CN115528154A - Flip-chip light emitting diode and light emitting device - Google Patents
Flip-chip light emitting diode and light emitting device Download PDFInfo
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- CN115528154A CN115528154A CN202211266073.6A CN202211266073A CN115528154A CN 115528154 A CN115528154 A CN 115528154A CN 202211266073 A CN202211266073 A CN 202211266073A CN 115528154 A CN115528154 A CN 115528154A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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Abstract
The application discloses a flip-chip light emitting diode and a light emitting device, wherein the flip-chip light emitting diode comprises a substrate and a semiconductor light emitting unit positioned on the substrate; the semiconductor island structure is positioned on the substrate, and a gap is formed between the semiconductor island structure and the semiconductor light-emitting unit; when the flip-chip light emitting diode is in a power-on state, the semiconductor island structure does not emit light. The semiconductor light emitting diode is provided with a semiconductor island structure, a gap exists between the semiconductor island structure and a semiconductor light emitting unit, and the semiconductor island structure is not used for conducting and emitting light of a flip light emitting diode; the region of the semiconductor island structure is used as the action region of the thimble, and when the thimble acts on the region, the thimble can be prevented from puncturing or bursting the protective layer at the semiconductor light-emitting unit, so that the phenomenon of leakage failure of the flip-chip light-emitting diode is avoided, and the reliability of the flip-chip light-emitting diode is improved.
Description
Technical Field
The present application relates to the field of semiconductor technology, and more particularly, to a flip chip light emitting diode and a light emitting device.
Background
The flip-chip light emitting diode has the characteristics of high light emitting efficiency, energy conservation, environmental protection and long service life, and is widely applied to various fields such as illumination and backlight. When the conventional flip-chip light emitting diode is packaged, an ejector pin is required to act on a certain area of the front face of the flip-chip light emitting diode so as to jack the flip-chip light emitting diode and perform die bonding, and the acting area of the ejector pin is often the central area of the front face of the flip-chip light emitting diode. The front surface of the flip-chip light emitting diode comprises an epitaxial structure, a transparent conducting layer, an electrode, and a protective layer and a bonding pad for protecting the epitaxial structure, the transparent conducting layer and the electrode, wherein the protective layer is usually made of a silicon oxide material or a distributed Bragg reflector formed by combining silicon oxide and titanium oxide. Due to the brittleness of the protective layer, when the thimble acts on the front surface of the flip-chip light-emitting diode, the thimble is easy to puncture or break the protective layer to expose the epitaxial structure, the transparent conductive layer or the electrode below, so that the flip-chip light-emitting diode is easy to have the leakage failure phenomenon and the reliability of the flip-chip light-emitting diode is influenced.
Disclosure of Invention
An object of the present application is to provide a flip-chip light emitting diode, which is provided with a semiconductor island structure spaced apart from a semiconductor light emitting unit, wherein the region of the semiconductor island structure serves as an action region of a thimble, so as to prevent the thimble from piercing or bursting a protective layer at the semiconductor light emitting unit, prevent the flip-chip light emitting diode from a leakage failure phenomenon, and improve the reliability of the flip-chip light emitting diode.
Another object is to provide a light emitting device, which includes the above flip-chip light emitting diode.
In a first aspect, the present application provides a flip chip light emitting diode comprising:
a substrate;
at least one semiconductor light emitting unit on the substrate;
the semiconductor island structure is positioned on the substrate, and a gap is formed between the semiconductor island structure and the semiconductor light-emitting unit; when the flip-chip light emitting diode is in a power-on state, the semiconductor island structure does not emit light.
In one possible embodiment, the semiconductor island structure is located in a central region of the flip-chip light emitting diode.
In one possible embodiment, the width of the upper surface of the semiconductor island structure is at least 30 μm.
In one possible embodiment, the upper surface shape of the semiconductor island structure is circular or polygonal.
In one possible embodiment, the height of the semiconductor island structure is less than or equal to the height of the semiconductor light emitting unit.
In one possible embodiment, the flip-chip light emitting diode further comprises a metal block, and the metal block is positioned above the semiconductor island structure.
In one possible implementation, the metal block is in direct contact with the upper surface of the semiconductor island structure.
In one possible embodiment, the metal block has a thickness of 0.5 to 10 μm.
In one possible embodiment, the flip-chip light emitting diode further comprises a protective layer covering at least the upper surface and the sidewalls of the semiconductor island structure.
In one possible embodiment, the protective layer is located between the metal block and the semiconductor island structure, or alternatively, the protective layer is located above the metal block.
In one possible embodiment, the flip-chip light emitting diode further comprises a first pad and a second pad;
the region covered by the protective layer further comprises the upper surface and the side wall of the semiconductor light-emitting unit; the semiconductor light emitting unit includes a first semiconductor layer, an active layer and a second semiconductor layer;
the first bonding pad is positioned on the protective layer and electrically connected with the first semiconductor layer in the semiconductor light-emitting unit through the protective layer, and the second bonding pad is positioned on the protective layer and electrically connected with the second semiconductor layer in the semiconductor light-emitting unit through the protective layer.
In one possible embodiment, neither the first pad nor the second pad is above the metal block.
In one possible embodiment, the number of semiconductor light-emitting units is 1.
In one possible implementation, the semiconductor light emitting unit surrounds the periphery of the semiconductor island structure.
In one possible embodiment, the number of the semiconductor light emitting units is plural, and the plural semiconductor light emitting units are arranged at intervals; the number of the semiconductor light emitting units is odd number or even number.
In one possible embodiment, the semiconductor island structure is located between adjacent semiconductor light emitting cells.
In one possible embodiment, a semiconductor island structure is located between adjacent semiconductor light emitting cells at a central region of the flip-chip light emitting diode.
In one possible embodiment, the adjacent semiconductor light emitting units are electrically connected.
In one possible implementation, the width of the gap between the semiconductor island structure and the semiconductor light emitting unit increases from bottom to top.
In a second aspect, the present application provides a light emitting device comprising the flip chip light emitting diode described above.
Compared with the prior art, the application has at least the following beneficial effects:
forming a semiconductor island structure at a central region of the flip-chip light emitting diode, wherein a gap exists between the semiconductor island structure and the semiconductor light emitting unit, and the semiconductor island structure is not used for conducting light emission of the flip-chip light emitting diode; the region where the semiconductor island structure is located serves as an action region of the thimble, when the thimble acts on the region, the crack which is punctured or punctured by the thimble and penetrates through the protective layer only extends to the periphery of the upper surface or the side wall of the semiconductor island structure, and the crack can be prevented from being directly transmitted to the protective layer at the semiconductor light-emitting unit to a certain extent, so that the electric leakage failure phenomenon of the inverted light-emitting diode caused by the fact that the protective layer at the semiconductor light-emitting unit is punctured or punctured is avoided, and the reliability of the inverted light-emitting diode is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.
Fig. 1 is a top view of a flip-chip led according to an embodiment of the present disclosure;
FIG. 2 isbase:Sub>A schematic cross-sectional view A-A of FIG. 1, according to an embodiment of the present application;
FIG. 3 isbase:Sub>A schematic cross-sectional view A-A of FIG. 1, according to an embodiment of the present application;
FIG. 4 isbase:Sub>A schematic cross-sectional view A-A of FIG. 1, according to an embodiment of the present application;
FIG. 5 is a top view of a flip chip LED according to an embodiment of the present application;
FIG. 6 isbase:Sub>A schematic cross-sectional view A-A of FIG. 5 according to an embodiment of the present application;
FIG. 7 isbase:Sub>A schematic cross-sectional view A-A of FIG. 5, according to an embodiment of the present application;
FIG. 8 isbase:Sub>A schematic cross-sectional view A-A of FIG. 5, according to an embodiment of the present application;
FIG. 9 is a schematic cross-sectional view B-B of FIG. 5, according to an embodiment of the present application;
fig. 10 to 12 are schematic sectional viewsbase:Sub>A-base:Sub>A ofbase:Sub>A flip-chip light emitting diode at different stages of manufacturing according to embodiments of the present disclosure.
Illustration of the drawings:
100 a substrate; 200 semiconductor stacked layers; 201 a first semiconductor layer; 202 an active layer; 203 a second semiconductor layer; 210 a semiconductor light emitting unit; 220 a semiconductor island structure; 230 grooves; 240 an isolation trench; 300 a current blocking layer; 400 transparent conductive layers; 500 a first electrode; 510 a second electrode; 520 interconnecting the electrodes; 600 a protective layer; 700 a first pad; 710 a second pad; 800 metal blocks.
Detailed Description
The following description of the embodiments of the present application is provided by way of specific examples, and other advantages and effects of the present application will be readily apparent to those skilled in the art from the disclosure herein. The present application is capable of other and different embodiments, and its several details are capable of modifications and various changes in form and details can be made without departing from the spirit and scope of the present application.
In the description of the present application, it should be noted that the terms "upper", "lower", "left" and "right" and the like indicate orientations or positional relationships based on orientations or positional relationships shown in the drawings or orientations or positional relationships conventionally placed when products of the application are used, and are only used for convenience of description and simplification of the description, but do not indicate or imply that the devices or elements referred to must have specific orientations, be constructed in specific orientations and operations, and thus, should not be construed as limiting the present application. Furthermore, the terms "first" and "second," etc. are used merely to distinguish one description from another, and are not to be construed as indicating or implying relative importance.
According to one aspect of the present application, a flip chip light emitting diode is provided. Referring to fig. 1 to 9, the flip chip light emitting diode includes a substrate 100, a semiconductor light emitting unit 210 formed on the substrate 100, and a semiconductor island structure 220. There is a gap between the semiconductor island structure 220 and the semiconductor light emitting unit 210, and when the flip-chip light emitting diode is in a power-on state, the semiconductor island structure 220 does not emit light. The semiconductor island structure 220 is preferably disposed in a central region of the flip-chip light emitting diode, which refers to the central region of the top view thereof.
The protective layer 600 covers the upper surface and sidewalls of the semiconductor light emitting unit 210, the upper surface and sidewalls of the semiconductor island structure 220, and a gap between the semiconductor island structure 220 and the semiconductor light emitting unit 210.
The front side of the flip-chip light emitting diode is facing the same as the upper surface of the substrate 100, that is, a central region of the front side of the flip-chip light emitting diode is provided with a semiconductor island structure 220, and the semiconductor island structure 220 is independently provided from the semiconductor light emitting unit 210. The region where the semiconductor island structure 220 is located serves as an active region of the thimble, when the thimble acts on the region, a crack that the thimble punctures or punctures the protection layer 600 is generated on the upper surface of the semiconductor island structure 220 or further extends to the periphery of the side wall of the semiconductor island structure 220, and a gap between the semiconductor light emitting unit 210 and the semiconductor island structure 220 can prevent the crack from being transmitted to the protection layer 600 at the semiconductor light emitting unit 210 to a certain extent, so that the leakage failure phenomenon of the flip-chip light emitting diode caused by the puncture or the puncture of the protection layer 600 at the semiconductor light emitting unit 210 is avoided, and the reliability of the flip-chip light emitting diode is improved. In addition, the semiconductor island structure 220 does not emit light when the flip-chip light emitting diode is energized.
The following description will be made by taking a specific implementation structure of the flip-chip light emitting diode as an example:
example 1
The present application providesbase:Sub>A flip-chip light emitting diode, fig. 1 isbase:Sub>A top view of the flip-chip light emitting diode, and fig. 2 to 4 are schematic sectional views ofbase:Sub>A-base:Sub>A in fig. 1.
The flip chip light emitting diode includes a substrate 100, one semiconductor light emitting cell 210 and a semiconductor island structure 220 formed on the substrate 100. The semiconductor island structure 220 is arranged in the central region of the flip-chip light emitting diode, and the semiconductor light emitting unit 210 is annular and surrounds the periphery of the semiconductor island structure 220; the semiconductor island structure 220 and the semiconductor light emitting cell 210 are located on the substrate 100 independently of each other with a gap therebetween, and no semiconductor layer or conductive layer connects the two. The semiconductor island structure 220 does not emit light when the flip-chip light emitting diode is energized. The central region of the flip-chip led is referred to herein as the central region of its top view.
The protective layer 600 covers the upper surface and sidewalls of the semiconductor light emitting unit 210, the upper surface and sidewalls of the semiconductor island structure 220, and a gap between the semiconductor island structure 220 and the semiconductor light emitting unit 210.
The first pad 700 and the second pad 710 are both located on the protective layer 600, and are both electrically connected to the semiconductor light emitting unit 210 through the protective layer 600.
When the flip-chip light emitting diode is mounted on the application substrate, the first and second pads 700 and 710 may be connected to electrodes on the application substrate through a reflow process or a thermal compression process. A connection layer containing a tin component may be present between the first pad 700, the second pad 710 and the electrode on the application substrate, and the tin-containing connection layer may be a tin paste. A tin-containing connection layer may be disposed on the first pad 700 or the second pad 710, thereby avoiding the use of solder paste.
