CN115943499A - 光接收模块 - Google Patents
光接收模块 Download PDFInfo
- Publication number
- CN115943499A CN115943499A CN202080100018.2A CN202080100018A CN115943499A CN 115943499 A CN115943499 A CN 115943499A CN 202080100018 A CN202080100018 A CN 202080100018A CN 115943499 A CN115943499 A CN 115943499A
- Authority
- CN
- China
- Prior art keywords
- light receiving
- transmission line
- receiving module
- block
- receiving element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title description 4
- 230000005540 biological transmission Effects 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 229910000679 solder Inorganic materials 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000005394 sealing glass Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/0271—Housings; Attachments or accessories for photometers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J1/46—Electric circuits using a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
- H01P3/08—Microstrips; Strip lines
- H01P3/081—Microstriplines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6611—Wire connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Light Receiving Elements (AREA)
Abstract
多个引线引脚(2a~2d)贯通圆形的管座(1),并具有信号用引线引脚(2a、2b)。块体(4)设置于管座(1)的上表面。波导型受光元件(9)设置于块体(4)的侧面。放大器(6)设置于块体(4)的侧面,对从波导型受光元件(9)输出的电信号进行放大。第一中继基板(11)设置于管座(1)的上表面,并配置在块体(4)与信号用引线引脚(2a、2b)之间。第一传输线路(12a、12b)设置于第一中继基板(11)。第一导线(10f、10g)将第一传输线路(12a、12b)的一端与放大器(6)的输出端子连接。第二导线(10h、10i)将第一传输线路(12a、12b)的另一端与信号用引线引脚(2a、2b)连接。
Description
技术领域
本公开涉及光接收模块。
背景技术
波导型受光元件是能够兼顾高灵敏度和宽频带的端面入射型的受光元件。提出一种将这样的端面入射型的受光元件搭载于小型/低价的CAN封装的光接收模块(例如,参照专利文献1)。
专利文献1:日本特开2004-88046号公报
在现有的模块中,存在如下问题:将设置于管座上的块体的侧面的放大器与信号用的引线引脚连接的导线的长度变长,导线的电感增加而使频带劣化。
另外,除了信号用的引线引脚以外,多个引线引脚也贯通管座。若为了缩短导线而使信号用的引线引脚接近块体,则多个引线引脚配置的自由度下降。因此,无法以圆形的管座的半径变小的方式配置多个引线引脚,因此存在模块变大的问题。
发明内容
本公开是为了解决上述课题所做出的,其目的在于得到一种防止频带的劣化并且能够小型化的光接收模块。
本公开的光接收模块,其特征在于,具备:圆形的管座;多个引线引脚,它们贯通所述管座,并具有信号用引线引脚;块体,其设置于所述管座的上表面;波导型受光元件,其设置于所述块体的侧面;放大器,其设置于所述块体的所述侧面,并对从所述波导型受光元件输出的电信号进行放大;第一中继基板,其设置于所述管座的所述上表面,并配置在所述块体与所述信号用引线引脚之间;第一传输线路,其设置于所述第一中继基板;第一导线,其将所述第一传输线路的一端与所述放大器的输出端子连接;以及第二导线,其将所述第一传输线路的另一端与所述信号用引线引脚连接。
在本公开中,通过在管座的上表面设置中继基板,从而提高多个引线引脚的配置的自由度,能够以圆形的管座的半径变小的方式配置多个引线引脚。另外,通过使用中继基板,放大器与信号用引线引脚之间的导线的长度变短,导线的电感降低。其结果能够得到防止频带劣化并且能够小型化的光接收模块。
附图说明
图1是表示实施方式1的光接收模块的立体图。
图2是实施方式1的光接收模块的电路图。
图3是表示波导型受光元件的剖视图。
图4是表示比较例的光接收模块的俯视图。
图5是表示实施方式1的光接收模块的俯视图。
图6是表示实施方式1的光接收模块的变形例的放大侧视图。
图7是表示实施方式1的光接收模块的变形例的放大侧视图。
图8是表示实施方式2的光接收模块的立体图。
图9是表示实施方式3的光接收模块的立体图。
具体实施方式
参照附图对实施方式的光接收模块进行说明。对相同或对应的构成要素标注相同的附图标记,有时省略重复说明。
实施方式1.
