CN115886826A - Anti-interference single-side conduction microneedle electrode and preparation method - Google Patents
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Abstract
The application belongs to the technical field of bioelectricity signal monitoring, and discloses an anti-interference single-side conduction microneedle electrode and a preparation method. The microneedle electrode comprises a substrate, a plurality of microneedles are arranged on the substrate in an array mode, a handle is arranged on one side of the substrate, conductive layers are plated on the surfaces of the microneedles, the substrate and one side, close to the microneedles, of the microneedles and are mutually conducted, the end portion of the handle is connected with a lead wire, and the back of the substrate and the peripheral side wall of the substrate are insulated. Through only plating at the microneedle surface, the basement and the handle near one side of micropin and attaching the conducting layer and switch on each other, do not switch on at the back and the side of basement, under the prerequisite that does not influence the extraction of micropin bioelectricity signal, prevent because the signal interference that produces is contacted with external environment at the basement back, side to promote the precision of the bioelectricity signal of drawinging by a wide margin.
Description
Technical Field
The invention relates to the technical field of bioelectrical signal monitoring, in particular to an anti-interference single-side conduction microneedle electrode and a preparation method thereof.
Background
The bioelectric signal refers to the change of current generated by the sum of potential differences of specific tissues, organs or cell systems, and is an important component of human body biological signals, including: electroencephalogram signals, electrocardiosignals, electromyogram signals, electrooculogram signals and the like. For the monitoring of the bioelectrical signals, the life state of a living body can be better known, and the accurate diagnosis and treatment of part of specific diseases are realized, but most of human body electric signals are weak in strength, easy to interfere and difficult to monitor. Particularly, the electrical signal intensity of the electroencephalogram signal is only 1-20 μ V, and the electroencephalogram signal is very easily interfered by the external environment in the measurement process, so that how to shield the interference of the external environment is realized, the bioelectric signal is better collected and monitored, and the method has important significance for the field of bioelectric signal monitoring.
The micro-needle array electrode is used as a novel electroencephalogram electrode, and can pierce the stratum corneum of human skin painlessly to extract signals. Compared with the traditional mode of extracting electroencephalogram signals through wet electrodes or metal dry electrode plates, the micro-needle array electrodes are adopted for extraction, pretreatment on the skin of the corresponding part of a patient is not needed, and the bioelectricity signal extraction effect is better.
However, in the prior art, the microneedle array electrode is convenient for electrical signals to be led out from the back of the microneedles during preparation, and the front, the back and the side surfaces of the microneedle array electrode are all electrically connected with each other. In practical application, however, the microneedle array electrode with such a structure can be greatly interfered by external environment, for example, in the process of spraying physiological saline to the head of a patient in a hospital, the physiological saline contains conductive Na + Ions and Cl - Ions can generate serious electromagnetic interference on electroencephalogram signal monitoring when contacting with the conductive back side of the microneedle electrode, and electroencephalogram abnormity is caused. In addition, the back and side surfaces of the microneedle electrode support and the microneedle array electrode rub against each other, and external signal interference is generated due to the change of external pressure.
Meanwhile, the existing preparation process of the microneedle array electrode is to prepare a single microneedle array substrate and then plate a conductive film layer on the surface of the microneedle array substrate, so that the microneedle array electrode has conductivity. However, such methods have low production efficiency and cannot realize mass production of the microneedle array electrodes.
Disclosure of Invention
In order to solve the problems, the invention provides an anti-interference single-side conduction microneedle electrode and a preparation method thereof.
The technical purpose of the invention is realized by the following technical scheme:
an anti-interference single-side conduction microneedle electrode comprises a substrate, wherein a plurality of microneedles are arrayed on the front side of the substrate, a handle is arranged at one position of the side wall of the substrate, conductive layers are plated on the surfaces of the microneedles, the front side of the substrate and one side of the handle close to the microneedles and are mutually conducted, and the end part of the handle is connected with a lead wire; the back surface of the substrate and the peripheral side wall of the substrate are insulated.