The first and second pads 700 and 710 may include an adhesion layer, a reflection layer, a barrier layer, and a gold layer. Wherein the adhesion layer is a titanium layer or a chromium layer; the reflecting layer is an aluminum layer; the barrier layer is a nickel layer, or a repeated lamination of a nickel layer and a platinum layer. The barrier layer can be used for preventing the tin-containing connecting layer from penetrating into the flip-chip light-emitting diode. Preferably, the first and second pads 700 and 710 further include a thick tin layer on the gold layer.
From the top view of the flip-chip light emitting diode shown in fig. 1, the semiconductor island structure 220 is located between the first pad 700 and the second pad 710. As seen from thebase:Sub>A-base:Sub>A cross-sectional view of the flip-chip light emitting diode shown in fig. 2, neither the first bonding pad 700 nor the second bonding pad 710 is located above the semiconductor island structure 220.
When the ejector pins of the transfer device are applied to the flip-chip leds supported by a flexible material such as blue film to transfer the flip-chip leds away from other devices or substrates, such as application substrates, the ejector pins are applied to the surface above the semiconductor island structure 220 between the first bonding pads 700 and the second bonding pads 710, i.e., the surface of the passivation layer 600. The region where the semiconductor island structure 220 is located serves as an action region of the thimble, when the thimble acts on the region, a crack generated by the thimble penetrating or bursting the protection layer 600 is generated on the upper surface of the semiconductor island structure 220 or further extends to the periphery of the side wall of the semiconductor island structure, and the gap between the semiconductor light emitting unit 210 and the semiconductor island structure 220 can prevent the crack from being transmitted to the protection layer 600 at the semiconductor light emitting unit 210 to a certain extent, so that the leakage failure phenomenon of the flip-chip light emitting diode caused by the penetration or bursting of the protection layer 600 at the semiconductor light emitting unit 210 is avoided, and the reliability of the flip-chip light emitting diode is improved. In addition, the semiconductor island structure 220 does not conduct light when the flip-chip light emitting diode is energized.
Preferably, the width of the gap between the semiconductor island structure 220 and the semiconductor light emitting unit 210W 1 Increasing progressively from bottom to top. Width of the gap at the bottomW 1 Is greater than or equal to 3 mu m.
In one embodiment, the material composition of the stacked material layers of the semiconductor island structure 220 and the thickness of each layer are the same as the semiconductor light emitting unit 210. The thickness of the semiconductor light emitting unit 210 is 3 to 10 μm.
Referring to fig. 2 to 4, the semiconductor light emitting unit 210 includes a first semiconductor stack layer, and the semiconductor island structure 220 includes a second semiconductor stack layer. The height of the semiconductor island structure 220 is equal to or less than the height of the semiconductor light emitting unit 210, and the height of the semiconductor island structure 220 is preferably equal to or less than the height of the first semiconductor stack layer. Each of the first semiconductor stacked layer and the second semiconductor stacked layer includes a first semiconductor layer 201, an active layer 202, and a second semiconductor layer 203; the first semiconductor layer 201 is an N-type semiconductor layer, the active layer 202 is a multi-layer quantum well layer that can provide blue, green, or red radiation, and can also provide ultraviolet or infrared radiation, and the second semiconductor layer 203 is a P-type semiconductor layer. The N-type semiconductor layer, the multi-layer quantum well layer and the P-type semiconductor layer are only basic constituent units of the first semiconductor stacked layer, and on the basis, the first semiconductor stacked layer can further comprise other functional structure layers with an optimization effect on the performance of the flip-chip light-emitting diode.
In order to obtain the semiconductor light emitting unit 210 and the semiconductor island structure 220, the semiconductor stack layer 200 may be obtained on the substrate 100, and then the semiconductor stack layer 200 may be etched from the surface of the semiconductor stack layer 200 to the surface of the substrate 100 through a vertical etching process to form the independent semiconductor light emitting unit 210 and the semiconductor island structure 220. Preferably, a portion of the semiconductor material layer on the semiconductor island structure 220 is further etched, so that the height of the semiconductor island structure 220 is smaller than that of the semiconductor light emitting unit 210.
The shape of the upper surface of the semiconductor island structure 220 includes, but is not limited to, circular or polygonal, and the width of the upper surface of the semiconductor island structure 220 is at least 30 μm, preferably, the width of the upper surface of the semiconductor island structure 220 is implemented according to the current thimble size, and the width of the upper surface of the semiconductor island structure 220 is at least 50 μm. In this embodiment, the upper surface and the lower surface of the semiconductor island structure 220 are both circular, and the diameter of the upper surface of the semiconductor island structure 220 is smaller than the diameter of the lower surface of the semiconductor island structure 220.
In one embodiment, the flip-chip light emitting diode may further include a metal block 800, and the metal block 800 is located above the semiconductor island structure 220. The metal block 800 has a certain ductility, and can buffer the acting force of the thimble to a certain extent. The thickness of the metal block 800 is 0.5 to 10 μm, the thickness of the metal block 800 is preferably 1 to 3 μm, and in this embodiment, the material for manufacturing the metal block 800 includes, but is not limited to, any combination of Au, ti, al, cr, pt, tiW alloy or Ni.
Referring to fig. 3, a metal block 800 is in direct contact with the upper surface of the semiconductor island structure 220, and a protective layer 600 is located above the metal block 800. Specifically, the metal block 800 covers the upper surface of the semiconductor island structure 220, or the metal block 800 covers the upper surface and at least a portion of the sidewalls of the semiconductor island structure 220.
Alternatively, referring to fig. 4, the metal block 800 is located on the upper surface of the protection layer 600 and above the semiconductor island structure 220, that is, the protection layer 600 is located between the metal block 800 and the semiconductor island structure 220. Preferably, the metal block 800 has the same material and thickness as the first pad 700 and the second pad 710, and the metal block 800 is located between the first pad 700 and the second pad 710 and keeps a certain distance from the first pad 700 and the second pad 710. The width of the metal block 800 is less than or equal to the width of the semiconductor island structure 220.
It should be noted that the semiconductor island structure 220 is designed to prevent the protective layer 600 at the semiconductor light emitting unit 210 from being broken to some extent, and the metal block 800 is not necessarily provided.
In one embodiment, the substrate 100 is a transparent substrate, for example, a sapphire substrate. The upper surface of the substrate 100 may be provided with a sapphire pattern, or the upper surface of the substrate 100 may be provided with a pattern of a heterogeneous material, such as silicon oxide. The height of the pattern may be 1 to 3 μm, and the width may be 1 to 4. The substrate 100 further includes an upper surface, a lower surface, and a side surface, and light radiated from the active layer 202 may radiate light from the side surface and the upper surface of the substrate 100. The thickness of the substrate 100 is preferably 60 μm or more, for example, 80 μm, 120 μm, 150 μm, or 250 μm.
