CN115662946B - 一种超细节距全铜互连方法及超细节距全铜互连结构 - Google Patents
一种超细节距全铜互连方法及超细节距全铜互连结构 Download PDFInfo
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Abstract
本发明提供了一种超细节距全铜互连方法及超细节距全铜互连结构,包括以下步骤:S1、制备纳米铜膏,通过加入溶剂、分散剂和粘度调节剂调配至一定浓度;S2、选取一定铜柱直径及数量的芯片和基板,并将基板及芯片清洗干净后进行预处理;S3、键合机吸取带有铜柱I/O输出端口的芯片并进行翻转,使铜柱结构朝外;S4、键合机的吸头吸取芯片将铜柱结构浸入纳米铜膏中蘸取后提起;S5、通入保护气体,铜柱与基板上对应的垫片通过键合机的光学系统对准并施加压力,超声和温度以进行键合;S6、室温下冷却得到超细节距全铜半导体互连结构。本发明具有低温烧结,能实现超细节距互连上的极限,可以实现更细节距的互连,可满足高密度封装的要求。
Description
技术领域
本发明涉及超细节距全铜互连技术领域,尤其涉及一种超细节距全铜互连方法及超细节距全铜互连结构。
背景技术
目前,在2.5D和3D集成领域中,各种电子元件在单个封装中的结合变得越来越重要。每种电子元件尺寸功能性增加的同时伴随着结构尺寸的进一步减小,与之匹配倒装互连的凸点将由40 50μm缩小到5μm。因为锡具有回流特性,所以传统无铅焊料凸点在回流的过程中会出现坍塌,这使得制作超细节距凸点时无法保证凸点的高度。
现今常用的铜柱凸点是由铜柱和顶部锡帽构成,还是会在回流中发生坍塌,由于锡的比例较小,所以在一定的节距内坍塌对凸点高度影响不大。但是随着接合间距越来越小,必须将材料从锡帽改为纯铜或者银。现有通过超声辅助微米银浆烧结实现微铜柱互连的方法,实现超细节距互连。
然而,但因为传统的涂敷焊料法在实现超细节距互连上有极限,且不可以在低温下实现全铜互连,互连效果差,不能满足高密度封装的要求。
发明内容
针对以上相关技术的不足,本发明提出一种具有低温烧结,能实现超细节距互连上的极限,可以实现更细节距的互连,可满足高密度封装的要求的超细节距全铜互连方法及超细节距全铜互连结构,用于解决上述的技术问题。
第一方面,本发明实施例提出一种超细节距全铜互连方法,包括以下步骤:
S1、制备纳米铜膏,通过加入溶剂、分散剂和粘度调节剂调配至一定浓度;
S2、选取一定铜柱直径及数量的芯片和基板,并将所述基板及所述芯片清洗干净后进行预处理;
S3、将所述基板加载到键合机中,所述键合机吸取带有铜柱I/O输出端口的所述芯片并进行翻转,使铜柱结构朝外;
S4、所述键合机的吸头吸取所述芯片将所述铜柱结构浸入所述纳米铜膏中蘸取后提起;
S5、通入保护气体,所述铜柱与所述基板上对应的垫片通过所述键合机的光学系统对准并施加压力,超声和温度以进行键合;
S6、室温下冷却得到超细节距全铜半导体互连结构。
优选的,所述步骤S1具体包括以下子步骤:
将纳米铜颗粒、溶剂、分散剂和粘度调节剂调配成纳米铜膏,其中所述纳米铜颗粒浓度≥80%,粒径≤100nm。
优选的,在所述步骤S1中,所述溶剂为乙二醇、松油醇、聚乙二醇、松香、丙酮、三氯甲烷、环己烷、环氧氯丙烷、环氧树脂、伯胺、叔胺中的一种或多种;
所述分散剂为阿拉伯胶、聚乙烯醇、聚乙二醇、明胶、聚乙烯烷酮咪唑、1-甲基咪唑、2-甲基咪唑、4-甲基咪唑、苯基咪唑和2-乙基咪唑中的一种或多种;
所述粘度调节剂为甲基纤维素、乙基纤维素、羟基纤维素、伯胺、叔胺和酸酐中的一种或多种。
优选的,所述步骤S2具体包括以下子步骤:
