CN116041059A - 一种钛酸锶基巨介电陶瓷制备方法 - Google Patents
一种钛酸锶基巨介电陶瓷制备方法 Download PDFInfo
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- 239000000919 ceramic Substances 0.000 title claims abstract description 50
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 title claims abstract description 13
- 239000010955 niobium Substances 0.000 claims abstract description 40
- 239000012298 atmosphere Substances 0.000 claims abstract description 33
- 239000000843 powder Substances 0.000 claims abstract description 30
- 238000005245 sintering Methods 0.000 claims abstract description 24
- 239000002994 raw material Substances 0.000 claims abstract description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 18
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000000203 mixture Substances 0.000 claims abstract description 16
- 239000001301 oxygen Substances 0.000 claims abstract description 16
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 12
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 claims abstract description 9
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims abstract description 9
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 9
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910000018 strontium carbonate Inorganic materials 0.000 claims abstract description 9
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000004408 titanium dioxide Substances 0.000 claims abstract description 9
- 238000000137 annealing Methods 0.000 claims abstract description 7
- 238000000227 grinding Methods 0.000 claims abstract description 7
- 229910052786 argon Inorganic materials 0.000 claims abstract description 6
- 239000001257 hydrogen Substances 0.000 claims abstract description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 6
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims abstract description 6
- 239000000853 adhesive Substances 0.000 claims abstract description 4
- 230000001070 adhesive effect Effects 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims description 23
- 238000001816 cooling Methods 0.000 claims description 19
- 229910010293 ceramic material Inorganic materials 0.000 claims description 15
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
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- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
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- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
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- 238000007873 sieving Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
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- 229910052712 strontium Inorganic materials 0.000 claims description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 2
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- 230000000052 comparative effect Effects 0.000 description 11
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- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
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- 238000005516 engineering process Methods 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 238000011160 research Methods 0.000 description 2
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- 208000031872 Body Remains Diseases 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 150000001339 alkali metal compounds Chemical class 0.000 description 1
- 239000002585 base Substances 0.000 description 1
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- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910001456 vanadium ion Inorganic materials 0.000 description 1
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Abstract
本发明公开了一种钛酸锶基巨介电陶瓷制备方法,涉及电子陶瓷领域,SrTi0.994Nb0.004V0.001Ta0.001O3以二氧化钛,碳酸锶和五氧化二铌、五氧化二钒、五氧化二钽为原料,混合均匀后球磨,干燥后将粉体在空气中预烧,将预烧后的粉料添加PVA混合均匀,研磨后加入粘合剂PVB以及塑化剂BBP造粒并压制成型,然后放到气氛烧结炉中,使样品在氢气、氩气、氮气混合气氛中烧结成瓷,之后将样品置于真空‑氧气气氛中退火,得到介电性能良好的巨介电陶瓷并且具有良好的温度和频率稳定性。
Description
技术领域
本发明涉及电子陶瓷领域,具体涉及一种SrTi0.994Nb0.004V0.001Ta0.001O3巨介电陶瓷材料的制备方法。
背景技术
微电子信息技术的快速发展对电子元器件的微型化、集成化提出了更高的要求,作为电子元器件的重要组分部分,电介质陶瓷的研究受到人们越来越多的关注。随着信息技术领域尤其是电子和微电子行业的发展以及极端环境下的工作需要,具有良好的温度和频率稳定性的巨介电常数、低介电损耗的电介质材料有着广泛的应用前景。
具有钙钛矿结构的陶瓷材料一直因其巨大的介电常数和和很低的介电损耗而备受关注,并且钙钛矿结构陶瓷材料能够在很宽的温度和频率范围内保持稳定性。近年来,电子元器件日新月异,小型化、高效能和低功耗成为重要发展方向,并且对器件的各种声光电热磁等性能有了更多细致的要求。这也要求去研究更多元素的物理化学性能,开发出更多的新材料种类来满足不同层次的需求。
位于第五副族的三种元素钒、铌、钽均为非铁磁性元素,并且已经在生产和生活中得到广泛运用,研究并进一步发展这些元素的应用具有重要的经济效益。例如,用钽电容器用在军事国防等消费领域,但钽元素资源紧缺,因此钽元素成了一种战略性资源。铌元素的碱金属化合物,例如Li2NbO3(铌酸锂)具有钙钛矿型偏三方晶体结构,而钴酸锂是一种常见的电极材料。研究已经表明Nb与Ta共掺杂可以形成复合钙钛矿基结构,并且由于两者的最外层电子数相同,可以在晶体内部形成缺陷偶极子,同时释放出离域电子。因此尝试用碳酸锶、五氧化二铌、二氧化钛、五氧化二钽去合成复合钙钛矿基陶瓷材料,化学式中Ta5+、Nb5+,通过施主与受主共掺杂作用,形成缺陷偶极子,而钒离子与二者有着相近的原子半径,且是常见的制备巨介电陶瓷体原料。目前关于SrTi0.994Nb0.004V0.001Ta0.001O3制备方法的报告还很少见,作为一种具有潜在的广泛应用价值的材料,有必要探索一种合适并且利于推广的制备工艺,以更好的研究SrTi0.994Nb0.004V0.001Ta0.001O3巨介电陶瓷的结构、性能。
发明内容
本发明的目的在于克服现有技术存在的以上问题,提供一种钛酸锶基巨介电陶瓷制备方法,本发明获得的SrTi0.994Nb0.004V0.001Ta0.001O3陶瓷是典型的钛酸锶基复合钙钛矿结构材料之一,并且测得其有很高的介电常数以及良好的温度和频率稳定性。
为实现上述技术目的,达到上述技术效果,本发明通过以下技术方案实现:
一种钛酸锶基巨介电陶瓷制备方法,所述巨介电陶瓷材料的结构式为SrTi0.994Nb0.004V0.001Ta0.001O3,其特征在于制备方法包括以下步骤:
(1)以碳酸锶、二氧化钛、五氧化二铌、五氧化二钒、五氧化二钽为原料,按摩尔比1:0.994:0.004:0.001:0.001进行配料,获得原料混合物;
(2)将步骤(1)配制好的原料混合物投入至球磨机中,加入氧化锆球和无水乙醇为球磨介质,在球磨机中混合均匀,然后将混合后的浆料烘干,获得粉体;
(3)将步骤(2)中获得的粉体置于空气炉中,以速率为3℃/min升温至1150℃,然后保温2小时,在高温中原料进行充分反应,获得化合物粉体;
(4)将步骤(3)中获得的化合物粉体与PVA混合并研磨,之后加入塑化剂BBP与粘合剂PVB,用玛瑙研钵研磨30分钟后,过金属筛,获得颗粒状粉末,所述PVA的质量百分比浓度为5%,加入质量为化合物粉体质量的15%,所述BBP和所述PVB的质量百分比浓度分别为7%与5%,加入质量均为化合物粉体质量的10%;
(5)将步骤(4)获得的带PVA、BBP以及PVB的颗粒状粉末,在单向压力10MPa下压制成型,获得块体;
(6)将步骤(5)成型的块体,置于空气炉中进行排胶;
(7)将步骤(6)排胶后的块体置于气氛烧结炉中进行烧结,具体是先抽真空,然后通入混合气体,混合气体中氢气、氩气、氮气的体积比为1:15:10,保持压力在一个大气压,气体流速为100ml/min,以3℃/min的升温速率升至1400℃,保温120分钟进行烧结,然后以自然降温的速度降到室温,撤去气氛,即得到SrTi0.994Nb0.004V0.001Ta0.001O3巨介电陶瓷体;
(8)将步骤(7)中形成的巨介电陶瓷体置于气氛管式炉中进行退火,具体是先用压缩机将烧结管抽为真空状态,随后进行加热,升温速率3℃/min,保持管道内的真空状态,待温度升至900℃时,缓慢通入氧气,直至保持管道内部与大气压一致,保持气体流速为100ml/min,当温度升高到1000℃,保温120min进行热处理,然后以自然降温速率降到室温,最后撤去氧气气氛,即得到在真空-氧气中退火的SrTi0.994Nb0.004V0.001Ta0.001O3陶瓷体。
进一步包括,步骤(2)中加入的氧化锆球的尺寸为2mm,质量为步骤(1)中原料混合物质量的4~6倍,加入的无水乙醇质量为原料混合物质量的1~2倍。
进一步包括,步骤(2)中的球磨机为行星式球磨机,原料混合物在行星式球磨机中球磨混合24小时,转速为250转/分钟。
进一步包括,步骤(2)中将球磨混合后的浆料取出,在80℃温度下烘干,获得粉体。
进一步包括,步骤(4)中的金属筛选用80目,反复过筛2次。
进一步包括,所述碳酸锶、五氧化二铌、二氧化钛、五氧化二钒、五氧化二钽均为分析纯或高纯原料。
进一步包括,步骤(6)的排胶过程中,升温速率为3℃/min,升温至600℃后,保温2小时,然后以3℃/min的降温速率降至室温。
本发明的有益效果是:
1.本发明提供了一种SrTi0.994Nb0.004V0.001Ta0.001O3巨介电陶瓷材料的制备方法,在三种混合还原性气氛中烧结陶瓷,有利于SrTi0.994Nb0.004V0.001Ta0.001O3陶瓷体保持稳定,其中,氢气的高还原性使得陶瓷内部得以形成氧原子空位,氮气使得晶粒生长更加致密与细小,有利于抑制晶粒的不规则生长,而惰性气体氩气则保证了烧结过程安全稳定;本发明所涉及的化合物在整个高温合成过程中均保持在气氛状态,抑制了由于晶格应变等导致的第二相的出现,从而可以得到纯的SrTi0.994Nb0.004V0.001Ta0.001O3陶瓷体。
2.本发明在真空-氧气气氛中退火,在一定范围内填充了氧原子空位,有利于形成介电性质稳定的钛酸锶基陶瓷。
3.本发明获得的SrTi0.994Nb0.004V0.001Ta0.001O3陶瓷是典型的钛酸锶基复合钙钛矿结构材料之一,并且测得其有很高的介电常数以及良好的温度和频率稳定性。
附图说明
图1为本发明实施例1(a)、实施例2(b)、对比例1(c)、对比例2(d)、对比例3(e)成品陶瓷的SEM图。
图2为本发明实施例1、实施例2、对比例1、对比例2、对比例3成品陶瓷的相对介电常数频谱图以及介电损耗频谱图。
图3为本发明各实施例和比较例步骤3获得的SrTi0.994Nb0.004V0.001Ta0.001O3粉体的XRD扫描图谱。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
以下实施例中的巨介电陶瓷材料按照化学反应式TiO2+SrCO3+Nb2O5+V2O5+Ta2O5→SrTi(1-x-y-z)NbxVyTazO3制得,其中,二氧化钛、碳酸锶、五氧化二铌、五氧化二钒、五氧化二钽的摩尔比为1:0.994:0.004:0.001:0.001。
使用的二氧化钛、碳酸锶、五氧化二铌、五氧化二钒、五氧化二钽均为分析纯。
实施例1
制备SrTi0.994Nb0.004V0.001Ta0.001O3巨介电陶瓷材料,具体制备步骤为:
(1)以碳酸锶、二氧化钛、五氧化二铌、五氧化二钒、五氧化二钽为原料,按通式SrTi0.994Nb0.004V0.001Ta0.001O3化学计量比(摩尔比)进行配料,获得原料混合物;
(2)将步骤(1)配制好的原料混合物放到球磨机中,加入尺寸为2mm的氧化锆球和无水乙醇为球磨介质,所加的氧化锆球质量为原料混合物质量的4倍,所加的无水乙醇质量为原料混合物质量的1倍,在行星式球磨机中球磨混合24小时,转速为250转/分钟,将混合后的浆料取出在80℃烘干,获得粉体;
(3)将步骤(2)中获得的粉体置于空气炉中,以速率为3℃/min升温至1150℃,然后保温2小时,在高温中原料进行充分反应,获得化合物粉体;
(4)将步骤(3)中获得的化合物粉体与PVA混合并研磨,之后加入塑化剂BBP与粘合剂PVB,用玛瑙研钵研磨30分钟后,过80目金属筛,反复过筛2次,获得颗粒状粉末,所述PVA的质量百分比浓度为5%,加入质量为化合物粉体质量的15%,所述BBP和所述PVB的质量百分比浓度分别为7%与5%,加入质量均为化合物粉体质量的10%;
(5)将步骤(4)的颗粒状粉体在单向压力10MPa下压制成型,获得块体;
(6)将步骤(5)成型的块体,置于空气炉中进行排胶,排胶过程中,升温速率为3℃/min,升温至600℃后,保温2小时,然后以3℃/min的降温速率降至室温;
(7)将步骤(6)排胶后的块体,置于气氛烧结炉中,先加抽真空,然后通入氢气、氩气和氮气的混合气体,混合气体中氢气、氩气、氮气的体积比为1:15:10,保持压力在一个大气压,气体流速为100ml/min,以3℃/min的升温速率升至1400℃,保温120分钟进行烧结,然后以自然降温速率降到室温,最后撤去气氛,即得到复合钙钛矿氧化物SrTi0.994Nb0.004V0.001Ta0.001O3陶瓷体。
实施例2
制备SrTi0.994Nb0.004V0.001Ta0.001O3巨介电陶瓷材料,制备步骤1(1)-(7)同实施例1,还包括制备步骤(8):
(8)将步骤(7)成型的陶瓷体,置于气氛管式炉中,先用压缩机将烧结管抽为真空状态,随后进行加热,升温速率3℃/min,保持管道内的真空状态,待温度升至900℃时,缓慢通入氧气,直至保持管道内部与大气压一致,保持气体流速为100ml/min,当温度升高到1000℃,保温120min进行热处理,然后以自然降温速率降到室温,最后撤去氧气气氛,即得到在真空-氧气中退火的SrTi0.994Nb0.004V0.001Ta0.001O3陶瓷体。
对比例1
制备SrTi0.994Nb0.004V0.001Ta0.001O3巨介电陶瓷材料,具体制备步骤(1)-(6)同实施例1,改变步骤(7)中的烧结气氛:
(7)将步骤(6)排胶后的块体,置于气氛烧结炉中,先抽真空,然后缓慢通入氮气,保持氮气流速为100ml/min,以3℃/min的升温速率升至1400℃,保温120分钟进行烧结,然后以自然降温速率降到室温,即得到在氮气气氛中烧结制成的复合钙钛矿氧化物SrTi0.994Nb0.004V0.001Ta0.001O3陶瓷体。
对比例2
制备SrTi0.994Nb0.004V0.001Ta0.001O3巨介电陶瓷材料,具体制备步骤(1)-(7)同比较例1,还包括步骤(8):
(8)将步骤(7)成型的陶瓷体,置于气氛管式炉中,先用压缩机将烧结管抽为真空状态,随后进行加热,升温速率3℃/min,保持管道内的真空状态,待温度升至900℃时,缓慢通入氧气,直至保持管道内部与大气压一致,保持气体流速为100ml/min,当温度升高到1000℃,保温120min进行热处理,然后以自然降温速率降到室温,最后撤去氧气气氛,即得到在真空-氧气中退火的SrTi0.994Nb0.004V0.001Ta0.001O3陶瓷体。
对比例3
制备SrTi0.994Nb0.004V0.001Ta0.001O3巨介电陶瓷材料,具体制备步骤(1)-(5)同实施例1,步骤(6)为:
(6)将步骤(5)成型的块体,置于普通烧结炉中,以3℃/min的升温速率升至1400℃,保温120分钟进行烧结,然后以自然降温速率降到室温,即得到在空气中烧结制成的复合钙钛矿氧化物SrTi0.994Nb0.004V0.001Ta0.001O3陶瓷体。
微观形貌分析
参考图1,图1中分别为在实施例1(a)、实施例2(b)、对比例1(c)、对比例2(d)、对比例3(e)中烧结条件下合成的SrTi0.994Nb0.004V0.001Ta0.001O3陶瓷扫描电镜图,从该图可以看出,混合气氛烧结对巨介电陶瓷材料理化性质的影响。通过图1中SEM图片对比发现,在气氛烧结的条件下合成了更加致密的陶瓷,晶粒更加均匀的陶瓷,并且气孔数量减少。而在混合气氛中烧结并在真空-氧气中退火的陶瓷体(b),比只在氮气中烧结的陶瓷体(c-d)更加细致,且更加均匀,因此提高了陶瓷的力学性能。
实施例1和对比例1中,在气氛条件下(包括氮气气氛)有利于SrTi0.994Nb0.004V0.001Ta0.001O3陶瓷体的晶粒保持稳定。本发明所涉及的化合物在整个高温合成过程中均保持在气氛状态,抑制了由于晶格应变等导致的第二相的出现,从而可以得到纯的SrTi0.994Nb0.004V0.001Ta0.001O3陶瓷体。实施例2中经过退火处理获得的SrTi0.994Nb0.004V0.001Ta0.001O3陶瓷是典型的Nb基复合钙钛矿结构材料之一,具有较高的晶粒密度以及致密性。
介电性能
图2中分别为在三种制备工艺下合成的SrTi0.994Nb0.004V0.001Ta0.001O3陶瓷的介电系数频谱(a)与介电损耗频谱(b)。从该图可以看出,混合气氛烧结对巨介电陶瓷材料介电性质的影响。混合气氛中烧结,并在真空-氧气气氛中退火,会形成介电系数稳定在30000左右的巨介电陶瓷,并且有较低的介电损耗(<0.2)。作为对比,对比例3中在不加气氛的情况下使用固相合成法制备出SrTi0.994Nb0.004V0.001Ta0.001O3陶瓷,其介电系数将会远远降低,不适合作为陶瓷电容器使用。
只在氮气气氛(对比例1),或者只在混合气氛(实施例1)中烧结而成的陶瓷,不进行后续退火处理时,也可获得较高介电系数,但其频率的稳定性差、介电损耗高。而经历过步骤8的退火后,可以获得稳定较高的介电系数,以及低的介电损耗。
相结构分析
图3中显示了在1150℃煅烧120min(步骤3)形成的SrTi0.994Nb0.004V0.001Ta0.001O3粉体在X射线下的衍射图谱,从图中可看出其相结构为立方钙钛矿相,并且不含有杂相,证明该煅烧制度可行且合理。
对所公开的实施例的上述说明,使本领域专业技术人员能够实现或使用本发明。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的,本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下,在其它实施例中实现。因此,本发明将不会被限制于本文所示的这些实施例,而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。
Claims (7)
1.一种钛酸锶基巨介电陶瓷制备方法,所述巨介电陶瓷材料的结构式为SrTi0.994Nb0.004V0.001Ta0.001O3,其特征在于制备方法包括以下步骤:
(1)以碳酸锶、二氧化钛、五氧化二铌、五氧化二钒、五氧化二钽为原料,按摩尔比1:0.994:0.004:0.001:0.001进行配料,获得原料混合物;
(2)将步骤(1)配制好的原料混合物投入至球磨机中,加入氧化锆球和无水乙醇为球磨介质,在球磨机中混合均匀,然后将混合后的浆料烘干,获得粉体;
(3)将步骤(2)中获得的粉体置于空气炉中,以速率为3℃/min升温至1150℃,然后保温2小时,在高温中原料进行充分反应,获得化合物粉体;
(4)将步骤(3)中获得的化合物粉体与PVA混合并研磨,之后加入塑化剂BBP与粘合剂PVB,用玛瑙研钵研磨30分钟后,过金属筛,获得颗粒状粉末,所述PVA的质量百分比浓度为5%,加入质量为化合物粉体质量的15%,所述BBP和所述PVB的质量百分比浓度分别为7%与5%,加入质量均为化合物粉体质量的10%;
(5)将步骤(4)获得的带PVA、BBP以及PVB的颗粒状粉末,在单向压力10MPa下压制成型,获得块体;
(6)将步骤(5)成型的块体,置于空气炉中进行排胶;
(7)将步骤(6)排胶后的块体置于气氛烧结炉中进行烧结,具体是先抽真空,然后通入混合气体,混合气体中氢气、氩气、氮气的体积比为1:15:10,保持压力在一个大气压,气体流速为100ml/min,以3℃/min的升温速率升至1400℃,保温120分钟进行烧结,然后以自然降温的速度降到室温,撤去气氛,即得到SrTi0.994Nb0.004V0.001Ta0.001O3巨介电陶瓷体;
(8)将步骤(7)中形成的巨介电陶瓷体置于气氛管式炉中进行退火,具体是先用压缩机将烧结管抽为真空状态,随后进行加热,升温速率3℃/min,保持管道内的真空状态,待温度升至900℃时,缓慢通入氧气,直至保持管道内部与大气压一致,保持气体流速为100ml/min,当温度升高到1000℃,保温120min进行热处理,然后以自然降温速率降到室温,最后撤去氧气气氛,即得到在真空-氧气中退火的SrTi0.994Nb0.004V0.001Ta0.001O3陶瓷体。
2.根据权利要求1所述的一种钛酸锶基巨介电陶瓷制备方法,其特征在于步骤(2)中加入的氧化锆球的尺寸为2mm,质量为步骤(1)中原料混合物质量的4~6倍,加入的无水乙醇质量为原料混合物质量的1~2倍。
3.根据权利要求1所述的一种钛酸锶基巨介电陶瓷制备方法,其特征在于步骤(2)中的球磨机为行星式球磨机,原料混合物在行星式球磨机中球磨混合24小时,转速为250转/分钟。
4.根据权利要求1所述的一种钛酸锶基巨介电陶瓷制备方法,其特征在于步骤(2)中将球磨混合后的浆料取出,在80℃温度下烘干,获得粉体。
5.根据权利要求1所述的一种钛酸锶基巨介电陶瓷制备方法,其特征在于步骤(4)中的金属筛选用80目,反复过筛2次。
6.根据权利要求1所述的一种钛酸锶基巨介电陶瓷制备方法,其特征在于所述碳酸锶、五氧化二铌、二氧化钛、五氧化二钒、五氧化二钽均为分析纯或高纯原料。
7.根据权利要求1所述的一种钛酸锶基巨介电陶瓷制备方法,其特征在于步骤(6)的排胶过程中,升温速率为3℃/min,升温至600℃后,保温2小时,然后以3℃/min的降温速率降至室温。
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