CN1156075C - 用导电粘合剂连接至基座上的表面波装置 - Google Patents

用导电粘合剂连接至基座上的表面波装置 Download PDF

Info

Publication number
CN1156075C
CN1156075C CNB008037299A CN00803729A CN1156075C CN 1156075 C CN1156075 C CN 1156075C CN B008037299 A CNB008037299 A CN B008037299A CN 00803729 A CN00803729 A CN 00803729A CN 1156075 C CN1156075 C CN 1156075C
Authority
CN
China
Prior art keywords
surface wave
wave device
anisotropic
package surface
pedestal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB008037299A
Other languages
English (en)
Other versions
CN1340240A (zh
Inventor
-
恩戈克-图安·恩古亚
�ˡ����˶�������˹
简-马克·布朗
���ٰ�¡
克里斯蒂安·勒隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of CN1340240A publication Critical patent/CN1340240A/zh
Application granted granted Critical
Publication of CN1156075C publication Critical patent/CN1156075C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders; Supports
    • H03H9/058Holders; Supports for surface acoustic wave devices
    • H03H9/0585Holders; Supports for surface acoustic wave devices consisting of an adhesive layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0556Disposition
    • H01L2224/05568Disposition the whole external layer protruding from the surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05573Single external layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16235Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a via metallisation of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/0781Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811Extrinsic, i.e. with electrical conductive fillers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16152Cap comprising a cavity for hosting the device, e.g. U-shaped cap

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Wire Bonding (AREA)

Abstract

本发明涉及通过导电材料连接至基座的表面波装置,所述导电材料在垂直于表面波装置的平面和基座平面的方向呈现各向异性。该各向异性导电材料提供了表面波装置的机械功效和封装。各向异性导电材料以具有空腔的方式淀积在基座平面上,表面声波可以在该空腔中传播。