S21、选取铜柱直径为5μm-50μm,芯片间距为10μm-100μm,铜柱数量为4-500的芯片以及基板;
S22、将所述基板和所述芯片进行清洗和预处理。
优选的,所述预处理包括使用酸处理、等离子体处理和SAM中的一种或几种。
优选的,在所述步骤S2后,还包括以下子步骤:
S23、将所述芯片放入在氮气吹扫的干燥真空箱中,再使用冷氩等离子体在室温下解吸保护层,其中,流速为300sccm。
优选的,所述步骤S4具体包括以下步骤:
将所述键合机吸头在有保护气体的密闭环境下,通过所述键合机吸头吸取所述芯片,并将铜柱部分蘸取所述纳米铜膏。
优选的,在所述步骤S5中,所述保护气体为惰性气体或还原性气体,所述惰性气体为氮气、氩气或氦气;所述还原性气体为氢气、甲醛或一氧化碳。
优选的,在所述步骤S5中,所述键合过程在150-300℃,0-50Mpa压力,0-100kHz超声驱动频率的环境下进行。
第二方面,本发明实施例提供一种超细节距全铜互连结构,所述超细节距全铜由上述的超细节距全铜互连方法制得。
与相关技术相比,本发明通过制备纳米铜膏,通过加入溶剂、分散剂和粘度调节剂调配至一定浓度;选取一定铜柱直径以及数量的芯片和基板,并将所述基板及所述芯片清洗干净后进行预处理;将所述基板加载到键合机中,所述键合机吸取带有铜柱I/O输出端口的所述芯片并进行翻转,使铜柱结构朝外;所述键合机的吸头吸取所述芯片将所述铜柱结构浸入所述纳米铜膏中蘸取后提起;通入保护气体,所述铜柱与所述基板上对应的垫片通过所述键合机的光学系统对准并施加压力,超声和温度以进行键合;室温下冷却得到超细节距全铜半导体互连结构。本发明具有低温烧结,全铜互连的特点,且蘸取铜膏的方式有效突破了传统的涂敷焊料法在实现超细节距互连上的极限,可以实现更细节距的互连,可满足高密度封装的要求。
附图说明
下面结合附图详细说明本发明。通过结合以下附图所作的详细描述,本发明的上述或其他方面的内容将变得更清楚和更容易理解。附图中:
图1为本发明超细节距全铜互连方法的方法流程图;
图2为本发明S2的方法流程图;
图3为本发明超细节距全铜互连方法的总示意图。
具体实施方式
下面结合附图详细说明本发明的具体实施方式。
在此记载的具体实施方式/实施例为本发明的特定的具体实施方式,用于说明本发明的构思,均是解释性和示例性的,不应解释为对本发明实施方式及本发明范围的限制。除在此记载的实施例外,本领域技术人员还能够基于本申请权利要求书和说明书所公开的内容采用显而易见的其它技术方案,这些技术方案包括采用对在此记载的实施例的做出任何显而易见的替换和修改的技术方案,都在本发明的保护范围之内。
实施例1
请参考图1-图3所示,本发明提供一种超细节距全铜互连方法,包括以下步骤:
步骤S1、制备纳米铜膏,通过加入溶剂、分散剂和粘度调节剂调配至一定浓度。
步骤S2、选取一定铜柱直径及数量的芯片和基板,并将所述基板及所述芯片清洗干净后进行预处理。
步骤S3、将所述基板加载到键合机中,所述键合机吸取带有铜柱I/O输出端口的所述芯片并进行翻转,使铜柱结构朝外。
步骤S4、所述键合机的吸头吸取所述芯片将所述铜柱结构浸入所述纳米铜膏中蘸取后提起。
步骤S5、通入保护气体,所述铜柱与所述基板上对应的垫片通过所述键合机的光学系统对准并施加压力,超声和温度以进行键合。
步骤S6、室温下冷却得到超细节距全铜半导体互连结构。
具体的,通过上述步骤S1-S6,本发明具有低温烧结,全铜互连的特点,且蘸取铜膏的方式有效突破了传统的涂敷焊料法在实现超细节距互连上的极限,可以实现更细节距的互连,可满足高密度封装的要求。这样可以实现超细节距互连。可以实现纯铜互连,不存在其他金属间化合物。蘸取铜膏的方式可以实现比传统涂敷方法更细节距的互连。通过纳米铜材料的低熔点实现更低温度的互连。
