,对加工后的碳化硅单晶晶片进行研磨、抛光及清洗,即获得碳化硅单晶衬底。
3.根据权利要求1所述的一种碳化硅单晶衬底,其特征在于:S2退火:将加工后的籽晶在惰性气体的保护下进行第一预设温度下的退火处理,处理时间为第一预设时长,预设温度为850℃~900℃,预设时长为30min~50min。
4.根据权利要求1所述的一种碳化硅单晶衬底,其特征在于:S3将炉膛内的压力抽真空至10-5Pa并保持6-12h,以去除炉腔内的残余杂质后,逐步向炉腔内通入保护气氛,例如氩气或氦气。
5.根据权利要求4所述的一种碳化硅单晶衬底,其特征在于:单晶生长过程结束后,停止加热炉膛,使炉膛温度自然降低至室温后,打开炉膛取出石墨坩埚,即可得所述的高纯碳化硅单晶,继续进行切割和抛光过程即制得高纯碳化硅单晶片。
6.根据权利要求1所述的一种碳化硅单晶衬底,其特征在于:S4第一步使用粗抛液进行抛光,粒径为20-100nm、浓度为35-55%的SiO2磨料用去离子水稀释,使用,粗抛液在流量120-200ml/min,温度35-45℃,转速50-120rpm,压力0.10-0.20MPa的抛光工艺条件下,在抛光机上对硅单晶衬底材料进行抛光15-25min。
7.根据权利要求6所述的一种碳化硅单晶衬底,其特征在于:第二步使用精抛液进行抛光,选用粒径为20-35nm、浓度为35-55%的SiO2磨料用去离子水稀释,精抛液在流量850-1000ml/min,温度25-35℃,转速30-60rpm,压力0.05-0.10Mpa的抛光工艺条件下,在抛光机上对硅单晶衬底材料进行抛光6-8min。
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