Description

用导电粘合剂连接至基座上的表面波装置
技术领域
本发明的领域为用在电子领域的表面波器件,特别是用于选择频带目的的RF或IF滤波器。
背景技术
这些器件利用了压电基板上表面波声学传播的原理。为了确保满意的编码声波传播,必须保护器件表面免于污染和任何机械压力。
另外,由于声波在压电基板的表面上传输,必须使该表面自由以不影响声波的传输,这构成了封装方面的进一步限制。
目前的表面波滤波器封装技术在于两部封装,如图1所示:一个陶瓷或有机基座01,和一个陶瓷、金属或有机盖件02,通过焊接或胶合对其封装,确保器件密封并具有必要的空腔。在这种类型的包装中,表面波装置(SAW)03可以通过胶合至基座加以组装。通过基座01的金属化通路提供了SAW的内部垫片011、012与外部垫片071和072之间的电连接。
图1表示现有技术的一个例子,其中SAW与外部的电连接是缆线型的。为了提供更好的紧凑性,目前采用的是“倒装(flip chip)”式技术(将器件倒转)。图2表示根据公知技术的封装SAW的一个例子,其构成了图1的一个变型。在美国专利US5252882中详细发展了倒转方法。SAW通过称作“凸起(bump)”的金属珠使其工作面朝向基座,其中金属珠提供了SAW与基座之间的电连接以及该组件的机械功效。然而,这些金属珠的有限数量和小尺寸限制了组件的机械功效。
因此有人提出采用封装树脂来加强提供SAW与基座之间电连接的这些金属珠的机械功效。这些树脂在欧洲专利EP 0896427 A2中有详细描述。
发明内容
在本文中,本发明提出了一种新的表面波器件,包括一个SAW,其工作面朝向基座安装,并且借助各向异性导电粘合剂组装至所述基座上。
各向异性导电粘合剂有利地提供了电连接作用。
更具体地说,本发明的主题为一种封装的表面波器件,包括:
一个表面波装置(SAW),位于一个压电基板的表面即所谓工作面上,该装置具有连接至导电总线的交指型电极;以及
一个基座(E),具有连接至外部导电垫片的基座电极;该表面波装置的工作面通过沿垂直于表面波装置平面的轴Z呈各向异性的导电粘合剂,在导电总线相对基座电极的层面以提供电连接的方式组装至基座上,基座电极具有梳状结构,呈现梳柄(ME12)和梳齿(DE12),基座电极具有减轻形成防止各向异性导电粘合剂蔓延向表面波装置工作区的屏障的结构,基座电极具有局部加厚区域(Zc)并适于局部压缩各向异性导电粘合剂(ACF)。
根据本发明的一个变型,各向异性导电粘合剂也可以以能够实现所述装置封装的方式设置于表面波装置的整个外周。
基座电极具有适于局部压缩各向异性导电粘合剂的结构,这是挤压导电颗粒的必要条件。根据本发明,因而不必使凸起位于基座或SAW上。该结构包括一系列允许局部压缩的局部加厚部分,大约在数十微米的量级。
根据本发明的一个优选变型,各向异性导电粘合剂为含有导电颗粒和粘结料的复合材料。
根据本发明的一个变型,基座电极构成防止各向异性导电粘合剂蔓延至表面波装置工作区的屏障。优选地,这些电极可以是梳状,其齿垂直于表面波装置声波传输的方向。
附图简要说明
在阅读下述说明之后可以更好地理解本发明并清楚本发明的其它优点,这些说明是以非限制性示例方式并借助附图给出的,附图中:
图1和2表示根据公知技术封装的表面波装置。
图3表示本发明采用的组装程序。图3a表示两个电极之间无应力的各向异性导电材料,图3b表示两个电极之间处于压缩状态的各向异性导电材料。
图4表示一例含有两个传感器的表面波装置。
图5a至5c表示可用于本发明的基座的例子。
图6表示一例覆盖在表面声波装置上的各向异性导电材料。
图7表示一例根据本发明封装的装置。
图8表示一例根据本发明的装置,封装于标准包装中。
具体实施方式
一般地说,本发明的器件包括表面波装置,特征在于通过各向异性导电粘合剂安装成工作面朝向基座并组装至该基座,其中各向异性导电粘合剂既具有电子作用也具有机械作用。该粘合剂该提供吸声作用。
各向异性导电粘合剂材料呈现在一定方向导电的特性,如图3所示,其中图示了含有粘结料和导电颗粒的导电粘合剂薄膜。典型地,该材料插入在电极之间,然后热压,可以提供仅沿Z方向的电接触。图3a画出了无应力的ACF薄膜,图3b表示热压操作,使得可以提供所述两个电极之间的电接触。更具体地说,这些图示表示了一个变型,其中基座E包括梳状电极,梳齿DE以剖面表示,与SAW的电极相对。
通过待组装的两个表面之间的压力传递,沿对应子导电轴的z(图示)轴挤压所述颗粒,可以实现电传导。
在本发明的框架中,一个电极对应于表面声波装置的电极,另一个电极可以制作在基座的表面,这在后面将有更详细的描述。
为了提供用于将待连接的两个导电表面加以粘结的材料的所需各向异性,最好可以用热固性或热塑性聚合物,填充以由特别是金或镍淀积而加以金属化的聚合物颗粒。颗粒的大小可以在数微米至大约20微米之间变化。颗粒密度一般可以在1000粒/mm2至15000粒/mm2的量级。
在本发明的框架中,各向异性导电材料使得可以将声波装置粘合至基座上。
更详细地说,我们应当描述一例表面声波装置,制作在石英型钽酸锂压电基板的表面上,其上通过真空蒸镀制作有构成产生声波工作面的交指型电极梳,和一般由铝制成用以对电极梳供电的总线。图4画出了一例这种装置。在压电基板的表面上制作有两个传感器T1和T2,各分别包括两条总线B11、B12,B21、B22,和电极梳P1和P2。表面声波装置的后表面可以加上细纹以吸收体声波。
基座E在图5a中表示。在其一面上具有电极E11、E12、E21、E22,用以提供前述传感器T1和T2的总线B11、B12、B21、B22的接触,在其另一面上(未画出),导电垫片使得可以提供与外部的电接触,可以包括例如待连接至表面声波装置的印刷电路。穿过基座制作的导电通路提供电极E11、E12、E21、E22与外部导电垫片之间的电连接。在此技术中,基座可以由陶瓷(Al2O3)或填充聚合物(例如环氧玻璃树脂)制成或者由聚欧亚肢薄膜(例如Kapton)制成。
各向异性导电材料的作用在于将声波装置机械组装并电连接至基座。为此,各向异性导电材料(ACM)可以同等好地淀积在基座一侧或者装置一侧。在选择ACM薄膜时,特别可能使用由激光或任何其它方法预先机械切割的预制件。在选择粘结剂时,可以通过丝网印刷、喷射淀积进行淀积。还可以实施淀积来覆盖基板或基座的整个表面,然后通过化学、机械蚀刻或通过激光切除进行定域,以清除用于表面波传播的自由空间。在所有情况下,该材料都淀积在相对电连接区域(总线/基座电极)的层面上,但是该导电材料的各向异性特性使得可以淀积在比待连接区域更为扩展的表面上,而不会使位于同一层面上的独立导电区域发生短路。该材料可以有利地特别定位于如下位置:
—在表面波装置的非工作表面上,以通过增加粘结面积和分散机械应力来增强该组件的机械功效。
—在表面波装置的特定区域上,以在必要时吸收表面声波(这一般可能会消除来自装置边缘的反射并消除不同工作区域之间的声波耦合)。
—在表面波装置的整个外周,以提供其密封,如图6所示。
另外,为了提供导电各向异性材料的校准厚度并校准由此限定的空腔高度,可以采用金属珠(称作凸起)淀积在表面波装置一侧。
还可以在卸荷装置一侧或基座一侧形成结构以局部压缩各向异性导电粘合剂,用以控制各向异性导电材料的蔓延并且特别是防止其移向该装置的工作面。这包括梳状电极,如图5b所示。具体地说,在制作基座基板组件时,最好在电极梳的梳齿上设置各向异性导体。在压力和温度的作用下,由电极并且更具体地说由梳柄构成的屏障阻止了各向异性导体的蔓延,如图5c所示。梳齿DE12具有包括加厚区的结构,使得可以在区域Zc局部压结粘合剂。根据本发明,因而不必在基座上或SAW上制作凸起。区域Zf表示相对于未压缩导电粘合剂蔓延的区域。由梳柄构成的区域Zb形成对各向异性导电粘合剂ACF朝向工作区域蔓延的屏障区域。
在各向异性导电材料层面上制作所需图纹时,组装有三个单元装置/导电材料/基座。根据各向异性导电材料的种类决定进行该操作的温度和压力。一般地,为获得粘结和建立电接触所必需的压力在10至30巴之间变化,温度在150℃至220℃之间变化。
在上述例子中,各向异性导电材料还提供了密封作用,使得可以设计出一个特别紧凑的表面声波装置,因为其没有浪费空间,如图7所示,其中图7表示沿剖面AA’所示的组装至基座的图6装置。
对于密封限制和强度限制很高的应用场合,图7所示的组件可以同样很好地集成至标准封装中,如图8所示,ACM材料仍然提供了基座与表面声波装置之间的电连接。小壁m和盖件C构成封装包装的上部。

Claims (11)

1.封装表面波器件,其特征在于,包括:
一个表面波装置(SAW),位于一个压电基板的表面即所谓工作面上,该装置具有连接至导电总线的交指型电极;以及
一个基座(E),具有连接至外部导电垫片的基座电极;该表面波装置的工作面通过沿垂直于表面波装置平面的轴Z呈各向异性的导电粘合剂,在导电总线相对基座电极的层面以提供电连接的方式组装至基座上,基座电极具有梳状结构,呈现梳柄(ME12)和梳齿(DE12),基座电极具有减轻形成防止各向异性导电粘合剂蔓延向表面波装置工作区的屏障的结构,基座电极具有局部加厚区域(Zc)并适于局部压缩各向异性导电粘合剂(ACF)。
2.如权利要求1所述的封装表面波器件,其特征在于,所述梳齿垂直于表面波装置的声波传播方向。
3.如权利要求2所述的封装表面波器件,其特征在于,各向异性导电粘合剂淀积在梳齿(DE12)的层面上。
4.如权利要求1-3之一所述的封装表面波器件,其特征在于,所述加厚区域在数十微米的量级。
5.如权利要求1所述的封装表面波器件,其特征在于,各向异性导电粘合剂为含有导电颗粒和粘结料的复合材料。
6.如权利要求5所述的封装表面波器件,其特征在于,粘结料为热固性或热塑性聚合物。
7如权利要求5所述的封装表面波器件,其特征在于,导电颗粒为金属化聚合物颗粒。
8.如权利要求5所述的封装表面波器件,其特征在于,导电颗粒为金属颗粒。
9.如权利要求5所述的封装表面波器件,其特征在于,所述颗粒的直径在数微米至20微米之间。
10.如权利要求1所述的封装表面波器件,其特征在于,各向异性导电粘合剂具有吸声特性。
11.如权利要求1所述的封装表面波器件,其特征在于,所述导电各向异性粘合剂还以实现表面波装置封装的方式设置在该装置的整个外周上。
CNB008037299A 1999-02-12 2000-02-11 用导电粘合剂连接至基座上的表面波装置 Expired - Fee Related CN1156075C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9901722A FR2789822B1 (fr) 1999-02-12 1999-02-12 Dispositif a ondes de surface connecte a une embase avec un adhesif conducteur
FR99/01722 1999-02-12