在本实施例中,所述步骤S1具体包括以下子步骤:将纳米铜颗粒、溶剂、分散剂和粘度调节剂调配成纳米铜膏,其中所述纳米铜颗粒浓度≥80%,粒径≤100nm。
具体的,将纳米铜颗粒、溶剂、分散剂和粘度调节剂放入容器中进行搅拌,以使纳米铜颗粒、溶剂、分散剂和粘度调节剂混合均匀,从而调配成适应的纳米铜膏。其中所述纳米铜颗粒浓度≥80%,粒径≤100nm。使得烧结效果更佳,成品效率快。
在本实施例中,在所述步骤S1中,所述溶剂为乙二醇、松油醇、聚乙二醇、松香、丙酮、三氯甲烷、环己烷、环氧氯丙烷、环氧树脂、伯胺、叔胺中的一种或多种。使得纳米铜颗粒的溶剂效果好,催化效果良好,反应效率高。
所述分散剂为阿拉伯胶、聚乙烯醇、聚乙二醇、明胶、聚乙烯烷酮咪唑、1-甲基咪唑、2-甲基咪唑、4-甲基咪唑、苯基咪唑和2-乙基咪唑中的一种或多种。具有亲油性和亲水性两种相反性质的界面活性剂。可均一分散那些难于溶解于液体的无机,有机颜料的固体及液体颗粒,同时也能防止颗粒的沉降和凝聚,形成安定悬浮液所需的两亲性试剂。方便溶解纳米铜颗粒,调配效果好。
所述粘度调节剂为甲基纤维素、乙基纤维素、羟基纤维素、伯胺、叔胺和酸酐中的一种或多种。甲基纤维素具有优良的润湿性、分散性、粘接性、增稠性、乳化性、保水性和成膜性,以及对油脂的不透性。因此,粘度调节剂能够增加纳米铜颗粒、溶剂、分散剂的反应效率。
在本实施例中,所述步骤S2具体包括以下子步骤:
步骤S21、选取铜柱直径为5μm-50μm,芯片间距为10μm-100μm,铜柱数量为4-500的芯片以及基板;
步骤S22、将所述基板和所述芯片进行清洗和预处理。
具体的,通过上述步骤S21-S22,铜柱选取适中,芯片间距良好,便于对基板和芯片进行清洗和预处理,使得基板和芯片的表面干净,方便进行处理。
在本实施中,所述预处理包括使用酸处理、等离子体处理和SAM中的一种或几种。
其中,酸处理包括稀硫酸处理和稀盐酸处理等。用于去除基板和芯片表面的金属灰尘。
等离子体处理包括Ar等离子体处理和N2等离子体钝化表面。
SAM处理包括使用RCA清洗后将芯片浸入丙硫醇溶液(1mM)中。
在本实施例中,在所述步骤S2后,还包括以下子步骤:
步骤S23、将所述芯片放入在氮气吹扫的干燥真空箱中,再使用冷氩等离子体在室温下解吸保护层,其中,流速为300sccm。
在本实施例中,所述步骤S4具体包括以下步骤:
将所述键合机吸头在有保护气体的密闭环境下,通过所述键合机吸头吸取所述芯片,并将铜柱部分蘸取所述纳米铜膏。
在本实施例中,在所述步骤S5中,所述保护气体为惰性气体或还原性气体,所述惰性气体为氮气、氩气或氦气;所述还原性气体为氢气、甲醛或一氧化碳。处理过程中保护效果好,安全性高。
在本实施例中,在所述步骤S5中,所述键合过程在150-300℃,0-50Mpa压力,0-100kHz超声驱动频率的环境下进行。
实施例2
本发明提供一种超细节距全铜互连方法,包括以下步骤:
步骤S1:在纳米铜粉中加入乙二醇、明胶和甲基纤维素调配至80%的浓度。
步骤S2:选取铜柱直径为5μm,芯片间距为10μm,具有200个铜柱凸点的芯片以及基板。将基板和芯片使用稀硫酸超声清洗以提高后续蘸取铜膏的附着力。
步骤S3:将基板加载到键合机中,键合机吸取带有铜柱I/O输出端口的芯片并进行翻转,使铜柱结构朝外。
步骤S4:键合机吸头吸取芯片将铜柱结构浸入纳米铜膏中蘸取后提起。
步骤S5:通入氮气,铜柱与基板上对应的垫片通过键合机的光学系统对准并施加5Mpa压力、50kHz超声驱动频率和260℃的温度以进行键合。
步骤S6:室温下冷却得到超细节距全铜半导体互连结构,通过测试得到整体剪切强度为23.13Mpa,铜柱的剪切强度为0.12N/凸点,电阻率为6.2μΩcm,且高温存储测试通过率为98%。
实施例3
本发明提供一种超细节距全铜互连方法,包括以下步骤:
步骤S1:使用化学法制备纳米铜膏并加入三氯甲烷、2-甲基咪唑和叔胺调配至85%的浓度。
步骤S2:选取铜柱直径为20μm,芯片间距为40μm,具有100个铜柱凸点的芯片以及基板。将基板和芯片使用Ar等离子体处理以清洁活化表面,流速、射频功率和压力分别为140sccm、100w和130Pa。再使用N2等离子体钝化表面以防止氧化,流速、射频功率和压力分别为250sccm、100w和130Pa。
步骤S3:将基板加载到键合机中,键合机吸取带有铜柱I/O输出端口的芯片并进行翻转,使铜柱结构朝外。
步骤S4:键合机吸头吸取芯片将铜柱结构浸入纳米铜膏中蘸取后提起。
步骤S5:通入氢氩混合气(Ar 95%+H2 5%),铜柱与基板上对应的垫片通过键合机的光学系统对准并施加2Mpa压力,10kHz超声驱动频率和200℃的温度以进行键合。
步骤S6:室温下冷却得到超细节距全铜半导体互连结构,通过测试得到整体剪切强度为18.38Mpa,铜柱的剪切强度为0.21N/凸点,电阻率为14.5μΩcm,且高温存储测试通过率为95%。
实施例4
本发明提供一种超细节距全铜互连方法,包括以下步骤:
步骤S1:使用化学法制备原位纳米铜膏并加入丙酮、苯基咪唑和酸酐调配至90%的浓度。
步骤S2:选取铜柱直径为15μm,芯片间距为30μm,具有50个铜柱凸点的芯片以及基板。将基板和芯片使用稀盐酸进行清洗后使用H2等离子体处理,流速、射频功率和压力分别为300sccm、100w和100Pa。
步骤S3:将基板加载到键合机中,键合机吸取带有铜柱I/O输出端口的芯片并进行翻转,使铜柱结构朝外。
步骤S4:键合机吸头吸取芯片将铜柱结构浸入纳米铜膏中蘸取后提起。
步骤S5:通入氩气,铜柱与基板上对应的垫片通过键合机的光学系统对准并施加10Mpa压力,20kHz超声驱动频率和300℃的温度以进行键合。
步骤S6:室温下冷却得到超细节距全铜半导体互连结构,通过测试得到整体剪切强度为31.59Mpa,铜柱的剪切强度为0.45N/凸点,电阻率为4.6μΩcm,且高温存储测试通过率为98%。
实施例5
本发明提供一种超细节距全铜互连方法,包括以下步骤:
步骤S1:在纳米铜粉中加入松油醇、阿拉伯胶和乙基纤维素调配至90%的浓度。
步骤S2:选取铜柱直径为25μm,芯片间距为50μm具有80个铜柱凸点的芯片以及基板。将基板和芯片使用RCA清洗后将芯片浸入丙硫醇溶液(1mM)中。
步骤S23:将芯片放入在氮气吹扫的干燥真空箱中,再使用冷氩等离子体在室温下解吸保护层,流速为300sccm。
步骤3:将基板加载到键合机中,键合机吸取带有铜柱I/O输出端口的芯片并进行翻转,使铜柱结构朝外。
步骤4:键合机吸头吸取芯片将铜柱结构浸入纳米铜膏中蘸取后提起。
步骤5:通入氮气,铜柱与基板上对应的垫片通过键合机的光学系统对准并施加50Mpa压力,80kHz超声驱动频率和200℃的温度以进行键合。
步骤6:室温下冷却得到超细节距全铜半导体互连结构,通过测试得到整体剪切强度为25.43Mpa,铜柱的剪切强度为0.24N/凸点,电阻率为12.7μΩcm,且高温存储测试通过率为97%。
综上,通过上述实施例2-实施例5可知,超细节距全铜半导体互连结构的整体剪切强度为18-38Mpa-31.59Mpa,铜柱的剪切强度为0.12N/凸点-0.42N/凸点,电阻率为4.6μΩcm-14.5μΩcm,高温存储测试通过率为95%-98%。剪切强度高,电阻率小,高温存储测试通过率高,从而实现超细节距互连上的极限,可以实现更细节距的互连,可满足高密度封装的要求。
本发明实施例提供一种超细节距全铜互连结构,所述超细节距全铜由上述实施例1-实施例5的超细节距全铜互连方法制得。该超细节距全铜实现更细节距的互连,可满足高密度封装的要求。
以上所述仅为本发明的优选实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何纂改、等同替换、改进等,均应包含在本发明的权利要求范围之内。
Claims (8)
1.一种超细节距全铜互连方法,其特征在于,包括以下步骤:
S1、制备纳米铜膏,通过加入溶剂、分散剂和粘度调节剂调配至一定浓度;
S2、选取一定铜柱直径及数量的芯片和基板,并将所述基板及所述芯片清洗干净后进行预处理;
所述步骤S2具体包括以下子步骤:
S21、选取铜柱直径为5μm-50μm,芯片间距为10μm-100μm,铜柱数量为4-500的芯片以及基板;
S22、将所述基板和所述芯片进行清洗和预处理;
所述预处理包括使用酸处理、等离子体处理和SAM中的一种或几种;
S3、将所述基板加载到键合机中,所述键合机吸取带有铜柱I/O输出端口的所述芯片并进行翻转,使铜柱结构朝外;
S4、所述键合机的吸头吸取所述芯片将所述铜柱结构浸入所述纳米铜膏中蘸取后提起;
S5、通入保护气体,所述铜柱与所述基板上对应的垫片通过所述键合机的光学系统对准并施加压力,超声和温度以进行键合;
S6、室温下冷却得到超细节距全铜半导体互连结构。
2.如权利要求1所述的超细节距全铜互连方法,其特征在于,所述步骤S1具体包括以下子步骤:
将纳米铜颗粒、溶剂、分散剂和粘度调节剂调配成纳米铜膏,其中所述纳米铜颗粒浓度≥80%,粒径≤100nm。
3.如权利要求2所述的超细节距全铜互连方法,其特征在于,在所述步骤S1中,所述溶剂为乙二醇、松油醇、聚乙二醇、松香、丙酮、三氯甲烷、环己烷、环氧氯丙烷、环氧树脂、伯胺、叔胺中的一种或多种;
所述分散剂为阿拉伯胶、聚乙烯醇、聚乙二醇、明胶、聚乙烯烷酮咪唑、1-甲基咪唑、2-甲基咪唑、4-甲基咪唑、苯基咪唑和2-乙基咪唑中的一种或多种;
所述粘度调节剂为甲基纤维素、乙基纤维素、羟基纤维素、伯胺、叔胺和酸酐中的一种或多种。
4.如权利要求1所述的超细节距全铜互连方法,其特征在于,在所述步骤S2后,还包括以下子步骤:
S23、将所述芯片放入在氮气吹扫的干燥真空箱中,再使用冷氩等离子体在室温下解吸保护层,其中,流速为300sccm。
5.如权利要求1所述的超细节距全铜互连方法,其特征在于,所述步骤S4具体包括以下步骤:
将所述键合机吸头在有保护气体的密闭环境下,通过所述键合机吸头吸取所述芯片,并将铜柱部分蘸取所述纳米铜膏。
6.如权利要求1所述的超细节距全铜互连方法,其特征在于,在所述步骤S5中,所述保护气体为惰性气体或还原性气体,所述惰性气体为氮气、氩气或氦气;所述还原性气体为氢气、甲醛或一氧化碳。
7.如权利要求1所述的超细节距全铜互连方法,其特征在于,在所述步骤S5中,所述键合过程在150-300℃,0-50Mpa压力,0-100kHz超声驱动频率的环境下进行。
8.一种超细节距全铜互连结构,其特征在于,所述超细节距全铜由权利要求1-7任一项所述的超细节距全铜互连方法制得。
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