CN1156903A - 具有热沉的平板型和柱型半导体封装 - Google Patents

具有热沉的平板型和柱型半导体封装 Download PDF

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CN1156903A
CN1156903A CN96114083A CN96114083A CN1156903A CN 1156903 A CN1156903 A CN 1156903A CN 96114083 A CN96114083 A CN 96114083A CN 96114083 A CN96114083 A CN 96114083A CN 1156903 A CN1156903 A CN 1156903A
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parts
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heat sink
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金善东
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MagnaChip Semiconductor Ltd
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Abstract

改进的平板型和柱型半导体封装有隐埋于平板中的热沉，它能够防止引线或安装片弯曲。平板包括隐埋于其中的多根引线和热沉，便于容易地将半导体封装安装于印刷电路板上。半导体芯片附着在平板的热沉上，多根金属连线电连接平板的多根引线与半导体芯片。

Description

具有热沉的平板型和柱型半导体封装
本发明涉及一种半导体封装，特别涉及一种具有热沉的平板型和柱型半导体封装。
方形扁平封装(QFP)是一种半导体封装，图1示出了这种常规方形扁平封装的结构。该扁平封装包括：半导体芯片3；其上安装半导体芯片3的安装片2；具有位于安装片2的两侧的多根引线1A和1B的引线框架1；及电连接引线框架1的引线1A与半导体芯片3的多根金属连线4。环氧树脂模制化合物5基本密封引线框架1，且具有预定厚度。上述引线1A和1B分为内引线1A和从环氧树脂模制化合物伸出的外引线1B。
常规半导体封装的制造方法包括下列步骤：第一步，形成包括引线和安装片2的引线框架1；第二步，在引线框架1的安装片2上安装芯片3；第三步，用多根金属连线4，电连接引线框架1与半导体芯片3；第四步，用模制树脂化合物密封引线框架1。此后，顺序进行修整步骤和成形步骤。然后把半导体封装安装在印刷电路板上，当给半导体芯片加电压时，便可将信息存储于其中，并从中读出这些信息。
然而，由于安装片2会因模制工艺过程中环氧树脂化合物的压力而有一部分产生倾斜，所以常规半导体封装并不理想。由于引线在模制工艺后伸到外部，引线会因加于其上的外部冲击力而易于弯曲。因此，半导体封装的可靠性下降。
另外，很难在印刷电路板上准确对准和安装有多根伸出的引线的半导体封装。而且，当把电压加到芯片上时，在半导体芯片工作期间，半导体封装的温度上升，由于温度上升而产生的热不能有效地散发到外部，所以会造成芯片不正确的工作和错误。
本发明的优点是提供一种有热沉的平板型和柱型半导体封装，可以防止引线或安装片的弯曲。
本发明的另一个优点是容易在印刷电路板上安装半导体封装。
本发明的再一个优点是防止由于热量增加而造成的不正确工作和有效散发半导体封装中产生的热量。
本发明还有一个优点是通过减少制造工艺步骤来提高生产率。
由本发明的第一实施例可部分实现这些和其它优点，该实施例为一个具有热沉的半导体封装，包括：其中埋有多根引线和热沉的平板；附着在平板的热沉上的半导体芯片；用于将平板的多根引线与半导体芯片电连接的金属连线；及密封平板预定部分的环氧树脂模制化合物。
半导体封装可以有一个热沉，它包括：其中埋有多根引线和一个热沉的柱形平板，其中在从其上表面到下表面方向上，形成有预定深度和预定大小的凹槽；附着在平板的热沉上的半导体芯片；用于将平板的多根引线与半导体芯片电连接的金属连线；及加到平板上表面上的盖。
由形成集成芯片封装的构件可部分实现本发明的上述和其它优点，该构件包括有预定形状和第一及第二表面的部件，其中该部件包括：形成于容纳集成芯片的第一部件中的第一金属部件，第一金属部件占据第一部件的预定区域，且在从部件的第一表面到第二表面的方向上，具有预定深度；及形成于该部件中引线连接集成芯片的多个第二金属部件。
由一种封装也可部分实现本发明的上述和其它优点，该封装包括：A)有第一和第二表面的平板，该平板具有I)形成于第一部件中的第一金属部件，该第一金属部件占据平板的预定区域；II)形成于平板中的多根引线；B)安装在金属部件上的集成芯片；C)将多根引线与集成芯片进行连接的连线；及D)密封平板预定部分的装置。
下面的说明会部分地表现出本发明的其它优点、目的和其它特点，而且本领域的技术人员通过下面的试验或通过实践本发明会更清楚本发明的这些优点、目的和特点。所附权利要求书所特别指出的方案，可以实现本发明的目的和取得本发明的优点。
下面将参照附图详细说明本发明，各附图中相同的标记表示相同的部件：
图1是常规半导体封装的纵向剖面图；
图2是本发明的整体柱状架和封装管座的透视图；
图3是本发明的第一实施例的有热沉的平板型半导体封装之透视图；
图4是本发明的第二实施例的有热沉的平板型半导体封装之透视图；以及
图5是本发明的第三实施例的有热沉的平板型半导体封装之透视图。
改进的平板型和柱型半导体封装有一个热沉，它能够较容易地把半导体封装内产生的热量散发掉。用其中埋有多根引线和热沉的整体柱状架，制造半导体封装，可提高半导体封装的生产率。平板型封装管座是按一定间隔从整体柱状架上切下来的。
图2示出了本发明的整体柱状架和切下的平板。如该图所示，整体柱状架10包括：有预定长度(l)的柱形主体11；隐埋在主体11的中心部分的柱形热沉13；及在热沉13的周边设置的多根引线12。热沉13暴露于主体11的上表面和下表面，引线12的预定部分以预定厚度(d)暴露于主体11的表面。在该图中，点划线表示主体11的切割部位。
柱型主体11一般由绝缘材料制成。把柱形主体11制成方形或其它合适的形状，例如圆形。显然，本发明也可采用其它形状。在预定间隔处切割该整体柱状架10，例如在1mm、1.5mm和2.0mm处。切下的整体柱状架10变成平板，用于制造半导体封装。隐埋在整体柱状架10内的多根引线12也隐埋在切下的整体柱状架10内。引线12的上部和下部及热沉13皆暴露于主体11的表面上。
图3表示本发明的第一实施例的有热沉的平板型半导体封装。如该图所示，把半导体芯片15安装在热沉13上，用金属连线14电接合半导体芯片15与多根引线12。标号16表示模制线。通过环氧树脂模制化合物的密封和固化，密封平板11B的上部(未示出)。
图4表示本发明的第二实施例的有热沉的平板型半导体封装。如该图所示，通过研磨或抛光从整体柱状架10上切下来的平板11B的上部预定部位，形成凹槽11A。此后，进行前述实施例所述的半导体芯片安装工艺和引线接合工艺。用环氧树脂化合物17密封槽11A，于是形成半导体封，因而可以制造比本发明的第一实施例薄的半导体封装。
图5表示本发明的第三实施例的有热沉的平板型半导体封装。用盖11C代替上述实施例中的环树脂化合物。片切整体柱状架10便可得到盖11C。平板11B和盖11C间存在某种程度的厚度差异。
另外，本发明的另一个例中，可以使整体柱状架与基片图形的下表面连接(未示出)，或在再一个实施例中，可以使整体柱状架的下表面直接与印刷电路板的下表面连接。
在把有上述结构的半导体封装安装到印刷电路板上后，当给半导体封装加电压时，半导体封装中的半导体芯片工作，从而从芯片中读出预定信息和将预定信息写入芯片。
本发明的有热沉的平板型和柱型半导体封装可防止引线的弯曲。另外，由于多根引线和平板型或柱型半导体封装的上下表面暴露于外，所以可较容易地在基片上安装芯片。另外，可以实现叠层型结构，所以容易维修保养。
由于热沉暴露于平板或柱形半导体封装的上下表面，所以可更有效地把封装内的热量散发到外部，所以可避免芯片不正确的工作。与常规半导体封装制造工艺相比，可以减少制造工艺，降低制造成本，提高生产率。
尽管为了说明公开了本发明的优选实施例，但本领域的技术人员可以在不脱离本发明所附权利要求书中所述范围和精神实质的情况下，对本发明作出各种改型、附加和替换。
上述实施例仅是例证性的，并不限制本发明。可以容易地将本发明的方案用于其它类型的半导体封装。本领域的普通技术人员可将本发明的教导用于那些要求较容易和较简单地制造半导体封装的其它器件。本发明的说明只是说明性的，并不限制要求书的范围。本领域的技术人员可以对本发明作出许多替换、改型和变化。

Claims (40)

1.一种半导体封装，包括：
其中埋有多根引线和热沉的平板；
附着在平板的热沉上的半导体芯片；
用于将平板的多根引线与半导体芯片电连接的金属连线；及
密封平板预定部分的环氧树脂模制化合物。
2.如权利要求1所述的封装，其特征在于：所述平板由绝缘材料制成。
3.如权利要求1所述的封装，其特征在于：所述平板有圆形表面。
4.如权利要求1所述的封装，其特征在于：所述平板有方形表面。
5.如权利要求1所述的封装，其特征在于：所述多根引线和所述热沉暴露于平板的上下表面。
6.如权利要求5所述的封装，其特征在于：所述引线暴露于平板的侧边。
7.如权利要求1所述的封装，其特征在于：所述平板包括在从其上表面到下表面的方向上有预定深度和大小的凹槽。
8.有热沉的半导体封装，包括：
其中埋有多根引线和一个热沉的柱形平板，其中在从其上表面到下表面的方向上，形成有预定深度和预定大小的凹槽；
附着在热沉上的半导体芯片；
将平板的多根引线与半导体芯片电连接的金属连线；及
加到平板上表面上的盖。
9.如权利要求8所述的封装，其特征在于：所述平板由绝缘材料制成。
10.如权利要求8所述的封装，其特征在于：所述平板有圆形表面。
11.如权利要求8所述的封装，其特征在于：所述平板有方形表面。
12.如权利要求8所述的封装，其特征在于：所述多根引线和所述热沉暴露于平板的上下表面。
13.如权利要求12所述的封装，其特征在于：所述引线暴露于平板的侧边。
14.形成集成芯片封装的构件，包括有预定形状和第一及第二表面的部件，其特征在于：所述部件包括：形成于容纳集成芯片的所述第一部件中的第一金属部件，所述第一金属部件占据第一部件的预定区域，且在从部件的第一表面到第二表面的方向上，具有预定深度；以及形成于所述部件中引线连接集成芯片的多个第二金属部件。
15.如权利要求14所述的封装，其特征在于：所述部件是一方形平板，且所述第一和第二表面是所述方形平板的上下表面。
16.如权利要求14所述的封装，其特征在于：所述部件是一圆形平板，且所述第一和第二表面是所述圆形平板的上下表面。
17.如权利要求14所述的封装，其特征在于：所述部件由绝缘材料构成，所述第一金属部件释放集成芯片产生的热量。
18.如权利要求14所述的封装，其特征在于：所述预定区域是所述部件的中部方形区域。
19.如权利要求14所述的封装，其特征在于：用所述第一和第二表面之一作封装的暴露表面。
20.如权利要求14所述的封装，其特征在于：所述第二金属部件有从所述部件的所述第一表面延伸到所述部件的所述第二表面的深度。
21.如权利要求20所述的封装，其特征在于：所述第一和第二表面分别为上下表面。
22.如权利要求21所述的封装，其特征在于：所述多个第二金属部件形成于所述部件的周边附近。
23.如权利要求22所述的封装，其特征在于：所述第二金属部件为槽形，以便在所述部件的侧边上暴露所述第二部件。
24.如权利要求14所述的封装，其特征在于：所述第一和第二金属部件隐埋于所述柱状部件中。
25.一种封装，包括：
A)有第一和第二表面的平板，所述平板具有I)形成于所述第一部件中的第一金属部件，所述第一金属部件占据所述平板的预定区域；II)形成于所述平板中的多根引线；
B)安装在所述金属部件上的集成芯片；
C)多根连接所述多根引线与所述集成芯片的连线；及
D)密封所述平板预定部分的装置。
26.如权利要求25所述的封装，其特征在于：密封装置密封所述集成芯片、所述多根连线及所述多根引线的每一根的一部分，从而使所述第一和第二表面之一为封装的暴露表面。
27.如权利要求25所述的封装，其特征在于：所述金属部件在从所述平板的所述第一表面到所述第二表面的方向有预定深度。
28.如权利要求27所述的封装，其特征在于：所述金属部件从所述第一表面延伸至所述第二表面，以便使所述金属部件暴露于所述平板的所述第一和第二表面上。
29.如权利要求25所述的封装，其特征在于：所述平板为方形，所述第一和第二表面为所述方形平板的上下表面。
30.如权利要求25所述的封装，其特征在于：所述平板为圆形，所述第一和第二表面为所述圆形平板的上下表面。
31.如权利要求25所述的封装，其特征在于：所述平板由绝缘材料构成，所述金属部件释放由集成芯片产生的热量。
32.如权利要求25所述的封装，其特征在于：所述预定区域是所述平板的中部方形区。
33.如权利要求25所述的封装，其特征在于：所述多根引线有从所述平板的所述第一表面延伸到所述第二表面的深度。
34.如权利要求33所述的封装，其特征在于：所述第一和第二表面分别是上下表面。
35.如权利要求34所述的封装，其特征在于：所述多根引线形成于所述平板的周边附近。
36.如权利要求35所述的封装，其特征在于：所述多引线为槽形，以便在所述平板的侧边上暴露所述引线。
37.如权利要求25所述的封装，其特征在于：所述金属部件和所述多根引线皆以柱状隐埋于所述平板中。
38.如权利要求25所述的封装，其特征在于：所述密封装置为环氧树脂模制化合物。
39.如权利要求25所述的封装，其特征在于：所述第一表面包括容纳所述密封装置的凹槽形表面。
40.如权利要求25所述的封装，其特征在于：所述所述密封装置为有基本与所述平板相似特征的板状盖。
CN96114083A 1995-12-29 1996-12-26 具有热沉的平板型半导体封装 Expired - Lifetime CN1065659C (zh)

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US7291908B2 (en) 2003-10-07 2007-11-06 United Microelectronics Corp. Quad flat no-lead package structure and manufacturing method thereof
CN100369241C (zh) * 2003-10-13 2008-02-13 联华电子股份有限公司 四方扁平无接脚型态的晶片封装结构及其工艺
CN102437824A (zh) * 2011-12-05 2012-05-02 北京大学 一种直冷式高集成度电荷灵敏前置放大器
CN105914191B (zh) * 2016-06-20 2018-03-16 深圳市宏钢机械设备有限公司 一种水冷散热的集成电路封装

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JP2612455B2 (ja) * 1987-09-30 1997-05-21 イビデン株式会社 半導体素子搭載用基板
IT1252136B (it) * 1991-11-29 1995-06-05 St Microelectronics Srl Struttura di dispositivo a semiconduttore con dissipatore metallico e corpo in plastica, con mezzi per una connessione elettrica al dissipatore di alta affidabilita'

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7291908B2 (en) 2003-10-07 2007-11-06 United Microelectronics Corp. Quad flat no-lead package structure and manufacturing method thereof
CN100369241C (zh) * 2003-10-13 2008-02-13 联华电子股份有限公司 四方扁平无接脚型态的晶片封装结构及其工艺
CN102437824A (zh) * 2011-12-05 2012-05-02 北京大学 一种直冷式高集成度电荷灵敏前置放大器
CN105914191B (zh) * 2016-06-20 2018-03-16 深圳市宏钢机械设备有限公司 一种水冷散热的集成电路封装

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JPH09186273A (ja) 1997-07-15

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