图1是表示实施方式1的光接收模块的立体图。图2是实施方式1的光接收模块的电路图。管座1是圆形的导电体且成为接地电位。
信号用的引线引脚2a、2b和电源用的引线引脚2c、2d贯通管座1。由于在管座1与引线引脚2a~2d之间设置有绝缘性的密封玻璃3,因此两者相互绝缘。引线引脚2a~2d的前端从管座1的上表面突出。
在管座1的上表面设置有块体4,管座1的上表面与块体4的下表面接合。在本实施方式中,块体4为导电体,与管座1连接而成为接地电位。副支架5、TIA(TransimpedanceAmplifier:跨阻放大器)6、电容器7、8设置于块体4的一个侧面。波导型受光元件9安装于副支架5。波导型受光元件9为PD(Photo Diode)或APD(Avalanche Photo Diode)。这样由于多个结构设置于块体4的一个侧面,因此块体4的横向宽度比引线引脚2c、2d的间隔宽。
电容器7、8的下表面电极与块体4连接。电容器7、8的上表面电极分别通过导线10a、10b与引线引脚2c、2d连接。电容器7的上表面电极通过导线10c而与波导型受光元件9的阴极电极连接。电容器8的上表面电极通过导线10d而与TIA6的电源端子连接。波导型受光元件9的阳极电极通过导线10e而与TIA6的输入端子连接。
由绝缘体构成的中继基板11设置于管座1的上表面,并配置在块体4与引线引脚2a、2b之间。在中继基板11设置有传输线路12a、12b。传输线路12a的一端通过导线10f而与TIA6的正相输出端子连接。传输线路12b的一端通过导线10g而与TIA6的反相输出端子连接。传输线路12a、12b的另一端分别通过导线10h、10i而与引线引脚2a、2b连接。导线10a~10i例如为Au导线。
具有透镜13的帽14以覆盖波导型受光元件9等的方式固定于管座1的上表面。波导型受光元件9配置为端面相对于来自光纤15的入射光的光轴大致垂直。来自光纤15的入射光被透镜13聚光,并入射到波导型受光元件9的端面。因此,波导型受光元件9配置于圆形的管座1的中央部。
波导型受光元件9将入射的光信号转换为电信号。TIA6是将从波导型受光元件9输出的电信号放大的差分放大器。TIA6的差分输出信号经由传输线路12a、12b以及引线引脚2a、2b向模块外部输出。引线引脚2c为了向波导型受光元件9供给电力而设置。引线引脚2d为了向TIA6供给电力而设置。
图3是表示波导型受光元件的剖视图。在半导体基板16之上设置有半导体层叠构造17。半导体层叠构造17具有波导18。在半导体层叠构造17之上设置有阳极电极19。在半导体基板16之上设置有阴极电极20。波导18成为波导型受光元件9的受光部。
接着,将本实施方式的效果与比较例进行比较来说明。图4是表示比较例的光接收模块的俯视图。在比较例中不存在中继基板11。因此,TIA6的正相输出端子和反相输出端子分别通过导线10h、10i直接与引线引脚2a、2b连接。若为了缩短导线10h、10i而使信号用的引线引脚2a、2b接近于块体4,则多个引线引脚2a~2d排成一列。而且,信号用的引线引脚2a、2b与电源用的引线引脚2c、2d需要分开一定程度的距离。因此导致圆形的管座1的半径变大。
图5是表示实施方式1的光接收模块的俯视图。将TIA6与信号用的引线引脚2a、2b之间连接的中继基板11设置于管座1的上表面。中继基板11配置在电源用的引线引脚2c、2d之间。这样通过使用中继基板11,多个引线引脚2a~2d的配置的自由度上升,能够以圆形的管座1的半径变小的方式配置多个引线引脚2a~2d。另外,通过使用中继基板11而使TIA6与信号用的引线引脚2a、2b之间的导线的长度变短,导线的电感降低。其结果能够得到防止频带劣化并且能够小型化的光接收模块。
图6和图7是表示实施方式1的光接收模块的变形例的放大侧视图。在图6中,透镜21通过粘接剂22粘接于波导型受光元件9的端面。在图7中,在波导型受光元件9的端面的前方处透镜21通过粘接剂22粘接于副支架5。由此,光纤15与波导型受光元件9的光耦合容差扩大,能够缓和安装位置精度。
实施方式2.
图8是表示实施方式2的光接收模块的立体图。由绝缘体构成的中继基板23设置于块体4的侧面。在中继基板23设置有传输线路24a、24b。传输线路24a的一端通过导线10f与TIA6的正相输出连接。传输线路24b的一端通过导线10g与TIA6的反相输出连接。传输线路24a、24b的另一端分别通过导线10j、10k与传输线路12a、12b连接。另外,也可以将两个中继基板11、23一体化而成为截面L字型的中继基板。
在此,若为了调整波导型受光元件9的高度而使块体4变高,则在实施方式1中,将块体4的侧面的TIA6与管座1的上表面的中继基板11的传输线路12a、12b连接的导线10f、10g变长,导线的电感上升。相对于此,在本实施方式中,通过在块体4的侧面也使用中继基板23,从而能够缩短导线10f、10g、10j、10k。由此,能够降低电感,抑制频带的劣化。
另外,在实施方式1中,在将处于正交的平面上的TIA6与中继基板11进行导线连接时需要毛细管动作的空间,因此导线变长。相对于此,在本实施方式中,在将处于同一平面上的TIA6与中继基板23之间进行导线连接时具有供毛细管动作的空间的余量,因此能够缩短导线。其他结构以及效果与实施方式1相同。
另外,也可以通过焊料将传输线路24a、24b连接于传输线路12a、12b。由此能够缩短整体的导线长,因此能够进一步降低电感。
实施方式3.
图9是表示实施方式3的光接收模块的立体图。在本实施方式中,块体4由陶瓷等绝缘性材料构成。在块体4的表面设置有GND用布线图案25和传输线路24a、24b。传输线路24a、24b的一端分别通过导线10f、10g与TIA6的正相输出和反相输出连接。传输线路24a、24b的另一端分别通过焊料26a、26b与传输线路12a、12b接合。另外,也可以通过导线将传输线路24a、24b与传输线路12a、12b连接。在本实施方式中,通过在绝缘性的块体4的表面设置传输线路24a、24b,从而能够省略块体4上的中继基板23。其他结构以及效果与实施方式2相同。
附图标记说明
1…管座;2a、2b…引线引脚(信号用引线引脚);2c…引线引脚(第一电源用引线引脚);2d…引线引脚(第二电源用引线引脚);4…块体;5…副支架;9…波导型受光元件;10f、10g…导线(第一导线);10h、10i…导线(第二导线);11…中继基板(第一中继基板);12a、12b…传输线路(第一传输线路);21…透镜;23…中继基板(第二中继基板);24a、24b…传输线路(第二传输线路);26a、26b…焊料。
Claims (8)
1.一种光接收模块,其特征在于,具备:
圆形的管座;
多个引线引脚,它们贯通所述管座,并具有信号用引线引脚;
块体,其设置于所述管座的上表面;
波导型受光元件,其设置于所述块体的侧面;
放大器,其设置于所述块体的所述侧面,并对从所述波导型受光元件输出的电信号进行放大;
第一中继基板,其设置于所述管座的所述上表面,并配置在所述块体与所述信号用引线引脚之间;
第一传输线路,其设置于所述第一中继基板;
第一导线,其将所述第一传输线路的一端与所述放大器的输出端子连接;以及
第二导线,其将所述第一传输线路的另一端与所述信号用引线引脚连接。
2.根据权利要求1所述的光接收模块,其特征在于,
所述多个引线引脚具有:向所述波导型受光元件供给电力的第一电源用引线引脚、和向所述放大器供给电力的第二电源用引线引脚,
所述第一中继基板配置在所述第一电源用引线引脚与所述第二电源用引线引脚之间。
3.根据权利要求1或2所述的光接收模块,其特征在于,还具备:
第二中继基板,其设置于所述块体的所述侧面;和
第二传输线路,其设置于所述第二中继基板,
所述第二传输线路的一端与所述放大器的所述输出端子连接,另一端与所述第一传输线路的所述一端连接。
4.根据权利要求3所述的光接收模块,其特征在于,
所述第一中继基板与所述第二中继基板被一体化。
5.根据权利要求1或2所述的光接收模块,其特征在于,
还具备设置于所述块体的所述侧面的第二传输线路,
所述块体由绝缘性材料构成,
所述第二传输线路的一端与所述放大器的所述输出端子连接,所述第二传输线路的另一端与所述第一传输线路的所述一端连接。
6.根据权利要求3~5中的任一项所述的光接收模块,其特征在于,
所述第二传输线路的所述另一端通过焊料与所述第一传输线路的所述一端连接。
7.根据权利要求1~6中的任一项所述的光接收模块,其特征在于,
还具备粘接于所述波导型受光元件的端面的透镜。
8.根据权利要求1~6中的任一项所述的光接收模块,其特征在于,还具备:
副支架,其设置于所述块体的所述侧面,并安装有所述波导型受光元件;和
透镜,其在所述波导型受光元件的端面的前方处粘接于所述副支架。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2020/026367 WO2022009259A1 (ja) | 2020-07-06 | 2020-07-06 | 光受信モジュール |
Publications (1)
Publication Number | Publication Date |
---|---|
CN115943499A true CN115943499A (zh) | 2023-04-07 |
Family
ID=76083818
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202080100018.2A Pending CN115943499A (zh) | 2020-07-06 | 2020-07-06 | 光接收模块 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11953375B2 (zh) |
JP (1) | JP6879440B1 (zh) |
CN (1) | CN115943499A (zh) |
WO (1) | WO2022009259A1 (zh) |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6033318B2 (ja) * | 1978-07-14 | 1985-08-02 | 三菱電機株式会社 | 半導体発光装置の製造方法 |
JPH03150891A (ja) * | 1989-11-07 | 1991-06-27 | Mitsubishi Electric Corp | 半導体装置 |
JP3680303B2 (ja) * | 1994-11-08 | 2005-08-10 | 住友電気工業株式会社 | 光電変換モジュール |
JP2000028872A (ja) * | 1998-07-15 | 2000-01-28 | Furukawa Electric Co Ltd:The | 光モジュール |
US6920161B2 (en) | 2002-01-18 | 2005-07-19 | Oepic Semiconductors, Inc. | High-speed TO-can optoelectronic packages |
JP2003318418A (ja) | 2002-04-22 | 2003-11-07 | Sumitomo Electric Ind Ltd | 光受信モジュール |
JP2004088046A (ja) * | 2002-06-25 | 2004-03-18 | Sumitomo Electric Ind Ltd | 光受信器及びその製造方法 |
US7376312B2 (en) | 2002-11-05 | 2008-05-20 | Rohm Co., Ltd. | Optical module and method for manufacturing the same |