In one embodiment, referring to fig. 1 to 4, the first semiconductor stack layer has a mesa exposing a portion of the first semiconductor layer 201, and the first electrode 500 is formed on the mesa.
The semiconductor light emitting unit 210 further includes a transparent conductive layer 400, including but not limited to an ito layer, on the second semiconductor layer 203. The transparent conductive layer 400 includes an opening, and the opening exposes a portion of the second semiconductor layer 203. The second electrode 510 is formed on the transparent conductive layer 400 and contacts the second semiconductor layer 203 through the opening.
The second electrode 510 includes a block portion and at least one strip portion extending from the block portion, and a portion of the second electrode 510 including the block portion or the strip portion contacts the second semiconductor layer 203 through the opening in the transparent conductive layer 400 to improve adhesion of the second electrode 510.
The width of the opening located under the strip portion in the second electrode 510 is greater than the width of the strip portion in the second electrode 510. The width of the opening under the block portion in the second electrode 510 is smaller than the width of the block portion in the second electrode 510 to achieve that the edge of the block portion is positioned on the upper surface of the transparent conductive layer 400.
The first electrode 500 and the second electrode 510 may include an adhesion layer, a reflective layer and a barrier layer, wherein the adhesion layer is a chromium layer or a titanium layer, the reflective layer is an aluminum layer, and the barrier layer is a repeated lamination of a titanium layer and a platinum layer.
The passivation layer 600 is provided with through holes respectively located above the first electrode 500 and the second electrode 510, and the first pad 700 and the second pad 710 are located on the passivation layer 600 and connected to the first electrode 500 and the second electrode 510 through the through holes respectively. Neither the first pad 700 nor the second pad 710 is above the metal block 800.
The protection layer 600 includes, but is not limited to, a distributed bragg reflector or a single-layer insulating layer, and in this embodiment, the material of the protection layer 600 is SiO 2 、TiO 2 、ZnO 2 、ZrO 2 、Cu 2 O 3 And at least two of the different materials, in particular, a distributed bragg reflector made by alternately laminating two materials in a multilayer using a technique such as electron beam evaporation or ion beam sputtering.
Example 2
The application provides a flip-chip light emitting diode, in particular to a high-voltage flip-chip light emitting diode. Fig. 5 isbase:Sub>A top view of the flip-chip light emitting diode, fig. 6 to 8 are schematic sectional viewsbase:Sub>A-base:Sub>A of fig. 5, and fig. 9 isbase:Sub>A schematic sectional view B-B of fig. 5.
The flip chip light emitting diode includes a substrate 100, a plurality of semiconductor light emitting cells 210 formed on the substrate 100, and a semiconductor island structure 220. The plurality of semiconductor light emitting units 210 are arranged in a predetermined direction and spaced apart from each other, and adjacent semiconductor light emitting units 210 are electrically connected to each other. The semiconductor island structure 220 is located between adjacent semiconductor light emitting cells 210 at a central region of the flip-chip light emitting diode, which is referred to herein as a central region of a top view thereof, and has a gap with the adjacent semiconductor light emitting cells 210. The number of the semiconductor light emitting units 210 is an odd number or an even number, and the number of the semiconductor light emitting units 210 is preferably an even number.
The protective layer 600 covers the upper surface and sidewalls of each semiconductor light emitting cell 210, the upper surface and sidewalls of the semiconductor island structure 220, and a gap between the semiconductor island structure 220 and the semiconductor light emitting cell 210.
The first bonding pad 700 is disposed on the protection layer 600 and electrically connected to the leading semiconductor light emitting unit 210 through the protection layer 600, and the second bonding pad 710 is disposed on the protection layer 600 and electrically connected to the trailing semiconductor light emitting unit 210 through the protection layer 600.
Preferably, the width of the gap between the semiconductor island structure 220 and the semiconductor light emitting cell 210 adjacent theretoW 1 Increasing progressively from bottom to top. Width of the gap at the bottomW 1 Is greater than or equal to 3 mu m.
In one embodiment, the material composition of the stacked material layers of the semiconductor island structure 220 and the thickness of each layer are the same as the semiconductor light emitting unit 210. The thickness of the semiconductor light emitting unit 210 is 3 to 10 μm.
Referring to fig. 6 to 8, each of the semiconductor light emitting cells 210 includes a first semiconductor stack layer, and the semiconductor island structure 220 includes a second semiconductor stack layer. The height of the semiconductor island structure 220 is equal to or less than the height of the semiconductor light emitting unit 210, and the height of the semiconductor island structure 220 is preferably equal to or less than the height of the first semiconductor stack layer. Each of the first semiconductor stacked layer and the second semiconductor stacked layer includes a first semiconductor layer 201, an active layer 202, and a second semiconductor layer 203; the first semiconductor layer 201 is an N-type semiconductor layer, the active layer 202 is a multi-layer quantum well layer that can provide blue, green, or red radiation, and can also provide ultraviolet or infrared radiation, and the second semiconductor layer 203 is a P-type semiconductor layer. The N-type semiconductor layer, the multi-layer quantum well layer and the P-type semiconductor layer are only basic constituent units of the first semiconductor stacked layer, and on the basis, the first semiconductor stacked layer can further comprise other functional structure layers with optimized functions on the performance of the flip-chip light-emitting diode.
In order to obtain a plurality of semiconductor light emitting cells 210 and semiconductor island structures 220, the semiconductor stack layer 200 may be obtained on the substrate 100, and then the semiconductor stack layer 200 may be etched from the surface of the semiconductor stack layer 200 to the surface of the substrate 100 through a vertical etching process to form a plurality of semiconductor light emitting cells 210 and semiconductor island structures 220. Preferably, a portion of the semiconductor material layer on the semiconductor island structure 220 is further etched, so that the height of the semiconductor island structure 220 is smaller than the height of the semiconductor light emitting unit 210.
The shape of the upper surface of the semiconductor island structure 220 includes, but is not limited to, a circle or a polygon, and the width of the upper surface of the semiconductor island structure 220 is at least 30 μm, preferably, the width of the upper surface of the semiconductor island structure 220 is implemented according to the current thimble size, and the width of the upper surface of the semiconductor island structure 220 is at least 50 μm. In this embodiment, the upper surface and the lower surface of the semiconductor island structure 220 are both circular, and the diameter of the upper surface of the semiconductor island structure 220 is smaller than the diameter of the lower surface of the semiconductor island structure 220.
In one embodiment, the flip-chip light emitting diode may further include a metal block 800, and the metal block 800 is located above the semiconductor island structure 220. Metal block 800 has certain ductility, can cushion the effort of thimble to a certain extent. The thickness of the metal block 800 is 0.5 to 10 μm, the thickness of the metal block 800 is preferably 1 to 3 μm, and in this embodiment, the material for manufacturing the metal block 800 includes, but is not limited to, any combination of Au, ti, al, cr, pt, tiW alloy or Ni.
Referring to fig. 7, a metal block 800 is directly in contact with an upper surface of the semiconductor island structure 220, and a protective layer 600 is located above the metal block 800. Specifically, the metal block 800 covers the upper surface of the semiconductor island structure 220, or the metal block 800 covers the upper surface and at least a portion of the sidewalls of the semiconductor island structure 220.
Alternatively, referring to fig. 8, the metal block 800 is located on the upper surface of the protection layer 600 and above the semiconductor island structure 220, that is, the protection layer 600 is located between the metal block 800 and the semiconductor island structure 220. Preferably, the metal block 800 has the same material and thickness as the first pad 700 and the second pad 710, and the metal block 800 is located between the first pad 700 and the second pad 710 and keeps a certain distance from the first pad 700 and the second pad 710. The width of the metal block 800 is less than or equal to the width of the semiconductor island structure 220.
It should be noted that the semiconductor island structure 220 is designed to prevent the protective layer 600 at the semiconductor light emitting unit 210 from being broken to some extent, and the metal block 800 is not necessarily provided.
In one embodiment, referring to fig. 9, the flip-chip light emitting diode further includes a current blocking layer 300, and in each adjacent two semiconductor light emitting cells 210, the current blocking layer 300 extends from the second semiconductor layer 203 in the left semiconductor light emitting cell 210 to the first semiconductor layer 201 in the right semiconductor light emitting cell 210. The material of the current blocking layer 300 may be selected from one or more of silicon oxide, silicon nitride, silicon carbide, or silicon oxynitride.
The first electrode 500 is disposed on the first semiconductor light emitting unit 210, and the first electrode 500 is electrically connected to the first semiconductor layer 201 in the first semiconductor light emitting unit 210.
The semiconductor light emitting unit 210 of the tail end is provided with a second electrode 510. In the semiconductor light emitting unit 210 at the tail end, a transparent conductive layer 400 is formed on the second semiconductor layer 203, and the transparent conductive layer 400 includes, but is not limited to, an ito layer. The transparent conductive layer 400 includes an opening exposing a portion of the second semiconductor layer 203, and the second electrode 510 contacts the second semiconductor layer 203 through the opening.
The second electrode 510 includes a block portion and at least one strip portion extending from the block portion, and the second electrode 510 includes a portion of the block or a portion of the strip in contact with the second semiconductor layer 203 through the opening in the transparent conductive layer 400 to improve adhesion of the second electrode 510.
The width of the opening located under the stripe portion in the second electrode 510 is greater than the width of the stripe portion in the second electrode 510. The width of the opening under the block portion in the second electrode 510 is smaller than the width of the block portion in the second electrode 510 to achieve that the edge of the block portion is positioned on the upper surface of the transparent conductive layer 400.
The two adjacent semiconductor light emitting units 210 are electrically connected through an interconnection electrode 520, specifically, in each two adjacent semiconductor light emitting units 210, the left semiconductor light emitting unit 210 includes the transparent conductive layer 400, the transparent conductive layer 400 is located on the current blocking layer 300 above the second semiconductor layer 203, and the interconnection electrode 520 extends from the transparent conductive layer 400 in the left semiconductor light emitting unit 210 to the first semiconductor layer 201 in the right semiconductor light emitting unit 210.
The first electrode 500, the second electrode 510, and the interconnection electrode 520 may include an adhesion layer, a reflective layer, and a barrier layer, wherein the adhesion layer is a chromium layer or a titanium layer, the reflective layer is an aluminum layer, and the barrier layer is a repeated stack of a titanium layer and a platinum layer.
The passivation layer 600 is provided with through holes respectively located above the first electrode 500 and the second electrode 510, and the first pad 700 and the second pad 710 are located on the passivation layer 600 and connected to the first electrode 500 and the second electrode 510 through the through holes respectively.
The protection layer 600 includes, but is not limited to, a distributed bragg reflector or a single-layer insulating layer, and in this embodiment, the material of the protection layer 600 is SiO 2 、TiO 2 、ZnO 2 、ZrO 2 、Cu 2 O 3 And at least two of the different materials, in particular, a distributed bragg reflector made by alternately laminating two materials in a multilayer using a technique such as electron beam evaporation or ion beam sputtering.
Example 3
The application provides a preparation method of a flip light-emitting diode, and particularly provides a preparation method of the flip light-emitting diode shown in figure 1. The preparation method comprises the following steps:
s1, referring to fig. 10, a substrate 100 is provided, and a semiconductor stack layer 200 is formed on the substrate 100.
The semiconductor stacked layer 200 includes a first semiconductor layer 201, an active layer 202, and a second semiconductor layer 203; the first semiconductor layer 201 is an N-type semiconductor layer, the active layer 202 is a multi-layer quantum well layer, and the second semiconductor layer 203 is a P-type semiconductor layer. In this embodiment, the substrate 100 is a sapphire patterned substrate or a sapphire flat-bottom substrate.
S2, referring to fig. 11, the semiconductor stack layer 200 is etched and a trench 230 penetrating through the semiconductor stack layer 200 is formed, the trench 230 is ring-shaped and divides the semiconductor stack layer 200 into an independent semiconductor light emitting unit 210 and a semiconductor island structure 220, and the semiconductor light emitting unit 210 surrounds the periphery of the semiconductor island structure 220.
The width of the trench 230 is the width of the gap between the semiconductor island structure 220 and the semiconductor light emitting cell 210W 1 ，W 1 Increasing progressively from bottom to top.
The upper surface of semiconductor island structure 220 is circular or polygonal in shape, and the width of the upper surface of semiconductor island structure 220 is at least 30 μm, preferably, the width of the upper surface of semiconductor island structure 220 is implemented according to the current thimble size, and the width of the upper surface of semiconductor island structure 220 is at least 50 μm. In this embodiment, the upper surface and the lower surface of the semiconductor island structure 220 are both circular, and the diameter of the upper surface of the semiconductor island structure 220 is smaller than the diameter of the lower surface of the semiconductor island structure 220.
S3, referring to fig. 12, a protection layer 600 is formed at the semiconductor light emitting unit 210, the semiconductor island structure 220 and the trench 230, wherein the protection layer 600 includes, but is not limited to, a distributed bragg reflector or a single-layer insulating layer.
Specifically, the semiconductor light emitting unit 210 includes a first semiconductor stack layer on which a transparent conductive layer 400 is formed, the transparent conductive layer 400 includes an opening, and the opening exposes a portion of the second semiconductor layer 203. The material of the transparent conductive layer 400 is generally selected to be a conductive material having a transparent property, and may be specifically selected to be indium tin oxide.
The first semiconductor stack layer has a mesa exposing a portion of the first semiconductor layer 201, and the first electrode 500 is formed on the mesa; a second electrode 510 is formed on the transparent conductive layer 400, and the second electrode 510 contacts the second semiconductor layer 203 through the opening.
The second electrode 510 includes a block portion and at least one strip portion extending from the block portion, and a portion of the second electrode 510 including the block portion or the strip portion contacts the second semiconductor layer 203 through the opening in the transparent conductive layer 400 to improve adhesion of the second electrode 510.
The width of the opening located under the stripe portion in the second electrode 510 is greater than the width of the stripe portion in the second electrode 510. The width of the opening under the block portion in the second electrode 510 is smaller than the width of the block portion in the second electrode 510 to achieve that the edge of the block portion is positioned on the upper surface of the transparent conductive layer 400.
The protective layer 600 is etched and through holes are formed over the first electrode 500 and the second electrode 510, respectively, for forming a first pad 700 corresponding to the first electrode 500 and a second pad 710 corresponding to the second electrode 510.
S4, forming a first pad 700 and a second pad 710 electrically connected to the semiconductor light emitting unit 210. This step results in the flip-chip led shown in fig. 2.
In one embodiment, further comprising: forming a metal block 800 on the semiconductor island structure 220 while forming the first electrode 500 and the second electrode 510; the metal block 800 covers the upper surface of the semiconductor island structure 220, or the metal block 800 covers the upper surface and at least a portion of the sidewalls of the semiconductor island structure 220. The thickness of the metal block 800 is 0.5 to 10 μm, and the thickness of the metal block 800 is preferably 1 to 3 μm, in this embodiment, the material for preparing the metal block 800 may be the same as the first electrode 500 and the second electrode 510. This step results in the flip-chip led shown in fig. 3.
In one embodiment, further comprising: the metal bump 800 is formed on a region above the semiconductor island structure 220 in the upper surface of the protection layer 600 at the same time as the first pad 700 and the second pad 710 are formed. The thickness of the metal block 800 is 0.5 to 10 μm, the thickness of the metal block 800 is preferably 1 to 3 μm, and in this embodiment, the material for preparing the metal block 800 may be the same as the first pad 700 and the second pad 710. This step results in the flip-chip led shown in fig. 4.
Example 4
The application provides a preparation method of a flip-chip diode, and particularly provides a preparation method of a flip-chip light-emitting diode shown in fig. 5. The preparation method comprises the following steps:
s10, providing a substrate 100, forming a plurality of semiconductor light-emitting units 210 which are arranged in a preset direction and are arranged at intervals on the substrate 100, and electrically connecting adjacent semiconductor light-emitting units 210; a semiconductor island structure 220 is formed between adjacent semiconductor light emitting cells 210 at the central region of the flip chip light emitting diode, and a gap exists between the semiconductor island structure 220 and the semiconductor light emitting cell 210 adjacent thereto. The number of the semiconductor light emitting units 210 is an odd number or an even number, and the number of the semiconductor light emitting units 210 is preferably an even number. The semiconductor island structure 220 is located in the central region of the flip-chip light emitting diode so as to achieve the area of the light emitting region of each semiconductor light emitting unit 210 as close as possible.
Specifically, a semiconductor stack layer 200 is formed on a substrate 100, the semiconductor stack layer 200 including a first semiconductor layer 201, an active layer 202, and a second semiconductor layer 203; the first semiconductor layer 201 is an N-type semiconductor layer, the active layer 202 is a multi-layer quantum well layer, and the second semiconductor layer 203 is a P-type semiconductor layer. The semiconductor stack layer 200 is etched and a plurality of first semiconductor stack layers for forming the semiconductor light emitting unit 210 are formed, adjacent first semiconductor stack layers are spaced apart by an isolation groove 240, and the semiconductor island structure 220 is formed in the isolation groove 240 in the central region of the substrate 100.
The width of the gap between the semiconductor island structure 220 and the semiconductor light emitting cell 210 adjacent theretoW 1 And the number of the holes is increased from bottom to top. The upper surface of semiconductor island structure 220 is circular or polygonal in shape, and the width of the upper surface of semiconductor island structure 220 is at least 30 μm, preferably, the width of the upper surface of semiconductor island structure 220 is implemented according to the current thimble size, and the width of the upper surface of semiconductor island structure 220 is at least 50 μm. In this embodiment, the upper surface and the lower surface of the semiconductor island structure 220 are both circular, and the diameter of the upper surface of the semiconductor island structure 220 is smaller than the diameter of the lower surface of the semiconductor island structure 220.
In each adjacent two of the semiconductor light emitting cells 210, the current blocking layer 300 extends from the left second semiconductor layer 203 to the right first semiconductor layer 201 through the isolation trench 240. The material of the current blocking layer 300 may be selected from one or more of silicon oxide, silicon nitride, silicon carbide, or silicon oxynitride.
In the semiconductor light emitting unit 210 at the tail end, a transparent conductive layer 400 is formed on the second semiconductor layer 203, and a material thereof is generally selected to be a conductive material having a transparent property, and may be specifically selected to be indium tin oxide. In each adjacent two semiconductor light emitting cells 210, the left semiconductor light emitting cell 210 also includes the transparent conductive layer 400, and the transparent conductive layer 400 is located on the current blocking layer 300 above the second semiconductor layer 203.
A first electrode 500 is formed on the first semiconductor layer 201 in the first semiconductor light emitting unit 210.
A second electrode 510 is formed on the transparent conductive layer 400 in the semiconductor light emitting unit 210 at the tail end, and the second electrode 510 contacts the second semiconductor layer 203 through the opening.
The second electrode 510 includes a block portion and at least one strip portion extending from the block portion, and a portion of the second electrode 510 including the block portion or the strip portion contacts the second semiconductor layer 203 through the opening in the transparent conductive layer 400 to improve adhesion of the second electrode 510.
The width of the opening located under the strip portion in the second electrode 510 is greater than the width of the strip portion in the second electrode 510. The width of the opening under the block portion in the second electrode 510 is smaller than the width of the block portion in the second electrode 510 to achieve that the edge of the block portion is positioned on the upper surface of the transparent conductive layer 400.