Publications (2)

Publication Number Publication Date
CN1340240A CN1340240A (zh) 2002-03-13
CN1156075C true CN1156075C (zh) 2004-06-30

Family

ID=9541961

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB008037299A Expired - Fee Related CN1156075C (zh) 1999-02-12 2000-02-11 用导电粘合剂连接至基座上的表面波装置

Country Status (10)

Country Link
US (1) US6556105B1 (zh)
EP (1) EP1157460B1 (zh)
JP (1) JP2002537669A (zh)
KR (1) KR20010102024A (zh)
CN (1) CN1156075C (zh)
CA (1) CA2362736A1 (zh)
DE (1) DE60006365T2 (zh)
FR (1) FR2789822B1 (zh)
HK (1) HK1044860A1 (zh)
WO (1) WO2000048313A1 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2818170B1 (fr) * 2000-12-19 2003-03-07 Thomson Csf Procede de fabrication d'une sonde acoustique multielements utilisant un film polymere metallise et ablate comme plan de masse
DE10351429B4 (de) * 2003-11-04 2013-10-31 Epcos Ag SAW Bauelement mit Klebestelle und Verwendung dafür
CN100507548C (zh) * 2003-12-30 2009-07-01 3M创新有限公司 检测目标生物分析物的系统及方法
CN100567976C (zh) * 2003-12-30 2009-12-09 3M创新有限公司 表面声波传感器组件和传感器盒
US7259499B2 (en) * 2004-12-23 2007-08-21 Askew Andy R Piezoelectric bimorph actuator and method of manufacturing thereof
JP4770643B2 (ja) * 2005-10-12 2011-09-14 エプソントヨコム株式会社 圧電デバイス及び、その製造方法
US20100151553A1 (en) * 2006-12-29 2010-06-17 Bjork Jason W Method of detection of bioanalytes by acousto-mechanical detection systems comprising the addition of liposomes
KR102024608B1 (ko) * 2017-01-11 2019-09-24 엘지전자 주식회사 센서
CN111371429B (zh) * 2018-12-26 2022-07-12 中芯集成电路(宁波)有限公司上海分公司 控制电路与声波滤波器的集成方法和集成结构
US11063571B2 (en) * 2019-07-25 2021-07-13 Zhuhai Crystal Resonance Technologies Co., Ltd. Packaged electronic components

