CN1155996C - 制造适于表面贴装的半导体器件的方法 - Google Patents
制造适于表面贴装的半导体器件的方法 Download PDFInfo
- Publication number
- CN1155996C CN1155996C CNB961904887A CN96190488A CN1155996C CN 1155996 C CN1155996 C CN 1155996C CN B961904887 A CNB961904887 A CN B961904887A CN 96190488 A CN96190488 A CN 96190488A CN 1155996 C CN1155996 C CN 1155996C
- Authority
- CN
- China
- Prior art keywords
- semiconductor element
- row
- semiconductor
- die cavity
- tie point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 134
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 43
- 239000000463 material Substances 0.000 claims abstract description 17
- 239000004020 conductor Substances 0.000 claims abstract description 15
- 230000001681 protective effect Effects 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 238000005538 encapsulation Methods 0.000 claims description 10
- 229920005989 resin Polymers 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 2
- 230000001427 coherent effect Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 238000000742 single-metal deposition Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/37147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/3754—Coating
- H01L2224/37599—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/848—Bonding techniques
- H01L2224/84801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01058—Cerium [Ce]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Wire Bonding (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
Claims (5)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP95201234 | 1995-05-12 | ||
EP95201234.2 | 1995-05-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1157057A CN1157057A (zh) | 1997-08-13 |
CN1155996C true CN1155996C (zh) | 2004-06-30 |
Family
ID=8220286
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB961904887A Expired - Fee Related CN1155996C (zh) | 1995-05-12 | 1996-05-07 | 制造适于表面贴装的半导体器件的方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US5712197A (zh) |
EP (1) | EP0770266B1 (zh) |
JP (1) | JP4129842B2 (zh) |
CN (1) | CN1155996C (zh) |
DE (1) | DE69609921T2 (zh) |
MY (1) | MY132219A (zh) |
TW (1) | TW302595B (zh) |
WO (1) | WO1996036071A2 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5990490A (en) * | 1998-06-29 | 1999-11-23 | Miracle Technology Co., Ltd. | Optical electronic IC capable of photo detection |
US6008535A (en) * | 1998-09-17 | 1999-12-28 | Advanced Ceramic X Corp. | Method of making a semiconductor diode from laminated ceramic tape |
US6159771A (en) * | 1999-07-27 | 2000-12-12 | Smtek Inc. | Method of manufacturing diodes |
US20070117268A1 (en) * | 2005-11-23 | 2007-05-24 | Baker Hughes, Inc. | Ball grid attachment |
TW200836315A (en) * | 2007-02-16 | 2008-09-01 | Richtek Techohnology Corp | Electronic package structure and method thereof |
EP2242094A1 (en) | 2009-04-17 | 2010-10-20 | Nxp B.V. | Foil and method for foil-based bonding and resulting package |
CN103824784B (zh) * | 2010-05-05 | 2016-10-12 | 万国半导体有限公司 | 用连接片实现连接的半导体封装的方法 |
TWI559576B (zh) * | 2013-11-05 | 2016-11-21 | Sfi Electronics Technology Inc | A chip type diode package element and its manufacturing method |
TWI651830B (zh) * | 2015-02-17 | 2019-02-21 | 立昌先進科技股份有限公司 | 多功能小型化表面黏著型電子元件及其製法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3148778A1 (de) * | 1981-05-21 | 1982-12-09 | Resista Fabrik elektrischer Widerstände GmbH, 8300 Landshut | Bauelemente in chip-bauweise und verfahren zu dessen herstellung |
JPS59143348A (ja) * | 1983-02-07 | 1984-08-16 | Hitachi Ltd | 電子部品 |
JPS60145525A (ja) * | 1984-01-10 | 1985-08-01 | Canon Inc | 磁気記録媒体 |
US4660127A (en) * | 1985-12-17 | 1987-04-21 | North American Philips Corporation | Fail-safe lead configuration for polar SMD components |
KR960006710B1 (ko) * | 1987-02-25 | 1996-05-22 | 가부시기가이샤 히다찌세이사꾸쇼 | 면실장형 반도체집적회로장치 및 그 제조방법과 그 실장방법 |
EP0509065A1 (en) * | 1990-08-01 | 1992-10-21 | Staktek Corporation | Ultra high density integrated circuit packages, method and apparatus |
US5281849A (en) * | 1991-05-07 | 1994-01-25 | Singh Deo Narendra N | Semiconductor package with segmented lead frame |
KR970002140B1 (ko) * | 1993-12-27 | 1997-02-24 | 엘지반도체 주식회사 | 반도체 소자, 패키지 방법, 및 리드테이프 |
US5478402A (en) * | 1994-02-17 | 1995-12-26 | Ase Americas, Inc. | Solar cell modules and method of making same |
US5550086A (en) * | 1995-12-27 | 1996-08-27 | Tai; George | Ceramic chip form semiconductor diode fabrication method |
-
1996
- 1996-05-07 DE DE69609921T patent/DE69609921T2/de not_active Expired - Lifetime
- 1996-05-07 WO PCT/IB1996/000408 patent/WO1996036071A2/en active IP Right Grant
- 1996-05-07 CN CNB961904887A patent/CN1155996C/zh not_active Expired - Fee Related
- 1996-05-07 JP JP53391396A patent/JP4129842B2/ja not_active Expired - Fee Related
- 1996-05-07 EP EP96910160A patent/EP0770266B1/en not_active Expired - Lifetime
- 1996-05-10 MY MYPI96001779A patent/MY132219A/en unknown
- 1996-05-13 US US08/645,436 patent/US5712197A/en not_active Expired - Lifetime
- 1996-05-15 TW TW085105741A patent/TW302595B/zh active
Also Published As
Publication number | Publication date |
---|---|
US5712197A (en) | 1998-01-27 |
DE69609921D1 (de) | 2000-09-28 |
WO1996036071A2 (en) | 1996-11-14 |
TW302595B (zh) | 1997-04-11 |
EP0770266A2 (en) | 1997-05-02 |
EP0770266B1 (en) | 2000-08-23 |
JP4129842B2 (ja) | 2008-08-06 |
CN1157057A (zh) | 1997-08-13 |
WO1996036071A3 (en) | 1997-01-30 |
DE69609921T2 (de) | 2001-03-15 |
MY132219A (en) | 2007-09-28 |
JPH10503329A (ja) | 1998-03-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6580161B2 (en) | Semiconductor device and method of making the same | |
CN1177358C (zh) | 半导体器件的芯片规模表面安装封装及其制造方法 | |
TW434755B (en) | Method for making semiconductors | |
KR100363004B1 (ko) | 조립식반도체칩캐리어 | |
CN1222993C (zh) | 小型半导体封装装置 | |
CN1252753C (zh) | 引线剥离方法、微电子元件连接方法和元件承载体制造系统 | |
CN101053079A (zh) | 堆叠式封装的改进 | |
CN1571151A (zh) | 双规引线框 | |
CN1885536A (zh) | 半导体封装 | |
CN1639864A (zh) | 多行引线框架 | |
CN1147930C (zh) | 半导体封装结构及其制造方法 | |
CN1155996C (zh) | 制造适于表面贴装的半导体器件的方法 | |
US20220319869A1 (en) | Package assembly for plating with selective molding | |
US3629668A (en) | Semiconductor device package having improved compatibility properties | |
CN1675766A (zh) | 电引线架的制造方法,表面安装的半导体器件的制造方法和引线架带 | |
JPH1174420A (ja) | 表面実装型チップ部品及びその製造方法 | |
CN1308839A (zh) | 利用导电的互连接在基片的上下侧之间制造接线的方法和具有该互连接的接线 | |
CN87104825A (zh) | 散热性能改善了的大规模集成电路封装 | |
US20090236705A1 (en) | Apparatus and method for series connection of two die or chips in single electronics package | |
JP2000196153A (ja) | チップ電子部品およびその製造方法 | |
CN1222252A (zh) | 制造半导体封装的方法 | |
KR100453019B1 (ko) | 비교적높은전압들에적합한표면실장용반도체장치제조방법및그반도체장치 | |
CN100336207C (zh) | 半导体装置及其制造方法 | |
CN1324108A (zh) | 用于封装或测试应用中的多线格栅 | |
CN1158705C (zh) | 制造半导体器件的方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: NXP CO., LTD. Free format text: FORMER OWNER: ROYAL PHILIPS ELECTRONICS CO., LTD. Effective date: 20090710 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20090710 Address after: Holland Ian Deho Finn Patentee after: Koninkl Philips Electronics NV Address before: Holland Ian Deho Finn Patentee before: Koninklike Philips Electronics N. V. |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040630 Termination date: 20110507 |