CN111863777B - Low-noise single-sided integrated injectable biological photoelectric electrode microprobe and preparation method thereof - Google Patents
Low-noise single-sided integrated injectable biological photoelectric electrode microprobe and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a low-noise single-side integrated micro probe capable of being injected with a biological photoelectric electrode and a preparation method thereof. By using the invention, the interference of electromagnetic radiation to the photoelectrode can be inhibited, thereby obtaining a biological signal with higher quality. The invention is a low-noise single-side integrated injectable biological photoelectrode microprobe and a preparation method thereof, and can be widely applied to the field of semiconductor chips in life science.
Description
Technical Field
The invention relates to the field of semiconductor chips in life science, in particular to a low-noise single-side integrated injectable biological photoelectric electrode microprobe and a preparation method thereof.
Background
The optogenetic tool needs to have two functions of specific targeting light regulation and recording of nerve signals, and is defined as a photoelectrode. The photoelectrode can be divided into a coupling light source type photoelectrode and an injection light source type photoelectrode, the coupling light source type photoelectrode is bound by optical fibers, a laser source and external coupling equipment, development of wireless and intelligent photoelectrodes is limited, so the injection light source type photoelectrode becomes inevitable development trend of optogenetics tools, and when a light source driving module of the injection light source type photoelectrode works, injection current can bring electromagnetic radiation interference and power frequency noise to record of biological signals. The inhibition and elimination of electromagnetic radiation interference is one of the difficulties that the photoelectrode must solve, and has a vital influence on improving the quality of the acquired biological signals.
Disclosure of Invention
In order to solve the above technical problems, an object of the present invention is to provide a low-noise single-sided integrated micro probe capable of implanting a bio-optical electrode and a method for preparing the same, which can further optimize the recording quality of bio-signals on the basis of having the advantages of high resolution, high optical power density, small size and low power consumption of the light source type optical electrode for implantation.
The first technical scheme adopted by the invention is as follows: a low-noise single-side integrated micro probe capable of being injected into a biological photoelectric electrode comprises a light-emitting diode structure, a recording electrode and an electromagnetic shielding structure, wherein the light-emitting diode structure comprises a substrate material, n-type gallium nitride, an active layer, p-type gallium nitride, a transparent conducting layer, an insulating isolation layer and an insulating passivation layer from bottom to top, the insulating isolation layer is provided with a light-emitting diode anode structure and a light-emitting diode cathode structure, and the electromagnetic shielding structure is composed of an electromagnetic shielding layer structure and a ground wire semi-surrounding structure.
Further, the light emitting diode anode structure comprises a light emitting diode anode electrode, a light emitting diode anode lead and a light emitting diode anode bonding pad, the light emitting diode cathode structure comprises a light emitting diode cathode, a light emitting diode cathode lead and a light emitting diode cathode bonding pad, and the recording electrode structure comprises a recording electrode, a recording electrode lead and a recording electrode bonding pad.
Further, an anode window and a cathode window are arranged on the insulating isolation layer.
Further, the anode window is provided with an anode electrode of the light emitting diode, the insulating isolation layer is provided with an anode lead of the light emitting diode and an anode pad of the light emitting diode, and the anode electrode of the light emitting diode is connected with the anode pad of the light emitting diode through the anode lead of the light emitting diode.
Further, a light emitting diode cathode electrode is arranged on the cathode window, a light emitting diode cathode lead and a light emitting diode cathode bonding pad are arranged on the insulating isolation layer, and the light emitting diode cathode electrode is connected with the light emitting diode cathode bonding pad through the light emitting diode cathode lead.
Further, the insulating isolation layer is provided with a recording electrode, a recording electrode lead and a recording electrode pad, and the recording electrode is connected with the recording electrode pad through the recording electrode lead.
Further, the insulating passivation layer is provided with an anode pad window, a cathode pad window, a recording electrode window and a recording electrode pad window.
