CN111863777A - Low-noise single-side integrated injectable biological photoelectric electrode microprobe and preparation method thereof - Google Patents
Low-noise single-side integrated injectable biological photoelectric electrode microprobe and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000000523 sample Substances 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 40
- 238000002955 isolation Methods 0.000 claims description 32
- 229910002601 GaN Inorganic materials 0.000 claims description 29
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 29
- 239000000377 silicon dioxide Substances 0.000 claims description 27
- 230000008569 process Effects 0.000 claims description 26
- 235000012239 silicon dioxide Nutrition 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 15
- 238000002161 passivation Methods 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 12
- 238000000059 patterning Methods 0.000 claims description 12
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 12
- 238000001259 photo etching Methods 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 238000000206 photolithography Methods 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910015844 BCl3 Inorganic materials 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 238000004151 rapid thermal annealing Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 230000005670 electromagnetic radiation Effects 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 210000005036 nerve Anatomy 0.000 description 1
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- 239000013307 optical fiber Substances 0.000 description 1
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- 238000002834 transmittance Methods 0.000 description 1
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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Abstract
The invention discloses a low-noise single-side integrated micro probe capable of being injected with a biological photoelectric electrode and a preparation method thereof. By using the invention, the interference of electromagnetic radiation to the photoelectrode can be inhibited, thereby obtaining a biological signal with higher quality. The invention is a low-noise single-side integrated injectable biological photoelectrode microprobe and a preparation method thereof, and can be widely applied to the field of semiconductor chips in life science.
Description
Technical Field
The invention relates to the field of semiconductor chips in life science, in particular to a low-noise single-side integrated implantable biological photoelectrode microprobe and a preparation method thereof.
Background
The optogenetic tool needs to have two functions of specific targeting light regulation and recording of nerve signals, and is defined as a photoelectrode. The photoelectrode can be divided into a coupling light source type photoelectrode and an injection light source type photoelectrode, the coupling light source type photoelectrode is bound by optical fibers, a laser source and external coupling equipment, the development of wireless and intelligent photoelectrodes is limited, so the injection light source type photoelectrode can be the inevitable development trend of optogenetics tools, and when a light source driving module of the injection light source type photoelectrode works, the injection current can bring electromagnetic radiation interference and power frequency noise to the record of biological signals. The suppression and elimination of electromagnetic radiation interference are one of the difficulties which must be solved by photoelectrode, and have a crucial influence on the improvement of the quality of the collected biological signal.
Disclosure of Invention
In order to solve the above technical problems, an object of the present invention is to provide a low-noise single-side integrated injectable biological photoelectrode microprobe and a method for manufacturing the same, which can further optimize the recording quality of biological signals on the basis of having the advantages of high resolution, high optical power density, small size and low power consumption of an injected light source type photoelectrode.
The first technical scheme adopted by the invention is as follows: a low-noise single-side integrated micro probe capable of being injected into a biological photoelectric electrode comprises a light-emitting diode structure, a recording electrode and an electromagnetic shielding structure, wherein the light-emitting diode structure comprises a substrate material, n-type gallium nitride, an active layer, p-type gallium nitride, a transparent conducting layer, an insulating isolation layer and an insulating passivation layer from bottom to top, the insulating isolation layer is provided with a light-emitting diode anode structure and a light-emitting diode cathode structure, and the electromagnetic shielding structure is composed of an electromagnetic shielding layer structure and a ground wire semi-surrounding structure.
Further, the light emitting diode anode structure comprises a light emitting diode anode electrode, a light emitting diode anode lead and a light emitting diode anode bonding pad, the light emitting diode cathode structure comprises a light emitting diode cathode, a light emitting diode cathode lead and a light emitting diode cathode bonding pad, and the recording electrode structure comprises a recording electrode, a recording electrode lead and a recording electrode bonding pad.
Furthermore, an anode window and a cathode window are arranged on the insulating isolation layer.
Further, the anode window is provided with an anode electrode of the light emitting diode, the insulating isolation layer is provided with an anode lead of the light emitting diode and an anode pad of the light emitting diode, and the anode electrode of the light emitting diode is connected with the anode pad of the light emitting diode through the anode lead of the light emitting diode.
Further, a light emitting diode cathode electrode is arranged on the cathode window, a light emitting diode cathode lead and a light emitting diode cathode bonding pad are arranged on the insulating isolation layer, and the light emitting diode cathode electrode is connected with the light emitting diode cathode bonding pad through the light emitting diode cathode lead.
Further, the insulating isolation layer is provided with a recording electrode, a recording electrode lead and a recording electrode pad, and the recording electrode is connected with the recording electrode pad through the recording electrode lead.
Further, the insulating passivation layer is provided with an anode pad window, a cathode pad window, a recording electrode window and a recording electrode pad window.
The second technical scheme adopted by the invention is as follows: a preparation method of a low-noise single-sided integrated injectable biological photoelectrode microprobe comprises the following steps:
sequentially growing n-type gallium nitride, an active layer and p-type gallium nitride on a sapphire substrate;
preparing an indium tin oxide transparent conducting layer in a high vacuum argon environment by photoetching and magnetron sputtering processes;
patterning the indium tin oxide transparent conductive layer by a stripping process to prepare a transparent anode and an electromagnetic shielding layer of the light-emitting diode;
forming good ohmic contact between the indium tin oxide transparent conductive layer and the p-type gallium nitride through a rapid thermal annealing process;
by photoetching and dry etching process, Cl is generated in gas environment2And BCl3Etching the epitaxial wafer to n-type gallium nitride;
activating the active layer at a high temperature;
by photolithography and Plasma Enhanced Chemical Vapor Deposition (PECVD), SiH is obtained in gas atmosphere4And N2Preparing a silicon dioxide isolation layer in high vacuum and 350 ℃ high-temperature environment, and patterning the silicon dioxide isolation layer by using a buffer oxide etching solution for a wet etching process to prepare a cathode window and an anode window;
preparing a metal film in a high vacuum environment through photoetching and electron beam evaporation processes, and patterning the metal film by utilizing a stripping process to prepare and obtain a light-emitting diode anode electrode, a light-emitting diode anode lead, a light-emitting diode anode bonding pad, a light-emitting diode cathode electrode, a light-emitting diode cathode lead, a light-emitting diode cathode bonding pad, a recording electrode lead and a recording electrode bonding pad;
by photolithography and Plasma Enhanced Chemical Vapor Deposition (PECVD), SiH is obtained in gas atmosphere4And N2Preparing a silicon dioxide passivation layer in an O, high vacuum and 350 ℃ high temperature environment, patterning the silicon dioxide isolation layer by using a buffer oxide etching liquid for a wet etching process, and preparing to obtain an anode pad window, a cathode pad window, a recording electrode window and a recording electrode pad window
Further, the metal film is a 50nm titanium metal film or a 150nm gold metal film.
The invention has the beneficial effects that: on one hand, a layer of transparent conductive film is prepared on the n-type gallium nitride and is used as an electromagnetic shielding structure of the whole photoelectrode to prevent the photoelectrode from being influenced by external electromagnetic interference; on the other hand, the ground wire of the light-emitting diode is used as the cathode of the light-emitting diode through the arrangement design of the conducting wires, and also used as a shielding structure for protecting the conducting wires of the recording electrode from being influenced by electromagnetic interference, and a transparent conductive film electromagnetic shielding layer can be led to the insulating isolation layer by using a through hole structure to be used as a ground wire semi-surrounding structure, so that the recording electrode is protected from being influenced by electromagnetic interference. The structure can shield the interference of the injection current of the light-emitting diode and an external electric signal to the recording electrode when the light-emitting diode works, reduce the noise of the recording electrode when the recording electrode works and improve the quality of collected biological signals.