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2605139A1 (fr) 1986-10-10 1988-04-15 Europ Composants Electron Condensateur du type a film de polymere et a stabilite en temperature elevee
FR2627008B1 (fr) 1988-02-05 1990-06-08 Europ Composants Electron Procede d'impregnation de condensateurs electrolytiques par des sels de tetracyanoquinodimethane
FR2666173A1 (fr) 1990-08-21 1992-02-28 Thomson Csf Structure hybride d'interconnexion de circuits integres et procede de fabrication.
FR2670021B1 (fr) 1990-12-04 1994-03-04 Thomson Csf Procede de realisation de microlentilles pour applications optiques.
FR2685080B1 (fr) 1991-12-17 1995-09-01 Thomson Csf Capteur mecanique comprenant un film de polymere.
FR2701602B1 (fr) 1993-02-12 1995-03-31 Thomson Csf Détecteur thermique comprenant un isolant thermique en polymère expansé.
FR2702309B1 (fr) 1993-03-05 1995-04-07 Thomson Csf Procédé de fabrication d'une sonde acoustique multiéléments, notamment d'une sonde d'échographie.
JPH07154185A (ja) * 1993-10-04 1995-06-16 Nec Corp 弾性表面波装置およびその製造方法
US5939817A (en) * 1994-09-22 1999-08-17 Nippon Electric Co Surface acoustic wave device
US6262513B1 (en) * 1995-06-30 2001-07-17 Kabushiki Kaisha Toshiba Electronic component and method of production thereof
FR2740933B1 (fr) 1995-11-03 1997-11-28 Thomson Csf Sonde acoustique et procede de realisation
JPH09162693A (ja) * 1995-12-14 1997-06-20 Kokusai Electric Co Ltd 弾性表面波素子
FR2745973B1 (fr) 1996-03-08 1998-04-03 Thomson Csf Memoire de masse et procede de fabrication de memoire de masse
JP3196693B2 (ja) * 1997-08-05 2001-08-06 日本電気株式会社 表面弾性波装置およびその製造方法
US6287894B1 (en) * 1999-10-04 2001-09-11 Andersen Laboratories, Inc. Acoustic device packaged at wafer level
FR2799883B1 (fr) 1999-10-15 2003-05-30 Thomson Csf Procede d'encapsulation de composants electroniques

Also Published As

Publication number Publication date
WO2000048313A1 (fr) 2000-08-17
FR2789822B1 (fr) 2001-06-08
EP1157460A1 (fr) 2001-11-28
US6556105B1 (en) 2003-04-29
HK1044860A1 (en) 2002-11-01
EP1157460B1 (fr) 2003-11-05
CA2362736A1 (fr) 2000-08-17
CN1340240A (zh) 2002-03-13
KR20010102024A (ko) 2001-11-15
JP2002537669A (ja) 2002-11-05
DE60006365T2 (de) 2004-09-16
FR2789822A1 (fr) 2000-08-18
DE60006365D1 (de) 2003-12-11

Similar Documents

Publication Publication Date Title
CN1206807C (zh) 电子元件封装方法
CN1158757C (zh) 封装的表面声波部件及其制造方法
CN1156075C (zh) 用导电粘合剂连接至基座上的表面波装置
KR100866433B1 (ko) 탄성파 디바이스 및 그 제조 방법
CN1169235C (zh) 电子部件、尤其是利用声表面波工作的电子部件-ofw部件
US7474175B2 (en) Surface acoustic wave device
JP2002504773A (ja) 電子コンポーネントの作製方法、例えば、音響表面波で動作する表面波−コンポーネントの作製方法
CN1581686A (zh) 导电性粘合剂及使用该粘合剂安装压电元件的压电器件
JPH10270975A (ja) 電子部品とその製造方法
JP2005505939A (ja) 電気的な素子のカプセル化方法およびこれによりカプセル化された表面弾性波素子
CN1105397C (zh) 适于倒装法组装的电气元件触极的制作方法
JP2004031651A (ja) 素子実装基板及びその製造方法
JP4802184B2 (ja) 圧電発振素子及びそれを用いた圧電発振部品
JP2002334954A (ja) 電子装置およびその製造方法ならびに電子部品保護用キャップおよびその製造方法
US9386703B2 (en) Electronic device
US5119172A (en) Microelectronic device package employing capacitively coupled connections
CN108933577B (zh) 声波装置及制造声波装置的方法
JPH09181562A (ja) 二層配置弾性表面波素子
JP4720846B2 (ja) 水晶振動デバイス
CN114024520B (zh) 声学装置双层覆膜工艺
CN1236555C (zh) 一种压电谐振元件
JP2000040762A (ja) 電子素子封止用パッケージ及び電子素子封止構体
JPH11136076A (ja) 圧電振動子
CN220067387U (zh) 一种声表滤波器射频模组封装结构、电子设备
JPH1155057A (ja) 固体素子デバイスの製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
REG Reference to a national code

Ref country code: HK

Ref legal event code: GR

Ref document number: 1044860

Country of ref document: HK

C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee