CN116024523A - 掩膜板及其制备方法 - Google Patents

掩膜板及其制备方法 Download PDF

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Publication number
CN116024523A
CN116024523A CN202211563012.6A CN202211563012A CN116024523A CN 116024523 A CN116024523 A CN 116024523A CN 202211563012 A CN202211563012 A CN 202211563012A CN 116024523 A CN116024523 A CN 116024523A
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CN
China
Prior art keywords
region
area
mask
auxiliary pixel
pixel openings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202211563012.6A
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English (en)
Chinese (zh)
Inventor
李伟丽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kunshan Govisionox Optoelectronics Co Ltd
Original Assignee
Kunshan Govisionox Optoelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kunshan Govisionox Optoelectronics Co Ltd filed Critical Kunshan Govisionox Optoelectronics Co Ltd
Priority to CN202211563012.6A priority Critical patent/CN116024523A/zh
Publication of CN116024523A publication Critical patent/CN116024523A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
CN202211563012.6A 2018-03-30 2018-03-30 掩膜板及其制备方法 Pending CN116024523A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202211563012.6A CN116024523A (zh) 2018-03-30 2018-03-30 掩膜板及其制备方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202211563012.6A CN116024523A (zh) 2018-03-30 2018-03-30 掩膜板及其制备方法
CN201810277643.9A CN108456846A (zh) 2018-03-30 2018-03-30 掩膜板及其制备方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201810277643.9A Division CN108456846A (zh) 2018-03-30 2018-03-30 掩膜板及其制备方法

Publications (1)

Publication Number Publication Date
CN116024523A true CN116024523A (zh) 2023-04-28

Family

ID=63237826

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202211563012.6A Pending CN116024523A (zh) 2018-03-30 2018-03-30 掩膜板及其制备方法
CN201810277643.9A Pending CN108456846A (zh) 2018-03-30 2018-03-30 掩膜板及其制备方法

Family Applications After (1)

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CN201810277643.9A Pending CN108456846A (zh) 2018-03-30 2018-03-30 掩膜板及其制备方法

Country Status (7)

Country Link
US (1) US20190345599A1 (enExample)
EP (1) EP3640365A4 (enExample)
JP (1) JP6977140B2 (enExample)
KR (1) KR20200028483A (enExample)
CN (2) CN116024523A (enExample)
TW (1) TWI726240B (enExample)
WO (1) WO2019184205A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109487206B (zh) * 2018-12-11 2020-08-11 武汉华星光电半导体显示技术有限公司 掩膜版及采用该掩膜版的掩膜装置
CN110760790A (zh) * 2019-02-28 2020-02-07 云谷（固安）科技有限公司 掩膜板及掩膜组件
CN110760791A (zh) * 2019-02-28 2020-02-07 云谷（固安）科技有限公司 掩膜板及掩膜组件
CN109913805B (zh) * 2019-03-27 2021-01-26 京东方科技集团股份有限公司 一种掩膜版
JP7749925B2 (ja) * 2020-03-13 2025-10-07 大日本印刷株式会社 有機デバイスの製造装置の蒸着室の評価方法
KR102836687B1 (ko) * 2020-05-11 2025-07-22 삼성디스플레이 주식회사 마스크 검사 장치 및 이를 이용한 마스크 검사 방법
CN116657099A (zh) * 2023-05-31 2023-08-29 京东方科技集团股份有限公司 遮挡用金属掩膜板、张网组件、掩膜板以及显示面板

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104846328A (zh) * 2014-02-14 2015-08-19 三星显示有限公司 掩模框架组件及其制造方法
JP2017210657A (ja) * 2016-05-26 2017-11-30 大日本印刷株式会社 蒸着マスク、フレーム付き蒸着マスク、有機半導体素子の製造方法、及びに有機ｅｌディスプレイの製造方法
CN107435131A (zh) * 2017-09-29 2017-12-05 上海天马微电子有限公司 掩膜装置、蒸镀设备以及掩膜装置制备方法

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JP4608874B2 (ja) * 2003-12-02 2011-01-12 ソニー株式会社 蒸着マスクおよびその製造方法
JP4915312B2 (ja) * 2007-08-08 2012-04-11 ソニー株式会社 蒸着用マスクの製造方法
CN202530150U (zh) * 2012-01-16 2012-11-14 昆山允升吉光电科技有限公司 蒸镀掩模板
CN103014618A (zh) * 2012-12-25 2013-04-03 唐军 蒸镀用掩模板及其制造方法
US20160043319A1 (en) * 2013-04-22 2016-02-11 Applied Materials, Inc. Actively-aligned fine metal mask
KR102106331B1 (ko) * 2013-07-08 2020-05-06 삼성디스플레이 주식회사 마스크 조립체 및 이의 제조 방법
KR102106336B1 (ko) * 2013-07-08 2020-06-03 삼성디스플레이 주식회사 증착용 마스크
CN104593721B (zh) * 2013-10-30 2017-08-08 昆山国显光电有限公司 一种蒸镀用精密金属掩膜板的张网方法及其获得的掩膜板
US10022748B2 (en) * 2014-09-12 2018-07-17 Toshiba Memory Corporation Stencil mask, stencil mask manufacturing method, and imprinting method
CN104630705A (zh) * 2015-03-13 2015-05-20 合肥鑫晟光电科技有限公司 一种掩膜板及其制备方法
KR102541449B1 (ko) * 2015-12-22 2023-06-09 삼성디스플레이 주식회사 박막 증착용 마스크 어셈블리
KR102366019B1 (ko) * 2016-06-28 2022-02-23 다이니폰 인사츠 가부시키가이샤 증착 마스크, 유기 반도체 소자의 제조 방법 및 유기 el 디스플레이의 제조 방법
CN205844737U (zh) * 2016-07-29 2016-12-28 昆山国显光电有限公司 掩膜板
US20180040855A1 (en) * 2016-08-04 2018-02-08 Hon Hai Precision Industry Co., Ltd. Deposition mask for making oled display panel
CN206512267U (zh) * 2016-10-28 2017-09-22 京东方科技集团股份有限公司 一种掩模片及掩模板
CN106502044B (zh) * 2017-01-10 2020-01-24 昆山国显光电有限公司 掩膜板及其制造方法
JP6304412B2 (ja) * 2017-02-06 2018-04-04 大日本印刷株式会社 金属フレーム付き蒸着マスクの製造方法、有機半導体素子の製造方法、パターンの形成方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104846328A (zh) * 2014-02-14 2015-08-19 三星显示有限公司 掩模框架组件及其制造方法
JP2017210657A (ja) * 2016-05-26 2017-11-30 大日本印刷株式会社 蒸着マスク、フレーム付き蒸着マスク、有機半導体素子の製造方法、及びに有機ｅｌディスプレイの製造方法
CN107435131A (zh) * 2017-09-29 2017-12-05 上海天马微电子有限公司 掩膜装置、蒸镀设备以及掩膜装置制备方法

Also Published As

Publication number Publication date
US20190345599A1 (en) 2019-11-14
CN108456846A (zh) 2018-08-28
EP3640365A4 (en) 2020-08-19
KR20200028483A (ko) 2020-03-16
TW201843864A (zh) 2018-12-16
TWI726240B (zh) 2021-05-01
JP6977140B2 (ja) 2021-12-08
WO2019184205A1 (zh) 2019-10-03
JP2020526670A (ja) 2020-08-31
EP3640365A1 (en) 2020-04-22

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