CN115594823A - 一种notch抛光垫的新型配方 - Google Patents
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Abstract
本发明公开了一种notch抛光垫的新型配方,其配比方法包括以下步骤:S1、首先将聚醚多元醇、扩链剂和异氰酸酯按照组分的重量份比称取各相应比例的组分,并放置到相应的储存器皿内部进行备用,使用抛光机进行抛光处理,并在抛光前检查设备状态,保证无异常后进行工艺调节,可根据不同的来料类型,设定不同的加工工艺;S2、然后通过将抛光片进行放置固定到抛光机NOTCH工位上,并且配合采用专用抛光布组成,通过抛光布高速旋转加压于硅片的边缘。本发明通过肖氏硬度高于79D时,PAD的边缘起毛情况得到很好改善,结合新型发泡材质,可杜绝毛刺,防止加工产品出现不良,新型聚氨酯材质抛光垫不起毛刺,加工产品状态较好。
Description
技术领域
本发明涉及半导体制造技术领域,具体为一种notch抛光垫的新型配方。
背景技术
衬底硅片在经历倒角、磨片、酸腐加工过程中会有边缘损伤,硅片边缘的损伤会在硅片的外延层上形成位错缺陷。对边缘初始状态一致的直径为200mm硅单晶片进行酸腐蚀、机械抛光、化学机械抛光及机械抛光加化学机械抛光等不同条件下的边缘抛光实验,使用显微镜观察抛光片的边缘形貌,使用三维光学表面分析仪对抛光片的表面粗糙度进行测量,之后对抛光后的样品进行外延加工,对比经过不同加工方式的抛光后硅片边缘损伤的残留程度。结果表明,酸腐蚀能够去除硅片边缘绝大部分的损伤,机械抛光会重新带入机械损伤,机械抛光后再进行化学机械抛光能彻底消除硅片边缘的损伤层,但相对成本较高。化学机械抛光也能够彻底去除硅片边缘的损伤层,是大尺寸衬底硅片边缘抛光的最优加工工艺,但目前加工CMP wafer所用VN垫会存在边缘起毛刺,造成产品不良的情况。
发明内容
本发明的目的在于提供一种notch抛光垫的新型配方,以解决上述背景技术中提出的目前加工CMP wafer所用VN垫会存在边缘起毛刺,造成产品不良的情况问题。
为实现上述目的,本发明提供如下技术方案:一种notch抛光垫的新型配方,其配比方法包括以下步骤:
S1、首先将聚醚多元醇、扩链剂和异氰酸酯按照组分的重量份比称取各相应比例的组分,并放置到相应的储存器皿内部进行备用,使用抛光机进行抛光处理,并在抛光前检查设备状态,保证无异常后进行工艺调节,可根据不同的来料类型,设定不同的加工工艺。
S2、然后通过将抛光片进行放置固定到抛光机NOTCH工位上,并且配合采用专用抛光布组成,通过抛光布高速旋转加压于硅片的边缘,使得硅片以接触点为圆心做上下旋转运动。
S3、最后在抛光处理过程中可使用高溃度榼脂,使Pad内部橘造更均一化及高密度化对耐摩耗性进行特殊化处理,使pad的寿命提高,使用高modulus褂脂和架桥剂,使pad高硬度化有效抑制对wafer表面的Over Polish进行反应处理。
优选的,一种notch抛光垫的新型配方,其一种notch抛光垫的新型配方的实验辅料组成为:
材质:聚氨酯(PU)
聚醚多元醇(POP);30%;
扩链剂(BDO);10%;
异氰酸酯(MDI);60%。
优选的,所述抛光机设备采用的是晶盛6DZ单抛机系列,且抛光加工处理采用的抛光布数量为2片。
优选的,所述抛光过程中使用高modulus褂脂和架桥剂处理反应产生架桥反応,且架桥反応呈黄白色。
与现有技术相比,本发明的有益效果是:
本发明通过肖氏硬度高于79D时,PAD的边缘起毛情况得到很好改善,同时结合新型发泡材质,可杜绝毛刺,防止加工的产品出现不良,新型聚氨酯材质抛光垫不起毛刺,加工产品状态较好。
本发明通过微孔聚氨酯硬质泡沫垫对抛光和调节的机械响应与泡沫形态高度相关,通过SSMF微孔发泡技术可以提供精确的可调硬度、孔隙率、可压缩性和凹槽图案,同时保留了聚氨酯焊盘的低缺陷优势,在消除高去除率、平面化和低缺陷率之间的权衡方面取得了突破,并且能够在使用过程中提供改进的纹理以驱动更高的去除率和性能稳定性。
附图说明
图1为本发明的加工原理图;
图2为本发明的抛光垫起毛改善对比图;
图3为本发明的数据对比表。
具体实施方式
下面对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
实施例一:
参阅图1-3,本实施例的配比方法包括以下步骤:
S1、首先将聚醚多元醇、扩链剂和异氰酸酯按照组分的重量份比称取各相应比例的组分,并放置到相应的储存器皿内部进行备用,使用抛光机进行抛光处理,并在抛光前检查设备状态,保证无异常后进行工艺调节,可根据不同的来料类型,设定不同的加工工艺。
S2、然后通过将抛光片进行放置固定到抛光机NOTCH工位上,并且配合采用专用抛光布组成,通过抛光布高速旋转加压于硅片的边缘,使得硅片以接触点为圆心做上下旋转运动。
S3、最后在抛光处理过程中可使用高溃度榼脂,使Pad内部橘造更均一化及高密度化对耐摩耗性进行特殊化处理,使pad的寿命提高,使用高modulus褂脂和架桥剂,使pad高硬度化有效抑制对wafer表面的Over Polish进行反应处理。
本实施例中,一种notch抛光垫的新型配方,其一种notch抛光垫的新型配方的实验辅料组成为:
材质:聚氨酯(PU)
聚醚多元醇(POP);30%;
扩链剂(BDO);10%;
异氰酸酯(MDI);60%。
本实施例中,抛光机设备采用的是晶盛6DZ单抛机系列,且抛光加工处理采用的抛光布数量为2片。
本实施例中,抛光过程中使用高modulus褂脂和架桥剂处理反应产生架桥反応,且架桥反応呈黄白色。
实施例二:
与实施例一的区别特征在于:
本实施例的配比方法包括以下步骤:
S1、首先将聚醚多元醇、扩链剂和异氰酸酯按照组分的重量份比称取各相应比例的组分,并放置到相应的储存器皿内部进行备用,使用抛光机进行抛光处理,并在抛光前检查设备状态,保证无异常后进行工艺调节,可根据不同的来料类型,设定不同的加工工艺。
S2、然后通过将抛光片进行放置固定到抛光机NOTCH工位上,并且配合采用专用抛光布组成,通过抛光布高速旋转加压于硅片的边缘,使得硅片以接触点为圆心做上下旋转运动。
S3、最后在抛光处理过程中可使用高溃度榼脂,使Pad内部橘造更均一化及高密度化对耐摩耗性进行特殊化处理,使pad的寿命提高,使用高modulus褂脂和架桥剂,使pad高硬度化有效抑制对wafer表面的Over Polish进行反应处理。
本实施例中,一种notch抛光垫的新型配方,其一种notch抛光垫的新型配方的实验辅料组成为:
材质:聚氨酯(PU)
聚醚多元醇(POP);35%;
扩链剂(BDO);15%;
异氰酸酯(MDI);50%。
本实施例中,抛光机设备采用的是晶盛6DZ单抛机系列,且抛光加工处理采用的抛光布数量为2片。
本实施例中,抛光过程中使用高modulus褂脂和架桥剂处理反应产生架桥反応,且架桥反応呈黄白色。
综上:本发明实施例一中的本发明实验结果表明,相比于实施例二中工艺实验结果,本发明通过肖氏硬度高于79D时,PAD的边缘起毛情况得到更好的改善,同时结合新型发泡材质,可更好的杜绝毛刺,防止加工的产品出现不良,新型聚氨酯材质抛光垫不起毛刺,加工产品状态更加好,因此本发明的效果更加优于实施例二工艺的效果。
需要说明的是,在本文中,诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来,而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且,术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含,从而使得包括一系列要素的过程、工艺、物品或者设备不仅包括那些要素,而且还包括没有明确列出的其他要素,或者是还包括为这种过程、工艺、物品或者设备所固有的要素。
尽管已经示出和描述了本发明的实施例,对于本领域的普通技术人员而言,可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型,本发明的范围由所附权利要求及其等同物限定。
Claims (4)
1.一种notch抛光垫的新型配方,其特征在于:其配比方法包括以下步骤:
S1、首先将聚醚多元醇、扩链剂和异氰酸酯按照组分的重量份比称取各相应比例的组分,并放置到相应的储存器皿内部进行备用,使用抛光机进行抛光处理,并在抛光前检查设备状态,保证无异常后进行工艺调节,可根据不同的来料类型,设定不同的加工工艺;
S2、然后通过将抛光片进行放置固定到抛光机NOTCH工位上,并且配合采用专用抛光布组成,通过抛光布高速旋转加压于硅片的边缘,使得硅片以接触点为圆心做上下旋转运动;
S3、最后在抛光处理过程中可使用高溃度榼脂,使Pad内部橘造更均一化及高密度化对耐摩耗性进行特殊化处理,使pad的寿命提高,使用高modulus褂脂和架桥剂,使pad高硬度化有效抑制对wafer表面的Over Polish进行反应处理。
2.一种notch抛光垫的新型配方,其特征在于:其一种notch抛光垫的新型配方的实验辅料组成为:
材质:聚氨酯(PU)
聚醚多元醇(POP);30%;
扩链剂(BDO);10%;
异氰酸酯(MDI);60%。
3.根据权利要求1所述的一种notch抛光垫的新型配方,其特征在于:所述抛光机设备采用的是晶盛6DZ单抛机系列,且抛光加工处理采用的抛光布数量为2片。
4.根据权利要求1所述的一种notch抛光垫的新型配方,其特征在于:所述抛光过程中使用高modulus褂脂和架桥剂处理反应产生架桥反応,且架桥反応呈黄白色。
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Citations (4)
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WO2004059715A1 (en) * | 2002-12-28 | 2004-07-15 | Skc Co., Ltd. | Polishing pads, conditioner and methods for polishing using the same |
US20120309270A1 (en) * | 2010-02-25 | 2012-12-06 | Toyo Tire & Rubber Co., Ltd. | Polishing pad |
CN111909353A (zh) * | 2020-06-30 | 2020-11-10 | 山东一诺威聚氨酯股份有限公司 | 低粘度聚氨酯制备抛光垫的方法 |
CN113226642A (zh) * | 2018-12-27 | 2021-08-06 | 株式会社可乐丽 | 抛光垫 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2004059715A1 (en) * | 2002-12-28 | 2004-07-15 | Skc Co., Ltd. | Polishing pads, conditioner and methods for polishing using the same |
US20120309270A1 (en) * | 2010-02-25 | 2012-12-06 | Toyo Tire & Rubber Co., Ltd. | Polishing pad |
CN113226642A (zh) * | 2018-12-27 | 2021-08-06 | 株式会社可乐丽 | 抛光垫 |
CN111909353A (zh) * | 2020-06-30 | 2020-11-10 | 山东一诺威聚氨酯股份有限公司 | 低粘度聚氨酯制备抛光垫的方法 |
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