Drawings
FIG. 1 is a diagram of the structure of a low-noise single-side integrated implantable biological photoelectrode microprobe;
FIG. 2 is a perspective view of a low noise single-sided integrated implantable bio-photoelectrode microprojection device structure after etching a mesa and fabricating a transparent electrode in accordance with the present invention;
FIG. 3 is a perspective view of a low noise single-sided integrated implantable biophotonic electrode microprojection device structure after fabrication of an insulating spacer layer in accordance with the present invention;
FIG. 4 is a perspective view of a low noise single-sided integrated implantable bio-photoelectrode microprojection device structure after fabrication of an insulating passivation layer.
FIG. 5 is a flow chart of the steps of a method for preparing a low-noise single-side integrated injectable biological photoelectrode microprobe of the present invention.
Reference numerals: 1. a sapphire substrate; 2. n-type gallium nitride; 3. an active layer; 4. p-type gallium nitride; 5. an indium tin oxide transparent conductive layer; 6. a silicon dioxide isolation layer; 7. an anode window; 8. a cathode window; 9. a light emitting diode anode electrode; 10. a recording electrode; 11. a light emitting diode cathode electrode; 12. a recording electrode lead; 13. a light emitting diode anode lead; 14. a light emitting diode cathode lead; 15. a recording electrode pad; 16. a light emitting diode cathode pad; 17. an LED anode pad; 18. a silicon dioxide passivation layer; 19. a recording electrode window; 20. recording an electrode pad window; 21. an anode pad window; 22. a cathode pad window.
Detailed Description
The invention is described in further detail below with reference to the figures and the specific embodiments. The step numbers in the following embodiments are provided only for convenience of illustration, the order between the steps is not limited at all, and the execution order of each step in the embodiments can be adapted according to the understanding of those skilled in the art.
As shown in fig. 1, the invention provides a low-noise single-sided integrated injectable biological photoelectrode microprobe, which comprises a light emitting diode structure, a recording electrode structure and an electromagnetic shielding structure, wherein the light emitting diode structure comprises a sapphire substrate 1, n-type gallium nitride 2, an active layer 3, p-type gallium nitride 4, an indium tin oxide transparent conducting layer 5, a silicon dioxide isolation layer 6 and a silicon dioxide passivation layer 18 from bottom to top, the silicon dioxide isolation layer 6 is provided with a light emitting diode anode structure and a light emitting diode cathode structure, and the electromagnetic shielding structure comprises an electromagnetic shielding layer structure and a ground wire semi-surrounding structure.
As shown in fig. 2, the epitaxial structure of the gan epitaxial wafer is: sapphire substrate 1, n-type gallium nitride 2, active layer 3, p-type gallium nitride 4. Etching the mesa to the n-type gallium nitride 2, and preparing an indium tin oxide transparent conducting layer 5 on the p-type gallium nitride 4 and the n-type gallium nitride 2. The transparent conductive layer 5 prepared on the p-type gallium nitride 4 is used as an anode of the light emitting diode structure, and although the transparent electrode can increase the light transmittance while increasing the current injection area, it is inconvenient to draw out long leads and pads, so that a partial area is left for preparing the anode of the metal structure; and preparing an indium tin oxide transparent conducting layer 5 on the n-type gallium nitride 2 to serve as an electromagnetic shielding structure of the whole photoelectrode.
Specifically, the electromagnetic shielding structure is composed of an electromagnetic shielding layer structure and a ground wire semi-surrounding structure, on one hand, a layer of indium tin oxide transparent conductive film is prepared on the n-type gallium nitride 2 and is used as the electromagnetic shielding structure of the whole photoelectrode, and the photoelectrode is prevented from being influenced by external electromagnetic interference; on the other hand, through the arrangement design of the conducting wires, the ground wire of the light-emitting diode is used as the cathode of the light-emitting diode and also used as a shielding structure for protecting the conducting wire of the recording electrode from being influenced by electromagnetic interference, or a through hole structure is used for leading the indium tin oxide transparent conductive film electromagnetic shielding layer to the silicon dioxide isolation layer 6 to be used as a ground wire semi-surrounding structure, so that the recording electrode is protected from being influenced by electromagnetic shielding. The structure can shield the interference of the injection current of the light-emitting diode and an external electric signal to the recording electrode when the light-emitting diode works, reduce the noise of the recording electrode when the recording electrode works and improve the quality of collected biological signals.
Further as a preferred embodiment of the method, the led anode structure comprises an led anode electrode 9, an led anode lead 13, and an led anode pad 17, the led cathode structure comprises an led cathode 11, an led cathode lead 14, and an led cathode pad 16, and the recording electrode structure comprises a recording electrode 10, a recording electrode lead 12, and a recording electrode pad 15.
As shown in fig. 4, on the basis of fig. 3, the anode, cathode and recording electrode structures of the light emitting diode structure were prepared using titanium/gold (50/150 nm). Specifically, the anode of the light emitting diode includes: the LED comprises an LED anode electrode 9, an LED anode lead 13 and an LED anode bonding pad 17; the cathode of the light emitting diode includes: a light emitting diode cathode electrode 11, a light emitting diode cathode lead 14, a light emitting diode cathode bonding pad 16; the recording electrode structure includes: recording electrode 10, recording electrode lead 12, recording electrode pad 15. The cathode lead part of the light-emitting diode surrounds the recording electrode lead, so that electromagnetic interference caused by injection current of the anode of the light-emitting diode can be effectively inhibited.
Further as a preferred embodiment of the method, the silicon dioxide isolation layer 6 is provided with an anode window 7 and a cathode window 8.
As shown in fig. 3: the silicon dioxide isolation layer 6 is prepared on the basis of fig. 2, so as to prevent the problem of electric leakage caused by a long lead prepared subsequently, and the preparation of the long lead is convenient for the subsequent packaging work of the device. And etching the silicon dioxide isolation layer 6, preparing an anode window 7 structure for the anode metal of the light-emitting diode structure, and preparing a cathode window structure 8 for the cathode metal of the light-emitting diode structure.
Further as a preferred embodiment of the method, the anode window 7 is provided with an led anode electrode 9, the silica isolation layer 6 is provided with an led anode wire 13 and an led anode pad 17, and the led anode electrode 9 is connected to the led anode pad 17 through the led anode wire 13.
Further as a preferred embodiment of the method, a cathode electrode 11 of the light emitting diode is arranged on the cathode window, a cathode lead 14 of the light emitting diode and a cathode bonding pad 16 of the light emitting diode are arranged on the silica isolation layer 6, and the cathode electrode 11 of the light emitting diode is connected with the cathode bonding pad 16 of the light emitting diode through the cathode lead 14 of the light emitting diode.
Further as a preferred embodiment of the method, the silicon dioxide isolation layer is provided with a recording electrode 10, a recording electrode lead 12 and a recording electrode pad 15, and the recording electrode 10 is connected with the recording electrode pad 15 through the recording electrode lead 12.
Further as a preferred embodiment of the method, the silicon dioxide passivation layer 18 is provided with an anode pad window 21, a cathode pad window 22, a recording electrode window 19 and a recording electrode pad window 20.
As shown in fig. 1, a silicon dioxide passivation layer 18 is prepared on the basis of fig. 4 in order to protect the anode electrode 9, the cathode electrode 11, the anode lead 13, the cathode lead 14 of the light emitting diode structure, and the recording electrode 10 of the recording electrode structure, and prevent the structures from generating current leakage when the photoelectrode is in the electrolyte solution, which affects the normal operation of the photoelectrode. The silicon dioxide passivation layer 18 is etched to prepare an anode pad window 21 and a cathode pad window 22 for an anode pad and a cathode pad of the light emitting diode structure, and a recording electrode window 19 and a recording electrode pad window 20 for a recording electrode structure. The preparation of the window structures enables the photoelectrode to work normally in an electrolyte environment, and facilitates subsequent testing and packaging work in a laboratory.
As shown in fig. 2, a method for preparing a low-noise single-side integrated injectable biological photoelectrode microprobe comprises the following steps:
s1, sequentially growing n-type gallium nitride, an active layer and p-type gallium nitride on the sapphire substrate;
s2, preparing an indium tin oxide transparent conducting layer in a high vacuum argon environment through photoetching and magnetron sputtering processes;
s3, patterning the indium tin oxide transparent conductive layer through a stripping process to prepare a transparent anode and an electromagnetic shielding layer of the light-emitting diode;
s4, forming good ohmic contact between the indium tin oxide transparent conducting layer film and the p-type gallium nitride through a rapid thermal annealing process;
s5, performing photoetching and dry etching processes in a gas environment of Cl2And BCl3Etching the epitaxial wafer to n-type gallium nitride;
s6, activating the active layer at high temperature;
s7, performing photoetching and Plasma Enhanced Chemical Vapor Deposition (PECVD) process, and taking SiH as gas environment4And N2Preparing a silicon dioxide isolation layer in high vacuum and 350 ℃ high-temperature environment, and patterning the silicon dioxide isolation layer by using a buffer oxide etching solution for a wet etching process to prepare a cathode window and an anode window;
s8, preparing a metal film in a high vacuum environment through photoetching and electron beam evaporation processes, and patterning the metal film by utilizing a stripping process to prepare and obtain a light-emitting diode anode electrode, a light-emitting diode anode lead, a light-emitting diode anode bonding pad, a light-emitting diode cathode electrode, a light-emitting diode cathode lead, a light-emitting diode cathode bonding pad, a recording electrode lead and a recording electrode bonding pad;
s9, performing photoetching and Plasma Enhanced Chemical Vapor Deposition (PECVD) process, and taking SiH as gas environment4And N2And preparing a silicon dioxide passivation layer in an environment with high vacuum and high temperature of 350 ℃, patterning the silicon dioxide isolation layer by using a buffer oxide etching liquid for a wet etching process, and preparing and obtaining an anode pad window, a cathode pad window, a recording electrode window and a recording electrode pad window.
Further as a preferred embodiment of the method, the metal film is a 50nm titanium metal film or a 150nm gold metal film.
The contents in the above method embodiments are all applicable to the present system embodiment, the functions specifically implemented by the present system embodiment are the same as those in the above method embodiment, and the beneficial effects achieved by the present system embodiment are also the same as those achieved by the above method embodiment.
While the preferred embodiments of the present invention have been illustrated and described, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (9)
1. The low-noise single-sided integrated micro probe capable of being injected with the biological photoelectrode is characterized by comprising a light emitting diode structure, a recording electrode and an electromagnetic shielding structure, wherein the light emitting diode structure comprises a substrate material, n-type gallium nitride, an active layer, p-type gallium nitride, a transparent conducting layer, an insulating isolation layer and an insulating passivation layer from bottom to top, the insulating isolation layer is provided with a light emitting diode anode structure and a light emitting diode cathode structure, and the electromagnetic shielding structure is composed of an electromagnetic shielding layer structure and a ground wire semi-surrounding structure.
2. The low-noise single-sided integrated implantable bio-photoelectrode microprobe according to claim 1, wherein the led anode structure comprises an led anode electrode, an led anode lead and an led anode pad, the led cathode structure comprises an led cathode, an led cathode lead and an led cathode pad, and the recording electrode structure comprises a recording electrode, a recording electrode lead and a recording electrode pad.
3. The low-noise single-sided integrated implantable biophotonic electrode microprobe according to claim 2, wherein the insulating isolation layer is provided with an anode window and a cathode window.
4. The low-noise single-sided integrated implantable bio-photoelectrode microprobe according to claim 3, wherein an anode electrode of the light emitting diode is disposed on the anode window, an anode lead of the light emitting diode and an anode pad of the light emitting diode are disposed on the insulating isolation layer, and the anode electrode of the light emitting diode is connected to the anode pad of the light emitting diode through the anode lead of the light emitting diode.
5. The low-noise single-sided integrated implantable bio-photoelectrode micro-probe according to claim 4, wherein a light emitting diode cathode electrode is disposed on said cathode window, a light emitting diode cathode lead and a light emitting diode cathode pad are disposed on said insulating isolation layer, and said light emitting diode cathode electrode is connected to said light emitting diode cathode pad through said light emitting diode cathode lead.
6. The low-noise single-sided integrated implantable bio-photoelectrode microprobe according to claim 5, wherein a recording electrode, a recording electrode lead and a recording electrode pad are disposed on the insulating isolation layer, and the recording electrode is connected to the recording electrode pad through the recording electrode lead.
7. The low-noise single-sided integrated implantable bio-photoelectrode microprobe according to claim 6, wherein the insulating passivation layer is provided with an anode pad window, a cathode pad window, a recording electrode window and a recording electrode pad window.
8. A preparation method of a low-noise single-sided integrated injectable biological photoelectrode microprobe is characterized by comprising the following steps:
sequentially growing n-type gallium nitride, an active layer and p-type gallium nitride on a sapphire substrate;
preparing an indium tin oxide transparent conducting layer in a high vacuum argon environment by photoetching and magnetron sputtering processes;
patterning the indium tin oxide transparent conductive layer by a stripping process to prepare a transparent anode and an electromagnetic shielding layer of the light-emitting diode;
forming good ohmic contact between the indium tin oxide transparent conductive layer and the p-type gallium nitride through a rapid thermal annealing process;
by photoetching and dry etching process, Cl is generated in gas environment2And BCl3Etching the epitaxial wafer to n-type gallium nitride;
activating the active layer at a high temperature;
by photolithography and Plasma Enhanced Chemical Vapor Deposition (PECVD), SiH is obtained in gas atmosphere4And N2Preparing a silicon dioxide isolation layer in high vacuum and 350 ℃ high-temperature environment, and patterning the silicon dioxide isolation layer by using a buffer oxide etching solution for a wet etching process to prepare a cathode window and an anode window;
preparing a metal film in a high vacuum environment through photoetching and electron beam evaporation processes, and patterning the metal film by utilizing a stripping process to prepare and obtain a recording electrode, a recording electrode lead, a recording electrode pad, a light-emitting diode anode electrode, a light-emitting diode anode lead, a light-emitting diode anode pad, a light-emitting diode cathode electrode, a light-emitting diode cathode lead and a light-emitting diode cathode pad;
by photolithography and Plasma Enhanced Chemical Vapor Deposition (PECVD), SiH is obtained in gas atmosphere4And N2And preparing a silicon dioxide passivation layer in an environment with high vacuum and high temperature of 350 ℃, patterning the silicon dioxide isolation layer by using a buffer oxide etching liquid for a wet etching process, and preparing and obtaining an anode pad window, a cathode pad window, a recording electrode window and a recording electrode pad window.
9. The method for preparing a low-noise single-sided integrated implantable biological photoelectrode microprobe according to claim 8, wherein the metal film is a 50nm titanium metal film or a 150nm gold metal film.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115886826A (en) * | 2022-11-16 | 2023-04-04 | 苏州博志金钻科技有限责任公司 | Anti-interference single-side conduction microneedle electrode and preparation method |
| CN117476830A (en) * | 2023-12-27 | 2024-01-30 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Photoelectrode microprobe and preparation method thereof |
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| CN117476830A (en) * | 2023-12-27 | 2024-01-30 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Photoelectrode microprobe and preparation method thereof |
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