The second technical scheme adopted by the invention is as follows: a preparation method of a low-noise single-sided integrated injectable biological photoelectrode microprobe comprises the following steps:
sequentially growing n-type gallium nitride, an active layer and p-type gallium nitride on a sapphire substrate;
preparing an indium tin oxide transparent conducting layer in a high vacuum argon environment by photoetching and magnetron sputtering processes;
patterning the indium tin oxide transparent conductive layer by a stripping process to prepare a transparent anode and an electromagnetic shielding layer of the light-emitting diode;
forming good ohmic contact between the indium tin oxide transparent conductive layer and the p-type gallium nitride through a rapid thermal annealing process;
by photoetching and dry etching process, Cl is generated in gas environment2And BCl3Etching the epitaxial wafer to n-type gallium nitride;
activating the active layer at a high temperature;
by photolithography and Plasma Enhanced Chemical Vapor Deposition (PECVD), SiH is obtained in gas atmosphere4And N2Preparing a silicon dioxide isolation layer in high vacuum and 350 ℃ high-temperature environment, and patterning the silicon dioxide isolation layer by using a buffer oxide etching solution for a wet etching process to prepare a cathode window and an anode window;
Preparing a metal film in a high vacuum environment through photoetching and electron beam evaporation processes, and patterning the metal film by utilizing a stripping process to prepare and obtain a light-emitting diode anode electrode, a light-emitting diode anode lead, a light-emitting diode anode bonding pad, a light-emitting diode cathode electrode, a light-emitting diode cathode lead, a light-emitting diode cathode bonding pad, a recording electrode lead and a recording electrode bonding pad;
by photolithography and Plasma Enhanced Chemical Vapor Deposition (PECVD), the gas atmosphere is SiH4And N2Preparing a silicon dioxide passivation layer in an O, high vacuum and 350 ℃ high-temperature environment, patterning a silicon dioxide isolation layer by using a buffering oxide etching solution for a wet etching process to prepare an anode pad window, a cathode pad window, a recording electrode window and a recording electrode pad window
Further, the metal film is a 50nm titanium metal film or a 150nm gold metal film.
The invention has the beneficial effects that: on one hand, a layer of transparent conductive film is prepared on the n-type gallium nitride and is used as an electromagnetic shielding structure of the whole photoelectrode to prevent the photoelectrode from being influenced by external electromagnetic interference; on the other hand, the ground wire of the light-emitting diode is used as the cathode of the light-emitting diode through the arrangement design of the conducting wires, and also used as a shielding structure for protecting the conducting wires of the recording electrode from being influenced by electromagnetic interference, and a transparent conductive film electromagnetic shielding layer can be led to the insulating isolation layer by using a through hole structure to be used as a ground wire semi-surrounding structure, so that the recording electrode is protected from being influenced by electromagnetic interference. The structure can shield the interference of the injection current of the light-emitting diode and an external electric signal to the recording electrode when the light-emitting diode works, reduce the noise of the working recording electrode and improve the quality of collected biological signals.
Drawings
FIG. 1 is a diagram of the structure of a low-noise single-side integrated implantable biological photoelectrode microprobe;
FIG. 2 is a perspective view of a low noise single-sided integrated implantable bio-photoelectrode microprojection device structure after etching a mesa and fabricating a transparent electrode in accordance with the present invention;
FIG. 3 is a perspective view of a low noise single-sided integrated implantable biophotonic electrode microprojection device structure after fabrication of an insulating spacer layer in accordance with the present invention;
FIG. 4 is a perspective view of a low noise single-sided integrated implantable bio-photoelectrode microprojection device structure after fabrication of an insulating passivation layer.
FIG. 5 is a flow chart of the steps of a method for preparing a low-noise single-side integrated injectable biological photoelectrode microprobe of the present invention.
Reference numerals: 1. a sapphire substrate; 2. n-type gallium nitride; 3. an active layer; 4. p-type gallium nitride; 5. an indium tin oxide transparent conductive layer; 6. a silicon dioxide isolation layer; 7. an anode window; 8. a cathode window; 9. a light emitting diode anode electrode; 10. a recording electrode; 11. a light emitting diode cathode electrode; 12. a recording electrode lead; 13. a light emitting diode anode lead; 14. a light emitting diode cathode lead; 15. a recording electrode pad; 16. a light emitting diode cathode pad; 17. an LED anode pad; 18. a silicon dioxide passivation layer; 19. a recording electrode window; 20. recording an electrode pad window; 21. an anode pad window; 22. a cathode pad window.
Detailed Description
The invention is described in further detail below with reference to the figures and the specific embodiments. The step numbers in the following embodiments are provided only for convenience of illustration, the order between the steps is not limited at all, and the execution order of each step in the embodiments can be adapted according to the understanding of those skilled in the art.
As shown in fig. 1, the invention provides a low-noise single-sided integrated injectable biological photoelectrode microprobe, which comprises a light emitting diode structure, a recording electrode structure and an electromagnetic shielding structure, wherein the light emitting diode structure comprises a sapphire substrate 1, n-type gallium nitride 2, an active layer 3, p-type gallium nitride 4, an indium tin oxide transparent conducting layer 5, a silicon dioxide isolation layer 6 and a silicon dioxide passivation layer 18 from bottom to top, the silicon dioxide isolation layer 6 is provided with a light emitting diode anode structure and a light emitting diode cathode structure, and the electromagnetic shielding structure comprises an electromagnetic shielding layer structure and a ground wire semi-surrounding structure.
As shown in fig. 2, the epitaxial structure of the gan epitaxial wafer is: sapphire substrate 1, n-type gallium nitride 2, active layer 3, p-type gallium nitride 4. Etching the mesa to the n-type gallium nitride 2, and preparing an indium tin oxide transparent conducting layer 5 on the p-type gallium nitride 4 and the n-type gallium nitride 2. The transparent conductive layer 5 prepared on the p-type gallium nitride 4 is used as an anode of the light emitting diode structure, and although the transparent electrode can increase the light transmittance while increasing the current injection area, it is inconvenient to draw out long leads and pads, so that a partial area is left for preparing the anode of the metal structure; and preparing an indium tin oxide transparent conducting layer 5 on the n-type gallium nitride 2 to serve as an electromagnetic shielding structure of the whole photoelectrode.
Specifically, the electromagnetic shielding structure is composed of an electromagnetic shielding layer structure and a ground wire semi-surrounding structure, on one hand, a layer of indium tin oxide transparent conductive film is prepared on the n-type gallium nitride 2 and is used as the electromagnetic shielding structure of the whole photoelectrode, and the photoelectrode is prevented from being influenced by external electromagnetic interference; on the other hand, through the arrangement design of the conducting wires, the ground wire of the light-emitting diode is used as the cathode of the light-emitting diode and also used as a shielding structure for protecting the conducting wire of the recording electrode from being influenced by electromagnetic interference, or a through hole structure is used for leading the indium tin oxide transparent conductive film electromagnetic shielding layer to the silicon dioxide isolation layer 6 to be used as a ground wire semi-surrounding structure, so that the recording electrode is protected from being influenced by electromagnetic shielding. The structure can shield the interference of the injection current of the light-emitting diode and an external electric signal to the recording electrode when the light-emitting diode works, reduce the noise of the recording electrode when the recording electrode works and improve the quality of collected biological signals.
Further as a preferred embodiment of the method, the led anode structure comprises an led anode electrode 9, an led anode lead 13, and an led anode pad 17, the led cathode structure comprises an led cathode 11, an led cathode lead 14, and an led cathode pad 16, and the recording electrode structure comprises a recording electrode 10, a recording electrode lead 12, and a recording electrode pad 15.
As shown in fig. 4, on the basis of fig. 3, the anode, cathode and recording electrode structures of the light emitting diode structure were prepared using titanium/gold (50/150 nm). Specifically, the anode of the light emitting diode includes: the light-emitting diode comprises a light-emitting diode anode electrode 9, a light-emitting diode anode lead 13 and a light-emitting diode anode bonding pad 17; the cathode of the light emitting diode includes: a light emitting diode cathode electrode 11, a light emitting diode cathode lead 14, a light emitting diode cathode bonding pad 16; the recording electrode structure includes: recording electrode 10, recording electrode lead 12, recording electrode pad 15. The cathode lead part of the light-emitting diode surrounds the recording electrode lead, so that electromagnetic interference caused by injection current of the anode of the light-emitting diode can be effectively inhibited.
Further as a preferred embodiment of the method, the silicon dioxide isolation layer 6 is provided with an anode window 7 and a cathode window 8.
As shown in fig. 3: the silicon dioxide isolation layer 6 is prepared on the basis of fig. 2, so as to prevent the problem of electric leakage caused by a long lead prepared subsequently, and the preparation of the long lead is convenient for the subsequent packaging work of the device. And etching the silicon dioxide isolation layer 6, preparing an anode window 7 structure for the anode metal of the light-emitting diode structure, and preparing a cathode window structure 8 for the cathode metal of the light-emitting diode structure.
As a further preferred embodiment of the method, the anode window 7 is provided with an led anode electrode 9, the silica isolation layer 6 is provided with an led anode lead 13 and an led anode pad 17, and the led anode electrode 9 is connected to the led anode pad 17 through the led anode lead 13.
Further as a preferred embodiment of the method, a cathode electrode 11 of the light emitting diode is arranged on the cathode window, a cathode lead 14 of the light emitting diode and a cathode bonding pad 16 of the light emitting diode are arranged on the silica isolation layer 6, and the cathode electrode 11 of the light emitting diode is connected with the cathode bonding pad 16 of the light emitting diode through the cathode lead 14 of the light emitting diode.
Further as a preferred embodiment of the method, the silicon dioxide isolation layer is provided with a recording electrode 10, a recording electrode lead 12 and a recording electrode pad 15, and the recording electrode 10 is connected with the recording electrode pad 15 through the recording electrode lead 12.
Further as a preferred embodiment of the method said silicon dioxide passivation layer 18 is provided with an anode pad window 21, a cathode pad window 22, a recording electrode window 19 and a recording electrode pad window 20.
As shown in fig. 1, a silicon dioxide passivation layer 18 is prepared on the basis of fig. 4 in order to protect the anode electrode 9, the cathode electrode 11, the anode lead 13, the cathode lead 14 of the light emitting diode structure, and the recording electrode 10 of the recording electrode structure, and prevent the structures from generating electric leakage when the photoelectrode is in the electrolyte solution, which affects the normal operation of the photoelectrode. The silicon dioxide passivation layer 18 is etched to prepare an anode pad window 21 and a cathode pad window 22 for an anode pad and a cathode pad of the light emitting diode structure, and a recording electrode window 19 and a recording electrode pad window 20 for a recording electrode structure. The preparation of the window structures enables the photoelectrode to work normally in an electrolyte environment, and facilitates subsequent testing and packaging work in a laboratory.
As shown in fig. 2, a method for preparing a low-noise single-side integrated injectable biological photoelectrode microprobe comprises the following steps:
s1, sequentially growing n-type gallium nitride, an active layer and p-type gallium nitride on the sapphire substrate;
s2, preparing an indium tin oxide transparent conducting layer in a high vacuum argon environment through photoetching and magnetron sputtering processes;
s3, patterning the indium tin oxide transparent conductive layer through a stripping process to prepare a transparent anode and an electromagnetic shielding layer of the light-emitting diode;
S4, forming good ohmic contact between the indium tin oxide transparent conducting layer film and the p-type gallium nitride through a rapid thermal annealing process;
s5, performing photoetching and dry etching processes in a gas environment of Cl2And BCl3Etching the epitaxial wafer to n-type gallium nitride;
s6, activating the active layer at high temperature;
s7, performing photoetching and Plasma Enhanced Chemical Vapor Deposition (PECVD) process, and taking SiH as gas environment4And N2Preparing a silicon dioxide isolation layer in high vacuum and 350 ℃ high-temperature environment, and patterning the silicon dioxide isolation layer by using a buffer oxide etching solution for a wet etching process to prepare a cathode window and an anode window;
s8, preparing a metal film in a high vacuum environment through photoetching and electron beam evaporation processes, and patterning the metal film by utilizing a stripping process to prepare and obtain a light-emitting diode anode electrode, a light-emitting diode anode lead, a light-emitting diode anode bonding pad, a light-emitting diode cathode electrode, a light-emitting diode cathode lead, a light-emitting diode cathode bonding pad, a recording electrode lead and a recording electrode bonding pad;
s9, performing photoetching and Plasma Enhanced Chemical Vapor Deposition (PECVD) process, and taking SiH as gas environment 4And N2And preparing a silicon dioxide passivation layer in an environment with high vacuum and high temperature of 350 ℃, patterning the silicon dioxide isolation layer by using a buffer oxide etching liquid for a wet etching process, and preparing and obtaining an anode pad window, a cathode pad window, a recording electrode window and a recording electrode pad window.
Further as a preferred embodiment of the method, the metal film is a 50nm titanium metal film or a 150nm gold metal film.
The contents in the above method embodiments are all applicable to the present system embodiment, the functions specifically implemented by the present system embodiment are the same as those in the above method embodiment, and the beneficial effects achieved by the present system embodiment are also the same as those achieved by the above method embodiment.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (3)
1. A low-noise single-sided integrated micro probe capable of being injected into a biological photoelectrode is characterized by comprising a light emitting diode structure, a recording electrode and an electromagnetic shielding structure, wherein the light emitting diode structure comprises a substrate material, n-type gallium nitride, an active layer, p-type gallium nitride, a transparent conducting layer, an insulating isolation layer and an insulating passivation layer from bottom to top, the insulating isolation layer is provided with a light emitting diode anode structure and a light emitting diode cathode structure, the electromagnetic shielding structure is composed of an electromagnetic shielding layer structure and a ground wire semi-surrounding structure, the light emitting diode anode structure comprises a light emitting diode anode electrode, a light emitting diode anode lead and a light emitting diode anode pad, the light emitting diode cathode structure comprises a light emitting diode cathode, a light emitting diode cathode lead and a light emitting diode cathode pad, and the recording electrode structure comprises a recording electrode, a transparent conducting layer, an insulating isolation layer and an insulating passivation layer, The recording electrode comprises a recording electrode lead and a recording electrode pad, wherein an anode window and a cathode window are arranged on the insulating isolation layer, a light-emitting diode anode electrode is arranged on the anode window, a light-emitting diode anode lead and a light-emitting diode anode pad are arranged on the insulating isolation layer, the light-emitting diode anode electrode is connected with the light-emitting diode anode pad through the light-emitting diode anode lead, a light-emitting diode cathode electrode is arranged on the cathode window, a light-emitting diode cathode lead and a light-emitting diode cathode pad are arranged on the insulating isolation layer, the light-emitting diode cathode electrode is connected with the light-emitting diode cathode pad through the light-emitting diode cathode lead, a recording electrode lead and a recording electrode pad are arranged on the insulating isolation layer, the recording electrode is connected with the recording electrode pad through the recording electrode lead, the insulating passivation layer is provided with an anode pad window, a cathode window, a light-emitting diode anode window and a cathode window, a light-emitting diode anode window and a light-emitting diode cathode window, a light-emitting diode cathode window light-emitting diode cathode electrode, a light-emitting diode cathode window light-emitting diode cathode electrode, a light-emitting diode cathode window light-emitting diode cathode electrode, a light-emitting diode cathode window light-emitting diode cathode electrode, a light-emitting diode cathode and a light-emitting diode cathode electrode, a recording window light-cathode window light-emitting diode cathode electrode, a light-emitting diode cathode and a light-emitting diode cathode electrode, a light-emitting diode cathode and a recording layer, a light-emitting diode cathode and a light-emitting diode cathode light-emitting diode light-, The preparation method of the cathode pad window, the recording electrode window and the recording electrode pad window comprises the following steps:
Sequentially growing n-type gallium nitride, an active layer and p-type gallium nitride on a sapphire substrate;
preparing an indium tin oxide transparent conducting layer in a high vacuum argon environment by photoetching and magnetron sputtering processes;
patterning the indium tin oxide transparent conductive layer by a stripping process to prepare a transparent anode and an electromagnetic shielding layer of the light-emitting diode;
forming good ohmic contact between the indium tin oxide transparent conductive layer and the p-type gallium nitride through a rapid thermal annealing process;
by photoetching and dry etching process, Cl is generated in gas environment2And BCl3Etching the epitaxial wafer to n-type gallium nitride;
activating the active layer at a high temperature;
by photolithography and Plasma Enhanced Chemical Vapor Deposition (PECVD), SiH is obtained in gas atmosphere4And N2Preparing a silicon dioxide isolation layer in high vacuum and 350 ℃ high-temperature environment, and patterning the silicon dioxide isolation layer by using a buffer oxide etching solution for a wet etching process to prepare a cathode window and an anode window;
preparing a metal film in a high vacuum environment through photoetching and electron beam evaporation processes, and patterning the metal film by utilizing a stripping process to prepare and obtain a recording electrode, a recording electrode lead, a recording electrode pad, a light-emitting diode anode electrode, a light-emitting diode anode lead, a light-emitting diode anode pad, a light-emitting diode cathode electrode, a light-emitting diode cathode lead and a light-emitting diode cathode pad;
By photolithography and plasma enhanced chemical vapor deposition processes,in a gaseous atmosphere of SiH4And N2And preparing a silicon dioxide passivation layer in an environment with high vacuum and high temperature of 350 ℃, patterning the silicon dioxide passivation layer by using a buffer oxide etching solution in a wet etching process, and preparing and obtaining an anode pad window, a cathode pad window, a recording electrode window and a recording electrode pad window.
2. A preparation method of a low-noise single-sided integrated injectable biological photoelectrode microprobe is characterized by comprising the following steps:
sequentially growing n-type gallium nitride, an active layer and p-type gallium nitride on a sapphire substrate;
preparing an indium tin oxide transparent conducting layer in a high vacuum argon environment by photoetching and magnetron sputtering processes;
patterning the indium tin oxide transparent conductive layer by a stripping process to prepare a transparent anode and an electromagnetic shielding layer of the light-emitting diode;
forming good ohmic contact between the indium tin oxide transparent conductive layer and the p-type gallium nitride through a rapid thermal annealing process;
by photoetching and dry etching process, Cl is generated in gas environment2And BCl3Etching the epitaxial wafer to n-type gallium nitride;
activating the active layer at a high temperature;
by photolithography and Plasma Enhanced Chemical Vapor Deposition (PECVD), SiH is obtained in gas atmosphere 4And N2Preparing a silicon dioxide isolation layer in high vacuum and 350 ℃ high-temperature environment, and patterning the silicon dioxide isolation layer by using a buffer oxide etching solution for a wet etching process to prepare a cathode window and an anode window;
preparing a metal film in a high vacuum environment through photoetching and electron beam evaporation processes, and patterning the metal film by utilizing a stripping process to prepare and obtain a recording electrode, a recording electrode lead, a recording electrode pad, a light-emitting diode anode electrode, a light-emitting diode anode lead, a light-emitting diode anode pad, a light-emitting diode cathode electrode, a light-emitting diode cathode lead and a light-emitting diode cathode pad;
by photolithography and Plasma Enhanced Chemical Vapor Deposition (PECVD), SiH is obtained in gas atmosphere4And N2And preparing a silicon dioxide passivation layer in an environment with high vacuum and high temperature of 350 ℃, patterning the silicon dioxide passivation layer by using a buffer oxide etching solution in a wet etching process, and preparing and obtaining an anode pad window, a cathode pad window, a recording electrode window and a recording electrode pad window.
3. The method for preparing a low-noise single-sided integrated implantable biological photoelectrode microprobe according to claim 2, wherein the metal film is a 50nm titanium metal film or a 150nm gold metal film.
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