Through adopting above-mentioned technical scheme, only plate at micropin surface, basement and handle and attach the conducting layer and switch on each other near the one side of micropin, do not switch on at the back and the side of basement, under the prerequisite that does not influence micropin bioelectricity signal and draw, prevent because the signal interference that basement back, side and external environment contacted the production to promote the precision of the bioelectricity signal of drawing by a wide margin.
Further, the handle and the lead wire are fixed through a fixing sleeve ring, and an insulating sleeve is arranged outside the fixing sleeve ring; the substrate is made of an insulating material or a metal material and insulating layers are arranged on the back surface and the peripheral side walls of the substrate.
Through adopting above-mentioned technical scheme, it is fixed through fixed lantern ring between handle and the line of leading to ensure the stability of connecting, set up insulating cover again outside fixed lantern ring, the basement chooses insulating material basement for use or chooses for use the metal material basement and set up the insulating layer at the basement back and lateral wall all around and be favorable to shielding environmental noise.
By adopting the technical scheme, the micro-needle is made of one of stainless steel, copper, gold, tungsten, platinum, silver, iron or silicon.
By adopting the technical scheme, the handle and the substrate are made of materials: flexible polymeric materials such as polyimide, polyvinyl chloride, and the like. The flexible polymer material substrate enables the micro-needle to be attached to a human body test area more easily, and the micro-needle is non-conductive, so that external signal interference is reduced, and a better test effect is obtained.
Further, the conductive layer is a conductive film made of a metal material or a conductive alloy material.
By adopting the technical scheme, the conducting layer is made of the metal material or the conducting alloy material, so that the conducting performance is good.
An anti-interference single-side conduction microneedle electrode preparation method comprises the following steps:
s1: taking a substrate, and dividing the substrate into substrate clusters which are arranged at intervals according to the shape and size of a substrate and a handle;
s2: preparing a microneedle array within a substrate region;
s3: plating conductive layers on the surfaces of the substrate, the handle and the microneedle array;
s4: cutting the substrate according to the shape of the substrate and the handle by a laser cutting machine to obtain a substrate with a handle and a microneedle array;
s5: connecting the lead wire with the handle and fixing the envelope; and (5) insulating the surface part and the peripheral side wall of the substrate.
Through adopting above-mentioned technical scheme, with the cluster division of basement on a monoblock base plate to wholly carry out the processing of micropin, conducting layer on the base plate, can once process and obtain polylith micropin electrode finished product, through whole face processing, integration cutting, improved production efficiency greatly, practiced thrift manufacturing cost.
Further, the step S2 includes:
s2.1: designing an integrated microneedle array cluster mask, and reserving a mask area of a handle on one side of a microneedle array;
s2.2: taking a microneedle plate with the thickness of 0.1-10mm for plasma cleaning to remove surface impurities and an oxide film;
s2.3: putting the cleaned microneedle plate on a spin coater, uniformly coating photoresist on the microneedle plate in a dripping mode, wherein the rotating speed of a spin coater is 2000-3000rpm, and the coating thickness of the photoresist is 4.5-10 mu m;
s2.4: taking the chromium plate as a mask plate, and carrying out exposure and development to obtain a patterned mask layer;
s2.5: etching by using a Boreis etching process, and introducing C4F8 gas with the concentration of 50-90mL/min for etching for 3-5s; introducing SF6 gas with the concentration of 100-150mL/min for passivation for 1-5s; C4F8 gas with the concentration of 10-80mL/min is introduced for etching for 5-10s; then using silicon or titanium oxide with the thickness of 50-400nm as a micro-needle cone body etching mask layer, and introducing C4F8 gas with the concentration of 50-90mL/min for etching for 4-6s; introducing SF6 gas with the concentration of 100-150mL/min for passivation for 2-10s; C4F8 gas with the concentration of 10-80mL/min is introduced for etching for 4-8s;
s2.6: and removing the mask layer after the etching is finished, and cleaning the substrate by using an organic cleaning agent.
By adopting the technical scheme, the microneedle array is etched on the substrate in a whole surface manner by adopting a wet etching method, so that the processing of a plurality of products can be completed at one time, and the overall efficiency is high.
Further, the step S3 includes:
s3.1: heating the microneedle array to 40-70 ℃, introducing Ar gas to adjust the air pressure to 0.5-5Pa, and cleaning for about 10-15min by using radio frequency plasma with the power of 300-400W;
s3.2: controlling the air pressure of a reaction chamber to be 0.2-0.5Pa, the speed of a carrying disc to be 3-5r/min, the bias voltage to be-60 to-30V, the sputtering power to be 250-450W, the sputtering target material to be metal or conductive alloy, carrying out magnetron sputtering for 3 times, circulating for 15-18min, and cooling for 5-10min for each two times of plating; and finally, introducing Ar gas, cooling for 10-15min, and then moving out of the coating chamber to obtain the microneedle array electrode substrate with the handle and the plated conducting layer.
By adopting the technical scheme, the conducting layer is plated and attached on the surfaces of the substrate, the handle and the microneedle array in a magnetron sputtering mode, and all parts are uniform in thickness and firm in bonding.
Further, the step S5 includes:
s5.1: connecting the lead wire with the handle;
s5.2: fixing the lead wire with a handle fixing sleeve ring, wherein the fixing sleeve ring is made of stainless steel;
s5.3: an insulating sleeve is arranged on the outer side of the fixed lantern ring, and the insulating sleeve is made of rubber or flexible plastic; and (3) uniformly coating an insulating layer on the back surface and the peripheral side wall of the substrate by using insulating paint or insulating silica gel.
Through adopting above-mentioned technical scheme, will lead that line and handle are fixed together and with external insulation, avoid external environment's interference through fixed lantern ring and insulating cover.
The invention has the following beneficial effects:
1. in the application, the conductive layers are plated on the surfaces of the micro-needles, the substrate and one surface of the handle close to the micro-needles and are mutually conducted, and the back surface and the side surface of the substrate are not conducted, so that the signal interference generated by the contact of the back surface and the side surface of the substrate with the external environment is prevented on the premise of not influencing the extraction of the micro-needle bioelectricity signals, and the precision of the extracted bioelectricity signals is greatly improved;
2. in this application, through with the basement cluster division on a monoblock base plate to wholly carry out the processing of micropin, conducting layer on the base plate, can once process and obtain polylith micropin electrode finished product, through whole face processing, whole face sputtering, integration cutting, improved production efficiency greatly, practiced thrift manufacturing cost.
Drawings
FIG. 1 is a schematic structural diagram of an embodiment of the present invention;
fig. 2 is a schematic structural view of a microneedle array cluster according to an embodiment of the present invention;
fig. 3 is a schematic structural view of a microneedle electrode cluster according to an embodiment of the present invention;
fig. 4 is a cross-sectional view of a microneedle electrode according to an embodiment of the present invention;
fig. 5 is a schematic illustration of a package for a microneedle electrode according to an embodiment of the present invention.
In the figure: 1. a substrate; 10. a substrate; 20. microneedles; 30. a handle; 40. a conductive layer; 50. conducting wires; 60. a fixed collar; 70. and an insulating sleeve.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application; it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all embodiments, and all other embodiments obtained by those of ordinary skill in the art without any inventive work based on the embodiments in the present application belong to the protection scope of the present application.
Example 1
As shown in fig. 1 to 5, an embodiment of the present application discloses an anti-interference single-side-conduction microneedle electrode, which includes a substrate 10, a microneedle 20, a handle 30, a conductive layer 40, and a lead wire 50. Specifically, the substrate 10 may be made of stainless steel, copper, gold, tungsten, platinum, silver, iron, silicon, or a flexible material; microneedles 20 and handle 30 may be made of silicon, metal, alloy, or flexible polymer material; the conductive layer 40 may be a conductive film made of a metal material or a conductive alloy material.
The micro-needles 20 are arrayed on the substrate 10, the micro-needles 20 are integrally conical, the large-caliber end of each micro-needle 20 is connected with the substrate 10, and the micro-needles 20 can be integrally etched on the substrate 1 by a wet etching method to form a whole with the substrate 1 and are firmly connected. Specifically, the length-diameter ratio of the micro-needle 20 is 1.0-2.5, the height of the needle body is 100 μm-800 μm, the bottom diameter of the needle body is 40 μm-400 μm, and the distance between the central axes of the needle bodies of the adjacent micro-needles 20 is 100 μm-1500 μm.
A handle 30 is arranged on one side of the base 10, and the handle 30 can be fixedly connected with the base plate 1 through welding or the like, or can be integrally cut and formed with the base plate 1. Specifically, the handle 30 has a length of 0.4-5cm and a cross-sectional area of 0.1-200mm 2 And functions to derive a bioelectrical signal extracted by the needle body of the microneedle 20.
The tail end of the handle 30 is connected with the lead wire 50, the lead wire 50 is fixed with the handle 30 through the fixing sleeve ring 60, the fixing sleeve ring 60 can be made of stainless steel, the stainless steel is low in production cost and has good hardness, and the contact stability of the handle 30 and the lead wire 50 can be effectively guaranteed by packaging through a special machine, so that the microneedle 20 array with the inner side relatively fragile is protected. The insulating sleeve 70 is arranged outside the fixed lantern ring 60, the insulating sleeve 70 can be made of rubber or flexible plastic, the rubber or flexible plastic is low in production cost and has good insulativity and toughness, external electromagnetic interference can be effectively shielded, and a buffering effect is achieved when the lead wire 50 is in contact with a human body.
The conductive layer 40 is plated on the surface of the microneedle 20, the substrate 10 and one side of the handle 30 adjacent to the microneedle 20, and the thickness of the conductive layer 40 is 0.05-50um. The conductive layer 40 can be sputtered on the surface of the microneedle 20, the substrate 10 and the handle 30 by a magnetron sputtering method, one surfaces of the microneedle 20, the substrate 10 and the handle 30, which are close to the microneedle 20, are mutually conducted through the conductive layer 40, and the back surface and the side surface of the substrate 10 are not conducted, so that the signal interference caused by the contact of the back surface and the side surface of the substrate 10 with the external environment can be prevented on the premise of not influencing the extraction of the bioelectricity signals of the microneedle 20, and the accuracy of the extracted bioelectricity signals is greatly improved.
The following describes a specific preparation method of an anti-interference single-side-conduction microneedle electrode according to this embodiment, in which a microneedle 20 is made of monocrystalline silicon, a conductive layer 40 is made of platinum, and the specific preparation method includes the following steps:
s1: taking a substrate 1, and dividing the substrate 1 into substrate clusters arranged at intervals according to the shapes and sizes of a substrate 10 and a handle 30;
s2.1: designing an integrated microneedle array cluster mask, and reserving a mask area of a handle 30 at one side of a microneedle array;
s2.2: taking a silicon wafer with the thickness of 0.1-10mm, placing the silicon wafer in a plasma cleaning machine for plasma cleaning, and removing surface impurities and an oxidation film;
s2.3: putting the cleaned silicon wafer on a spin coater, uniformly coating photoresist on the silicon wafer in a dripping mode, wherein the rotating speed of a spin coater is 2000rpm, and the coating thickness of the photoresist is 4.5 mu m;
s2.4: taking the chromium plate as a mask plate, and carrying out exposure and development to obtain a patterned mask layer;
s2.5: etching by using a Boreis etching process, and introducing C4F8 gas with the concentration of 50mL/min for etching for 3s; and (3) introducing SF6 gas with the concentration of 100mL/min for passivating for 1s, wherein the etching ratio of silicon to silicon oxide is more than 300:1, etching depth and width more than 100:1; C4F8 gas with the concentration of 10mL/min is introduced for etching for 5s; then, silicon or titanium oxide with the thickness of 50nm is used as an etching mask layer of the 20-cone microneedle body of the microneedle, and C4F8 gas with the concentration of 50mL/min is introduced for etching for 4s; and (3) introducing SF6 gas with the concentration of 100mL/min for passivating for 2s, wherein the etching ratio of silicon to silicon oxide is more than 150:1, etching depth and width is more than 50:1; C4F8 gas with the concentration of 10mL/min is introduced for etching for 4s;
s2.6: removing the mask layer after etching is finished, and cleaning the substrate 1 by using an organic cleaning agent to obtain a microneedle 20 array;
in the etching process, the etching time must be strictly controlled to ensure that the etching height is less than the height of the silicon wafer and that the microneedles 20 in the array are not separated in the etching process.
S3.1: heating the microneedle 20 array to 40 ℃, introducing Ar gas to adjust the air pressure to 0.5Pa, and cleaning for about 15min by using radio frequency plasma with the power of 300W;
s3.2: controlling the air pressure of the reaction chamber to be 0.2Pa, the speed of the carrying disc to be 3r/min, the working bias voltage to be-30V, the sputtering target material to be Pt, the sputtering power to be 250W, carrying out magnetron sputtering, circulating for 2 times, wherein the sputtering time is 15min each time, and cooling for 5min every two times; finally, ar gas is introduced to cool for 10min and then the substrate 10, the handle 30 and the microneedle 20 array surface are removed from the coating chamber, and the conductive layer 40 with the thickness of the coating layer of 3.5 mu m can be coated;
s4: cutting the substrate 1 according to the shapes of the substrate 10 and the handle 30 by adopting a laser cutting machine with the power of 4000-6000W and the laser beam moving speed of 10-100cm/min to obtain the substrate 10 with the handle 30 and the microneedle 20 array;
s5.1: connecting the lead wire 50 with the handle 30;
s5.2: the lead wire 50 and the handle 30 are fixed by a stainless steel fixing lantern ring 60;
s5.3: and installing a rubber insulating sleeve 70 outside the fixed lantern ring 60 to obtain the finished product of the anti-interference single-side conduction microneedle 20 electrode.
The anti-interference single-side conduction microneedle electrode manufactured by the process is characterized in that only the surface of the microneedle 20, the substrate 10 and one side of the handle 30 close to the microneedle 20 are mutually conducted, and the back and the side of the substrate 10 are not conducted, so that when the microneedle 20 electrode pierces the stratum corneum of the human body to extract signals, when physiological saline and the like are sprayed to contact with the back and the side of the microneedle 20 electrode, the back and the side of the microneedle 20 electrode are not conductive, the signal monitoring of the microneedle 20 electrode cannot be influenced, and the anti-interference single-side conduction microneedle electrode cannot be influenced by factors such as external environment change, external contact pressure change, electrolyte solution and the like.
Moreover, the preparation method of the embodiment improves the existing production process, adopts the production procedures of whole-surface processing, whole-surface sputtering and integrated cutting of the substrate 1, can produce a plurality of microneedle electrode finished products at one time, greatly improves the production efficiency, and can carry out batch production.