JP3947460B2 (ja) * | 2002-12-03 | 2007-07-18 | ローム株式会社 | 光モジュール |
JP2005159036A (ja) * | 2003-11-26 | 2005-06-16 | Matsushita Electric Ind Co Ltd | 光送受信モジュール |
JP5081837B2 (ja) * | 2006-02-17 | 2012-11-28 | フィニサー コーポレイション | フィードバックを制御する光受信機アセンブリ、光送受信モジュール及び光電受信パッケージ |
JP4894349B2 (ja) * | 2006-05-10 | 2012-03-14 | 富士通オプティカルコンポーネンツ株式会社 | ステムおよび光モジュール |
JP5188625B2 (ja) | 2009-06-02 | 2013-04-24 | 三菱電機株式会社 | 半導体光変調装置 |
JP2012114342A (ja) * | 2010-11-26 | 2012-06-14 | Renesas Electronics Corp | 光受信サブアセンブリ、光受信サブアセンブリの製造方法及び光受信モジュール |
JP2012227486A (ja) | 2011-04-22 | 2012-11-15 | Sumitomo Electric Device Innovations Inc | 光デバイス |
-
2020
- 2020-07-06 JP JP2020560417A patent/JP6879440B1/ja active Active
- 2020-07-06 CN CN202080100018.2A patent/CN115943499A/zh active Pending
- 2020-07-06 WO PCT/JP2020/026367 patent/WO2022009259A1/ja active Application Filing
- 2020-07-06 US US17/760,163 patent/US11953375B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20230051355A1 (en) | 2023-02-16 |
JPWO2022009259A1 (zh) | 2022-01-13 |
WO2022009259A1 (ja) | 2022-01-13 |
JP6879440B1 (ja) | 2021-06-02 |
US11953375B2 (en) | 2024-04-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6071016A (en) | Light receiving module for optical communication and light receiving unit thereof | |
US6074102A (en) | Optical device capable of operating at high speeds | |
US20200096711A1 (en) | Communication receiver | |
CN107015318B (zh) | 光接收器组件 | |
CN110380787B (zh) | 接收器组件 | |
US20140099123A1 (en) | Flexible printed circuit board and optical communication module including the same | |
CN108109971A (zh) | 半导体模块 | |
JPS59111123A (ja) | 担体により保持されたダイオ−ドを有する送信又は受信のための装置 | |
US20060133739A1 (en) | Silicon optical bench-based optical sub-assembly and optical transceiver using the same | |
US6900512B2 (en) | Light-receiving module | |
KR100400081B1 (ko) | 광전 모듈용 서브마운트 및 이를 이용한 실장 방법 | |
JP2007242708A (ja) | 光受信サブアセンブリ | |
JP4828103B2 (ja) | 光送受信モジュール | |
TWI663737B (zh) | 光模組 | |
CN112187371A (zh) | 光电平衡探测器及其接收模块和应用 | |
US6948863B2 (en) | Optical module and optical transceiver module | |
US6806547B2 (en) | Light-receiving module | |
CN115943499A (zh) | 光接收模块 | |
JP3972677B2 (ja) | 光モジュール | |
US20180011264A1 (en) | Optical module | |
US6922344B2 (en) | Device for connecting the terminal pins of a package for an optical transmitting and/or receiving device to a printed circuit board and conductor arrangement for such a device | |
JP2009253176A (ja) | 光電変換モジュール及び光サブアセンブリ | |
JP4798863B2 (ja) | 光電気配線基板 | |
CN215581186U (zh) | 一种光接收器 | |
CN219267662U (zh) | 一种小型同轴光电探测器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |