CN115685664A - 一种硬掩模及其制备方法 - Google Patents

一种硬掩模及其制备方法 Download PDF

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Publication number
CN115685664A
CN115685664A CN202110869289.0A CN202110869289A CN115685664A CN 115685664 A CN115685664 A CN 115685664A CN 202110869289 A CN202110869289 A CN 202110869289A CN 115685664 A CN115685664 A CN 115685664A
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CN
China
Prior art keywords
pattern
layer
substrate
line hole
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110869289.0A
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English (en)
Chinese (zh)
Inventor
杨晖
周凯
马亮亮
尤兵
陆瑞
王念慈
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Origin Quantum Computing Technology Co Ltd
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Origin Quantum Computing Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Origin Quantum Computing Technology Co Ltd filed Critical Origin Quantum Computing Technology Co Ltd
Priority to CN202110869289.0A priority Critical patent/CN115685664A/zh
Priority to PCT/CN2022/107418 priority patent/WO2023005845A1/fr
Publication of CN115685664A publication Critical patent/CN115685664A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN202110869289.0A 2021-07-30 2021-07-30 一种硬掩模及其制备方法 Pending CN115685664A (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202110869289.0A CN115685664A (zh) 2021-07-30 2021-07-30 一种硬掩模及其制备方法
PCT/CN2022/107418 WO2023005845A1 (fr) 2021-07-30 2022-07-22 Masque dur et son procédé de préparation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110869289.0A CN115685664A (zh) 2021-07-30 2021-07-30 一种硬掩模及其制备方法

Publications (1)

Publication Number Publication Date
CN115685664A true CN115685664A (zh) 2023-02-03

Family

ID=85058983

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110869289.0A Pending CN115685664A (zh) 2021-07-30 2021-07-30 一种硬掩模及其制备方法

Country Status (2)

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CN (1) CN115685664A (fr)
WO (1) WO2023005845A1 (fr)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030050952A (ko) * 2001-12-20 2003-06-25 주식회사 하이닉스반도체 반도체 제조용 노광 마스크의 제조방법
JP2004273689A (ja) * 2003-03-07 2004-09-30 Sony Corp 露光マスク及びその製造方法、並びに半導体装置の製造方法
JP2005108938A (ja) * 2003-09-29 2005-04-21 Sony Corp ステンシルマスクおよびその製造方法、露光装置および露光方法、並びに電子装置の製造方法
JP5332776B2 (ja) * 2009-03-18 2013-11-06 凸版印刷株式会社 転写マスクの製造方法
CN105159027B (zh) * 2015-07-31 2019-09-10 瑞声声学科技(深圳)有限公司 适用于mems麦克风的光掩膜结构及其制作方法
CN215416266U (zh) * 2021-07-30 2022-01-04 合肥本源量子计算科技有限责任公司 一种硬掩模

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Publication number Publication date
WO2023005845A1 (fr) 2023-02-02

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Address after: 230088 6th floor, E2 building, phase II, innovation industrial park, 2800 innovation Avenue, Hefei high tech Zone, Hefei City, Anhui Province

Applicant after: Benyuan Quantum Computing Technology (Hefei) Co.,Ltd.

Address before: 230088 6th floor, E2 building, phase II, innovation industrial park, 2800 innovation Avenue, Hefei high tech Zone, Hefei City, Anhui Province

Applicant before: ORIGIN QUANTUM COMPUTING COMPANY, LIMITED, HEFEI