Example 2
A specific preparation method of an anti-interference single-side conduction microneedle electrode comprises the following specific steps of:
s1: taking a substrate 1, and dividing the substrate 1 into substrate clusters arranged at intervals according to the shapes and sizes of a substrate 10 and a handle 30;
s2.1: designing an integrated microneedle array cluster mask, and reserving a mask area of a handle 30 at one side of a microneedle array;
s2.2: taking a silicon wafer with the thickness of 0.1-10mm, placing the silicon wafer in a plasma cleaning machine for plasma cleaning, and removing surface impurities and an oxidation film;
s2.3: putting the cleaned silicon wafer on a spin coater, uniformly coating photoresist on the silicon wafer in a dripping mode, wherein the rotating speed of a spin coater is 3000rpm, and the coating thickness of the photoresist is 10 microns;
s2.4: carrying out exposure and development by taking the chromium plate as a mask plate to obtain a patterned mask layer;
s2.5: etching by using a Boreis etching process, and introducing C4F8 gas with the concentration of 90mL/min for etching for 5s; and (3) introducing SF6 gas with the concentration of 150mL/min for passivating for 5s, wherein the etching ratio of silicon to silicon oxide is more than 300:1, etching depth and width is more than 100:1; C4F8 gas with the concentration of 80mL/min is introduced for etching for 10s; then, using 400nm silicon or titanium oxide as a micro-needle 20 cone body etching mask layer, and introducing C4F8 gas with the concentration of 90mL/min for etching for 6s; and (3) introducing SF6 gas with the concentration of 150mL/min for passivation for 10s, wherein the etching ratio of silicon to silicon oxide is more than 150:1, etching depth and width is more than 50:1; C4F8 gas with the concentration of 80mL/min is introduced for etching for 8s;
s2.6: removing the mask layer after etching is finished, and cleaning the substrate 1 by using an organic cleaning agent to obtain a microneedle 20 array;
in the etching process, the etching time must be strictly controlled to ensure that the etching height is less than the height of the silicon wafer and that the microneedles 20 in the array are not separated in the etching process.
S3.1: heating the microneedle 20 array to 70 ℃, introducing Ar gas to adjust the air pressure to 5Pa, and cleaning for about 10min by using radio frequency plasma with the power of 400W;
s3.2: controlling the air pressure of the reaction chamber to be 0.5Pa, the speed of the carrying disc to be 5r/min, the bias voltage to be-60V, the sputtering target material to be Pt, the sputtering power to be 450W, carrying out magnetron sputtering, circulating for 4 times, wherein the sputtering time length is 18min each time, and cooling for 10min every two times of plating; finally, ar gas is introduced to cool for 15min and then the substrate 10, the handle 30 and the microneedle 20 array surface are removed from the film coating chamber, and the conductive layer 40 with the film thickness of 4.4 mu m can be coated on the substrate, the handle and the microneedle array surface;
s4: cutting the substrate 1 according to the shapes of the substrate 10 and the handle 30 by adopting a laser cutting machine with the power of 4000-6000W and the laser beam moving speed of 10-100cm/min to obtain the substrate 10 with the handle 30 and the microneedle 20 array;
s5.1: connecting the lead wire 50 with the handle 30;
s5.2: the lead wire 50 and the handle 30 are fixed by a stainless steel fixing lantern ring 60;
s5.3: and installing a rubber insulating sleeve 70 outside the fixed lantern ring 60 to obtain the finished product of the anti-interference single-side conduction microneedle 20 electrode.
The above description is only a preferred embodiment of the present invention, and the scope of the present invention is not limited to the above embodiments, and all technical solutions that belong to the idea of the present invention belong to the scope of the present invention. It should be noted that modifications and adaptations to those skilled in the art without departing from the principles of the present invention should also be considered as within the scope of the present invention.
Claims (9)
1. The utility model provides an anti-interference single face switches on micropin electrode, includes the base, its characterized in that: the micro-needle array comprises a substrate, a plurality of micro-needles are arrayed on the front surface of the substrate, a handle is arranged at one position of the side wall of the substrate, conductive layers are plated on the surfaces of the micro-needles, the front surface of the substrate and one surface of the handle close to the micro-needles and are mutually communicated, and the end part of the handle is connected with a lead wire; the back surface of the substrate and the peripheral side wall of the substrate are insulated.
2. The anti-interference single-side conduction microneedle electrode according to claim 1, wherein: the handle and the lead wire are fixed through a fixing sleeve ring, and an insulating sleeve is arranged outside the fixing sleeve ring; the substrate is made of an insulating material or a metal material and insulating layers are arranged on the back surface and the peripheral side walls of the substrate.
3. The anti-interference single-side conduction microneedle electrode according to claim 1, wherein the microneedle material is one of stainless steel, copper, gold, tungsten, platinum, silver, iron and silicon.