An interconnection electrode 520 for connecting adjacent semiconductor light emitting cells 210 is formed, and in every adjacent two semiconductor light emitting cells 210, the interconnection electrode 520 extends from the transparent conductive layer 400 in the left semiconductor light emitting cell 210 to the first semiconductor layer 201 in the right semiconductor light emitting cell 210.
S20, forming a protection layer 600 at the plurality of semiconductor light emitting units 210, the semiconductor island structures 220 and the isolation trenches 240, wherein the protection layer 600 includes, but is not limited to, a distributed bragg reflector or a single-layer insulating layer.
The protective layer 600 is etched and through holes are formed over the first electrode 500 and the second electrode 510, respectively, for forming a first pad 700 corresponding to the first electrode 500 and a second pad 710 corresponding to the second electrode 510.
S30, a first bonding pad 700 electrically connected to the head-end semiconductor light emitting unit 210 and a second bonding pad 710 electrically connected to the tail-end semiconductor light emitting unit 210 are formed. This step results in the flip-chip led shown in fig. 6.
In one embodiment, further comprising: forming a metal block 800 on the semiconductor island structure 220 while forming the first electrode 500, the second electrode 510, and the interconnection electrode 520; the metal block 800 covers the upper surface of the semiconductor island structure 220, or the metal block 800 covers the upper surface and at least a portion of the sidewalls of the semiconductor island structure 220. The thickness of the metal block 800 is 0.5 to 10 μm, the thickness of the metal block 800 is preferably 1 to 3 μm, and in this embodiment, the material for manufacturing the metal block 800 may be the same as the first electrode 500, the second electrode 510, or the interconnection electrode 520. This step results in the flip-chip led shown in fig. 7.
In one embodiment, further comprising: at the same time as the first and second pads 700 and 710 are formed, the metal blocks 800 are formed on the regions above the semiconductor island structures 220 in the upper surface of the protection layer 600. The thickness of the metal block 800 is 0.5 to 10 μm, the thickness of the metal block 800 is preferably 1 to 3 μm, and in this embodiment, the material for manufacturing the metal block 800 may be the same as the first bonding pad 700 and the second bonding pad 710. This step results in the flip-chip led shown in fig. 4.
According to an aspect of the application, a lighting device is provided, which may be a lighting device, a backlight device, a display device, such as a luminaire, a television, a mobile phone, a panel, or may be an RGB display screen. The light emitting device includes the flip light emitting diode in the above embodiment, and the flip light emitting diode is integrally mounted on the application substrate or the package substrate in a number of hundreds, thousands, or tens of thousands to form a light emitting source portion.
As can be seen from the above technical solutions, the present application forms the semiconductor island structure 220 at the central region of the flip-chip light emitting diode, and a gap exists between the semiconductor island structure 220 and the semiconductor light emitting unit 210, and is not used in the conductive light emitting process of the flip-chip light emitting diode; the region where the semiconductor island structure 220 is located serves as an active region of the thimble, and when the thimble acts on the region, the crack that the thimble punctures or pierces the protection layer 600 only extends to the periphery of the upper surface or the side wall of the semiconductor island structure 220, so that the crack can be prevented from being directly transmitted to the protection layer 600 at the semiconductor light-emitting unit 210 to a certain extent, thereby preventing the occurrence of leakage failure phenomenon of the flip-chip light-emitting diode due to the puncture or the piercing of the protection layer 600 at the semiconductor light-emitting unit 210, and improving the reliability of the flip-chip light-emitting diode.
The foregoing is only a preferred embodiment of the present application, and it should be noted that, for those skilled in the art, several modifications and substitutions can be made without departing from the technical principle of the present application, and these modifications and substitutions should also be regarded as the protection scope of the present application.
Claims (43)
1. A flip chip light emitting diode comprising:
a substrate;
at least one semiconductor light emitting unit on the substrate;
a semiconductor island structure having an upper surface and sidewalls, located on the substrate independently of the semiconductor light emitting cells, the semiconductor island structure not emitting light when the flip-chip light emitting diode is in a powered state, the semiconductor island structure being located in a central region of the flip-chip light emitting diode;
a protective layer covering at least an upper surface and sidewalls of the semiconductor island structures.
2. The flip chip light emitting diode of claim 1, wherein the width of the upper surface of the semiconductor island structure is at least 30 μm.
3. The flip-chip led of claim 1, wherein the semiconductor island structure has an upper surface with a shape of a circle or a polygon.
4. The flip-chip light emitting diode of claim 1, wherein the semiconductor island structure has a height that is less than or equal to a height of the semiconductor light emitting cell.
5. The flip-chip led of claim 1, further comprising a metal block located over the semiconductor island structure.
6. The flip-chip led of claim 5, wherein the metal block is in direct contact with an upper surface of the semiconductor island structure.
7. The flip-chip LED of claim 5, wherein the thickness of the metal block is 0.5 to 10 μm.
8. The flip-chip led of claim 5, wherein the metal bumps are located on the top surface of the protective layer; alternatively, the metal block is disposed on an upper surface of the semiconductor island structure and covered by the protective layer.
9. The flip chip light emitting diode of claim 1, further comprising a first pad and a second pad;
the region covered by the protective layer further comprises the upper surface and the side wall of the semiconductor light-emitting unit; the semiconductor light emitting unit includes a first semiconductor layer, an active layer, and a second semiconductor layer;
the first bonding pad is positioned on the protective layer and electrically connected with the first semiconductor layer in the semiconductor light-emitting unit through the protective layer, and the second bonding pad is positioned on the protective layer and electrically connected with the second semiconductor layer in the semiconductor light-emitting unit through the protective layer; the protective layer is a distributed Bragg reflector or a single-layer insulating layer.
10. The flip-chip light emitting diode of claim 1, wherein neither the first nor the second bonding pads are over the semiconductor island structure.
11. The flip-chip light emitting diode of claim 1, wherein the number of the semiconductor light emitting cells is 1.
12. The flip-chip led of claim 11, wherein the semiconductor light emitting cells surround the periphery of the semiconductor island structure.
13. The flip-chip light emitting diode of claim 1, wherein the number of the semiconductor light emitting cells is plural, and the plural semiconductor light emitting cells are arranged at intervals; the number of the semiconductor light emitting units is odd number or even number.
14. The flip-chip light emitting diode of claim 13, wherein the semiconductor island structures are located between adjacent semiconductor light emitting cells.
15. The flip-chip led of claim 14, wherein adjacent semiconductor light emitting cells are electrically connected.
16. The flip-chip light emitting diode of claim 1, wherein the width of the gap between the semiconductor island structure and the semiconductor light emitting cell increases from bottom to top.
17. A flip chip light emitting diode comprising:
a substrate;
two semiconductor light emitting units on the substrate;
and the semiconductor island structure is provided with an upper surface and a side wall, is positioned on the substrate independently from the two semiconductor light-emitting units, does not emit light when the flip-chip light-emitting diode is in a power-on state, and is positioned between the two semiconductor light-emitting units.
18. The flip-chip led of claim 17, further comprising a protective layer covering at least the top surface and sidewalls of the semiconductor island structures.
19. The flip chip light emitting diode of claim 17, wherein the width of the upper surface of the semiconductor island structure is at least 30 μ ι η.
20. The flip chip light emitting diode of claim 17, wherein the upper surface of the semiconductor island structure is circular or polygonal in shape, and the semiconductor island structure is located at a central region of the flip chip light emitting diode.
21. The flip-chip led of claim 17, wherein the height of the semiconductor island structure is equal to or less than the height of the semiconductor light emitting unit, and the thickness of the semiconductor light emitting unit is 3 to 10 μm.
22. The flip-chip led of claim 17, further comprising a metal block, wherein the metal block is located above the semiconductor island structure, and the thickness of the metal block is 0.5 to 10 μm.
23. The flip-chip led of claim 17, wherein the metal bumps are in direct contact with the upper surface of the semiconductor island structures.
24. The flip-chip led of claim 17, further comprising a protective layer covering at least the top surface and sidewalls of the semiconductor island structures and a metal block on the top surface of the protective layer.
25. The flip-chip led of claim 17, further comprising a protective layer and a metal block disposed on an upper surface of the semiconductor island structure and covered by the protective layer.
26. The flip-chip light emitting diode of claim 17, further comprising a first pad and a second pad;
the region covered by the protective layer further comprises the upper surface and the side wall of the semiconductor light-emitting unit; the semiconductor light emitting unit includes a first semiconductor layer, an active layer, and a second semiconductor layer;
the first pad is located on the protective layer and penetrates through the protective layer to be electrically connected with a first semiconductor layer in the semiconductor light-emitting unit, and the second pad is located on the protective layer and penetrates through the protective layer to be electrically connected with a second semiconductor layer in the semiconductor light-emitting unit.
27. The flip-chip led of claim 27, wherein neither the first nor the second pads are over the semiconductor island structure.
28. The flip-chip light emitting diode of claim 17, wherein the gap between the semiconductor island structure and the semiconductor light emitting cell increases in width from bottom to top, and the diameter of the upper surface of the semiconductor island structure is smaller than the diameter of the lower surface of the semiconductor island structure; the width of the gap between the semiconductor island structure and the semiconductor light emitting unit increases from bottom to top.
29. The flip-chip led of claim 17, wherein the two semiconductor light emitting units have a gap therebetween, the gap simultaneously surrounds the semiconductor island structure, and a width W1 of the gap between the semiconductor island structure and the semiconductor light emitting units at the bottom is greater than or equal to 3 μm.
30. The flip chip light emitting diode of claim 17, further comprising an interconnection electrode connecting the two light emitting cells, the interconnection electrode not being located on the semiconductor structure as viewed from a top view of the flip chip light emitting diode.
31. A flip-chip light emitting diode comprising:
a substrate;
two semiconductor light emitting units on the substrate;
and the semiconductor island structure is provided with an upper surface and a side wall, is independent from the two semiconductor light-emitting units and is positioned on the substrate, does not emit light when the flip-chip light-emitting diode is in a power-on state, and comprises two interconnection electrodes which are respectively positioned at two sides of the semiconductor island structure when viewed from a top view of the flip-chip light-emitting diode.
32. The flip-chip led of claim 32, further comprising a protective layer covering at least the top surface and sidewalls of the semiconductor island structures.
33. The flip-chip light emitting diode of claim 32, wherein the width of the upper surface of the semiconductor island structure is at least 30 μm, or at least 50um.
34. The flip chip light emitting diode of claim 32, wherein the upper surface of the semiconductor island structure is circular or polygonal in shape, and the semiconductor island structure is located at a central region of the flip chip light emitting diode.
35. The flip-chip led of claim 32, wherein the height of the semiconductor island structure is equal to or less than the height of the semiconductor light emitting unit, and the thickness of the semiconductor light emitting unit is 3-10 μm.
36. The flip-chip led of claim 32, further comprising a metal block, wherein the metal block is located above the semiconductor island structure, and the thickness of the metal block is 0.5 to 10 μm.
37. The flip chip light emitting diode of claim 32, wherein the metal block is in direct contact with an upper surface of the semiconductor island structure.
38. The flip-chip led of claim 32, further comprising a protective layer covering at least the top surface and sidewalls of the semiconductor island structures and a metal block on the top surface of the protective layer.
39. The flip-chip light emitting diode of claim 32, further comprising a protective layer and a metal block disposed on an upper surface of the semiconductor island structure and covered by the protective layer.
40. The flip-chip light emitting diode of claim 32, further comprising a first pad and a second pad;
the region covered by the protective layer further comprises the upper surface and the side wall of the semiconductor light-emitting unit; the semiconductor light emitting unit includes a first semiconductor layer, an active layer, and a second semiconductor layer;
the first bonding pad is positioned on the protective layer and penetrates through the protective layer to be electrically connected with a first semiconductor layer in the semiconductor light-emitting unit, the second bonding pad is positioned on the protective layer and penetrates through the protective layer to be electrically connected with a second semiconductor layer in the semiconductor light-emitting unit, and the first bonding pad and the second bonding pad are not positioned above the semiconductor island structure.
41. The flip chip light emitting diode of claim 32, wherein the width of the gap between the semiconductor island structure and the semiconductor light emitting unit increases from bottom to top, the diameter of the upper surface of the semiconductor island structure is smaller than the diameter of the lower surface of the semiconductor island structure, and the width W1 of the gap between the semiconductor island structure and the semiconductor light emitting unit at the bottom is 3 μm or more.
42. The flip-chip led of claim 32, wherein there is a gap between the two semiconductor light emitting units, the gap surrounding the semiconductor island structure.
43. A light emitting device comprising the flip chip light emitting diode as claimed in any one of claims 1 to 43.
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| CN114551673A (en) * | 2022-04-27 | 2022-05-27 | 江西兆驰半导体有限公司 | Light emitting diode chip and preparation method thereof |
| CN115207178B (en) * | 2022-07-14 | 2023-09-29 | 淮安澳洋顺昌光电技术有限公司 | Inverted high-voltage light-emitting diode |
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2021
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| CN113903836B (en) | 2022-11-22 |
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