4. The anti-interference single-side conduction microneedle electrode according to claim 1, wherein the handle and the substrate are made of flexible polymer materials.
5. The anti-interference single-side conduction microneedle electrode according to claim 1, wherein: the conductive layer is a conductive film made of a metal material or a conductive alloy material.
6. The preparation method of the anti-interference single-side conduction microneedle electrode is characterized by comprising the following steps of:
s1: taking a substrate, and dividing the substrate into substrate clusters which are arranged at intervals according to the shape and size of a substrate and a handle;
s2: preparing a microneedle array within a substrate region;
s3: plating a conducting layer on the surfaces of the substrate, the handle and the microneedle array;
s4: cutting the substrate according to the shape of the substrate and the handle by a laser cutting machine to obtain a substrate with a handle and a microneedle array;
s5: connecting the lead wire with the handle and fixing the envelope; and (5) insulating the surface part and the peripheral side wall of the substrate.
7. The method for preparing an anti-interference single-side conduction microneedle electrode according to claim 6, wherein the step S2 comprises:
s2.1: designing an integrated microneedle array cluster mask, and reserving a mask area of a handle at one side of a microneedle array;
s2.2: taking a microneedle plate with the thickness of 0.1-10mm for plasma cleaning to remove surface impurities and an oxide film;
s2.3: putting the cleaned microneedle plate on a spin coater, uniformly coating photoresist on the microneedle plate in a dripping mode, wherein the rotating speed of a spin coater is 2000-3000rpm, and the coating thickness of the photoresist is 4.5-10 mu m;
s2.4: carrying out exposure and development by taking the chromium plate as a mask plate to obtain a patterned mask layer;
s2.5: etching with Boreis etching process, and introducing C with concentration of 50-90mL/min 4 F 8 Gas etching for 3-5s; introducing SF with the concentration of 100-150mL/min 6 Passivating for 1-5s by using gas; introducing C with the concentration of 10-80mL/min 4 F 8 Etching with gas for 5-10s; then using 50-400nm silicon or titanium oxide as the micro needle cone body etching mask layer, and introducing C with the concentration of 50-90mL/min 4 F 8 Gas etching for 4-6s; introducing SF with the concentration of 100-150mL/min 6 Passivating for 2-10s with gas; introducing C with the concentration of 10-80mL/min 4 F 8 Gas etching for 4-8s;
s2.6: and removing the mask layer after the etching is finished, and cleaning the substrate by using an organic cleaning agent.
8. The method for preparing the anti-interference single-side conduction micro-needle electrode according to claim 6, wherein the method comprises the following steps: the step S3 includes:
s3.1: heating the microneedle array to 40-70 ℃, introducing Ar gas to adjust the air pressure to 0.5-5Pa, and cleaning for about 10-15min by using radio frequency plasma with the power of 300-400W;
s3.2: controlling the air pressure of a reaction chamber to be 0.2-0.5Pa, the speed of a carrying disc to be 3-5r/min, the bias voltage to be-60 to-30V, the sputtering power to be 250-450W, the sputtering target material to be metal or conductive alloy, carrying out magnetron sputtering for 2-4 times in a circulating manner, wherein the sputtering time for each time is 15-18min, and the temperature is reduced for 5-10min for each plating time; and finally, introducing Ar gas, cooling for 10-15min, and then moving out of the film coating chamber to obtain the microneedle array electrode substrate with the handle and the plated conductive layer.
9. The method for preparing the anti-interference single-side conduction micro-needle electrode according to claim 6, wherein the method comprises the following steps: the step S5 includes:
s5.1: connecting the lead wire with the handle;
s5.2: fixing the lead wire with a handle fixing sleeve ring, wherein the fixing sleeve ring is made of stainless steel;
s5.3: an insulating sleeve is arranged on the outer side of the fixed lantern ring, and the insulating sleeve is made of rubber or flexible plastic; and (3) uniformly coating an insulating layer on the back surface and the peripheral side wall of the substrate by using insulating paint or insulating silica gel.
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